JP6437582B2 - 太陽電池及び太陽電池モジュール - Google Patents
太陽電池及び太陽電池モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 422
- 239000000758 substrate Substances 0.000 claims description 213
- 229910052751 metal Inorganic materials 0.000 claims description 167
- 239000002184 metal Substances 0.000 claims description 167
- 239000011888 foil Substances 0.000 claims description 146
- 239000012535 impurity Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000002161 passivation Methods 0.000 claims description 25
- 239000002210 silicon-based material Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 230000000994 depressogenic effect Effects 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 71
- 239000003566 sealing material Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
- 239000000969 carrier Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 3
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 and at the same time Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Description
Claims (20)
- 半導体基板と、
前記半導体基板の前面または後面に位置し、第1導電型の不純物がドーピングされる第1半導体部と、
前記第1半導体部に接続される第1電極と、
前記半導体基板の後面に接続される第2電極とを含み、
前記第2電極は、前記半導体基板の後面に接続されるコンタクト部と、前記半導体基板の後面から離隔され前記半導体基板との間にエアギャップを形成する非コンタクト部を含む金属箔で形成され、
前記金属箔に形成された第2電極の前記コンタクト部は、前記非コンタクト部より前記半導体基板の方向に陥没する、太陽電池。 - 前記金属箔で形成された第2電極のコンタクト部は、前記半導体基板の後面に点接続するか、又は線接続する、請求項1に記載の太陽電池。
- 前記金属箔で形成された第2電極は、Ag、Al、Au、W、Mo、Ni、Pt、Cu、Ti、Cr、Feの内、少なくとも一つの材質で形成され、又は、これらの合金(alloy)材質で形成される、請求項1に記載の太陽電池。
- 前記金属箔で形成された第2電極の前記非コンタクト部の厚さは、20μm〜30μmである、請求項1に記載の太陽電池。
- 前記半導体基板と前記金属箔で形成された第2電極との間には、第1導電型と反対の第2導電型の不純物がドーピングされる第2半導体部をさらに含み、
前記金属箔で形成された第2電極の前記コンタクト部は、前記第2半導体部と接続され、前記非コンタクト部は、前記半導体基板の後面から離隔されて前記エアギャップ(air gap)が形成される、請求項1に記載の太陽電池。 - 前記第2半導体部において、前記コンタクト部に接続された部分の不純物のドーピング濃度は、前記第2半導体部において、前記コンタクト部が接続されていない部分の不純物ドーピング濃度より高い、請求項5に記載の太陽電池。
- 前記第2半導体部と前記金属箔で形成された第2電極との間には、前記半導体基板と、全体的に接続される金属電極層をさらに含み、
前記コンタクト部は、前記金属電極層と接続され、前記非コンタクト部は、前記金属電極層から離隔されて前記エアギャップ(air gap)が形成される、請求項5に記載の太陽電池。 - 前記第2半導体部と前記金属箔で形成された第2電極との間には、誘電体材質の後面パッシベーション層をさらに含み、
前記コンタクト部は、前記後面パッシベーション層を貫通して前記第2半導体部と接続され、前記非コンタクト部は、前記後面パッシベーション層から離隔されて前記エアギャップ(air gap)が形成される、請求項5に記載の太陽電池。 - 前記コンタクト部と前記第2半導体部との間には、前記後面パッシベーション層を貫通する導電性コンタクト電極がさらに位置する、請求項8に記載の太陽電池。
- 前記半導体基板は、結晶質シリコン材質で形成され、
前記第2半導体部は、非晶質シリコン材質で形成され、
前記非晶質シリコン材質で形成された第2半導体部の後面には、透明電極層が位置し、
前記コンタクト部は、前記透明電極層に接続され、前記非コンタクト部は、前記透明電極層から離隔されて前記エアギャップ(air gap)が形成される、請求項5に記載の太陽電池。 - 前記コンタクト部と前記透明電極層との間には、導電性コンタクト電極がさらに位置する、請求項10に記載の太陽電池。
- 前記第1半導体部は、前記半導体基板の後面に位置し、
前記半導体基板の後面に位置し、第1導電型と反対の第2導電型の不純物がドーピングされる第2半導体部とをさらに含み、
前記第1電極は、前記半導体基板の後面に位置して前記第1半導体部に接続され、
前記第2電極は、前記半導体基板の後面に位置して前記第2半導体部に接続され、
前記第1電極は前記半導体基板の前記第1半導体部に接続されるコンタクト部と、前記半導体基板の後面から離隔され前記半導体基板との間にエアギャップを形成する非コンタクト部を含む金属箔で形成され、
前記金属箔で形成された第1電極の前記コンタクト部は前記非コンタクト部より前記半導体基板の方向に陥没する、請求項1に記載の太陽電池。 - 前記第1コンタクト部は、前記第1半導体部の後面に点接続するか、又は線接続し、
前記第2コンタクト部は、前記第2半導体部の後面に点接続するか、又は線接続する、請求項12に記載の太陽電池。 - 前記金属箔で形成された第1、第2電極は、Ag、Al、Au、W、Mo、Ni、Pt、Cu、Ti、Cr、Feの内、少なくとも一つの材質で形成され、又は、これらの合金(alloy)材料で形成される、請求項12に記載の太陽電池。
