JPWO2022190275A5 - - Google Patents
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- Publication number
- JPWO2022190275A5 JPWO2022190275A5 JP2023504977A JP2023504977A JPWO2022190275A5 JP WO2022190275 A5 JPWO2022190275 A5 JP WO2022190275A5 JP 2023504977 A JP2023504977 A JP 2023504977A JP 2023504977 A JP2023504977 A JP 2023504977A JP WO2022190275 A5 JPWO2022190275 A5 JP WO2022190275A5
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- JP
- Japan
- Prior art keywords
- conductivity type
- region
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- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005253 cladding Methods 0.000 claims 26
- 238000002347 injection Methods 0.000 claims 18
- 239000007924 injection Substances 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 4
- 230000010355 oscillation Effects 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/009586 WO2022190275A1 (ja) | 2021-03-10 | 2021-03-10 | 半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022190275A1 JPWO2022190275A1 (https=) | 2022-09-15 |
| JPWO2022190275A5 true JPWO2022190275A5 (https=) | 2023-11-17 |
| JP7511743B2 JP7511743B2 (ja) | 2024-07-05 |
Family
ID=83227633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023504977A Active JP7511743B2 (ja) | 2021-03-10 | 2021-03-10 | 半導体レーザ装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240088626A1 (https=) |
| JP (1) | JP7511743B2 (https=) |
| CN (1) | CN116897480A (https=) |
| WO (1) | WO2022190275A1 (https=) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2889626B2 (ja) * | 1989-12-26 | 1999-05-10 | 三洋電機株式会社 | 半導体レーザ |
| JP4402775B2 (ja) * | 1999-09-20 | 2010-01-20 | 三菱電機株式会社 | 半導体レーザダイオード |
| JP2003209321A (ja) * | 2002-01-15 | 2003-07-25 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法 |
| JP4656398B2 (ja) * | 2005-04-07 | 2011-03-23 | ソニー株式会社 | ブロードエリア型半導体レーザ素子 |
| US7602828B2 (en) | 2006-11-13 | 2009-10-13 | Jds Uniphase Corporation | Semiconductor laser diode with narrow lateral beam divergence |
| US8750343B2 (en) * | 2007-09-28 | 2014-06-10 | Future Light, Llc | Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer |
| JP2009088425A (ja) * | 2007-10-03 | 2009-04-23 | Sony Corp | 半導体レーザおよびその製造方法 |
| JP2009224480A (ja) * | 2008-03-14 | 2009-10-01 | Panasonic Corp | 2波長半導体レーザ装置 |
| JP2010135724A (ja) * | 2008-10-27 | 2010-06-17 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP6024365B2 (ja) * | 2012-10-09 | 2016-11-16 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP6447456B2 (ja) * | 2015-10-22 | 2019-01-09 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP6753236B2 (ja) * | 2016-09-13 | 2020-09-09 | 三菱電機株式会社 | ブロードエリア半導体レーザ素子 |
| CN111095700B (zh) * | 2017-09-14 | 2021-12-14 | 三菱电机株式会社 | 半导体激光装置 |
-
2021
- 2021-03-10 CN CN202180095168.3A patent/CN116897480A/zh active Pending
- 2021-03-10 US US18/262,901 patent/US20240088626A1/en active Pending
- 2021-03-10 JP JP2023504977A patent/JP7511743B2/ja active Active
- 2021-03-10 WO PCT/JP2021/009586 patent/WO2022190275A1/ja not_active Ceased
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