WO2022202342A1 - 紫外線発光素子 - Google Patents

紫外線発光素子 Download PDF

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Publication number
WO2022202342A1
WO2022202342A1 PCT/JP2022/010402 JP2022010402W WO2022202342A1 WO 2022202342 A1 WO2022202342 A1 WO 2022202342A1 JP 2022010402 W JP2022010402 W JP 2022010402W WO 2022202342 A1 WO2022202342 A1 WO 2022202342A1
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Prior art keywords
semiconductor layer
light emitting
conductivity type
mesa structure
layer
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PCT/JP2022/010402
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English (en)
French (fr)
Japanese (ja)
Inventor
智也 山田
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Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
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Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
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Priority to JP2023508973A priority Critical patent/JPWO2022202342A1/ja
Priority to US18/283,346 priority patent/US20240178344A1/en
Priority to CN202280014017.5A priority patent/CN116830281A/zh
Publication of WO2022202342A1 publication Critical patent/WO2022202342A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Definitions

  • the present disclosure relates to ultraviolet light emitting elements.
  • a conventional ultraviolet light-emitting element for example, a light-emitting element in which a part of a nitride semiconductor layer has a mesa structure is known in order to constrict current and improve current density (for example, Patent Document 1).
  • the ultraviolet light emitting element has a longer life, that is, that the increase in driving voltage is suppressed even if it is continuously energized, and that the deterioration of the output is suppressed.
  • the ultraviolet light emitting device described above does not have a sufficiently long life.
  • An object of the present disclosure is to provide a long-life ultraviolet light-emitting element.
  • An ultraviolet light emitting device includes a substrate, a nitride semiconductor laminate disposed on the substrate, and a first electrode and a second electrode, wherein the nitride semiconductor laminate comprises a first a semiconductor layer of one conductivity type, a light emitting mesa structure arranged on a first semiconductor layer of the first conductivity type, and a light emitting mesa structure arranged on the semiconductor layer of the first conductivity type and spatially with the light emitting mesa structure a separate protective mesa structure, the light emitting mesa structure comprising a second semiconductor layer of first conductivity type and a first quantum well layer disposed on the second semiconductor layer of first conductivity type.
  • the protective mesa structure includes the third semiconductor layer of the first conductivity type and the third semiconductor layer of the first conductivity type.
  • a second quantum well layer disposed on the semiconductor layer of conductivity type; and a second semiconductor layer of second conductivity type disposed on the second quantum well layer; and the second electrode is disposed on the first second conductivity type semiconductor layer of the light emitting mesa structure.
  • FIG. 1 is a schematic plan view showing a plan configuration of an ultraviolet light emitting device according to a first embodiment of the present disclosure
  • FIG. 1 is a cross-sectional schematic diagram showing a cross-sectional configuration of an ultraviolet light emitting device according to a first embodiment of the present disclosure
  • FIG. It is a schematic plan view showing a planar configuration of a conventional ultraviolet light emitting device.
  • It is a cross-sectional schematic diagram which shows the cross-sectional structure of the conventional ultraviolet light emitting element.
  • FIG. 3 is a schematic plan view illustrating the arrangement of protective mesa structures in the ultraviolet light emitting device according to the first embodiment of the present disclosure
  • FIG. 3 is a schematic plan view showing another planar configuration of the ultraviolet light emitting device according to the first embodiment of the present disclosure;
  • An ultraviolet light emitting element includes a substrate, a nitride semiconductor laminate arranged on the substrate, a first electrode and a second electrode;
  • the nitride semiconductor laminate includes a first semiconductor layer of the first conductivity type, a light-emitting mesa structure arranged on the first semiconductor layer of the first conductivity type, and arranged on the semiconductor layer of the first conductivity type. and a protective mesa structure spatially separated from the light emitting mesa structure.
  • the light-emitting mesa structure includes a second semiconductor layer of the first conductivity type, a first quantum well layer disposed on the second semiconductor layer of the first conductivity type, and a quantum well layer disposed on the first quantum well layer. and a first semiconductor layer of the second conductivity type.
