JP7529764B2 - 基板処理装置、半導体装置の製造方法及びプログラム - Google Patents

基板処理装置、半導体装置の製造方法及びプログラム Download PDF

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JP7529764B2
JP7529764B2 JP2022508665A JP2022508665A JP7529764B2 JP 7529764 B2 JP7529764 B2 JP 7529764B2 JP 2022508665 A JP2022508665 A JP 2022508665A JP 2022508665 A JP2022508665 A JP 2022508665A JP 7529764 B2 JP7529764 B2 JP 7529764B2
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processing
substrate
gas
inert gas
space
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JPWO2021186562A5 (https=
JPWO2021186562A1 (https=
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富大 天野
真 檜山
哲 高橋
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
JP2022508665A 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム Active JP7529764B2 (ja)

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PCT/JP2020/011754 WO2021186562A1 (ja) 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム

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JPWO2021186562A1 JPWO2021186562A1 (https=) 2021-09-23
JPWO2021186562A5 JPWO2021186562A5 (https=) 2022-07-27
JP7529764B2 true JP7529764B2 (ja) 2024-08-06

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JP (1) JP7529764B2 (https=)
TW (1) TWI775328B (https=)
WO (1) WO2021186562A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102843769B1 (ko) * 2024-05-24 2025-08-08 주식회사 테스 기판처리장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006274316A (ja) 2005-03-28 2006-10-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2012237026A (ja) 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP2013084895A (ja) 2011-09-29 2013-05-09 Mitsubishi Electric Corp 基板処理装置、基板処理方法、及び太陽電池の製造方法
JP2017212466A (ja) 2012-03-28 2017-11-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シームレスのコバルト間隙充填を可能にする方法
JP2018070906A (ja) 2016-10-24 2018-05-10 東京エレクトロン株式会社 処理装置及びカバー部材

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421483B2 (ja) * 1995-08-25 2003-06-30 株式会社東芝 半導体装置の製造方法
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US6869641B2 (en) * 2002-07-03 2005-03-22 Unaxis Balzers Ltd. Method and apparatus for ALD on a rotary susceptor
JP2015195312A (ja) * 2014-03-31 2015-11-05 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6704008B2 (ja) * 2018-03-26 2020-06-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006274316A (ja) 2005-03-28 2006-10-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2012237026A (ja) 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP2013084895A (ja) 2011-09-29 2013-05-09 Mitsubishi Electric Corp 基板処理装置、基板処理方法、及び太陽電池の製造方法
JP2017212466A (ja) 2012-03-28 2017-11-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シームレスのコバルト間隙充填を可能にする方法
JP2018070906A (ja) 2016-10-24 2018-05-10 東京エレクトロン株式会社 処理装置及びカバー部材

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TW202205477A (zh) 2022-02-01
WO2021186562A1 (ja) 2021-09-23
TWI775328B (zh) 2022-08-21
JPWO2021186562A1 (https=) 2021-09-23

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