TW202334342A - 研磨劑、添加液及研磨方法 - Google Patents

研磨劑、添加液及研磨方法 Download PDF

Info

Publication number
TW202334342A
TW202334342A TW111140826A TW111140826A TW202334342A TW 202334342 A TW202334342 A TW 202334342A TW 111140826 A TW111140826 A TW 111140826A TW 111140826 A TW111140826 A TW 111140826A TW 202334342 A TW202334342 A TW 202334342A
Authority
TW
Taiwan
Prior art keywords
polishing
abrasive
metal salt
metal
polished
Prior art date
Application number
TW111140826A
Other languages
English (en)
Chinese (zh)
Inventor
渋谷友洋
岡村有造
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202334342A publication Critical patent/TW202334342A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW111140826A 2021-11-04 2022-10-27 研磨劑、添加液及研磨方法 TW202334342A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-180049 2021-11-04
JP2021180049 2021-11-04

Publications (1)

Publication Number Publication Date
TW202334342A true TW202334342A (zh) 2023-09-01

Family

ID=86240948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111140826A TW202334342A (zh) 2021-11-04 2022-10-27 研磨劑、添加液及研磨方法

Country Status (3)

Country Link
JP (1) JPWO2023080014A1 (https=)
TW (1) TW202334342A (https=)
WO (1) WO2023080014A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3495143B2 (ja) * 1995-07-04 2004-02-09 富士通株式会社 研磨剤、研磨方法および半導体装置の製造方法
JP2003059868A (ja) * 2001-08-10 2003-02-28 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
WO2018179062A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット、添加液及び研磨方法
JP7493367B2 (ja) * 2020-03-27 2024-05-31 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

Also Published As

Publication number Publication date
JPWO2023080014A1 (https=) 2023-05-11
WO2023080014A1 (ja) 2023-05-11

Similar Documents

Publication Publication Date Title
CN100369211C (zh) 半导体用研磨剂、该研磨剂的制造方法和研磨方法
US9828528B2 (en) Polishing composition containing ceria abrasive
KR101389151B1 (ko) Ｃｍｐ용 연마액 및 이를 이용한 연마 방법
EP3265526B1 (en) Polishing composition containing ceria particles and method of use
JP5157908B2 (ja) 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
US20080086950A1 (en) Semiconductor polishing compound
TWI798345B (zh) 研磨用組成物
TW201632605A (zh) Cmp研磨液、基板的研磨方法及電子零件
TW202244243A (zh) 研磨劑及研磨方法、與研磨用添加液
WO2010052990A1 (ja) 研磨剤、研磨方法および半導体集積回路装置の製造方法
TW200815288A (en) Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same
JP7666605B2 (ja) Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法
KR20220133773A (ko) 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
CN110139907A (zh) 氧化铈研磨粒
TWI488952B (zh) Ｃｍｐ研磿液以及使用此ｃｍｐ研磨液的研磨方法以及半導體基板的製造方法
US20150175846A1 (en) Manufacturing method of polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
CN108473850A (zh) 低k基板的抛光方法
JP7596653B2 (ja) 研磨剤及び研磨方法
TW202334342A (zh) 研磨劑、添加液及研磨方法
TW201527507A (zh) 研磨劑及研磨方法
JP2010087454A (ja) Ｃｍｐ研磨剤及びこれを用いた研磨方法
US9328261B2 (en) Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
TW201522599A (zh) 研磨用組合物及研磨方法
US20150175847A1 (en) Manufacturing method of polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
JP2004277474A (ja) Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法