  • the protective mesa structure includes a third semiconductor layer of the first conductivity type, a second quantum well layer arranged on the third semiconductor layer of the first conductivity type, and a protective mesa structure arranged on the second quantum well layer. and a second second-conductivity-type semiconductor layer.
  • the first electrode is arranged on the first semiconductor layer of the first conductivity type.
  • the second electrode is arranged on the first second conductivity type semiconductor layer of the light emitting mesa structure.
  • the ultraviolet light emitting device achieves long life by having the above-described configuration. Although the mechanism is not clear, it is presumed that the provision of the protective mesa structure suppresses oxidation due to oxygen in the air and deterioration due to water vapor, which are factors of deterioration. Moreover, by surrounding the light-emitting mesa structure and the first electrode with the protective mesa structure, it is possible to suppress the progress of oxidation and deterioration of the semiconductor progressing from the chip end, thereby achieving a further extension of life.
  • 2A and 2B show a planar structure of a conventional ultraviolet light emitting device (FIG.
  • the conventional ultraviolet light emitting device shown in FIGS. 2A and 2B includes a substrate 110, a first first conductivity type semiconductor layer 121, a light emitting mesa structure 122, a first electrode 130, a second electrode 140, an insulating layer 150.
  • the conventional ultraviolet light emitting element also has a protective film 150 so that the light emitting mesa structure 122 and the surface of the first first conductivity type semiconductor layer 121 do not come into direct contact with the atmosphere. .
  • the ultraviolet light emitting element 1 according to the present embodiment having the protective mesa structure 23 is remarkably superior in terms of extension of life.
  • the protective mesa structure may have the same layer structure as the light-emitting mesa structure, it may be preferable from the viewpoint that it is possible to achieve a long life without adding an additional process to the manufacturing process.
  • a specific configuration example of the ultraviolet light emitting element 1 will be described below with reference to FIG.
  • FIG. 1A and 1B are schematic diagrams for explaining an ultraviolet light emitting device 1 according to this embodiment.
  • 1A is a schematic plan view showing the planar structure of the ultraviolet light emitting element 1
  • FIG. 1B is a schematic cross-sectional view showing the cross-sectional structure of the ultraviolet light emitting element 1 taken along the line AA shown in FIG. 1A.
  • the ultraviolet light emitting device 1 according to this embodiment includes a substrate 10 , a nitride semiconductor laminate 20 arranged on the substrate 10 , a first electrode 30 and a second electrode 40 , and an insulating layer 50 . Note that FIG. 1A does not show the insulating layer 50 in order to facilitate the description of the planar configuration of the ultraviolet light emitting device 1 .
  • the nitride semiconductor laminate 20 includes a first first-conductivity-type semiconductor layer 21, a light-emitting mesa structure portion 22 disposed on the first first-conductivity-type semiconductor layer 21, and a first first-conductivity-type semiconductor It has a protective mesa structure 23 disposed on the layer 21 and spatially separated from the light emitting mesa structure 22 .
  • the light-emitting mesa structure 22 includes a second semiconductor layer 221 of the first conductivity type, a first quantum well layer 222 arranged on the second semiconductor layer 221 of the first conductivity type, and a quantum well layer 222 on the first quantum well layer 222 . and a first second-conductivity-type semiconductor layer 223 arranged in the .
  • the protective mesa structure portion 23 includes a third semiconductor layer 231 of the first conductivity type, a second quantum well layer 232 disposed on the third semiconductor layer of the first conductivity type, and a second quantum well layer and a second second conductivity type semiconductor layer 233 disposed on 232 .
  • the first electrode 30 is arranged on the first semiconductor layer 21 of the first conductivity type.
  • the second electrode 40 is arranged on the first second conductivity type semiconductor layer 223 of the light emitting mesa structure 22 .
  • the insulating layer 50 includes a portion of the upper surface of the protective mesa structure 23 and a portion of the first first conductivity type semiconductor layer 21 (the upper portion of the first first conductivity type semiconductor layer 21). area where none of the light-emitting mesa structure 22, the protective mesa structure 23 and the first electrode 30 are arranged).
  • the substrate 10 is not particularly limited as long as the first semiconductor layer 21 of the first conductivity type can be formed on the substrate 10 .
  • the substrate 10 include sapphire, Si, SiC, MgO, Ga 2 O 3 , ZnO, GaN, InN, AlN, or mixed crystal substrates thereof.
  • the difference in lattice constant from the first semiconductor layer 21 of the first conductivity type formed on the substrate 10 is small, and growth in a lattice matching system can reduce threading dislocations, and lattice distortion for generating hole gas.
  • the substrate 10 may contain impurities. Further, the substrate 10 may be processed on the surface opposite to the surface on which the first semiconductor layer 21 of the first conductivity type is formed, from the viewpoint of improving light extraction.
  • the nitride semiconductor laminate 20 includes a first first-conductivity-type semiconductor layer 21, a light-emitting mesa structure 22 disposed on the first first-conductivity-type semiconductor layer 21, and a protective mesa structure 23. I'm in.
  • the light-emitting mesa structure portion 22 and the protective mesa structure portion 23 have a mesa structure protruding from a portion of the first semiconductor layer 21 of the first conductivity type.
  • a known mesa structure is formed on the substrate 10 using a technique such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD). It is possible to form by laminating each layer using the film forming apparatus, forming a mask pattern by photolithography, and etching a desired region by dry etching or wet etching.
  • MBE molecular beam epitaxy
  • MOCVD metal organic chemical vapor deposition
  • the light-emitting mesa structure 22 and the protection mesa structure 23 are spatially separated.
  • spatially separated means that the side surface of the light-emitting mesa structure 22 and the side surface of the protection mesa structure 23 are present and do not touch each other.
  • the protective mesa structure 23 is arranged so as to surround the light emitting mesa structure 22 in plan view.
  • “surrounding” means that 90% or more of the sides of the smallest convex polygon surrounding all of the light-emitting mesa structure 22 are opposed to the side surfaces of the protection mesa structure 23 in plan view. .
  • FIG. 3 is a plan view showing the sides (peripheral lines) of the smallest convex polygon surrounding all of the light-emitting mesa structures 22 of the ultraviolet light-emitting device 1 (see FIG. 1A) by two-dot chain lines.
  • all sides (100%) of the convex polygon indicated by the chain double-dashed line face the side surface of the protective mesa structure 23 (inner side of the protective mesa structure 23 in FIG. 3).
  • the protective mesa structure 23 is arranged to surround the light emitting mesa structure 22 in plan view.
  • the minimum convex polygon surrounding one continuous protective mesa structure 23 covers the electrode in a plan view, it corresponds to "surrounding arrangement".
  • FIG. 3 also shows a dashed line that is the side (peripheral line) of the smallest convex polygon surrounding the protective mesa structure 23 of the ultraviolet light emitting element 1 (see FIG. 1A).
  • the protective mesa structure portion 23 is the light-emitting mesa structure in plan view. It can be said that they are arranged so as to surround the portion 22 . Specifically, as shown in FIG.
  • the outer peripheral line of the minimum convex polygon surrounding one continuous protective mesa structure 23 is the outline of the ultraviolet light emitting element shown in FIG. Since the convex polygon covers the electrode in plan view, it can be said that the protective mesa structure 23 is arranged to surround the light emitting mesa structure 22 in plan view.
  • the light-emitting mesa structure 22 is composed of a second semiconductor layer 221 of the first conductivity type, a first quantum well layer 222 and a semiconductor layer 223 of the first conductivity type.
  • the protective mesa structure portion 23 is composed of a third first conductivity type semiconductor layer 231 , a second quantum well layer 232 and a second second conductivity type semiconductor layer 233 .
  • first conductivity type and second conductivity type mean that one is of n-type conductivity and the other is of p-type conductivity. That is, when the nitride semiconductor layer of the first conductivity type is n-type, the nitride semiconductor layer of the second conductivity type is p-type. From the viewpoint of productivity and luminous efficiency, the nitride semiconductor layer of the first conductivity type is preferably n-type.
