JPWO2023063348A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2023063348A5 JPWO2023063348A5 JP2023554572A JP2023554572A JPWO2023063348A5 JP WO2023063348 A5 JPWO2023063348 A5 JP WO2023063348A5 JP 2023554572 A JP2023554572 A JP 2023554572A JP 2023554572 A JP2023554572 A JP 2023554572A JP WO2023063348 A5 JPWO2023063348 A5 JP WO2023063348A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- crystalline oxide
- oxide thin
- carrier concentration
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021169082 | 2021-10-14 | ||
| JP2022053470 | 2022-03-29 | ||
| PCT/JP2022/038036 WO2023063348A1 (ja) | 2021-10-14 | 2022-10-12 | 結晶酸化物薄膜、積層体及び薄膜トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023063348A1 JPWO2023063348A1 (https=) | 2023-04-20 |
| JPWO2023063348A5 true JPWO2023063348A5 (https=) | 2025-06-26 |
Family
ID=85988632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023554572A Pending JPWO2023063348A1 (https=) | 2021-10-14 | 2022-10-12 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4418330A4 (https=) |
| JP (1) | JPWO2023063348A1 (https=) |
| KR (1) | KR20240073052A (https=) |
| TW (1) | TW202329392A (https=) |
| WO (1) | WO2023063348A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026033404A1 (ja) * | 2024-08-09 | 2026-02-12 | 株式会社半導体エネルギー研究所 | 金属酸化物層の形成方法 |
| WO2026033400A1 (ja) * | 2024-08-09 | 2026-02-12 | 株式会社半導体エネルギー研究所 | 金属酸化物層の形成方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373212U (https=) | 1976-11-19 | 1978-06-19 | ||
| JPS6097458U (ja) | 1983-12-09 | 1985-07-03 | 三菱電機株式会社 | 密閉筐体 |
| JPS6289693U (https=) | 1985-11-26 | 1987-06-08 | ||
| JPS6334598U (https=) | 1986-08-22 | 1988-03-05 | ||
| WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5186611B2 (ja) | 2010-12-28 | 2013-04-17 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| JP5189674B2 (ja) * | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| WO2013021632A1 (ja) * | 2011-08-11 | 2013-02-14 | 出光興産株式会社 | 薄膜トランジスタ |
| JP6142136B2 (ja) * | 2012-02-28 | 2017-06-07 | 株式会社Ｊｏｌｅｄ | トランジスタの製造方法、表示装置の製造方法および電子機器の製造方法 |
| JP5966840B2 (ja) * | 2012-10-11 | 2016-08-10 | 住友金属鉱山株式会社 | 酸化物半導体薄膜および薄膜トランジスタ |
| CN105873881A (zh) | 2013-12-27 | 2016-08-17 | 出光兴产株式会社 | 氧化物烧结体、该烧结体的制造方法及溅射靶 |
| TWI685116B (zh) * | 2014-02-07 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2017017966A1 (ja) * | 2015-07-30 | 2017-02-02 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ |
| KR102492209B1 (ko) * | 2016-05-19 | 2023-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 산화물 반도체 및 트랜지스터 |
| CN109641757B (zh) | 2016-08-31 | 2022-02-25 | 出光兴产株式会社 | 石榴石型化合物、含有该化合物的烧结体以及溅射靶 |
| JP2018107316A (ja) | 2016-12-27 | 2018-07-05 | 住友金属鉱山株式会社 | 酸化物半導体薄膜及びその製造方法、並びに薄膜トランジスタ |
| JP6853421B2 (ja) * | 2019-03-28 | 2021-03-31 | 出光興産株式会社 | 結晶酸化物薄膜、積層体及び薄膜トランジスタ |
-
2022
- 2022-10-12 JP JP2023554572A patent/JPWO2023063348A1/ja active Pending
- 2022-10-12 KR KR1020247011837A patent/KR20240073052A/ko active Pending
- 2022-10-12 WO PCT/JP2022/038036 patent/WO2023063348A1/ja not_active Ceased
- 2022-10-12 EP EP22881043.8A patent/EP4418330A4/en active Pending
- 2022-10-14 TW TW111139024A patent/TW202329392A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI481037B (zh) | 薄膜電晶體、製造其之方法及包含其之有機電致發光裝置 | |
| US8013331B2 (en) | Thin film transistor, method of manufacturing the same, and electronic device using the same | |
| Kim et al. | Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor | |
| US8502222B2 (en) | Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device | |
| JP6976858B2 (ja) | 積層体 | |
| US20060270197A1 (en) | Compound semiconductor material and method for forming an active layer of a thin film transistor device | |
| TWI500165B (zh) | 薄膜電晶體、其製造方法及電子設備 | |
| JPWO2023063348A5 (https=) | ||
| CN116636014A (zh) | 碲基半导体器件的制造方法、由此制造的碲基半导体器件以及薄膜晶体管 | |
| US9806097B2 (en) | Metal oxide semiconductor thin film, thin film transistor, and their fabricating methods, and display apparatus | |
| JP5123768B2 (ja) | 金属酸化物膜とその製造方法、及び半導体装置 | |
| TW200937638A (en) | Field effect transistor using oxide semiconductor and method for manufacturing the same | |
| JP2010199307A (ja) | トップゲート型の電界効果型トランジスタ及びその製造方法並びにそれを備えた表示装置 | |
| CN106489209B (zh) | 薄膜晶体管 | |
| KR20140144388A (ko) | 박막 트랜지스터 기판 | |
| US10797149B2 (en) | Thin film transistor including high-dielectric insulating thin film and method of fabricating the same | |
| JP6419493B2 (ja) | コンタクト抵抗測定パターン及び半導体装置 | |
| KR102389220B1 (ko) | 결정성 izto 산화물 반도체를 구비하는 박막트랜지스터 및 이의 제조방법 | |
| KR20220068717A (ko) | 박막 트랜지스터 및 그 제조 방법, 표시 패널과 표시 장치 | |
| US20230223479A1 (en) | Thin film transistor and manufacturing method for the same | |
| CN103904125A (zh) | 薄膜晶体管 | |
| KR101144015B1 (ko) | 상온에서 증착된 Ｍｇ２Ｈｆ５Ｏ１２를 포함하는 유전체 박막, 이를 포함하는 캐퍼시터 및 트랜지스터와 이들의 제조방법 | |
| US20250351400A1 (en) | Method for manufacturing semiconductor device and semiconductor device manufactured thereby | |
| EP4600401A2 (en) | Method of preparing selenium or sulfur doped tellurium oxide thin film and thin film transistor using sputtering | |
| WO2025057882A1 (ja) | 酸化物半導体薄膜、半導体デバイス及びその製造方法、並びにスパッタリングターゲット及びスパッタリングターゲットの製造方法 |