WO2008040158A1 - Liquide de polissage chimico-mécanique destiné à polir du polysilicium - Google Patents

Liquide de polissage chimico-mécanique destiné à polir du polysilicium Download PDF

Info

Publication number
WO2008040158A1
WO2008040158A1 PCT/CN2007/002716 CN2007002716W WO2008040158A1 WO 2008040158 A1 WO2008040158 A1 WO 2008040158A1 CN 2007002716 W CN2007002716 W CN 2007002716W WO 2008040158 A1 WO2008040158 A1 WO 2008040158A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing liquid
polysilicon
liquid according
silica
Prior art date
Application number
PCT/CN2007/002716
Other languages
English (en)
Chinese (zh)
Inventor
Judy Jianfen Jing
Andy Chunxiao Yang
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd. filed Critical Anji Microelectronics (Shanghai) Co., Ltd.
Priority to CN200780029104A priority Critical patent/CN101627097A/zh
Publication of WO2008040158A1 publication Critical patent/WO2008040158A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a chemical mechanical polishing liquid, and more particularly to a chemical mechanical polishing liquid for polishing polycrystalline silicon.
  • CMP chemical mechanical polishing
  • the gasket and the table rotate while maintaining a downward force on the back side of the substrate, applying an abrasive and a chemically active solution (commonly referred to as a polishing fluid or polishing slurry) to the gasket, the polishing fluid being The chemical film reaction of the film being polished begins the polishing process.
  • a polishing fluid or polishing slurry commonly referred to as a polishing fluid or polishing slurry
  • US 2003/0153189 A1 discloses a chemical mechanical polishing liquid and method for polysilicon polishing, the polishing liquid comprising a polymer surfactant and an abrasive particle selected from the group consisting of alumina and cerium oxide, the polymer surfactant a polycarboxylate surfactant, which can be used to confirm the polysilicon
  • the polishing rate of the large area of the surface is much higher than the polishing rate in the trench, thereby reducing the depression.
  • a method of manufacturing a Flash is disclosed in US 2003/0216003 A1 and US 2004/0163324 A1.
  • the invention comprises a polishing liquid for polishing polycrystalline silicon, the polishing crucible comprising at least one compound containing a -N(OH), -NH(OH), -NH 2 (OH) group, polycrystalline silicon and two using the slurry
  • the polishing selectivity of silicon oxide is greater than 50.
  • US 2004/0014321 A1 discloses an acidic polishing liquid comprising abrasive particles and an oxidizing agent, which can be used to increase the polishing selectivity of polycrystalline silicon to silicon dioxide.
  • US 2004/0123528 A1 discloses an acidic polishing liquid comprising abrasive particles and an anionic compound which can reduce the removal rate of the protective layer film and increase the removal rate selectivity ratio of the polycrystalline silicon to the protective layer film.
  • US 2005/0130428 A1 and CN 1637102 A disclose a slurry for polysilicon chemical mechanical polishing comprising one or more nonionic surfactants forming a passivation layer on a polysilicon layer and an energy A second passivation layer is formed to reduce the rate of removal of silicon nitride or silicon oxide by the second surfactant.
  • the nonionic surfactant comprises at least one compound selected from the group consisting of epoxy epoxide-propylene oxide block copolymer alcohol and ethylene oxide-glycidene triblock polymer, the slurry
  • the selectivity between the polysilicon removal rate and the insulator removal rate can be reduced by at least about 50%.
  • An object of the present invention is to provide a novel chemical mechanical polishing liquid which can better polish a polycrystalline silicon film under alkaline conditions.
  • the above object of the present invention is achieved by the following technical solutions:
  • the polishing liquid of the present invention comprises abrasive particles and water, and further comprises one or more oxidizing agents.
  • the oxidizing agent described in the present invention is preferably: I. Organic or inorganic compounds containing at least one peroxy group (- 0 - 0 ⁇ )
  • the oxidizing agent is: hydrogen peroxide and its derivatives, urea peroxide, peroxyformic acid, peracetic acid, persulfate, sodium percarbonate, periodic acid and its salts, perchloric acid and its salts Or one or more of perboric acid and its salts.
  • the concentration percentage of the oxidizing agent of the present invention is preferably 0.1 to 30% ;
  • the polishing liquid preferably has a pH of 7 to 12.
  • the abrasive particles described in the invention are silica, alumina, ceria, titania, aluminum-coated silica, aluminum-doped silica, and/or polymer abrasive particles.
  • the particle size of the abrasive particles is preferably from 30 to 150 nm ;
  • the concentration concentration of the abrasive particles is preferably 0.5 to 30% ;
  • the slurry of the present invention may further contain a pH adjuster, a viscosity modifier, a bactericide or the like to attain the effects of the present invention.
