TW202329392A - 結晶氧化物薄膜、積層體及薄膜電晶體 - Google Patents

結晶氧化物薄膜、積層體及薄膜電晶體 Download PDF

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Publication number
TW202329392A
TW202329392A TW111139024A TW111139024A TW202329392A TW 202329392 A TW202329392 A TW 202329392A TW 111139024 A TW111139024 A TW 111139024A TW 111139024 A TW111139024 A TW 111139024A TW 202329392 A TW202329392 A TW 202329392A
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TW
Taiwan
Prior art keywords
thin film
crystalline oxide
oxide thin
region
film
Prior art date
Application number
TW111139024A
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English (en)
Chinese (zh)
Inventor
川嶋絵美
霍間勇輝
佐佐木大地
山口幸士
岩瀨信博
Original Assignee
日商出光興產股份有限公司
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Application filed by 日商出光興產股份有限公司 filed Critical 日商出光興產股份有限公司
Publication of TW202329392A publication Critical patent/TW202329392A/zh

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6757Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
TW111139024A 2021-10-14 2022-10-14 結晶氧化物薄膜、積層體及薄膜電晶體 TW202329392A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021-169082 2021-10-14
JP2021169082 2021-10-14
JP2022-053470 2022-03-29
JP2022053470 2022-03-29

Publications (1)

Publication Number Publication Date
TW202329392A true TW202329392A (zh) 2023-07-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW111139024A TW202329392A (zh) 2021-10-14 2022-10-14 結晶氧化物薄膜、積層體及薄膜電晶體

Country Status (5)

Country Link
EP (1) EP4418330A4 (https=)
JP (1) JPWO2023063348A1 (https=)
KR (1) KR20240073052A (https=)
TW (1) TW202329392A (https=)
WO (1) WO2023063348A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026033404A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 金属酸化物層の形成方法
WO2026033400A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 金属酸化物層の形成方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5373212U (https=) 1976-11-19 1978-06-19
JPS6097458U (ja) 1983-12-09 1985-07-03 三菱電機株式会社 密閉筐体
JPS6289693U (https=) 1985-11-26 1987-06-08
JPS6334598U (https=) 1986-08-22 1988-03-05
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5186611B2 (ja) 2010-12-28 2013-04-17 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
JP5189674B2 (ja) * 2010-12-28 2013-04-24 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
WO2013021632A1 (ja) * 2011-08-11 2013-02-14 出光興産株式会社 薄膜トランジスタ
JP6142136B2 (ja) * 2012-02-28 2017-06-07 株式会社Joled トランジスタの製造方法、表示装置の製造方法および電子機器の製造方法
JP5966840B2 (ja) * 2012-10-11 2016-08-10 住友金属鉱山株式会社 酸化物半導体薄膜および薄膜トランジスタ
CN105873881A (zh) 2013-12-27 2016-08-17 出光兴产株式会社 氧化物烧结体、该烧结体的制造方法及溅射靶
TWI685116B (zh) * 2014-02-07 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置
WO2017017966A1 (ja) * 2015-07-30 2017-02-02 出光興産株式会社 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ
KR102492209B1 (ko) * 2016-05-19 2023-01-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 산화물 반도체 및 트랜지스터
CN109641757B (zh) 2016-08-31 2022-02-25 出光兴产株式会社 石榴石型化合物、含有该化合物的烧结体以及溅射靶
JP2018107316A (ja) 2016-12-27 2018-07-05 住友金属鉱山株式会社 酸化物半導体薄膜及びその製造方法、並びに薄膜トランジスタ
JP6853421B2 (ja) * 2019-03-28 2021-03-31 出光興産株式会社 結晶酸化物薄膜、積層体及び薄膜トランジスタ

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Publication number Publication date
EP4418330A4 (en) 2026-02-25
WO2023063348A1 (ja) 2023-04-20
EP4418330A1 (en) 2024-08-21
JPWO2023063348A1 (https=) 2023-04-20
KR20240073052A (ko) 2024-05-24

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