WO2008052423A1 - Liquide de polissage chimico-mécanique pour le polissage du polysilicium - Google Patents

Liquide de polissage chimico-mécanique pour le polissage du polysilicium Download PDF

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Publication number
WO2008052423A1
WO2008052423A1 PCT/CN2007/003018 CN2007003018W WO2008052423A1 WO 2008052423 A1 WO2008052423 A1 WO 2008052423A1 CN 2007003018 W CN2007003018 W CN 2007003018W WO 2008052423 A1 WO2008052423 A1 WO 2008052423A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing liquid
polishing
ammonium salt
polysilicon
quaternary ammonium
Prior art date
Application number
PCT/CN2007/003018
Other languages
English (en)
Chinese (zh)
Other versions
WO2008052423A8 (fr
Inventor
Judy Jianfen Jing
Andy Chunxiao Yang
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd. filed Critical Anji Microelectronics (Shanghai) Co., Ltd.
Priority to CN200780037469.0A priority Critical patent/CN101535431B/zh
Publication of WO2008052423A1 publication Critical patent/WO2008052423A1/fr
Publication of WO2008052423A8 publication Critical patent/WO2008052423A8/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing liquid, and more particularly to a chemical mechanical polishing liquid for polishing polycrystalline silicon.
  • CMP chemical mechanical polishing
  • polishing fluids or polishing slurries abrasive and chemically active solutions
  • Patent document US 2003/0153189 A1 discloses a chemical mechanical polishing liquid and method for polycrystalline silicon polishing, the polishing liquid comprising a polymer surfactant and an oxide selected from the group consisting of alumina and oxidation
  • the abrasive particles of the crucible, the polymeric surfactant is a polycarboxylate surfactant, which can be used to make the polishing rate of the large area of the polycrystalline silicon surface much higher than the polishing rate in the trench, thereby reducing the depression.
  • the patent documents US 2005/0130428 A1 and CN 1637102 A disclose a slurry for polysilicon chemical mechanical polishing comprising one or more nonionic surfactants forming a passivation layer on a polysilicon layer and a A second surfactant capable of forming a second passivation layer to reduce the rate of removal of silicon nitride or silicon oxide.
  • the nonionic surfactant comprises at least one compound selected from the group consisting of epoxy epoxide-epoxypropane block copolymer alcohol and ethylene oxide-propylene oxide triblock polymer, the slurry
  • the selectivity between the polysilicon removal rate and the insulator removal rate can be reduced by at least about 50%. Summary of invention
  • the purpose of the present invention is to better polish polycrystalline silicon under alkaline conditions, reduce the polishing rate of polycrystalline silicon and the polishing rate ratio of polycrystalline silicon to silicon dioxide, and significantly improve the planarization efficiency of polycrystalline silicon, thereby providing a method for polishing polycrystalline silicon.
  • Chemical mechanical polishing fluid is used to better polish polycrystalline silicon under alkaline conditions, reduce the polishing rate of polycrystalline silicon and the polishing rate ratio of polycrystalline silicon to silicon dioxide, and significantly improve the planarization efficiency of polycrystalline silicon, thereby providing a method for polishing polycrystalline silicon.
  • the polishing liquid of the present invention comprises abrasive particles and water, and is characterized by further comprising one or more quaternary ammonium salt type cationic surfactants.
  • the quaternary ammonium salt type cationic surfactant is a monoquaternary ammonium salt type and/or a Gemini quaternary ammonium salt cationic surfactant.
  • the monoquaternary ammonium salt type cationic surfactant is R1R2N+R3R4X-, wherein: - C m H 2m+1 , 8 ⁇ m ⁇ 22; R 2 and R 3 are the same, which is -CH 3 Or -C 2 3 ⁇ 4; and the same, or Rt is -CH 3 , -C 2 H 5 , -CH 2 -C 6 H 5 or - C3 ⁇ 4CH 2 OH; X—is Cl—, Br—, CH 3 S0 4 ⁇ N0 3 — or C 6 H 5 -S0 4 —.
  • the gemini quaternary ammonium salt cationic surfactant is Same as 1 3, which is -C3 ⁇ 4 or -C 2 H 5 ;
  • R 5 is benzene dimethylene, polymethylene-(CH 2 ) n -, 2 ⁇ n ⁇ 30, or polyoxyethylene-CH 2 CH 2 (OCH 2 CH 2 ) n -, l ⁇ n ⁇ 30;
  • X is C1 - or Br -.
  • the concentration of the quaternary ammonium salt type cationic surfactant is preferably from 0.0001 to 5% by weight, more preferably from 0.001 to 1%.
  • the polishing liquid preferably has a pH of 7 to 12.
  • the abrasive particles described in the invention may be silica, alumina, miscellaneous aluminum or aluminum-coated silica, ceria, titania and/or high molecular polymer abrasive particles.
  • the weight percentage of the abrasive particles is preferably from 0.5 to 30%, more preferably from 2 to 30%.
  • the polishing liquid of the present invention may further comprise a pH adjuster, a viscosity modifier and/or an antifoaming agent to attain the object of the present invention.
  • the polishing liquid of the present invention can be obtained by simply mixing the components described above.
  • the positive progress of the present invention is that the polishing liquid of the present invention can better polish polycrystalline silicon under alkaline conditions, and can also significantly reduce the removal rate of polycrystalline silicon and the selection ratio of polycrystalline silicon to silicon dioxide, and significantly improve the planarization of polycrystalline silicon. effectiveness. Summary of the invention
  • Examples 1 to 6 of the chemical mechanical polishing liquid for polishing polycrystalline silicon are given in Table 1, and the following polishing liquids are simply mixed according to the components given in the table, and adjusted to a desired pH value by a pH adjusting agent known in the art.
  • Table 1 Polycrystalline chemical mechanical polishing liquid Example 1 ⁇ Effect Example 1
  • composition of the polishing liquid 1-20 and the comparative polishing liquid 1, pH value,
  • the process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing slurry, PPG fast pad CS7 for polishing pad, and Logitech LP50 for polishing machine.
  • the raw materials and reagents used in the present invention are all commercially available products.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un liquide de polissage chimico-mécanique pour le polissage du polysilicium. Ce liquide comprend des particules abrasives et de l'eau et est caractérisé par le fait qu'il comprend en outre une ou plusieurs sortes d'agents tensio-actifs cationiques de type ammonium quaternaire. Le liquide de polissage permet de mieux polir le polysilicium dans des conditions basiques et peut de façon significative réduire la vitesse de retrait du polysilicium et le rapport de sélectivité du polysilicium et du SiO2 et peut à l'évidence améliorer le rendement de planarisation du polysilicium.
PCT/CN2007/003018 2006-10-27 2007-10-22 Liquide de polissage chimico-mécanique pour le polissage du polysilicium WO2008052423A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200780037469.0A CN101535431B (zh) 2006-10-27 2007-10-22 一种用于抛光多晶硅的化学机械抛光液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2006101176694A CN101168647A (zh) 2006-10-27 2006-10-27 一种用于抛光多晶硅的化学机械抛光液
CN200610117669.4 2006-10-27

