JP2019195111A - タンデム太陽電池及びその製造方法 - Google Patents
タンデム太陽電池及びその製造方法 Download PDFInfo
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- JP2019195111A JP2019195111A JP2019149055A JP2019149055A JP2019195111A JP 2019195111 A JP2019195111 A JP 2019195111A JP 2019149055 A JP2019149055 A JP 2019149055A JP 2019149055 A JP2019149055 A JP 2019149055A JP 2019195111 A JP2019195111 A JP 2019195111A
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- Prior art keywords
- solar cell
- layer
- electrode
- perovskite
- tandem solar
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
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- 239000002041 carbon nanotube Substances 0.000 description 1
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
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- H01L31/0236—Special surface textures
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- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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Abstract
Description
第1実施例
図2は、本発明の第1実施例によるタンデム太陽電池を示した断面図であり、図3は、図2のペロブスカイト太陽電池を詳細に示した断面図である。
図4は、本発明の第2実施例によるタンデム太陽電池を示した断面図である。
図7ないし図12は、本発明の第1実施例によるタンデム太陽電池の製造方法を示した工程断面図である。
110 シリコン太陽電池
111 結晶シリコン基板
112 エミッタ層
113 後面電界層
114 第1のパッシベーションパターン
115 第1のパッシベーション層
120 ペロブスカイト太陽電池
121 電子伝達層
122 ペロブスカイト吸収層
123 正孔伝達層
125 メソポーラス層
130 接合層
140 電極
142 透明電極層
144 グリッド電極層
150 電極
160 第2のパッシベーション層
200 タンデム太陽電池
210 シリコン太陽電池
211 結晶シリコン基板
213 後面電界層
220 ペロブスカイト太陽電池
230 接合層
240 電極
242 透明電極層
244 グリッド電極層
250 電極
252 グリッド電極層
G 開口部
Claims (19)
- 結晶シリコン基板の第1面に配置されたエミッタ層と、
前記エミッタ層上に配置されて、前記エミッタ層の一部が露出する開口部を有するようにパターニングされた第1のパッシベーションパターンを有するシリコン太陽電池と、
ペロブスカイト吸収層を有するペロブスカイト太陽電池と、
前記シリコン太陽電池の第1のパッシベーションパターン上及び前記開口部を通じて露出する前記エミッタ層上に配置され、前記エミッタ層の一部と接触し、前記シリコン太陽電池と前記ペロブスカイト太陽電池とを接合する接合層と、
前記ペロブスカイト太陽電池上に配置された第1電極と、
前記結晶シリコン基板の第2面に配置された第2電極と、を有する、タンデム太陽電池。 - 前記結晶シリコン太陽電池は、
前記結晶シリコン基板の第2面に配置された後面電界層をさらに有する、請求項1に記載のタンデム太陽電池。 - 前記ペロブスカイト太陽電池は、
電子伝達層及び正孔伝達層をさらに有する、請求項1に記載のタンデム太陽電池。 - 前記第1電極は、
前記ペロブスカイト太陽電池上に配置された透明電極層と、
前記透明電極層上に配置されたグリッド電極層と、を有する、請求項1に記載のタンデム太陽電池。 - 前記透明電極層は、
凹凸構造を有する、請求項4に記載のタンデム太陽電池。 - 前記結晶シリコン基板の第2面に配置された第2のパッシベーション層をさらに有する、請求項2に記載のタンデム太陽電池。
- 前記第2電極は、前記第2のパッシベーション層を貫通して前記後面電界層と電気的に連結される、請求項6に記載のタンデム太陽電池。