  • a part of the edge of the protective mesa structure 23 overlaps a part of the edge of the substrate 10 , that is, the side surface of the protection mesa structure 23 is arranged substantially in the same plane as the side surface of the substrate 10 .
  • the protective mesa structure 23 can cover the first semiconductor layer 21 of the first conductivity type up to the chip outer periphery, and a wide area on the first semiconductor layer 21 of the first conductivity type can be protected.
  • the Al composition ratio of the first first-conductivity-type semiconductor layer 21 is high, the first first-conductivity-type semiconductor layer 21 tends to deteriorate easily.
  • the Al composition of the second second-conductivity-type semiconductor layer 233, which is the uppermost layer, is low, and the exposed area of the first-conductivity-type semiconductor layer 21 can be reduced by being protected by the protective mesa structure 23, which is less susceptible to deterioration.
  • the protective mesa structure 23 which is less susceptible to deterioration.
  • deterioration of the first semiconductor layer 21 of the first conductivity type can be suppressed, and the UV light emitting device 1 having a longer life can be realized.
  • the term “overlapping” means that the offset between a portion of the edge of the protective mesa structure 23 and the edge of the substrate 10 is 2 ⁇ m or less in plan view.
  • the first conductivity type semiconductor layer includes a first first conductivity type semiconductor layer 21 , a second first conductivity type semiconductor layer 221 , and a third first conductivity type semiconductor layer 231 .
  • a first first conductivity type semiconductor layer 21 is directly formed on the substrate 10 .
  • the first first-conductivity-type semiconductor layer 21 is formed by providing a layer other than the first first-conductivity-type semiconductor layer 21 on the substrate 10, and providing the first first-conductivity-type semiconductor layer 21 thereon. It's okay to be.
  • a buffer layer (not shown) may be provided on the substrate 10, and the first first conductivity type semiconductor layer 21 may be provided on the buffer layer.
  • the first first-conductivity-type semiconductor layer 21, the second first-conductivity-type semiconductor layer 221, and the third first-conductivity-type semiconductor layer 231 are made of Al x Ga 1-x N (x>0.3). and more preferably made of n-type Al x Ga 1-x N (x>0.3). Thereby, the luminous efficiency of the ultraviolet light emitting element 1 is improved.
  • the quantum well layers include first quantum well layer 222 and second quantum well layer 232 .
  • the first quantum well layer 222 is provided directly on the second first conductivity type semiconductor layer 221, and the second quantum well layer 232 is provided directly on the third first conductivity type semiconductor layer. 231 directly.
  • the first quantum well layer 222 may be provided on a layer other than the quantum well layer provided on the second semiconductor layer 221 of the first conductivity type. Specifically, even if an AlGaN layer (not shown) not doped with impurities is provided on the second first conductivity type semiconductor layer 221 and the first quantum well layer 222 is provided on the AlGaN layer, good.
  • the second quantum well layer 232 may be provided on an impurity-undoped AlGaN layer or the like formed on the third semiconductor layer 231 of the first conductivity type.
  • the first quantum well layer 222 and the second quantum well layer 232 are not particularly limited as long as they are nitride semiconductor layers. desirable.
  • the first quantum well layer 222 and the second quantum well layer 232 are mixed with other group V elements such as P, As, and Sb, and impurities such as C, H, F, O, Mg, and Si. You may have
  • the first quantum well layer 222 and the second quantum well layer 232 may have a multiple quantum well structure or a single quantum well structure, but from the viewpoint of realizing high luminous efficiency, they have at least two well structures. It is desirable that
  • the second-conductivity-type semiconductor layers include a first second-conductivity-type semiconductor layer 223 and a second second-conductivity-type semiconductor layer 233 .
  • a first second conductivity type semiconductor layer 223 is formed directly on the first quantum well layer 222
  • a second second conductivity type semiconductor layer 233 is formed directly on the second quantum well layer.
  • the first second-conductivity-type semiconductor layer 223 may be provided on a layer other than the second-conductivity-type semiconductor layer provided on the third first-conductivity-type semiconductor layer 231 .
