JPWO2022106956A1 - - Google Patents
Info
- Publication number
- JPWO2022106956A1 JPWO2022106956A1 JP2022563256A JP2022563256A JPWO2022106956A1 JP WO2022106956 A1 JPWO2022106956 A1 JP WO2022106956A1 JP 2022563256 A JP2022563256 A JP 2022563256A JP 2022563256 A JP2022563256 A JP 2022563256A JP WO2022106956 A1 JPWO2022106956 A1 JP WO2022106956A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020193215 | 2020-11-20 | ||
| PCT/IB2021/060338 WO2022106956A1 (ja) | 2020-11-20 | 2021-11-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022106956A1 true JPWO2022106956A1 (enExample) | 2022-05-27 |
| JPWO2022106956A5 JPWO2022106956A5 (enExample) | 2024-11-15 |
Family
ID=81708448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022563256A Pending JPWO2022106956A1 (enExample) | 2020-11-20 | 2021-11-09 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240013829A1 (enExample) |
| JP (1) | JPWO2022106956A1 (enExample) |
| CN (1) | CN116457934A (enExample) |
| WO (1) | WO2022106956A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230268355A1 (en) * | 2022-02-23 | 2023-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device and method for fabricating the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168294A (ja) * | 1999-12-09 | 2001-06-22 | Seiko Epson Corp | メモリデバイス及びその製造方法、並びに電子機器 |
| JP2002197857A (ja) * | 2000-05-26 | 2002-07-12 | Sony Corp | 強誘電体型不揮発性半導体メモリ及びその駆動方法 |
| JP2004362753A (ja) * | 2003-06-03 | 2004-12-24 | Hitachi Global Storage Technologies Netherlands Bv | 超低コストの固体メモリ |
| JP2010140919A (ja) * | 2008-12-09 | 2010-06-24 | Hitachi Ltd | 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523964A (en) * | 1994-04-07 | 1996-06-04 | Symetrix Corporation | Ferroelectric non-volatile memory unit |
| US6566698B2 (en) * | 2000-05-26 | 2003-05-20 | Sony Corporation | Ferroelectric-type nonvolatile semiconductor memory and operation method thereof |
| EP1187140A3 (en) * | 2000-09-05 | 2002-09-11 | Matsushita Electric Industrial Co., Ltd. | Method for driving semiconductor memory |
| US6773929B2 (en) * | 2001-09-14 | 2004-08-10 | Hynix Semiconductor Inc. | Ferroelectric memory device and method for manufacturing the same |
| JP2003229541A (ja) * | 2002-01-31 | 2003-08-15 | Sony Corp | 半導体記憶装置及びその製造方法 |
| JP4132936B2 (ja) * | 2002-04-16 | 2008-08-13 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2007013011A (ja) * | 2005-07-01 | 2007-01-18 | Seiko Epson Corp | 強誘電体メモリ装置及び表示用駆動ｉｃ |
| JP2007266494A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | 半導体記憶装置 |
| JP2008071897A (ja) * | 2006-09-13 | 2008-03-27 | Toshiba Corp | 半導体メモリ及び半導体メモリの製造方法 |
| JP4901515B2 (ja) * | 2007-02-07 | 2012-03-21 | 株式会社東芝 | 強誘電体半導体記憶装置 |
| JP2009116940A (ja) * | 2007-11-05 | 2009-05-28 | Toshiba Corp | 半導体記憶装置 |
| JP4660564B2 (ja) * | 2008-03-11 | 2011-03-30 | 株式会社東芝 | 半導体記憶装置 |
| JP2010044844A (ja) * | 2008-08-18 | 2010-02-25 | Toshiba Corp | 半導体記憶装置 |
| JP2011029258A (ja) * | 2009-07-22 | 2011-02-10 | Toshiba Corp | 半導体記憶装置 |
| JP2011066062A (ja) * | 2009-09-15 | 2011-03-31 | Toshiba Corp | 半導体記憶装置 |
| US12154817B1 (en) * | 2010-11-18 | 2024-11-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US10229874B1 (en) * | 2018-03-22 | 2019-03-12 | Micron Technology, Inc. | Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays |
| US10546629B1 (en) * | 2018-10-10 | 2020-01-28 | Micron Technology, Inc. | Memory cell sensing based on precharging an access line using a sense amplifier |
| US10916548B1 (en) * | 2019-07-25 | 2021-02-09 | Micron Technology, Inc. | Memory arrays with vertical access transistors |
| US20240284710A1 (en) * | 2022-06-21 | 2024-08-22 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel and display apparatus |
| US20240371854A1 (en) * | 2023-01-18 | 2024-11-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device and method of manufacturing |
-
2021
- 2021-11-09 US US18/035,013 patent/US20240013829A1/en active Pending
- 2021-11-09 WO PCT/IB2021/060338 patent/WO2022106956A1/ja not_active Ceased
- 2021-11-09 CN CN202180077758.3A patent/CN116457934A/zh active Pending
- 2021-11-09 JP JP2022563256A patent/JPWO2022106956A1/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168294A (ja) * | 1999-12-09 | 2001-06-22 | Seiko Epson Corp | メモリデバイス及びその製造方法、並びに電子機器 |
| JP2002197857A (ja) * | 2000-05-26 | 2002-07-12 | Sony Corp | 強誘電体型不揮発性半導体メモリ及びその駆動方法 |
| JP2004362753A (ja) * | 2003-06-03 | 2004-12-24 | Hitachi Global Storage Technologies Netherlands Bv | 超低コストの固体メモリ |
| JP2010140919A (ja) * | 2008-12-09 | 2010-06-24 | Hitachi Ltd | 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022106956A1 (ja) | 2022-05-27 |
| US20240013829A1 (en) | 2024-01-11 |
| CN116457934A (zh) | 2023-07-18 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241107 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20241107 |
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| A131 | Notification of reasons for refusal |
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| A521 | Request for written amendment filed |
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