JPWO2021256190A1 - - Google Patents
Info
- Publication number
- JPWO2021256190A1 JPWO2021256190A1 JP2022532432A JP2022532432A JPWO2021256190A1 JP WO2021256190 A1 JPWO2021256190 A1 JP WO2021256190A1 JP 2022532432 A JP2022532432 A JP 2022532432A JP 2022532432 A JP2022532432 A JP 2022532432A JP WO2021256190 A1 JPWO2021256190 A1 JP WO2021256190A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/01—Manufacture or treatment
- H10H29/012—Manufacture or treatment of active-matrix LED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/01—Manufacture or treatment
- H10H29/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/01—Manufacture or treatment
- H10H29/036—Manufacture or treatment of packages
- H10H29/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/30—Active-matrix LED displays
- H10H29/39—Connection of the pixel electrodes to the driving transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/30—Active-matrix LED displays
- H10H29/41—Insulating layers formed between the driving transistors and the LEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/842—Coatings, e.g. passivation layers or antireflective coatings
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020105291 | 2020-06-18 | ||
| JP2020105291 | 2020-06-18 | ||
| PCT/JP2021/019782 WO2021256190A1 (ja) | 2020-06-18 | 2021-05-25 | 画像表示装置の製造方法および画像表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021256190A1 true JPWO2021256190A1 (https=) | 2021-12-23 |
| JPWO2021256190A5 JPWO2021256190A5 (https=) | 2024-06-03 |
| JP7647012B2 JP7647012B2 (ja) | 2025-03-18 |
Family
ID=79267870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022532432A Active JP7647012B2 (ja) | 2020-06-18 | 2021-05-25 | 画像表示装置の製造方法および画像表示装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12464859B2 (https=) |
| EP (1) | EP4170734A4 (https=) |
| JP (1) | JP7647012B2 (https=) |
| CN (1) | CN115699140B (https=) |
| TW (1) | TWI900576B (https=) |
| WO (1) | WO2021256190A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374056A (zh) * | 2022-06-30 | 2024-01-09 | 深超光电（深圳）有限公司 | 显示面板及显示面板制造方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003172950A (ja) * | 2001-06-22 | 2003-06-20 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
| JP2005333042A (ja) * | 2004-05-21 | 2005-12-02 | Sony Corp | 電気光学表示装置の製造方法及び電気光学表示装置 |
| JP2006261659A (ja) * | 2005-02-18 | 2006-09-28 | Sumitomo Chemical Co Ltd | 半導体発光素子の製造方法 |
| WO2006137711A1 (en) * | 2005-06-22 | 2006-12-28 | Seoul Opto-Device Co., Ltd. | Light emitting device and method of manufacturing the same |
| JP2009224769A (ja) * | 2008-02-18 | 2009-10-01 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2012204077A (ja) * | 2011-03-24 | 2012-10-22 | Sony Corp | 表示装置、表示装置の製造方法および電子機器 |
| US20140367719A1 (en) * | 2011-09-14 | 2014-12-18 | VerLASE TECHNOLOGIES LLC | Phosphors For Use With LEDS and Other Optoelectronic Devices |
| WO2019031183A1 (ja) * | 2017-08-10 | 2019-02-14 | シャープ株式会社 | 半導体モジュール、表示装置、及び半導体モジュールの製造方法 |
| US20190157523A1 (en) * | 2017-11-20 | 2019-05-23 | Kaistar Lighting (Xiamen) Co., Ltd. | Micro led display device and method for manufacturing same |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141492A (ja) | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
| US6583440B2 (en) | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
| JP3681992B2 (ja) | 2001-06-13 | 2005-08-10 | 日本電信電話株式会社 | 半導体集積回路の製造方法 |
| JP2003207806A (ja) * | 2002-01-11 | 2003-07-25 | Seiko Epson Corp | 電気光学装置および電気光学装置の製造方法、並びに投射型表示装置、電子機器 |
| KR100632004B1 (ko) | 2005-08-12 | 2006-10-09 | 삼성전기주식회사 | 질화물 단결정 기판 제조방법 및 질화물 반도체 발광소자 제조방법 |
| JP2008129314A (ja) * | 2006-11-21 | 2008-06-05 | Hitachi Displays Ltd | 画像表示装置およびその製造方法 |
| JP4538767B2 (ja) * | 2008-03-25 | 2010-09-08 | ソニー株式会社 | 表示装置の製造方法および表示装置、ならびに薄膜トランジスタ基板の製造方法および薄膜トランジスタ基板 |
| JP2010097077A (ja) * | 2008-10-17 | 2010-04-30 | Hitachi Displays Ltd | 表示装置及びその製造方法 |
| US8780310B2 (en) * | 2008-11-26 | 2014-07-15 | Sharp Kabushiki Kaisha | Display device having higher-layer wiring that does not overlap connection portion |
| KR101781532B1 (ko) * | 2011-03-14 | 2017-10-24 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치와 그 제조방법 |
