JP7647012B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置 Download PDF

Info

Publication number
JP7647012B2
JP7647012B2 JP2022532432A JP2022532432A JP7647012B2 JP 7647012 B2 JP7647012 B2 JP 7647012B2 JP 2022532432 A JP2022532432 A JP 2022532432A JP 2022532432 A JP2022532432 A JP 2022532432A JP 7647012 B2 JP7647012 B2 JP 7647012B2
Authority
JP
Japan
Prior art keywords
light
layer
semiconductor layer
image display
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022532432A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021256190A1 (https=
JPWO2021256190A5 (https=
Inventor
肇 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of JPWO2021256190A1 publication Critical patent/JPWO2021256190A1/ja
Publication of JPWO2021256190A5 publication Critical patent/JPWO2021256190A5/ja
Application granted granted Critical
Publication of JP7647012B2 publication Critical patent/JP7647012B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/39—Connection of the pixel electrodes to the driving transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/41—Insulating layers formed between the driving transistors and the LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/842—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2022532432A 2020-06-18 2021-05-25 画像表示装置の製造方法および画像表示装置 Active JP7647012B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020105291 2020-06-18
JP2020105291 2020-06-18
PCT/JP2021/019782 WO2021256190A1 (ja) 2020-06-18 2021-05-25 画像表示装置の製造方法および画像表示装置

Publications (3)

Publication Number Publication Date
JPWO2021256190A1 JPWO2021256190A1 (https=) 2021-12-23
JPWO2021256190A5 JPWO2021256190A5 (https=) 2024-06-03
JP7647012B2 true JP7647012B2 (ja) 2025-03-18

Family

ID=79267870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022532432A Active JP7647012B2 (ja) 2020-06-18 2021-05-25 画像表示装置の製造方法および画像表示装置

Country Status (6)

Country Link
US (1) US12464859B2 (https=)
EP (1) EP4170734A4 (https=)
JP (1) JP7647012B2 (https=)
CN (1) CN115699140B (https=)
TW (1) TWI900576B (https=)
WO (1) WO2021256190A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117374056A (zh) * 2022-06-30 2024-01-09 深超光电（深圳）有限公司 显示面板及显示面板制造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003172950A (ja) 2001-06-22 2003-06-20 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
JP2005333042A (ja) 2004-05-21 2005-12-02 Sony Corp 電気光学表示装置の製造方法及び電気光学表示装置
JP2006261659A (ja) 2005-02-18 2006-09-28 Sumitomo Chemical Co Ltd 半導体発光素子の製造方法
WO2006137711A1 (en) 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
JP2009224769A (ja) 2008-02-18 2009-10-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012204077A (ja) 2011-03-24 2012-10-22 Sony Corp 表示装置、表示装置の製造方法および電子機器
US20140367719A1 (en) 2011-09-14 2014-12-18 VerLASE TECHNOLOGIES LLC Phosphors For Use With LEDS and Other Optoelectronic Devices
WO2019031183A1 (ja) 2017-08-10 2019-02-14 シャープ株式会社 半導体モジュール、表示装置、及び半導体モジュールの製造方法
US20190157523A1 (en) 2017-11-20 2019-05-23 Kaistar Lighting (Xiamen) Co., Ltd. Micro led display device and method for manufacturing same

