JPWO2022202342A5 - - Google Patents

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Publication number
JPWO2022202342A5
JPWO2022202342A5 JP2023508973A JP2023508973A JPWO2022202342A5 JP WO2022202342 A5 JPWO2022202342 A5 JP WO2022202342A5 JP 2023508973 A JP2023508973 A JP 2023508973A JP 2023508973 A JP2023508973 A JP 2023508973A JP WO2022202342 A5 JPWO2022202342 A5 JP WO2022202342A5
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JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
layer
conductivity type
mesa structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023508973A
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English (en)
Japanese (ja)
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JPWO2022202342A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/010402 external-priority patent/WO2022202342A1/ja
Publication of JPWO2022202342A1 publication Critical patent/JPWO2022202342A1/ja
Publication of JPWO2022202342A5 publication Critical patent/JPWO2022202342A5/ja
Pending legal-status Critical Current

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JP2023508973A 2021-03-23 2022-03-09 Pending JPWO2022202342A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021048526 2021-03-23
PCT/JP2022/010402 WO2022202342A1 (ja) 2021-03-23 2022-03-09 紫外線発光素子

Publications (2)

Publication Number Publication Date
JPWO2022202342A1 JPWO2022202342A1 (https=) 2022-09-29
JPWO2022202342A5 true JPWO2022202342A5 (https=) 2023-12-11

Family

ID=83395724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023508973A Pending JPWO2022202342A1 (https=) 2021-03-23 2022-03-09

Country Status (4)

Country Link
US (1) US20240178344A1 (https=)
JP (1) JPWO2022202342A1 (https=)
CN (1) CN116830281A (https=)
WO (1) WO2022202342A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3241976B2 (ja) * 1995-10-16 2001-12-25 株式会社東芝 半導体発光素子
JPH11354845A (ja) * 1998-06-10 1999-12-24 Matsushita Electron Corp ＧａＮ系化合物半導体発光素子
JP4149677B2 (ja) * 2001-02-09 2008-09-10 株式会社東芝 発光装置及びその製造方法
JP2003051610A (ja) * 2001-08-03 2003-02-21 Nichia Chem Ind Ltd Ｌｅｄ素子
JP2003243709A (ja) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
JP4201609B2 (ja) * 2003-01-24 2008-12-24 三洋電機株式会社 半導体発光素子および半導体素子
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
JP2011009502A (ja) * 2009-06-26 2011-01-13 Showa Denko Kk 発光素子、その製造方法、ランプ、電子機器及び機械装置
JP5521611B2 (ja) * 2010-02-15 2014-06-18 ソニー株式会社 光装置および光機器
WO2020122137A1 (ja) * 2018-12-14 2020-06-18 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
CN111384293B (zh) * 2018-12-31 2023-06-09 乐金显示有限公司 发光二极管显示装置

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