JPWO2021186562A5 - - Google Patents

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Publication number
JPWO2021186562A5
JPWO2021186562A5 JP2022508665A JP2022508665A JPWO2021186562A5 JP WO2021186562 A5 JPWO2021186562 A5 JP WO2021186562A5 JP 2022508665 A JP2022508665 A JP 2022508665A JP 2022508665 A JP2022508665 A JP 2022508665A JP WO2021186562 A5 JPWO2021186562 A5 JP WO2021186562A5
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Japan
Prior art keywords
processing
gas
substrate
inert gas
supply port
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JP2022508665A
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English (en)
Japanese (ja)
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JP7529764B2 (ja
JPWO2021186562A1 (https=
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Priority claimed from PCT/JP2020/011754 external-priority patent/WO2021186562A1/ja
Publication of JPWO2021186562A1 publication Critical patent/JPWO2021186562A1/ja
Publication of JPWO2021186562A5 publication Critical patent/JPWO2021186562A5/ja
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JP2022508665A 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム Active JP7529764B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/011754 WO2021186562A1 (ja) 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム

Publications (3)

Publication Number Publication Date
JPWO2021186562A1 JPWO2021186562A1 (https=) 2021-09-23
JPWO2021186562A5 true JPWO2021186562A5 (https=) 2022-07-27
JP7529764B2 JP7529764B2 (ja) 2024-08-06

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JP2022508665A Active JP7529764B2 (ja) 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム

Country Status (3)

Country Link
JP (1) JP7529764B2 (https=)
TW (1) TWI775328B (https=)
WO (1) WO2021186562A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102843769B1 (ko) * 2024-05-24 2025-08-08 주식회사 테스 기판처리장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421483B2 (ja) * 1995-08-25 2003-06-30 株式会社東芝 半導体装置の製造方法
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US6869641B2 (en) * 2002-07-03 2005-03-22 Unaxis Balzers Ltd. Method and apparatus for ALD on a rotary susceptor
JP2006274316A (ja) * 2005-03-28 2006-10-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2012237026A (ja) * 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP2013084895A (ja) * 2011-09-29 2013-05-09 Mitsubishi Electric Corp 基板処理装置、基板処理方法、及び太陽電池の製造方法
US9330939B2 (en) * 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
JP2015195312A (ja) * 2014-03-31 2015-11-05 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6698001B2 (ja) * 2016-10-24 2020-05-27 東京エレクトロン株式会社 処理装置及びカバー部材
JP6704008B2 (ja) * 2018-03-26 2020-06-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体

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