JPWO2021130798A1 - プラズマ処理方法およびプラズマ処理に用いる波長選択方法 - Google Patents
プラズマ処理方法およびプラズマ処理に用いる波長選択方法 Download PDFInfo
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Abstract
Description
I_G,n=Σ_g Σ_h c(g,h)/(MT)×
{log(c(g,h)/(MT))−
log(c(g)/(MT))−log(c(h)/(MT))}
として算出される。ただし、Mは全ウエハ数、Tは全時間インデックス数である。
このようにして推定されたエッチング量に応じて終点判定が実行され(ステップ408)、所望のエッチング量に到達したと判定された場合には、処理室102内からの光の検出を終了すると共にプラズマが消火されこれによる試料104表面の処理対象の膜層のエッチング処理が終了する(ステップ409)。エッチング量が所望の値に到達していないと判断された場合には、次の当該膜層のエッチングが継続され次の時刻t+Δtにおいて処理室102内からの光の検出がエッチング量検出器110により実施される。
101…真空容器、
102…処理室、
103…プラズマ、
104…試料、
105…試料台、
106…光ファイバー、
110…エッチング量検出器、
111…分光器、
112…発光強度データベース、
113…波長選択部、
114…終点判定部、
115…表示器。
Claims (9)
- 真空容器内部の処理室内に処理対象のウエハを配置し、前記処理室内に処理用のガスを供給して生成したプラズマを用いて前記ウエハの表面に予め形成された処理対象の膜層を処理するプラズマ処理方法であって、
前記処理対象の膜層の処理中に生じるプラズマの複数の波長の発光のうち相互情報量の大きな複数の波長のものから選択された少なくとも2つの波長の前記発光の時間変化を検出した結果に基づいて前記膜層の処理の終点を判定するプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法であって、
前記処理対象の膜層が異なる材料から構成され相互に境界を接して上下に積層された2つの膜層を有し、前記少なくとも2つの波長が、前記2つの膜層を構成する前記材料または当該材料と前記処理用のガスとの化合物からの発光のうち前記相互情報量の大きな複数の波長のものから選択されたプラズマ処理方法。 - 請求項2に記載のプラズマ処理方法であって、
前記処理対象の膜層が下層の第1の膜層と上層の第2の膜層と当該第2の膜層が前記第1の膜層上方に形成される際にこれらの間に挟まれて形成された第3の膜層を有し、前記第1の膜層及び第2の膜層あるいは前記第2の膜層及び第3の膜層が前記2つの膜層を構成するプラズマ処理方法。 - 請求項1乃至3の何れかに記載のプラズマ処理方法であって、
前記2つの波長各々の相互情報量の値と前記発光の強度を乗じた値の時間変化または前記発光の強度の時間変化の値とを乗じた値を用いて前記膜層の処理の終点を判定するプラズマ処理方法。 - 請求項1乃至4の何れかに記載のプラズマ処理方法であって、
前記終点が判定された後に前記処理対象の膜層を処理する条件を変更して当該処理対象の膜層を処理するプラズマ処理方法。 - 真空容器内部の処理室内に処理対象のウエハを配置し、前記処理室内に処理用のガスを供給して生成したプラズマを用いて前記ウエハの表面に予め形成された処理対象の膜層を処理するプラズマ処理の終点の判定に用いる当該処理中のプラズマから生じる発光の所定の波長を選択する波長の選択方法であって、
前記処理対象の膜層の処理中に生じるプラズマの複数の波長の発光のうち前記終点への到達の前後の期間中において相互情報量の大きな複数の波長のものから少なくとも2つの波長を選択する波長の選択方法。 - 請求項6記載の波長の選択方法であって、
前記処理対象の膜層が異なる材料から構成され相互に境界を接して上下に積層された2つの膜層を有し、前記2つの膜層を構成する前記材料または当該材料と前記処理用のガスとの化合物からの発光のうち前記相互情報量の大きな複数の波長のものから前記少なくとも2つの波長を選択する波長の選択方法。
- 請求項7に記載の波長の選択方法であって、
前記処理対象の膜層が下層の第1の膜層と上層の第2の膜層と当該第2の膜層が前記第1の膜層上方に形成される際にこれらの間に挟まれて形成された第3の膜層を有し、前記第1の膜層及び第2の膜層あるいは前記第2の膜層及び第3の膜層が前記2つの膜層を構成する波長の選択方法。 - 請求項6乃至8の何れかに記載の波長の選択方法であって、
前記膜層の処理の終点の判定は、前記2つの波長各々の相互情報量の値と前記発光の強度を乗じた値の時間変化または前記発光の強度の時間変化の値とを乗じた値を用いてされる波長の選択方法。
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JP6762401B2 (ja) * | 2019-04-25 | 2020-09-30 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
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