JPWO2023067925A5 - - Google Patents

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Publication number
JPWO2023067925A5
JPWO2023067925A5 JP2023554999A JP2023554999A JPWO2023067925A5 JP WO2023067925 A5 JPWO2023067925 A5 JP WO2023067925A5 JP 2023554999 A JP2023554999 A JP 2023554999A JP 2023554999 A JP2023554999 A JP 2023554999A JP WO2023067925 A5 JPWO2023067925 A5 JP WO2023067925A5
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JP
Japan
Prior art keywords
passivation layer
opening
semiconductor device
electrode
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023554999A
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English (en)
Japanese (ja)
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JPWO2023067925A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/033368 external-priority patent/WO2023067925A1/ja
Publication of JPWO2023067925A1 publication Critical patent/JPWO2023067925A1/ja
Publication of JPWO2023067925A5 publication Critical patent/JPWO2023067925A5/ja
Pending legal-status Critical Current

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JP2023554999A 2021-10-21 2022-09-06 Pending JPWO2023067925A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021172673 2021-10-21
PCT/JP2022/033368 WO2023067925A1 (ja) 2021-10-21 2022-09-06 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2023067925A1 JPWO2023067925A1 (https=) 2023-04-27
JPWO2023067925A5 true JPWO2023067925A5 (https=) 2024-07-09

Family

ID=86058989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023554999A Pending JPWO2023067925A1 (https=) 2021-10-21 2022-09-06

Country Status (2)

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JP (1) JPWO2023067925A1 (https=)
WO (1) WO2023067925A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239607A (ja) * 2012-05-16 2013-11-28 Mitsubishi Electric Corp 半導体装置
US20150255362A1 (en) * 2014-03-07 2015-09-10 Infineon Technologies Ag Semiconductor Device with a Passivation Layer and Method for Producing Thereof
JP2017069381A (ja) * 2015-09-30 2017-04-06 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US12369381B2 (en) * 2019-09-30 2025-07-22 Rohm Co., Ltd. Semiconductor device

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