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
US6583440B2 (en) 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
JP3681992B2 (ja) 2001-06-13 2005-08-10 日本電信電話株式会社 半導体集積回路の製造方法
JP2003207806A (ja) * 2002-01-11 2003-07-25 Seiko Epson Corp 電気光学装置および電気光学装置の製造方法、並びに投射型表示装置、電子機器
KR100632004B1 (ko) 2005-08-12 2006-10-09 삼성전기주식회사 질화물 단결정 기판 제조방법 및 질화물 반도체 발광소자 제조방법
JP2008129314A (ja) * 2006-11-21 2008-06-05 Hitachi Displays Ltd 画像表示装置およびその製造方法
JP4538767B2 (ja) * 2008-03-25 2010-09-08 ソニー株式会社 表示装置の製造方法および表示装置、ならびに薄膜トランジスタ基板の製造方法および薄膜トランジスタ基板
JP2010097077A (ja) * 2008-10-17 2010-04-30 Hitachi Displays Ltd 表示装置及びその製造方法
US8780310B2 (en) * 2008-11-26 2014-07-15 Sharp Kabushiki Kaisha Display device having higher-layer wiring that does not overlap connection portion
KR101781532B1 (ko) * 2011-03-14 2017-10-24 삼성디스플레이 주식회사 유기 발광 표시 장치와 그 제조방법
JP5842180B2 (ja) * 2011-03-24 2016-01-13 パナソニックＩｐマネジメント株式会社 フレキシブル半導体装置及びその製造方法
JP6110217B2 (ja) * 2013-06-10 2017-04-05 ソニーセミコンダクタソリューションズ株式会社 発光素子の製造方法
US10177123B2 (en) 2014-12-19 2019-01-08 Glo Ab Light emitting diode array on a backplane and method of making thereof
US10192995B2 (en) * 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102335714B1 (ko) 2016-10-24 2021-12-06 글로 에이비 발광 다이오드, 디스플레이 소자 및 직시형 디스플레이 소자
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
CN111966241B (zh) * 2017-01-11 2023-05-30 群创光电股份有限公司 触控显示装置
JP7079940B2 (ja) 2017-01-13 2022-06-03 マサチューセッツ インスティテュート オブ テクノロジー ピクセル化ディスプレイ用多層構造体を形成する方法およびピクセル化ディスプレイ用多層構造体
TWI646651B (zh) * 2017-01-26 2019-01-01 宏碁股份有限公司 發光二極體顯示器及其製造方法
KR102395993B1 (ko) 2017-06-05 2022-05-11 삼성전자주식회사 디스플레이 장치
CN108987423B (zh) 2017-06-05 2023-09-12 三星电子株式会社 显示装置
US10622342B2 (en) * 2017-11-08 2020-04-14 Taiwan Semiconductor Manufacturing Company Ltd. Stacked LED structure and associated manufacturing method
JP7248441B2 (ja) 2018-03-02 2023-03-29 シャープ株式会社 画像表示素子
JP7289294B2 (ja) 2018-05-18 2023-06-09 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法
US10566317B2 (en) * 2018-05-20 2020-02-18 Black Peak LLC Light emitting device with small size and large density
CN108493209B (zh) 2018-05-24 2020-06-23 京东方科技集团股份有限公司 一种显示基板、显示装置以及显示基板的制作方法
CN112639937B (zh) 2018-09-05 2023-06-23 株式会社半导体能源研究所 显示装置、显示模块、电子设备及显示装置的制造方法
CN113439343A (zh) 2019-03-22 2021-09-24 日亚化学工业株式会社 图像显示装置的制造方法和图像显示装置
CN114175261A (zh) * 2019-07-25 2022-03-11 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
CN110459557B (zh) 2019-08-16 2022-06-24 京东方科技集团股份有限公司 芯片晶圆及其制备方法、Micro-LED显示器

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003172950A (ja) 2001-06-22 2003-06-20 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
JP2005333042A (ja) 2004-05-21 2005-12-02 Sony Corp 電気光学表示装置の製造方法及び電気光学表示装置
JP2006261659A (ja) 2005-02-18 2006-09-28 Sumitomo Chemical Co Ltd 半導体発光素子の製造方法
WO2006137711A1 (en) 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
JP2009224769A (ja) 2008-02-18 2009-10-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012204077A (ja) 2011-03-24 2012-10-22 Sony Corp 表示装置、表示装置の製造方法および電子機器
US20140367719A1 (en) 2011-09-14 2014-12-18 VerLASE TECHNOLOGIES LLC Phosphors For Use With LEDS and Other Optoelectronic Devices
WO2019031183A1 (ja) 2017-08-10 2019-02-14 シャープ株式会社 半導体モジュール、表示装置、及び半導体モジュールの製造方法
US20190157523A1 (en) 2017-11-20 2019-05-23 Kaistar Lighting (Xiamen) Co., Ltd. Micro led display device and method for manufacturing same

Also Published As

Publication number Publication date
EP4170734A4 (en) 2024-06-19
EP4170734A1 (en) 2023-04-26
TW202201774A (zh) 2022-01-01
CN115699140B (zh) 2024-12-20
TWI900576B (zh) 2025-10-11
JPWO2021256190A1 (https=) 2021-12-23
CN115699140A (zh) 2023-02-03
US20230108577A1 (en) 2023-04-06
US12464859B2 (en) 2025-11-04
WO2021256190A1 (ja) 2021-12-23

Similar Documents

Publication Publication Date Title
JP7585602B2 (ja) 画像表示装置の製造方法および画像表示装置
US12211883B2 (en) Method for manufacturing image display device and image display device
JP7669643B2 (ja) 画像表示装置の製造方法および画像表示装置
US20250248173A1 (en) Image display device manufacturing method and image display device
JP7489605B2 (ja) 画像表示装置の製造方法および画像表示装置
US12477886B2 (en) Method for manufacturing image display device and image display device
JP7647012B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7624587B2 (ja) 画像表示装置の製造方法および画像表示装置
US20230343813A1 (en) Method for manufacturing image display device and image display device
JP7617356B2 (ja) 画像表示装置の製造方法および画像表示装置
JP2024099072A (ja) 画像表示装置の製造方法および画像表示装置
TW202224232A (zh) 圖像顯示裝置之製造方法及圖像顯示裝置
JP7796318B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7531089B2 (ja) 画像表示装置の製造方法および画像表示装置
TW202303544A (zh) 圖像顯示裝置之製造方法及圖像顯示裝置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240524

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241205

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250216

R150 Certificate of patent or registration of utility model

Ref document number: 7647012

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150