  • a graded composition layer (not shown) in which the ratio of constituent elements changes continuously or discretely is provided on the first quantum well layer 222, and a first second conductive layer is provided on the graded composition layer.
  • a mold semiconductor layer 223 may be provided.
  • the second second-conductivity-type semiconductor layer 233 may be provided on a composition gradient layer or the like provided on the second quantum well layer 232 .
  • a barrier layer having a relatively large bandgap may be further provided between the graded composition layer and the first second-conductivity-type semiconductor layer 223 or the second second-conductivity-type semiconductor layer 233 .
  • the proportion of Al element in the constituent elements of the uppermost surfaces of the first second-conductivity-type semiconductor layer 223 and the second second-conductivity-type semiconductor layer 233 increases, the chemical reaction with oxygen and water vapor in the air is promoted. , deterioration is more likely to occur. Therefore, in order to realize a long-life ultraviolet light emitting device 1, the proportion of Al in the constituent elements of the uppermost surfaces of the first second-conductivity-type semiconductor layer 223 and the second second-conductivity-type semiconductor layer 233 is low. is preferred.
  • the first second-conductivity-type semiconductor layer 223 and the second second-conductivity-type semiconductor layer 233 are preferably made of Al y Ga 1-y N (y ⁇ 0.2). .
  • the first electrode 30 and the second electrode 40 are provided to supply electric power to the ultraviolet light emitting element 1 .
  • the first electrode 30 is formed on the upper surface of the first semiconductor layer 21 of the first conductivity type
  • the second electrode 40 is formed on the upper surface of the first semiconductor layer 223 of the light emitting mesa structure 22 of the second conductivity type.
  • Each electrode is formed of a conductive material such as gold, nickel, aluminum, titanium and combinations thereof.
  • Each electrode is, for example, an alloy layer of Ni and Au (typically used for p-type contacts) or a stacked layer of Ti, Al, Ni and Au (typically used for n-type contacts). ).
  • Such electrodes are formed, for example, by sputtering or vapor deposition.
  • Each electrode may also include a UV (ultraviolet) reflector.
  • a UV reflector is a structure for redirecting emitted photons towards an electrode so that they cannot escape from the semiconductor layer structure. UV reflectors are also designed to improve the extraction efficiency of photons generated in the active region of the device by redirecting the photons towards the desired emitting surface, eg, the bottom surface.
  • the insulating layer 50 partially or entirely covers the upper surface of the protective mesa structure 23 . Moreover, the insulating layer 50 covers at least a portion of the first semiconductor layer 21 of the first conductivity type.
  • the insulating layer 50 of this embodiment includes a portion of the upper surface of the protective mesa structure 23 and a portion of the first first conductivity type semiconductor layer 21 (the light emitting mesa structure 22, the protective mesa structure 23, area where none of the 1 electrodes 30 are arranged). If the region where the insulating layer 50 covers the upper surface of the protective mesa structure 23 and a part of the first first conductivity type semiconductor layer 21 is widened, the region where the semiconductor layer comes into contact with air or water vapor can be reduced. A UV light emitting element 1 with a long life can be realized.
  • the method for forming the insulating layer 50 is not particularly limited, it can be formed by, for example, a plasma CVD (Chemical Vapor Deposition) device, a sputtering device, a vacuum deposition device, or the like.
  • a silicon nitride film is formed as the insulating layer 50 using a plasma CVD apparatus, a widely known method is to use monosilane (SiH 4 ) as a supply gas for silicon, which is a constituent element, and ammonia (NH 3 ) as a supply gas for nitrogen.
  • the film thickness of the insulating layer 50 is preferably 10 nm or more and 1000 nm or less, more preferably 50 nm or more and 500 nm or less. Further, from the viewpoint of further improving waterproofness and suppressing peeling of the insulating layer 50, another insulating layer, a metal layer, or the like may be arranged on the insulating layer 50.
  • FIG. 10 is preferably 10 nm or more and 1000 nm or less, more preferably 50 nm or more and 500 nm or less.