| JP5842180B2 (ja) * | 2011-03-24 | 2016-01-13 | パナソニックＩｐマネジメント株式会社 | フレキシブル半導体装置及びその製造方法 |
| JP6110217B2 (ja) * | 2013-06-10 | 2017-04-05 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子の製造方法 |
| US10177123B2 (en) | 2014-12-19 | 2019-01-08 | Glo Ab | Light emitting diode array on a backplane and method of making thereof |
| US10192995B2 (en) * | 2015-04-28 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102335714B1 (ko) | 2016-10-24 | 2021-12-06 | 글로 에이비 | 발광 다이오드, 디스플레이 소자 및 직시형 디스플레이 소자 |
| KR102651097B1 (ko) * | 2016-10-28 | 2024-03-22 | 엘지디스플레이 주식회사 | 발광 다이오드 디스플레이 장치 |
| CN111966241B (zh) * | 2017-01-11 | 2023-05-30 | 群创光电股份有限公司 | 触控显示装置 |
| JP7079940B2 (ja) | 2017-01-13 | 2022-06-03 | マサチューセッツ インスティテュート オブ テクノロジー | ピクセル化ディスプレイ用多層構造体を形成する方法およびピクセル化ディスプレイ用多層構造体 |
| TWI646651B (zh) * | 2017-01-26 | 2019-01-01 | 宏碁股份有限公司 | 發光二極體顯示器及其製造方法 |
| KR102395993B1 (ko) | 2017-06-05 | 2022-05-11 | 삼성전자주식회사 | 디스플레이 장치 |
| CN108987423B (zh) | 2017-06-05 | 2023-09-12 | 三星电子株式会社 | 显示装置 |
| US10622342B2 (en) * | 2017-11-08 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Stacked LED structure and associated manufacturing method |
| JP7248441B2 (ja) | 2018-03-02 | 2023-03-29 | シャープ株式会社 | 画像表示素子 |
| JP7289294B2 (ja) | 2018-05-18 | 2023-06-09 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法 |
| US10566317B2 (en) * | 2018-05-20 | 2020-02-18 | Black Peak LLC | Light emitting device with small size and large density |
| CN108493209B (zh) | 2018-05-24 | 2020-06-23 | 京东方科技集团股份有限公司 | 一种显示基板、显示装置以及显示基板的制作方法 |
| CN112639937B (zh) | 2018-09-05 | 2023-06-23 | 株式会社半导体能源研究所 | 显示装置、显示模块、电子设备及显示装置的制造方法 |
| CN113439343A (zh) | 2019-03-22 | 2021-09-24 | 日亚化学工业株式会社 | 图像显示装置的制造方法和图像显示装置 |
| CN114175261A (zh) * | 2019-07-25 | 2022-03-11 | 日亚化学工业株式会社 | 图像显示装置的制造方法以及图像显示装置 |
| CN110459557B (zh) | 2019-08-16 | 2022-06-24 | 京东方科技集团股份有限公司 | 芯片晶圆及其制备方法、Micro-LED显示器 |
-
2021
- 2021-05-25 CN CN202180036453.8A patent/CN115699140B/zh active Active
- 2021-05-25 EP EP21826710.2A patent/EP4170734A4/en active Pending
- 2021-05-25 WO PCT/JP2021/019782 patent/WO2021256190A1/ja not_active Ceased
- 2021-05-25 JP JP2022532432A patent/JP7647012B2/ja active Active
- 2021-06-01 TW TW110119785A patent/TWI900576B/zh active
-
2022
- 2022-12-07 US US18/062,973 patent/US12464859B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003172950A (ja) * | 2001-06-22 | 2003-06-20 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
| JP2005333042A (ja) * | 2004-05-21 | 2005-12-02 | Sony Corp | 電気光学表示装置の製造方法及び電気光学表示装置 |
| JP2006261659A (ja) * | 2005-02-18 | 2006-09-28 | Sumitomo Chemical Co Ltd | 半導体発光素子の製造方法 |
| WO2006137711A1 (en) * | 2005-06-22 | 2006-12-28 | Seoul Opto-Device Co., Ltd. | Light emitting device and method of manufacturing the same |
| JP2009224769A (ja) * | 2008-02-18 | 2009-10-01 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2012204077A (ja) * | 2011-03-24 | 2012-10-22 | Sony Corp | 表示装置、表示装置の製造方法および電子機器 |
| US20140367719A1 (en) * | 2011-09-14 | 2014-12-18 | VerLASE TECHNOLOGIES LLC | Phosphors For Use With LEDS and Other Optoelectronic Devices |
| WO2019031183A1 (ja) * | 2017-08-10 | 2019-02-14 | シャープ株式会社 | 半導体モジュール、表示装置、及び半導体モジュールの製造方法 |
| US20190157523A1 (en) * | 2017-11-20 | 2019-05-23 | Kaistar Lighting (Xiamen) Co., Ltd. | Micro led display device and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4170734A4 (en) | 2024-06-19 |
| EP4170734A1 (en) | 2023-04-26 |
| TW202201774A (zh) | 2022-01-01 |
| CN115699140B (zh) | 2024-12-20 |
| TWI900576B (zh) | 2025-10-11 |
| CN115699140A (zh) | 2023-02-03 |
| US20230108577A1 (en) | 2023-04-06 |
| US12464859B2 (en) | 2025-11-04 |
| WO2021256190A1 (ja) | 2021-12-23 |
| JP7647012B2 (ja) | 2025-03-18 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240524 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240524 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241031 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241205 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250203 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250216 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7647012 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |