JPWO2022102128A1 - - Google Patents

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Publication number
JPWO2022102128A1
JPWO2022102128A1 JP2022527239A JP2022527239A JPWO2022102128A1 JP WO2022102128 A1 JPWO2022102128 A1 JP WO2022102128A1 JP 2022527239 A JP2022527239 A JP 2022527239A JP 2022527239 A JP2022527239 A JP 2022527239A JP WO2022102128 A1 JPWO2022102128 A1 JP WO2022102128A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022527239A
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Japanese (ja)
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JP7247421B2 (ja
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Publication of JPWO2022102128A1 publication Critical patent/JPWO2022102128A1/ja
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Publication of JP7247421B2 publication Critical patent/JP7247421B2/ja
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/129Passivating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219Arrangements for electrodes of back-contact photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • H10K30/57Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/15Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/18Interconnections, e.g. terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2022527239A 2020-11-16 2020-11-16 多層接合型光電変換素子およびその製造方法 Active JP7247421B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/042625 WO2022102128A1 (ja) 2020-11-16 2020-11-16 多層接合型光電変換素子およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2022102128A1 true JPWO2022102128A1 (enrdf_load_stackoverflow) 2022-05-19
JP7247421B2 JP7247421B2 (ja) 2023-03-28

Family

ID=81602384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022527239A Active JP7247421B2 (ja) 2020-11-16 2020-11-16 多層接合型光電変換素子およびその製造方法

Country Status (5)

Country Link
US (1) US20230307560A1 (enrdf_load_stackoverflow)
JP (1) JP7247421B2 (enrdf_load_stackoverflow)
CN (1) CN114830365B (enrdf_load_stackoverflow)
DE (1) DE112020007777T5 (enrdf_load_stackoverflow)
WO (1) WO2022102128A1 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114821B1 (ja) 2022-03-18 2022-08-08 株式会社東芝 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法
CN117279408B (zh) 2023-11-15 2024-02-27 天合光能股份有限公司 叠层电池及其制备方法
CN117317041A (zh) * 2023-11-29 2023-12-29 浙江晶科能源有限公司 太阳能电池及光伏组件
JP7631573B1 (ja) 2024-01-30 2025-02-18 株式会社東芝 太陽電池モジュールおよび太陽電池モジュールの製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010087312A1 (ja) * 2009-01-28 2010-08-05 三菱電機株式会社 薄膜光電変換装置およびその製造方法
JP2011014894A (ja) * 2009-06-05 2011-01-20 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の作製方法
WO2011077963A1 (ja) * 2009-12-25 2011-06-30 三菱電機株式会社 太陽電池およびその製造方法
JP2013106025A (ja) * 2011-11-14 2013-05-30 Ren Solation Co Ltd 光電変換素子
WO2017195722A1 (ja) * 2016-05-09 2017-11-16 株式会社カネカ 積層型光電変換装置およびその製造方法
JP2018093168A (ja) * 2016-12-02 2018-06-14 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池及びその製造方法
JP2019009402A (ja) * 2017-06-28 2019-01-17 国立研究開発法人物質・材料研究機構 太陽電池およびその製造方法
JP2019036598A (ja) * 2017-08-10 2019-03-07 株式会社東芝 半導体素子およびその製造方法
KR20190053374A (ko) * 2017-11-10 2019-05-20 엘지전자 주식회사 탠덤 태양전지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010272651A (ja) * 2009-05-20 2010-12-02 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
US8426236B2 (en) * 2010-05-07 2013-04-23 International Business Machines Corporation Method and structure of photovoltaic grid stacks by solution based processes
KR101149891B1 (ko) * 2011-12-09 2012-06-11 한화케미칼 주식회사 태양전지 및 이의 제조방법
CN106058054A (zh) * 2016-07-13 2016-10-26 苏州协鑫集成科技工业应用研究院有限公司 叠层太阳能电池及其制备方法
GB2566293A (en) * 2017-09-07 2019-03-13 Oxford Photovoltaics Ltd Multi-junction photovoltaic device
CN109786423B (zh) * 2019-01-09 2021-09-21 无锡极电光能科技有限公司 钙钛矿/硅叠层太阳能电池及其制备方法和应用
CN210156403U (zh) * 2019-06-29 2020-03-17 深圳黑晶光电科技有限公司 一种串联型钙钛矿/同质结硅叠层太阳能电池
CN110867516A (zh) * 2019-11-16 2020-03-06 东方日升(常州)新能源有限公司 新型基于钙钛矿和晶硅背钝化叠层太阳电池及其制造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010087312A1 (ja) * 2009-01-28 2010-08-05 三菱電機株式会社 薄膜光電変換装置およびその製造方法
JP2011014894A (ja) * 2009-06-05 2011-01-20 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の作製方法
WO2011077963A1 (ja) * 2009-12-25 2011-06-30 三菱電機株式会社 太陽電池およびその製造方法
JP2013106025A (ja) * 2011-11-14 2013-05-30 Ren Solation Co Ltd 光電変換素子
WO2017195722A1 (ja) * 2016-05-09 2017-11-16 株式会社カネカ 積層型光電変換装置およびその製造方法
JP2018093168A (ja) * 2016-12-02 2018-06-14 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池及びその製造方法
JP2019195111A (ja) * 2016-12-02 2019-11-07 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池及びその製造方法
JP2019009402A (ja) * 2017-06-28 2019-01-17 国立研究開発法人物質・材料研究機構 太陽電池およびその製造方法
JP2019036598A (ja) * 2017-08-10 2019-03-07 株式会社東芝 半導体素子およびその製造方法
KR20190053374A (ko) * 2017-11-10 2019-05-20 엘지전자 주식회사 탠덤 태양전지

Also Published As

Publication number Publication date
JP7247421B2 (ja) 2023-03-28
DE112020007777T5 (de) 2023-09-21
CN114830365B (zh) 2023-11-28
WO2022102128A1 (ja) 2022-05-19
CN114830365A (zh) 2022-07-29
US20230307560A1 (en) 2023-09-28

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