JPWO2021153351A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2021153351A5 JPWO2021153351A5 JP2021574657A JP2021574657A JPWO2021153351A5 JP WO2021153351 A5 JPWO2021153351 A5 JP WO2021153351A5 JP 2021574657 A JP2021574657 A JP 2021574657A JP 2021574657 A JP2021574657 A JP 2021574657A JP WO2021153351 A5 JPWO2021153351 A5 JP WO2021153351A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- areal density
- carbide epitaxial
- outer peripheral
- epitaxial substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 10
- 230000002093 peripheral effect Effects 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020012522 | 2020-01-29 | ||
| JP2020012522 | 2020-01-29 | ||
| PCT/JP2021/001693 WO2021153351A1 (ja) | 2020-01-29 | 2021-01-19 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021153351A1 JPWO2021153351A1 (https=) | 2021-08-05 |
| JPWO2021153351A5 true JPWO2021153351A5 (https=) | 2023-10-27 |
| JP7632313B2 JP7632313B2 (ja) | 2025-02-19 |
Family
ID=77078544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021574657A Active JP7632313B2 (ja) | 2020-01-29 | 2021-01-19 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230059737A1 (https=) |
| JP (1) | JP7632313B2 (https=) |
| CN (1) | CN115003866B (https=) |
| WO (1) | WO2021153351A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102564487B1 (ko) * | 2021-10-08 | 2023-08-07 | 주식회사 에타맥스 | 단일 입사광 기반 광루미네선스를 이용한 실리콘카바이드 기판의 결함분류 장비 및 그를 이용한 결함분류 방법 |
| JP2025072804A (ja) * | 2023-10-25 | 2025-05-12 | 株式会社レゾナック | ＳｉＣエピタキシャルウェハ |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4964672B2 (ja) * | 2007-05-23 | 2012-07-04 | 新日本製鐵株式会社 | 低抵抗率炭化珪素単結晶基板 |
| KR101287787B1 (ko) * | 2007-09-12 | 2013-07-18 | 쇼와 덴코 가부시키가이샤 | 에피택셜 ＳｉＣ 단결정 기판 및 에피택셜 ＳｉＣ 단결정 기판의 제조 방법 |
| US7915143B2 (en) * | 2008-04-30 | 2011-03-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of mediating forward voltage drift in a SiC device |
| JP5304713B2 (ja) * | 2010-04-07 | 2013-10-02 | 新日鐵住金株式会社 | 炭化珪素単結晶基板、炭化珪素エピタキシャルウェハ、及び薄膜エピタキシャルウェハ |
| JP5961357B2 (ja) * | 2011-09-09 | 2016-08-02 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JP6244826B2 (ja) * | 2013-11-01 | 2017-12-13 | 住友金属鉱山株式会社 | 炭化珪素基板、炭化珪素基板製造方法、半導体素子 |
| JP2016132604A (ja) * | 2015-01-21 | 2016-07-25 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素基板の製造方法 |
| JP6690282B2 (ja) * | 2016-02-15 | 2020-04-28 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP6757955B2 (ja) * | 2016-09-26 | 2020-09-23 | 国立研究開発法人産業技術総合研究所 | ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ |
| JP2017108179A (ja) * | 2017-03-08 | 2017-06-15 | 住友電気工業株式会社 | 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP6824088B2 (ja) * | 2017-03-24 | 2021-02-03 | 昭和電工株式会社 | 炭化珪素のエピタキシャル成長方法 |
| JP7415558B2 (ja) * | 2017-09-01 | 2024-01-17 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
-
2021
- 2021-01-19 CN CN202180010974.6A patent/CN115003866B/zh active Active
- 2021-01-19 WO PCT/JP2021/001693 patent/WO2021153351A1/ja not_active Ceased
- 2021-01-19 JP JP2021574657A patent/JP7632313B2/ja active Active
- 2021-01-19 US US17/793,399 patent/US20230059737A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9196483B1 (en) | Carrier channel with element concentration gradient distribution and fabrication method thereof | |
| EP1681713A4 (en) | SURFACE PROTECTION FILM AND SEMICONDUCTOR WAFER LAPPING METHOD | |
| JP2007504679A5 (https=) | ||
| JP2009111375A5 (https=) | ||
| JP2006147789A5 (https=) | ||
| JPWO2021153351A5 (https=) | ||
| CN107195579B (zh) | 晶圆承载装置 | |
| JP2015529017A5 (https=) | ||
| CN105845557B (zh) | 实现多晶硅栅极平坦化的方法 | |
| JPWO2019171198A5 (https=) | ||
| CN107611128A (zh) | 一种三维计算机闪存设备及其制作方法及缓冲层制作方法 | |
| US10049887B2 (en) | Method of planarizing substrate surface | |
| JP2013542599A (ja) | 半導体ウェハを処理するための方法、半導体ウェハおよび半導体デバイス | |
| JP2020107678A5 (https=) | ||
| CN205452236U (zh) | 一种平坦化的晶片结构 | |
| CN104465489B (zh) | 半导体器件及其形成方法 | |
| JPWO2020049420A5 (https=) | ||
| CN104867826A (zh) | 一种避免硅片边缘薄膜剥离的方法 | |
| CN111834222A (zh) | 半导体结构及其形成方法 | |
| JP2020068241A5 (https=) | ||
| CN100392818C (zh) | 一种可以改善半导体晶片几何参数的晶片加工方法 | |
| CN204441320U (zh) | 一种晶圆衬底 | |
| CN106504975B (zh) | 提高关键尺寸精确性的方法 | |
| CN107968050A (zh) | 沟道孔的底部刻蚀方法 | |
| CN207265023U (zh) | 晶片载具 |