CN116830281A - 紫外线发光元件 - Google Patents

紫外线发光元件 Download PDF

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Publication number
CN116830281A
CN116830281A CN202280014017.5A CN202280014017A CN116830281A CN 116830281 A CN116830281 A CN 116830281A CN 202280014017 A CN202280014017 A CN 202280014017A CN 116830281 A CN116830281 A CN 116830281A
Authority
CN
China
Prior art keywords
semiconductor layer
conductivity type
light emitting
mesa structure
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280014017.5A
Other languages
English (en)
Chinese (zh)
Inventor
山田智也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Corp filed Critical Asahi Kasei Corp
Publication of CN116830281A publication Critical patent/CN116830281A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Led Devices (AREA)
CN202280014017.5A 2021-03-23 2022-03-09 紫外线发光元件 Pending CN116830281A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021048526 2021-03-23
JP2021-048526 2021-03-23
PCT/JP2022/010402 WO2022202342A1 (ja) 2021-03-23 2022-03-09 紫外線発光素子

Publications (1)

Publication Number Publication Date
CN116830281A true CN116830281A (zh) 2023-09-29

Family

ID=83395724

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280014017.5A Pending CN116830281A (zh) 2021-03-23 2022-03-09 紫外线发光元件

Country Status (4)

Country Link
US (1) US20240178344A1 (https=)
JP (1) JPWO2022202342A1 (https=)
CN (1) CN116830281A (https=)
WO (1) WO2022202342A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3241976B2 (ja) * 1995-10-16 2001-12-25 株式会社東芝 半導体発光素子
JPH11354845A (ja) * 1998-06-10 1999-12-24 Matsushita Electron Corp ＧａＮ系化合物半導体発光素子
JP4149677B2 (ja) * 2001-02-09 2008-09-10 株式会社東芝 発光装置及びその製造方法
JP2003051610A (ja) * 2001-08-03 2003-02-21 Nichia Chem Ind Ltd Ｌｅｄ素子
JP2003243709A (ja) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
JP4201609B2 (ja) * 2003-01-24 2008-12-24 三洋電機株式会社 半導体発光素子および半導体素子
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
JP2011009502A (ja) * 2009-06-26 2011-01-13 Showa Denko Kk 発光素子、その製造方法、ランプ、電子機器及び機械装置
JP5521611B2 (ja) * 2010-02-15 2014-06-18 ソニー株式会社 光装置および光機器
WO2020122137A1 (ja) * 2018-12-14 2020-06-18 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
CN111384293B (zh) * 2018-12-31 2023-06-09 乐金显示有限公司 发光二极管显示装置

Also Published As

Publication number Publication date
JPWO2022202342A1 (https=) 2022-09-29
WO2022202342A1 (ja) 2022-09-29
US20240178344A1 (en) 2024-05-30

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