Publications (2)

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WO2008052423A1 true WO2008052423A1 (fr) 2008-05-08
WO2008052423A8 WO2008052423A8 (fr) 2009-06-04

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Application Number Title Priority Date Filing Date
PCT/CN2007/003018 WO2008052423A1 (fr) 2006-10-27 2007-10-22 Liquide de polissage chimico-mécanique pour le polissage du polysilicium

Country Status (2)

Country Link
CN (2) CN101168647A (fr)
WO (1) WO2008052423A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102363713A (zh) * 2010-06-15 2012-02-29 罗门哈斯电子材料Cmp控股股份有限公司 稳定的化学机械抛光组合物以及抛光基板的方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
CN101665664B (zh) * 2008-09-05 2013-08-28 安集微电子（上海）有限公司 季铵盐型阳离子表面活性剂和一种化学机械抛光液的应用
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101747842B (zh) * 2008-12-19 2014-12-31 安集微电子（上海）有限公司 一种化学机械抛光液
CN101928519A (zh) * 2009-06-23 2010-12-29 安集微电子（上海）有限公司 一种化学机械抛光液及其制备方法
CN102108261A (zh) * 2009-12-25 2011-06-29 安集微电子（上海）有限公司 一种化学机械抛光液
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
CN103205205B (zh) * 2012-01-16 2016-06-22 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN104745091A (zh) * 2013-12-26 2015-07-01 安集微电子（上海）有限公司 一种化学机械抛光液及使用方法
CN110122488A (zh) * 2019-06-03 2019-08-16 临沂康爱特化工科技有限公司 一种油田返注水复合杀菌剂及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1289811A (zh) * 1999-09-27 2001-04-04 不二见美国股份有限公司 抛光组合物
US20020064955A1 (en) * 2000-10-16 2002-05-30 Lee Jae-Dong Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same
CN1359997A (zh) * 2000-12-20 2002-07-24 拜尔公司 化学机械法抛光二氧化硅薄膜用抛光膏
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
US20020177318A1 (en) * 2000-11-16 2002-11-28 Miller Anne E. Copper polish slurry for reduced interlayer dielectric erosion and method of using same
JP2004335722A (ja) * 2003-05-07 2004-11-25 Rodel Nitta Co 半導体ウェハ研磨用組成物
CN1837321A (zh) * 2005-03-08 2006-09-27 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光层间介电层的组合物和方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1289811A (zh) * 1999-09-27 2001-04-04 不二见美国股份有限公司 抛光组合物
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
US20020064955A1 (en) * 2000-10-16 2002-05-30 Lee Jae-Dong Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same
US20020177318A1 (en) * 2000-11-16 2002-11-28 Miller Anne E. Copper polish slurry for reduced interlayer dielectric erosion and method of using same
CN1359997A (zh) * 2000-12-20 2002-07-24 拜尔公司 化学机械法抛光二氧化硅薄膜用抛光膏
JP2004335722A (ja) * 2003-05-07 2004-11-25 Rodel Nitta Co 半導体ウェハ研磨用組成物
CN1837321A (zh) * 2005-03-08 2006-09-27 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光层间介电层的组合物和方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102363713A (zh) * 2010-06-15 2012-02-29 罗门哈斯电子材料Cmp控股股份有限公司 稳定的化学机械抛光组合物以及抛光基板的方法
CN102363713B (zh) * 2010-06-15 2014-12-10 罗门哈斯电子材料Cmp控股股份有限公司 稳定的化学机械抛光组合物以及抛光基板的方法

Also Published As

Publication number Publication date
CN101535431A (zh) 2009-09-16
CN101535431B (zh) 2012-12-19
CN101168647A (zh) 2008-04-30
WO2008052423A8 (fr) 2009-06-04

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