JPWO2021210047A5 - - Google Patents
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- Publication number
- JPWO2021210047A5 JPWO2021210047A5 JP2022514883A JP2022514883A JPWO2021210047A5 JP WO2021210047 A5 JPWO2021210047 A5 JP WO2021210047A5 JP 2022514883 A JP2022514883 A JP 2022514883A JP 2022514883 A JP2022514883 A JP 2022514883A JP WO2021210047 A5 JPWO2021210047 A5 JP WO2021210047A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- circuit element
- manufacturing
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910003460 diamond Inorganic materials 0.000 claims 2
- 239000010432 diamond Substances 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims 1
- 239000004925 Acrylic resin Substances 0.000 claims 1
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/016312 WO2021210047A1 (ja) | 2020-04-13 | 2020-04-13 | 半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021210047A1 JPWO2021210047A1 (https=) | 2021-10-21 |
| JPWO2021210047A5 true JPWO2021210047A5 (https=) | 2022-07-05 |
| JP7186921B2 JP7186921B2 (ja) | 2022-12-09 |
Family
ID=78084736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022514883A Active JP7186921B2 (ja) | 2020-04-13 | 2020-04-13 | 半導体素子の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12387934B2 (https=) |
| EP (1) | EP4138116B1 (https=) |
| JP (1) | JP7186921B2 (https=) |
| KR (1) | KR102718211B1 (https=) |
| CN (1) | CN115428127B (https=) |
| WO (1) | WO2021210047A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12347717B2 (en) * | 2021-06-24 | 2025-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Debonding structures for wafer bonding |
| JP2025020566A (ja) * | 2023-07-31 | 2025-02-13 | 株式会社東芝 | 半導体装置の製造方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1174230A (ja) * | 1997-08-29 | 1999-03-16 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜半導体装置の製造方法 |
| JPH11261198A (ja) * | 1998-03-11 | 1999-09-24 | Dainippon Printing Co Ltd | 転写用原版を用いた配線基板の製造方法と転写用原版、および該転写用原版の製造方法 |
| US6593213B2 (en) * | 2001-09-20 | 2003-07-15 | Heliovolt Corporation | Synthesis of layers, coatings or films using electrostatic fields |
| JP2004055593A (ja) * | 2002-07-16 | 2004-02-19 | Hoya Corp | 配線基板およびその製造方法 |
| JP2005129825A (ja) | 2003-10-27 | 2005-05-19 | Sumitomo Chemical Co Ltd | 化合物半導体基板の製造方法 |
| JP2007188967A (ja) * | 2006-01-11 | 2007-07-26 | Sony Corp | 基板支持体、基板処理方法及び半導体装置の製造方法 |
| JP5003023B2 (ja) | 2006-06-01 | 2012-08-15 | ソニー株式会社 | 基板処理方法及び半導体装置の製造方法 |
| JP2012028477A (ja) | 2010-07-22 | 2012-02-09 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| US20140144593A1 (en) * | 2012-11-28 | 2014-05-29 | International Business Machiness Corporation | Wafer debonding using long-wavelength infrared radiation ablation |
| JP6299478B2 (ja) * | 2013-06-26 | 2018-03-28 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| WO2015156381A1 (ja) * | 2014-04-10 | 2015-10-15 | 富士電機株式会社 | 半導体基板の処理方法及び該処理方法を用いる半導体装置の製造方法 |
| CN110651359A (zh) * | 2017-05-25 | 2020-01-03 | 株式会社新川 | 结构体的制造方法及结构体 |
| SG10201913156WA (en) * | 2017-07-14 | 2020-02-27 | Shinetsu Chemical Co | Device substrate with high thermal conductivity and method of manufacturing the same |
| JP7041338B2 (ja) * | 2017-09-01 | 2022-03-24 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP7002398B2 (ja) | 2018-04-13 | 2022-01-20 | 株式会社ディスコ | 光学部品の接合方法 |
-
2020
- 2020-04-13 JP JP2022514883A patent/JP7186921B2/ja active Active
- 2020-04-13 US US17/912,053 patent/US12387934B2/en active Active
- 2020-04-13 KR KR1020227032511A patent/KR102718211B1/ko active Active
- 2020-04-13 CN CN202080099340.8A patent/CN115428127B/zh active Active
- 2020-04-13 EP EP20931548.0A patent/EP4138116B1/en active Active
- 2020-04-13 WO PCT/JP2020/016312 patent/WO2021210047A1/ja not_active Ceased
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