JPWO2022106956A5 - - Google Patents
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- Publication number
- JPWO2022106956A5 JPWO2022106956A5 JP2022563256A JP2022563256A JPWO2022106956A5 JP WO2022106956 A5 JPWO2022106956 A5 JP WO2022106956A5 JP 2022563256 A JP2022563256 A JP 2022563256A JP 2022563256 A JP2022563256 A JP 2022563256A JP WO2022106956 A5 JPWO2022106956 A5 JP WO2022106956A5
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- transistor
- electrically connected
- semiconductor device
- capacitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020193215 | 2020-11-20 | ||
| PCT/IB2021/060338 WO2022106956A1 (ja) | 2020-11-20 | 2021-11-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022106956A1 JPWO2022106956A1 (enExample) | 2022-05-27 |
| JPWO2022106956A5 true JPWO2022106956A5 (enExample) | 2024-11-15 |
Family
ID=81708448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022563256A Pending JPWO2022106956A1 (enExample) | 2020-11-20 | 2021-11-09 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240013829A1 (enExample) |
| JP (1) | JPWO2022106956A1 (enExample) |
| CN (1) | CN116457934A (enExample) |
| WO (1) | WO2022106956A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230268355A1 (en) * | 2022-02-23 | 2023-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device and method for fabricating the same |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523964A (en) * | 1994-04-07 | 1996-06-04 | Symetrix Corporation | Ferroelectric non-volatile memory unit |
| JP3620041B2 (ja) * | 1999-12-09 | 2005-02-16 | セイコーエプソン株式会社 | メモリデバイス及びその製造方法、並びに電子機器 |
| JP4670177B2 (ja) * | 2000-05-26 | 2011-04-13 | ソニー株式会社 | 強誘電体型不揮発性半導体メモリ及びその駆動方法 |
| US6566698B2 (en) * | 2000-05-26 | 2003-05-20 | Sony Corporation | Ferroelectric-type nonvolatile semiconductor memory and operation method thereof |
| EP1187140A3 (en) * | 2000-09-05 | 2002-09-11 | Matsushita Electric Industrial Co., Ltd. | Method for driving semiconductor memory |
| US6773929B2 (en) * | 2001-09-14 | 2004-08-10 | Hynix Semiconductor Inc. | Ferroelectric memory device and method for manufacturing the same |
| JP2003229541A (ja) * | 2002-01-31 | 2003-08-15 | Sony Corp | 半導体記憶装置及びその製造方法 |
| JP4132936B2 (ja) * | 2002-04-16 | 2008-08-13 | 富士通株式会社 | 半導体装置の製造方法 |
| US7291878B2 (en) * | 2003-06-03 | 2007-11-06 | Hitachi Global Storage Technologies Netherlands B.V. | Ultra low-cost solid-state memory |
| JP2007013011A (ja) * | 2005-07-01 | 2007-01-18 | Seiko Epson Corp | 強誘電体メモリ装置及び表示用駆動ｉｃ |
| JP2007266494A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | 半導体記憶装置 |
| JP2008071897A (ja) * | 2006-09-13 | 2008-03-27 | Toshiba Corp | 半導体メモリ及び半導体メモリの製造方法 |
| JP4901515B2 (ja) * | 2007-02-07 | 2012-03-21 | 株式会社東芝 | 強誘電体半導体記憶装置 |
| JP2009116940A (ja) * | 2007-11-05 | 2009-05-28 | Toshiba Corp | 半導体記憶装置 |
| JP4660564B2 (ja) * | 2008-03-11 | 2011-03-30 | 株式会社東芝 | 半導体記憶装置 |
| JP2010044844A (ja) * | 2008-08-18 | 2010-02-25 | Toshiba Corp | 半導体記憶装置 |
| JP2010140919A (ja) * | 2008-12-09 | 2010-06-24 | Hitachi Ltd | 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板 |
| JP2011029258A (ja) * | 2009-07-22 | 2011-02-10 | Toshiba Corp | 半導体記憶装置 |
| JP2011066062A (ja) * | 2009-09-15 | 2011-03-31 | Toshiba Corp | 半導体記憶装置 |
| US12154817B1 (en) * | 2010-11-18 | 2024-11-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US10229874B1 (en) * | 2018-03-22 | 2019-03-12 | Micron Technology, Inc. | Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays |
| US10546629B1 (en) * | 2018-10-10 | 2020-01-28 | Micron Technology, Inc. | Memory cell sensing based on precharging an access line using a sense amplifier |
| US10916548B1 (en) * | 2019-07-25 | 2021-02-09 | Micron Technology, Inc. | Memory arrays with vertical access transistors |
| US20240284710A1 (en) * | 2022-06-21 | 2024-08-22 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel and display apparatus |
| US20240371854A1 (en) * | 2023-01-18 | 2024-11-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device and method of manufacturing |
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2021
- 2021-11-09 US US18/035,013 patent/US20240013829A1/en active Pending
- 2021-11-09 WO PCT/IB2021/060338 patent/WO2022106956A1/ja not_active Ceased
- 2021-11-09 CN CN202180077758.3A patent/CN116457934A/zh active Pending
- 2021-11-09 JP JP2022563256A patent/JPWO2022106956A1/ja active Pending