TWI775328B - 基板處理裝置，半導體裝置的製造方法及程式 - Google Patents

基板處理裝置，半導體裝置的製造方法及程式 Download PDF

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Publication number
TWI775328B
TWI775328B TW110106856A TW110106856A TWI775328B TW I775328 B TWI775328 B TW I775328B TW 110106856 A TW110106856 A TW 110106856A TW 110106856 A TW110106856 A TW 110106856A TW I775328 B TWI775328 B TW I775328B
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Taiwan
Prior art keywords
processing
substrate
gas
inert gas
holding table
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TW110106856A
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English (en)
Chinese (zh)
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TW202205477A (zh
Inventor
天野富大
檜山真
高橋哲
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日商國際電氣股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW110106856A 2020-03-17 2021-02-26 基板處理裝置，半導體裝置的製造方法及程式 TWI775328B (zh)

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PCT/JP2020/011754 WO2021186562A1 (ja) 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム
WOPCT/JP2020/011754 2020-03-17

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TW202205477A TW202205477A (zh) 2022-02-01
TWI775328B true TWI775328B (zh) 2022-08-21

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JP (1) JP7529764B2 (https=)
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WO (1) WO2021186562A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102843769B1 (ko) * 2024-05-24 2025-08-08 주식회사 테스 기판처리장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US20040052972A1 (en) * 2002-07-03 2004-03-18 Jacques Schmitt Method and apparatus for ALD on a rotary susceptor
TW201536951A (zh) * 2014-03-31 2015-10-01 紐富來科技股份有限公司 氣相沈積裝置以及氣相沈積方法
US20180112309A1 (en) * 2016-10-24 2018-04-26 Tokyo Electron Limited Processing Apparatus and Cover Member
US20190294151A1 (en) * 2018-03-26 2019-09-26 Kokusai Electric Corporation Method of Manufacturing Semiconductor Device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421483B2 (ja) * 1995-08-25 2003-06-30 株式会社東芝 半導体装置の製造方法
JP2006274316A (ja) * 2005-03-28 2006-10-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2012237026A (ja) * 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP2013084895A (ja) * 2011-09-29 2013-05-09 Mitsubishi Electric Corp 基板処理装置、基板処理方法、及び太陽電池の製造方法
US9330939B2 (en) * 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US20040052972A1 (en) * 2002-07-03 2004-03-18 Jacques Schmitt Method and apparatus for ALD on a rotary susceptor
TW201536951A (zh) * 2014-03-31 2015-10-01 紐富來科技股份有限公司 氣相沈積裝置以及氣相沈積方法
US20180112309A1 (en) * 2016-10-24 2018-04-26 Tokyo Electron Limited Processing Apparatus and Cover Member
US20190294151A1 (en) * 2018-03-26 2019-09-26 Kokusai Electric Corporation Method of Manufacturing Semiconductor Device

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JP7529764B2 (ja) 2024-08-06
TW202205477A (zh) 2022-02-01
WO2021186562A1 (ja) 2021-09-23
JPWO2021186562A1 (https=) 2021-09-23

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