KR20240073052A - 결정 산화물 박막, 적층체 및 박막 트랜지스터 - Google Patents

결정 산화물 박막, 적층체 및 박막 트랜지스터 Download PDF

Info

Publication number
KR20240073052A
KR20240073052A KR1020247011837A KR20247011837A KR20240073052A KR 20240073052 A KR20240073052 A KR 20240073052A KR 1020247011837 A KR1020247011837 A KR 1020247011837A KR 20247011837 A KR20247011837 A KR 20247011837A KR 20240073052 A KR20240073052 A KR 20240073052A
Authority
KR
South Korea
Prior art keywords
thin film
oxide thin
crystal oxide
carrier concentration
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247011837A
Other languages
English (en)
Korean (ko)
Inventor
에미 가와시마
유키 츠루마
다이치 사사키
고지 야마구치
노부히로 이와세
Original Assignee
이데미쓰 고산 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데미쓰 고산 가부시키가이샤 filed Critical 이데미쓰 고산 가부시키가이샤
Publication of KR20240073052A publication Critical patent/KR20240073052A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H01L29/24—
    • H01L29/78696—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
KR1020247011837A 2021-10-14 2022-10-12 결정 산화물 박막, 적층체 및 박막 트랜지스터 Pending KR20240073052A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2021-169082 2021-10-14
JP2021169082 2021-10-14
JPJP-P-2022-053470 2022-03-29
JP2022053470 2022-03-29
PCT/JP2022/038036 WO2023063348A1 (ja) 2021-10-14 2022-10-12 結晶酸化物薄膜、積層体及び薄膜トランジスタ

Publications (1)

Publication Number Publication Date
KR20240073052A true KR20240073052A (ko) 2024-05-24

Family

ID=85988632

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247011837A Pending KR20240073052A (ko) 2021-10-14 2022-10-12 결정 산화물 박막, 적층체 및 박막 트랜지스터

Country Status (5)

Country Link
EP (1) EP4418330A4 (https=)
JP (1) JPWO2023063348A1 (https=)
KR (1) KR20240073052A (https=)
TW (1) TW202329392A (https=)
WO (1) WO2023063348A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026033404A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 金属酸化物層の形成方法
WO2026033400A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 金属酸化物層の形成方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5373212U (https=) 1976-11-19 1978-06-19
JPS6097458U (ja) 1983-12-09 1985-07-03 三菱電機株式会社 密閉筐体
JPS6289693U (https=) 1985-11-26 1987-06-08
JPS6334598U (https=) 1986-08-22 1988-03-05
WO2018043323A1 (ja) 2016-08-31 2018-03-08 出光興産株式会社 新規ガーネット化合物、それを含有する焼結体及びスパッタリングターゲット
JP2018107316A (ja) 2016-12-27 2018-07-05 住友金属鉱山株式会社 酸化物半導体薄膜及びその製造方法、並びに薄膜トランジスタ
WO2020196716A1 (ja) 2019-03-28 2020-10-01 出光興産株式会社 結晶酸化物薄膜、積層体及び薄膜トランジスタ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5186611B2 (ja) 2010-12-28 2013-04-17 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
JP5189674B2 (ja) * 2010-12-28 2013-04-24 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
WO2013021632A1 (ja) * 2011-08-11 2013-02-14 出光興産株式会社 薄膜トランジスタ
JP6142136B2 (ja) * 2012-02-28 2017-06-07 株式会社Ｊｏｌｅｄ トランジスタの製造方法、表示装置の製造方法および電子機器の製造方法
JP5966840B2 (ja) * 2012-10-11 2016-08-10 住友金属鉱山株式会社 酸化物半導体薄膜および薄膜トランジスタ
CN105873881A (zh) 2013-12-27 2016-08-17 出光兴产株式会社 氧化物烧结体、该烧结体的制造方法及溅射靶
TWI685116B (zh) * 2014-02-07 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置
WO2017017966A1 (ja) * 2015-07-30 2017-02-02 出光興産株式会社 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ
KR102492209B1 (ko) * 2016-05-19 2023-01-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 산화물 반도체 및 트랜지스터

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5373212U (https=) 1976-11-19 1978-06-19
JPS6097458U (ja) 1983-12-09 1985-07-03 三菱電機株式会社 密閉筐体
JPS6289693U (https=) 1985-11-26 1987-06-08
JPS6334598U (https=) 1986-08-22 1988-03-05
WO2018043323A1 (ja) 2016-08-31 2018-03-08 出光興産株式会社 新規ガーネット化合物、それを含有する焼結体及びスパッタリングターゲット
JP2018107316A (ja) 2016-12-27 2018-07-05 住友金属鉱山株式会社 酸化物半導体薄膜及びその製造方法、並びに薄膜トランジスタ
WO2020196716A1 (ja) 2019-03-28 2020-10-01 出光興産株式会社 結晶酸化物薄膜、積層体及び薄膜トランジスタ

Also Published As

Publication number Publication date
TW202329392A (zh) 2023-07-16
EP4418330A4 (en) 2026-02-25
WO2023063348A1 (ja) 2023-04-20
EP4418330A1 (en) 2024-08-21
JPWO2023063348A1 (https=) 2023-04-20

Similar Documents

Publication Publication Date Title
KR101540127B1 (ko) 박막 트랜지스터, 다결정 산화물 반도체 박막의 제조 방법, 및 박막 트랜지스터의 제조 방법
TWI786387B (zh) 結晶氧化物薄膜、積層體及薄膜電晶體
JP2012253315A (ja) 酸化物半導体薄膜層を有する積層構造及び薄膜トランジスタ
JP6178733B2 (ja) 積層構造、その製造方法及び薄膜トランジスタ
JP2014017496A (ja) 薄膜トランジスタ、その製造方法、及び表示装置
JP2014229666A (ja) 薄膜トランジスタ
KR20240073052A (ko) 결정 산화물 박막, 적층체 및 박막 트랜지스터
JP2015032655A (ja) 薄膜トランジスタ
US20250338563A1 (en) Laminate structure and thin film transistor
KR20250016140A (ko) 적층 구조 및 박막 트랜지스터
KR20200066372A (ko) 산화물 반도체 박막
CN118103994A (zh) 晶体氧化物薄膜、层叠体及薄膜晶体管
KR20250016141A (ko) 적층 구조 및 박막 트랜지스터
KR20240074786A (ko) 결정 산화물 박막 및 그 제조 방법, 그리고 박막 트랜지스터 및 그 제조 방법
KR20260005233A (ko) 반도체 디바이스 및 전자 기기
WO2026014513A1 (ja) 結晶酸化物膜、薄膜トランジスタ及び電子機器
CN118103963A (zh) 晶体氧化物薄膜及其制造方法、以及薄膜晶体管及其制造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902