  • the positive progressive effect of the present invention is that the polishing liquid of the present invention can significantly change the removal rate of polycrystalline silicon under alkaline conditions, adjust the selectivity ratio of polycrystalline silicon to silicon dioxide, and significantly improve the planarization efficiency of polycrystalline silicon and the removal of polishing residues.
  • Example 1 Contrast polishing liquid silica (100nm) 15%, water balance, PH value 11.2;
  • polishing rate of polycrystalline silicon is 3330 A/min, and the polishing rate of silicon dioxide is 521 A/min.
  • the selectivity ratio of the two is 5.38.
  • Polishing solution 2 silica (100nm) 15%, hydrogen peroxide 2%, water balance, pH 11.2; polysilicon polishing rate is 1747 A / min, silica polishing rate is 543 A / min, two The choice ratio is 3.22.
  • Polishing solution 3 silica (100nm) 15%, hydrogen peroxide 5%, water balance, pH 11.2; polysilicon polishing rate is 950 A / min, silica polishing rate is 560 A / min, two The choice ratio is 1.70.
  • Polishing solution 4 silica (100nm) 15%, hydrogen peroxide 15%, water balance, pH 11.2; polysilicon polishing rate is 711 A / min, silica polishing rate is 580 A / min, two The choice ratio is 1.23.
  • Polishing solution 5 silica (100nm) 15%, hydrogen peroxide 20%, water balance, pH 11.2; polysilicon polishing rate is 537 A / min, silica polishing rate is 572 A / min, two The choice ratio is 0.94.
  • the process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
  • Example 2 The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
  • polishing rate of polycrystalline silicon is 2002 A/min, and the polishing rate of silicon dioxide is 375 A/min.
  • the selectivity ratio of the two is 5.34.
  • Polishing solution 6 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, PH value 7; polysilicon throw rate is 572 A / min, silica polishing rate is 151 A / min, two The choice ratio is 3.79.
  • Polishing solution 7 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, PH value 10; polysilicon polishing rate is 739 A / min, silica polishing rate is 286 A / min, two The choice ratio is 2.58.
  • Polishing solution 9 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, PH value 12; polysilicon polishing rate is 883 A / min, silica polishing rate is 484 A / min, two The choice ratio is 1.82.
  • polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Example 4 The process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Polishing solution 11 silica (100nm) 30%, hydrogen peroxide 5%, water balance, pH 11.2; polysilicon polishing rate is 1352 A / min, silica polishing rate is 916 A / min, two The choice ratio is 1.48.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Example 5 The process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Polishing solution 12 silica (100nm) 10%, peroxyacetic acid 1%, water balance, PH value 11.2; polysilicon polishing rate is 928 A / min, silica polishing rate is 391 A / min, two The choice ratio is 2.37.
  • the process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
  • Polishing solution 13 silicon dioxide (100nm) 10%, ammonium persulfate 1%, water balance, PH value 11.2; polysilicon polishing rate is 1885 A / min, silica polishing rate is 413 A / min, two The choice ratio is 4.56.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Polishing solution 14 titanium dioxide (150nm) 10%, potassium peroxide 0.1%, water balance, PH value 11.2; polysilicon polishing rate is 1232 A / min, silica polishing rate is 954 A / min, both The selection ratio is 1.29.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Polishing solution 15 aluminum oxide (30nm) 30%, sodium percarbonate 30%, water balance, PH value 11.2; polysilicon polishing rate is 2031 A / min, silica polishing rate is 2305 A / min, The choice between the two is 0.88.
  • the process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
  • the polishing liquid 16 is doped with aluminum silica (30 nm) 30%, peroxyformic acid 30%, water balance, PH value 11.2;
  • the polishing rate of polycrystalline silicon was 1857 A/min, and the polishing rate of silicon dioxide was 2159 A/min.
  • the selectivity ratio of the two was 0.86.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Example 10 The process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • the polishing liquid 17 is covered with aluminum silica (45 nm) 10%, sodium perborate and urea peroxide 10%, water balance, pH value 11.2;
  • the polishing rate of polysilicon is 962 A/min
  • the polishing rate of silicon dioxide is 846 A/min
  • the selection ratio of the two is 1.14.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Polishing solution 18 silica (70nm) 10%, periodic acid and potassium perchlorate 10%, water balance, PH value 11.2;
  • the polishing rate of polysilicon is 886 A/min, and the polishing rate of silicon dioxide is 480 A/min, two The choice ratio is 1.85.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • the materials and reagents used in the present invention are all commercially available.