  • another insulating layer, a metal layer, or the like may be arranged on the insulating layer 50.
  • the ultraviolet light emitting element described above has the following effects.
  • the ultraviolet light emitting element has a light emitting mesa structure and a protective mesa structure spatially separated from the light emitting mesa structure as nitride semiconductor laminates arranged on a substrate.
  • the protective mesa structure surrounds the light emitting mesa structure and the first electrode in a plan view. As a result, it is possible to suppress the progress of oxidation and deterioration of the semiconductor, including the electrode, which progresses from the chip end, and to realize a further extension of the life of the ultraviolet light emitting element.
  • the protective mesa structure is formed so that the end of the protective mesa structure partially overlaps the end of the substrate in plan view.
  • the protection mesa structure portion can cover the outer peripheral portion of the chip, and the life of the ultraviolet light emitting element can be further extended.
  • the first semiconductor layer of the first conductivity type, the second semiconductor layer of the first conductivity type, and the third semiconductor layer of the first conductivity type are composed of Al x Ga 1-x N (x>0 .3). This improves the luminous efficiency of the ultraviolet light emitting element.
  • the upper surfaces of the first second-conductivity-type semiconductor layer and the second second-conductivity-type semiconductor layer are made of Al y Ga 1-y N (y ⁇ 0.2). is preferred.
  • the ratio of the Al element to the constituent elements of the uppermost surface of the semiconductor layer is small, and chemical reactions with oxygen and water vapor in the air are less likely to occur. be able to.
  • the ultraviolet light emitting element preferably has an insulating layer covering part or all of the upper surface of the protective mesa structure. As a result, the area of the semiconductor layer in contact with air or water vapor can be reduced, so that the life of the ultraviolet light emitting device can be extended.
  • the ultraviolet light emitting device it is preferable that at least part of the first semiconductor layer of the first conductivity type is covered with an insulating layer. As a result, the area of the semiconductor layer in contact with air or water vapor can be reduced, so that the life of the ultraviolet light emitting device can be extended.
  • the insulating layer is preferably made of silicon oxide or silicon nitride. This improves the waterproofness of the ultraviolet light emitting element.
  • the ultraviolet light emitting device according to the present disclosure is not limited to the examples shown below.
  • the ultraviolet light emitting element of Example 1 is an ultraviolet light emitting element having the structure described in the embodiment, and has the following configuration.
  • the substrate is an AlN substrate.
  • the first first conductivity type semiconductor layer is n-type Al 0.7 Ga 0.3 N (n-Al 0.7 Ga 0.3 N) containing 2.0 ⁇ 10 20 cm ⁇ 3 of Si as an impurity. layer, and the thickness of the first first conductivity type semiconductor layer is 400 nm.
  • the light-emitting mesa structure is composed of a second semiconductor layer of the first conductivity type with a thickness of 150 nm, a first quantum well layer with a thickness of 70 nm, and a first semiconductor layer of the second conductivity type with a thickness of 10 nm.
  • the protective mesa structure portion is composed of a third semiconductor layer of the first conductivity type with a thickness of 150 nm, a second quantum well layer with a thickness of 70 nm, and a second semiconductor layer of the second conductivity type with a thickness of 10 nm. It is configured.
  • the second first-conductivity-type semiconductor layer and the third first-conductivity-type semiconductor layer are formed of n-Al 0.7 Ga 0.3 N layers containing 2.0 ⁇ 10 20 cm ⁇ 3 of Si as impurities. ing.
  • the first quantum well layer and the second quantum well layer are composed of Al 0.51 Ga 0.49 N (well layer) with a thickness of 3 nm and Al 0.78 Ga 0.78 Ga 0.49 N (well layer) with a thickness of 11 nm containing Si as an impurity . 22 N (barrier layers) are alternately laminated in five layers.
  • the first second-conductivity-type semiconductor layer and the second second-conductivity-type semiconductor layer are formed of a p-type GaN (p-GaN) layer containing 2.0 ⁇ 10 20 cm ⁇ 3 of Mg as an impurity. .
  • the first electrode is a layer in which Ti, Al, Ni and Au are laminated in order.