- 前記第1のパッシベーションパターンは、10〜100nmの厚さを有する、請求項1に記載のタンデム太陽電池。
- 前記第2電極は、ガラスフリット及び焼成貫通用無機添加物を有し、
前記第1電極は、ガラスフリットを有しない、請求項1に記載のタンデム太陽電池。 - 前記結晶シリコン基板は、
第1面及び第2面のうち少なくとも一つに配置されたテクスチャリングパターンを有する、請求項1に記載のタンデム太陽電池。 - 前記ペロブスカイト太陽電池は、
前記電子伝達層とペロブスカイト吸収層との間に配置されたメソポーラス層をさらに有する、請求項3に記載のタンデム太陽電池。 - 結晶シリコン基板の第1面にエミッタ層を形成する段階と、
前記エミッタ層上に第1のパッシベーション層を形成する段階と、
前記結晶シリコン基板の第2面に第2電極を形成する段階と、
前記第1のパッシベーション層の一部をエッチングして、前記エミッタ層の一部を露出する開口部を有するようにパターニングされた第1のパッシベーションパターンを有するシリコン太陽電池を形成する段階と、
前記開口部を通じて露出するエミッタ層上及び第1のパッシベーションパターン上に接合層を形成する段階と、
前記接合層上にペロブスカイト吸収層を有するペロブスカイト太陽電池を形成する段階と、
前記ペロブスカイト太陽電池上に第1電極を形成する段階と、を有する、タンデム太陽電池の製造方法。 - 前記エミッタ層を形成する段階において、前記結晶シリコン基板の第2面に後面電界層をさらに形成し、
前記第1のパッシベーション層を形成する段階において、前記後面電界層上に第2のパッシベーション層をさらに形成する段階を有する、請求項12に記載のタンデム太陽電池の製造方法。 - 前記第2電極は、前記第2のパッシベーション層上に塗布されて、第1温度を有する熱処理により前記第2のパッシベーション層を貫通して、前記後面電界層に連結される、請求項13に記載のタンデム太陽電池の製造方法。
- 前記エミッタ層を形成する段階の前に、
前記結晶シリコン基板の第1面及び第2面を平坦化した後、前記第1面及び第2面のうち少なくとも一つをテクスチャリングして、テクスチャリングパターンを形成する段階をさらに有する、請求項12に記載のタンデム太陽電池の製造方法。 - 前記第1のパッシベーション層は、
10〜100nmの厚さに形成される、請求項12に記載のタンデム太陽電池の製造方法。 - 前記第2電極の熱処理温度は700℃以上であり、
前記第1電極の熱処理温度は250℃以下である、請求項12に記載のタンデム太陽電池の製造方法。 - 前記第2電極は、ガラスフリット及び焼成貫通用無機添加物を有する電極ペーストを用い、
前記第1電極は、ガラスフリットを有しない電極ペーストを用いる、請求項12に記載のタンデム太陽電池の製造方法。 - 前記ペロブスカイト太陽電池を形成する段階は、
前記接合層上に電子伝達層を形成する段階と、
前記電子伝達層上に前記ペロブスカイト吸収層を形成する段階と、
前記ペロブスカイト吸収層上に正孔伝達層を形成する段階と、を有する、請求項12に記載のタンデム太陽電池の製造方法。
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KR20220026705A (ko) * | 2020-08-26 | 2022-03-07 | 성균관대학교산학협력단 | 개구부를 포함하는 양면 수광형 실리콘 탠덤형 태양 전지 |
KR102483918B1 (ko) * | 2020-08-26 | 2022-12-30 | 성균관대학교산학협력단 | 개구부를 포함하는 양면 수광형 실리콘 탠덤형 태양 전지의 제조 방법 |
WO2022102128A1 (ja) * | 2020-11-16 | 2022-05-19 | 株式会社 東芝 | 多層接合型光電変換素子およびその製造方法 |
JPWO2022102128A1 (ja) * | 2020-11-16 | 2022-05-19 | ||
JP7247421B2 (ja) | 2020-11-16 | 2023-03-28 | 株式会社東芝 | 多層接合型光電変換素子およびその製造方法 |
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CN108155181B (zh) | 2021-03-12 |
US20180158976A1 (en) | 2018-06-07 |
EP3331029B1 (en) | 2021-09-01 |
CN108155181A (zh) | 2018-06-12 |
JP7005565B2 (ja) | 2022-01-21 |
EP3331029A1 (en) | 2018-06-06 |
JP2018093168A (ja) | 2018-06-14 |
US11462655B2 (en) | 2022-10-04 |
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