Abstract

L'invention concerne un liquide de polissage chimico-mécanique destiné à polir du polysilicium, qui contient des particules abrasives et de l'eau, ainsi qu'un ou plusieurs types d'agents oxydants. Dans des conditions de base, le liquide de polissage peut sensiblement modifier le taux d'élimination de polysilicium, réguler le taux de sélectivité de polysilicium et de SiO2, et améliorer de façon évidente l'efficacité de planarisation du polysilicium et l'élimination des restes de polissage.
PCT/CN2007/002716 2006-09-15 2007-09-14 Liquide de polissage chimico-mécanique destiné à polir du polysilicium WO2008040158A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200780029104A CN101627097A (zh) 2006-09-15 2007-09-14 用于抛光多晶硅的化学机械抛光液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200610116122.2 2006-09-15
CNA2006101161222A CN101143996A (zh) 2006-09-15 2006-09-15 用于抛光多晶硅的化学机械抛光液

Publications (1)

Publication Number Publication Date
WO2008040158A1 true WO2008040158A1 (fr) 2008-04-10

Family

ID=39206738

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/002716 WO2008040158A1 (fr) 2006-09-15 2007-09-14 Liquide de polissage chimico-mécanique destiné à polir du polysilicium

Country Status (2)

Country Link
CN (2) CN101143996A (fr)
WO (1) WO2008040158A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101747842B (zh) * 2008-12-19 2014-12-31 安集微电子（上海）有限公司 一种化学机械抛光液
CN101747844B (zh) * 2008-12-19 2014-04-16 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN101696345B (zh) * 2009-10-21 2013-09-18 南昌大学 一种铝掺杂氧化铈抛光粉及其制备方法
CN113528028A (zh) * 2021-08-23 2021-10-22 长鑫存储技术有限公司 化学机械抛光液、半导体结构及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1264636A (zh) * 1999-02-18 2000-08-30 科莱恩(法国)公司 铝或铝合金导电材料层的机械化学抛光方法
CN1289810A (zh) * 1999-09-27 2001-04-04 不二见美国股份有限公司 制造存储器硬盘用的抛光组合物和抛光方法
US20010013506A1 (en) * 1998-07-24 2001-08-16 Chamberlin Timothy Scott Slurry and use thereof for polishing
CN1398938A (zh) * 2002-05-10 2003-02-26 河北工业大学 超大规模集成电路多层铜布线化学机械全局平面化抛光液
US6565767B2 (en) * 1998-11-05 2003-05-20 Jsr Corporation Polymer particles and polishing material containing them
CN1516246A (zh) * 1998-06-22 2004-07-28 ������������ʽ���� 抛光方法
US6821187B2 (en) * 2000-09-29 2004-11-23 Infineon Technologies Ag Method for chemical-mechanical polishing of a layer which is a substrate and is a metal selected from a platinum group
JP2006203188A (ja) * 2004-12-22 2006-08-03 Showa Denko Kk 研磨組成物及び研磨方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1516246A (zh) * 1998-06-22 2004-07-28 ������������ʽ���� 抛光方法
US20010013506A1 (en) * 1998-07-24 2001-08-16 Chamberlin Timothy Scott Slurry and use thereof for polishing
US6565767B2 (en) * 1998-11-05 2003-05-20 Jsr Corporation Polymer particles and polishing material containing them
CN1264636A (zh) * 1999-02-18 2000-08-30 科莱恩(法国)公司 铝或铝合金导电材料层的机械化学抛光方法
CN1289810A (zh) * 1999-09-27 2001-04-04 不二见美国股份有限公司 制造存储器硬盘用的抛光组合物和抛光方法
US6821187B2 (en) * 2000-09-29 2004-11-23 Infineon Technologies Ag Method for chemical-mechanical polishing of a layer which is a substrate and is a metal selected from a platinum group
CN1398938A (zh) * 2002-05-10 2003-02-26 河北工业大学 超大规模集成电路多层铜布线化学机械全局平面化抛光液
JP2006203188A (ja) * 2004-12-22 2006-08-03 Showa Denko Kk 研磨組成物及び研磨方法

Also Published As

Publication number Publication date
CN101143996A (zh) 2008-03-19
CN101627097A (zh) 2010-01-13

Similar Documents

Publication Publication Date Title
TWI434955B (zh) 含鎢基材的化學機械平坦化方法
JP4681261B2 (ja) 半導体層を研磨するための組成物
TWI452099B (zh) 含金屬基材的化學機械平坦化的方法及組合物
KR101053712B1 (ko) 텅스텐-함유 기판의 화학 기계적 평탄화를 위한 콤비네이션, 방법 및 조성물
TW201116614A (en) Abrasive agent, condensed one-liquid type abrasive agent, two-liquid type abrasive agent and polishing method of substrate
WO2008052423A1 (fr) Liquide de polissage chimico-mécanique pour le polissage du polysilicium
WO2008025209A1 (fr) Pâte de polissage pour matériau faiblement diélectrique
CN101652445A (zh) 多晶硅化学机械抛光液
KR20050046620A (ko) 구리 연마용 조성물 및 방법
JP2004512681A (ja) 化学機械的研磨スラリー及び研磨方法
WO2007137508A1 (fr) Suspension de polissage pour planarisation fine de surfaces et procédé d'utilisation associé
WO2012031452A1 (fr) Solution de polissage mécano-chimique
WO2009071351A1 (fr) Procédé de polissage mécano-chimique de surfaces structurées composées de régions structurées métalliques et non métalliques
CN112608685A (zh) 一种用于抛光多晶硅的化学机械抛光液
WO2006042466A1 (fr) Systeme, procede et suspension abrasive pour polissage chimico-mecanique
JP2007180534A (ja) 半導体層を研磨するための組成物
TW200815570A (en) Low dielectric polishing slurry including mixed abrasive particles
WO2008040158A1 (fr) Liquide de polissage chimico-mécanique destiné à polir du polysilicium
WO2006122492A1 (fr) Pate a polissage
CN114106706A (zh) 具有压力缓冲作用的铜互连抛光液和其磨料的制备方法
CN101868511A (zh) 一种多晶硅化学机械抛光液
JP6542766B2 (ja) 金属膜研磨スラリー組成物、及びこれを利用した金属膜研磨時に発生するスクラッチの減少方法
WO2008040182A1 (fr) Liquide de polissage chimico-mécanique pour le polissage de polysilicium
WO2012071780A1 (fr) Bouillie de polissage chimico-mécanique
WO2008058458A1 (fr) Procédé de polissage chimico-mécanique en plusieurs étapes

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780029104.3

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07816333

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07816333

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)