  • the second electrode is a layer in which Ni and Au are laminated in order.
  • the insulating layer is a silicon nitride layer with a film thickness of 240 nm.
  • the ultraviolet light emitting device of Example 1 was produced by the following method. First, an n-Al 0.7 Ga 0.3 N layer containing 2.0 ⁇ 10 20 cm ⁇ 3 of Si as an impurity was formed with a thickness of 550 nm on an AlN substrate made of an AlN single crystal. Next, on the n-Al 0.7 Ga 0.3 N layer, Al 0.51 Ga 0.49 N with a thickness of 3 nm and Al 0.78 Ga 0.22 containing Si as an impurity with a thickness of 11 nm. 5 layers each of N and N were alternately laminated to a total thickness of 70 nm.
  • a p-GaN layer containing 2.0 ⁇ 10 20 cm ⁇ 3 of Mg as an impurity was formed with a thickness of 10 nm. These layers were deposited by metal organic chemical vapor deposition (MOCVD). As described above, a laminate including nitride semiconductor layers was formed on the AlN substrate.
  • MOCVD metal organic chemical vapor deposition
  • Example 1 dry etching is performed on the laminate on the AlN substrate to remove regions other than the regions to be the light-emitting mesa structure and the protective mesa structure of the laminate to a predetermined depth, thereby forming n-Al 0.7 Ga.
  • the 0.3 N layer was partially exposed.
  • the laminate was formed in a shape in which the light-emitting mesa structure and the protection mesa structure protrude from the first first-conductivity-type semiconductor layer having a thickness of 400 nm.
  • This dry etching was performed using a chlorine-based gas after forming a resist pattern on the laminate by photolithography.
  • the chip of Example 1 had a square shape with a chip size of 855 ⁇ m on each side, and a protective mesa structure was formed in a region extending from the outer circumference of the chip to the inner side of 20 ⁇ m.
  • Ti, Al, Ni, and Au were sequentially formed on a portion of the exposed first semiconductor layer of the first conductivity type using an electron beam evaporation method to form a first contact electrode.
  • Ni and Au were sequentially formed on a portion of the first second conductivity type semiconductor layer of the light-emitting mesa structure portion by using the electron beam vapor deposition method to form a second contact electrode.
  • silicon nitride having a thickness of 240 nm is applied so as to cover the entire AlN substrate (the entire upper surface and side surfaces) on which the light-emitting mesa structure, the protective mesa structure, the first contact electrode, and the second contact electrode are formed. was formed by the plasma CVD method.
  • contact holes were formed at predetermined positions of the silicon nitride (part of the upper surface of the first contact electrode and part of the upper surface of the second contact electrode) by etching with CF4. .
  • Ti was deposited to a thickness of 20 nm and Au to a thickness of 1000 nm in this order in each of the formed contact holes to form a first pad electrode and a second pad electrode.
  • a first electrode made up of the first contact electrode and the first pad electrode and a second electrode made up of the second contact electrode and the second pad electrode were formed. Note that the steps up to this point were performed in a wafer state. Finally, this wafer was separated into individual pieces by laser dicing, and the submounts were flip-chip mounted by the GGI (Gold to Gold Interconnection) method and packaged.
  • GGI Gold to Gold Interconnection
  • a continuous current test (250 mA) was performed in an environment of 55°C and 85% RH in order to confirm the presence or absence of deterioration in a high humidity environment for the obtained ultraviolet light emitting device of Example 1.
  • the drive voltage of the device was measured after the continuous energization test for 2000 hours, and the fluctuation rate of the drive voltage ((drive voltage after test)-(drive voltage before test)/drive voltage before test) was evaluated. , the rate of variation was 0%.
  • the drive voltage did not fluctuate, and no deterioration in appearance was observed inside the protective mesa structure. That is, a long-life ultraviolet light-emitting device was obtained without increasing the resistance of the light-emitting mesa structure.

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JPH11354845A (ja) * 1998-06-10 1999-12-24 Matsushita Electron Corp ＧａＮ系化合物半導体発光素子
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