- 前記第1電極の前記非コンタクト部の厚さは、20μm〜30μmである、請求項12に記載の太陽電池。
- 前面または後面に第1導電型の不純物がドーピングされる第1半導体部を備えた半導体基板を準備する段階と、
前記第1半導体部に接続される第1電極を形成する段階と、
金属箔で前記半導体基板の後面に配置した後、前記金属箔を局部的に熱処理して、前記半導体基板の後面に接続されるコンタクト部と、前記半導体基板の後面から離隔され、前記半導体基板との間のエアギャップを形成する非コンタクト部を含む第2電極形成段階と、を含み、
前記第2電極形成段階において、前記コンタクト部を局部的に熱処理して、前記第2電極の前記コンタクト部を前記非コンタクト部より前記半導体基板の方向に陥没させる、太陽電池の製造方法。 - 前記第1導電型と反対の第2導電型の不純物がドーピングされる第2半導体部を前記半導体基板の後面に形成し、前記コンタクト部を前記第2半導体部に接続する、請求項16に記載の太陽電池の製造方法。
- 前記第2電極形成段階において前記金属箔を局部的に熱処理する方法は、レーザー照射、赤外線(IR)照射、ホットエアー(Hot air)またはホットプローブ(Hot probe)の内、少なくともいずれか一つである、請求項16に記載の太陽電池の製造方法。
- 前記第2電極形成段階において前記金属箔を局部的に熱処理する方法は、レーザー照射であり、前記レーザーの強度(intensity)は、6mJ/cm2〜500mJ/cm2である、請求項16に記載の太陽電池の製造方法。
- 前記第1半導体部と前記第2半導体部のそれぞれは、相互に離隔された状態として、前記半導体基板の後面に第1方向に形成し、
金属箔を前記第1半導体基板の後面に配置した後、前記金属箔を局部的に熱処理して前記第1半導体部の後面に接続されるコンタクト部と、前記半導体基板の後面から離隔され、前記半導体基板との間にエアギャップを形成する非コンタクト部を含む前記第1電極を形成する、請求項17に記載の太陽電池の製造方法。
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KR10-2016-0010497 | 2016-01-28 | ||
KR1020160010497A KR101910642B1 (ko) | 2016-01-28 | 2016-01-28 | 태양 전지 및 그 제조 방법 |
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JP6437582B2 true JP6437582B2 (ja) | 2018-12-12 |
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EP3776670A4 (en) * | 2018-04-06 | 2021-05-05 | Sunpower Corporation | LASER-ASSISTED METALLIZATION PROCESS FOR SOLAR CELL STRING |
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JP2009117741A (ja) | 2007-11-09 | 2009-05-28 | Bridgestone Corp | 太陽電池及びその製造方法 |
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US9812592B2 (en) * | 2012-12-21 | 2017-11-07 | Sunpower Corporation | Metal-foil-assisted fabrication of thin-silicon solar cell |
US9640699B2 (en) * | 2013-02-08 | 2017-05-02 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device |
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US9590131B2 (en) * | 2013-03-27 | 2017-03-07 | Alliance For Sustainable Energy, Llc | Systems and methods for advanced ultra-high-performance InP solar cells |
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US8698036B1 (en) * | 2013-07-25 | 2014-04-15 | Hypertherm, Inc. | Devices for gas cooling plasma arc torches and related systems and methods |
US9806220B2 (en) * | 2013-11-12 | 2017-10-31 | Ob Realty, Llc | Metal foil metallization for backplane-attached solar cells and modules |
US10340848B2 (en) * | 2013-12-26 | 2019-07-02 | Kaneka Corporation | I-V measurement device for solar cell, manufacturing method for solar cell, and solar cell module |
US9947812B2 (en) * | 2014-03-28 | 2018-04-17 | Sunpower Corporation | Metallization of solar cells |
US9231129B2 (en) * | 2014-03-28 | 2016-01-05 | Sunpower Corporation | Foil-based metallization of solar cells |
US9911874B2 (en) | 2014-05-30 | 2018-03-06 | Sunpower Corporation | Alignment free solar cell metallization |
US9461192B2 (en) | 2014-12-16 | 2016-10-04 | Sunpower Corporation | Thick damage buffer for foil-based metallization of solar cells |
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