JPWO2023080014A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2023080014A5
JPWO2023080014A5 JP2023557962A JP2023557962A JPWO2023080014A5 JP WO2023080014 A5 JPWO2023080014 A5 JP WO2023080014A5 JP 2023557962 A JP2023557962 A JP 2023557962A JP 2023557962 A JP2023557962 A JP 2023557962A JP WO2023080014 A5 JPWO2023080014 A5 JP WO2023080014A5
Authority
JP
Japan
Prior art keywords
abrasive
polishing
metal salt
mass
polishing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023557962A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023080014A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/039682 external-priority patent/WO2023080014A1/ja
Publication of JPWO2023080014A1 publication Critical patent/JPWO2023080014A1/ja
Publication of JPWO2023080014A5 publication Critical patent/JPWO2023080014A5/ja
Pending legal-status Critical Current

Links

JP2023557962A 2021-11-04 2022-10-25 Pending JPWO2023080014A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021180049 2021-11-04
PCT/JP2022/039682 WO2023080014A1 (ja) 2021-11-04 2022-10-25 研磨剤、添加液および研磨方法

Publications (2)

Publication Number Publication Date
JPWO2023080014A1 JPWO2023080014A1 (https=) 2023-05-11
JPWO2023080014A5 true JPWO2023080014A5 (https=) 2024-11-11

Family

ID=86240948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023557962A Pending JPWO2023080014A1 (https=) 2021-11-04 2022-10-25

Country Status (3)

Country Link
JP (1) JPWO2023080014A1 (https=)
TW (1) TW202334342A (https=)
WO (1) WO2023080014A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3495143B2 (ja) * 1995-07-04 2004-02-09 富士通株式会社 研磨剤、研磨方法および半導体装置の製造方法
JP2003059868A (ja) * 2001-08-10 2003-02-28 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
WO2018179062A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット、添加液及び研磨方法
JP7493367B2 (ja) * 2020-03-27 2024-05-31 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

Similar Documents

Publication Publication Date Title
TWI828668B (zh) 研磨用組合物及使用此的研磨方法
JP4237439B2 (ja) 基体の研磨又は平坦化方法
TWI299747B (en) Chemical-mechanical polishing composition and method for using the same
JP2012511251A5 (https=)
TW200513520A (en) Method for manufacturing substrate
JP2000336344A (ja) 研磨剤
TW201116614A (en) Abrasive agent, condensed one-liquid type abrasive agent, two-liquid type abrasive agent and polishing method of substrate
TW527408B (en) Method for polishing a memory or rigid disk with an amino acid-containing composition
US6524168B2 (en) Composition and method for polishing semiconductors
JP2004500708A5 (https=)
JP2011139030A (ja) ケミカルメカニカル研磨組成物及びそれに関連する方法
JP2006231436A (ja) 研磨用スラリーおよび研磨方法
WO2012005142A1 (ja) 研磨剤および研磨方法
CN102051128B (zh) 一种化学机械抛光液
TW201504417A (zh) 用於鎳-磷記憶碟之拋光組合物
JP2000265161A (ja) Ｃｍｐ用スラリおよびｃｍｐ法
CN1107097C (zh) 化学机械研磨组合物及方法
WO2001080296A1 (fr) Compose de polissage pour le polissage de dispositif a semiconducteur et procede de fabrication de dispositif a semiconducteur dans lesquel ledit compose est utilise
JP2010501121A (ja) 固定磨き剤ｃｍｐのための選択性化学薬剤
CN100468646C (zh) 化学机械研磨方法
JPWO2023080014A5 (https=)
JP2014216368A (ja) 研磨剤および研磨方法
KR102410159B1 (ko) 반도체 기판의 연마 방법
WO2008040158A1 (fr) Liquide de polissage chimico-mécanique destiné à polir du polysilicium
JP2009238818A (ja) 研磨方法および研磨用組成物