JPWO2022102128A1 - - Google Patents
Info
- Publication number
- JPWO2022102128A1 JPWO2022102128A1 JP2022527239A JP2022527239A JPWO2022102128A1 JP WO2022102128 A1 JPWO2022102128 A1 JP WO2022102128A1 JP 2022527239 A JP2022527239 A JP 2022527239A JP 2022527239 A JP2022527239 A JP 2022527239A JP WO2022102128 A1 JPWO2022102128 A1 JP WO2022102128A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/15—Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/18—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/042625 WO2022102128A1 (ja) | 2020-11-16 | 2020-11-16 | 多層接合型光電変換素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022102128A1 true JPWO2022102128A1 (ja) | 2022-05-19 |
JP7247421B2 JP7247421B2 (ja) | 2023-03-28 |
Family
ID=81602384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022527239A Active JP7247421B2 (ja) | 2020-11-16 | 2020-11-16 | 多層接合型光電変換素子およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230307560A1 (ja) |
JP (1) | JP7247421B2 (ja) |
CN (1) | CN114830365B (ja) |
DE (1) | DE112020007777T5 (ja) |
WO (1) | WO2022102128A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117317041A (zh) * | 2023-11-29 | 2023-12-29 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010087312A1 (ja) * | 2009-01-28 | 2010-08-05 | 三菱電機株式会社 | 薄膜光電変換装置およびその製造方法 |
JP2011014894A (ja) * | 2009-06-05 | 2011-01-20 | Semiconductor Energy Lab Co Ltd | 光電変換装置および光電変換装置の作製方法 |
WO2011077963A1 (ja) * | 2009-12-25 | 2011-06-30 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
JP2013106025A (ja) * | 2011-11-14 | 2013-05-30 | Ren Solation Co Ltd | 光電変換素子 |
WO2017195722A1 (ja) * | 2016-05-09 | 2017-11-16 | 株式会社カネカ | 積層型光電変換装置およびその製造方法 |
JP2018093168A (ja) * | 2016-12-02 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | タンデム太陽電池及びその製造方法 |
JP2019009402A (ja) * | 2017-06-28 | 2019-01-17 | 国立研究開発法人物質・材料研究機構 | 太陽電池およびその製造方法 |
JP2019036598A (ja) * | 2017-08-10 | 2019-03-07 | 株式会社東芝 | 半導体素子およびその製造方法 |
KR20190053374A (ko) * | 2017-11-10 | 2019-05-20 | 엘지전자 주식회사 | 탠덤 태양전지 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010272651A (ja) * | 2009-05-20 | 2010-12-02 | Mitsubishi Electric Corp | 薄膜太陽電池およびその製造方法 |
CN106058054A (zh) * | 2016-07-13 | 2016-10-26 | 苏州协鑫集成科技工业应用研究院有限公司 | 叠层太阳能电池及其制备方法 |
CN109786423B (zh) * | 2019-01-09 | 2021-09-21 | 无锡极电光能科技有限公司 | 钙钛矿/硅叠层太阳能电池及其制备方法和应用 |
CN210156403U (zh) * | 2019-06-29 | 2020-03-17 | 深圳黑晶光电科技有限公司 | 一种串联型钙钛矿/同质结硅叠层太阳能电池 |
CN110867516A (zh) * | 2019-11-16 | 2020-03-06 | 东方日升(常州)新能源有限公司 | 新型基于钙钛矿和晶硅背钝化叠层太阳电池及其制造方法 |
-
2020
- 2020-11-16 JP JP2022527239A patent/JP7247421B2/ja active Active
- 2020-11-16 CN CN202080006271.1A patent/CN114830365B/zh active Active
- 2020-11-16 DE DE112020007777.2T patent/DE112020007777T5/de active Pending
- 2020-11-16 WO PCT/JP2020/042625 patent/WO2022102128A1/ja active Application Filing
-
2023
- 2023-05-15 US US18/317,466 patent/US20230307560A1/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010087312A1 (ja) * | 2009-01-28 | 2010-08-05 | 三菱電機株式会社 | 薄膜光電変換装置およびその製造方法 |
JP2011014894A (ja) * | 2009-06-05 | 2011-01-20 | Semiconductor Energy Lab Co Ltd | 光電変換装置および光電変換装置の作製方法 |
WO2011077963A1 (ja) * | 2009-12-25 | 2011-06-30 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
JP2013106025A (ja) * | 2011-11-14 | 2013-05-30 | Ren Solation Co Ltd | 光電変換素子 |
WO2017195722A1 (ja) * | 2016-05-09 | 2017-11-16 | 株式会社カネカ | 積層型光電変換装置およびその製造方法 |
JP2018093168A (ja) * | 2016-12-02 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | タンデム太陽電池及びその製造方法 |
JP2019195111A (ja) * | 2016-12-02 | 2019-11-07 | エルジー エレクトロニクス インコーポレイティド | タンデム太陽電池及びその製造方法 |
JP2019009402A (ja) * | 2017-06-28 | 2019-01-17 | 国立研究開発法人物質・材料研究機構 | 太陽電池およびその製造方法 |
JP2019036598A (ja) * | 2017-08-10 | 2019-03-07 | 株式会社東芝 | 半導体素子およびその製造方法 |
KR20190053374A (ko) * | 2017-11-10 | 2019-05-20 | 엘지전자 주식회사 | 탠덤 태양전지 |
Also Published As
Publication number | Publication date |
---|---|
US20230307560A1 (en) | 2023-09-28 |
JP7247421B2 (ja) | 2023-03-28 |
WO2022102128A1 (ja) | 2022-05-19 |
CN114830365A (zh) | 2022-07-29 |
DE112020007777T5 (de) | 2023-09-21 |
CN114830365B (zh) | 2023-11-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220530 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20220530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220715 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220909 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230214 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230315 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7247421 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |