JPWO2022202342A1 - - Google Patents
Info
- Publication number
- JPWO2022202342A1 JPWO2022202342A1 JP2023508973A JP2023508973A JPWO2022202342A1 JP WO2022202342 A1 JPWO2022202342 A1 JP WO2022202342A1 JP 2023508973 A JP2023508973 A JP 2023508973A JP 2023508973 A JP2023508973 A JP 2023508973A JP WO2022202342 A1 JPWO2022202342 A1 JP WO2022202342A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021048526 | 2021-03-23 | ||
| PCT/JP2022/010402 WO2022202342A1 (ja) | 2021-03-23 | 2022-03-09 | 紫外線発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022202342A1 true JPWO2022202342A1 (https=) | 2022-09-29 |
| JPWO2022202342A5 JPWO2022202342A5 (https=) | 2023-12-11 |
Family
ID=83395724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023508973A Pending JPWO2022202342A1 (https=) | 2021-03-23 | 2022-03-09 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240178344A1 (https=) |
| JP (1) | JPWO2022202342A1 (https=) |
| CN (1) | CN116830281A (https=) |
| WO (1) | WO2022202342A1 (https=) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116189A (ja) * | 1995-10-16 | 1997-05-02 | Toshiba Corp | 半導体発光素子 |
| JPH11354845A (ja) * | 1998-06-10 | 1999-12-24 | Matsushita Electron Corp | ＧａＮ系化合物半導体発光素子 |
| JP2003243709A (ja) * | 2002-02-15 | 2003-08-29 | Matsushita Electric Works Ltd | 半導体発光素子 |
| JP2005322847A (ja) * | 2004-05-11 | 2005-11-17 | Stanley Electric Co Ltd | 半導体発光装置とその製造方法 |
| JP2011009502A (ja) * | 2009-06-26 | 2011-01-13 | Showa Denko Kk | 発光素子、その製造方法、ランプ、電子機器及び機械装置 |
| JP2011166068A (ja) * | 2010-02-15 | 2011-08-25 | Sony Corp | 光装置および光機器 |
| WO2020122137A1 (ja) * | 2018-12-14 | 2020-06-18 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
| US20200212102A1 (en) * | 2018-12-31 | 2020-07-02 | Lg Display Co., Ltd. | Light emitting diode display apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4149677B2 (ja) * | 2001-02-09 | 2008-09-10 | 株式会社東芝 | 発光装置及びその製造方法 |
| JP2003051610A (ja) * | 2001-08-03 | 2003-02-21 | Nichia Chem Ind Ltd | Ｌｅｄ素子 |
| JP4201609B2 (ja) * | 2003-01-24 | 2008-12-24 | 三洋電機株式会社 | 半導体発光素子および半導体素子 |
-
2022
- 2022-03-09 WO PCT/JP2022/010402 patent/WO2022202342A1/ja not_active Ceased
- 2022-03-09 JP JP2023508973A patent/JPWO2022202342A1/ja active Pending
- 2022-03-09 US US18/283,346 patent/US20240178344A1/en active Pending
- 2022-03-09 CN CN202280014017.5A patent/CN116830281A/zh active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116189A (ja) * | 1995-10-16 | 1997-05-02 | Toshiba Corp | 半導体発光素子 |
| JPH11354845A (ja) * | 1998-06-10 | 1999-12-24 | Matsushita Electron Corp | ＧａＮ系化合物半導体発光素子 |
| JP2003243709A (ja) * | 2002-02-15 | 2003-08-29 | Matsushita Electric Works Ltd | 半導体発光素子 |
| JP2005322847A (ja) * | 2004-05-11 | 2005-11-17 | Stanley Electric Co Ltd | 半導体発光装置とその製造方法 |
| JP2011009502A (ja) * | 2009-06-26 | 2011-01-13 | Showa Denko Kk | 発光素子、その製造方法、ランプ、電子機器及び機械装置 |
| JP2011166068A (ja) * | 2010-02-15 | 2011-08-25 | Sony Corp | 光装置および光機器 |
| WO2020122137A1 (ja) * | 2018-12-14 | 2020-06-18 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
| US20200212102A1 (en) * | 2018-12-31 | 2020-07-02 | Lg Display Co., Ltd. | Light emitting diode display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022202342A1 (ja) | 2022-09-29 |
| CN116830281A (zh) | 2023-09-29 |
| US20240178344A1 (en) | 2024-05-30 |
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