JPWO2021130591A5 - - Google Patents
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- Publication number
- JPWO2021130591A5 JPWO2021130591A5 JP2021566372A JP2021566372A JPWO2021130591A5 JP WO2021130591 A5 JPWO2021130591 A5 JP WO2021130591A5 JP 2021566372 A JP2021566372 A JP 2021566372A JP 2021566372 A JP2021566372 A JP 2021566372A JP WO2021130591 A5 JPWO2021130591 A5 JP WO2021130591A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- memory circuit
- circuit
- semiconductor device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 16
- 230000015572 biosynthetic process Effects 0.000 claims 5
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 230000006870 function Effects 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025058192A JP7778264B2 (ja) | 2019-12-27 | 2025-03-31 | 半導体装置 |
| JP2025197409A JP2026027489A (ja) | 2019-12-27 | 2025-11-18 | 半導体装置 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019238710 | 2019-12-27 | ||
| JP2019238710 | 2019-12-27 | ||
| JP2020005295 | 2020-01-16 | ||
| JP2020005295 | 2020-01-16 | ||
| JP2020169003 | 2020-10-06 | ||
| JP2020169003 | 2020-10-06 | ||
| PCT/IB2020/061872 WO2021130591A1 (ja) | 2019-12-27 | 2020-12-14 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025058192A Division JP7778264B2 (ja) | 2019-12-27 | 2025-03-31 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021130591A1 JPWO2021130591A1 (https=) | 2021-07-01 |
| JPWO2021130591A5 true JPWO2021130591A5 (https=) | 2023-12-06 |
| JP7660075B2 JP7660075B2 (ja) | 2025-04-10 |
Family
ID=76575740
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021566372A Active JP7660075B2 (ja) | 2019-12-27 | 2020-12-14 | 半導体装置 |
| JP2025058192A Active JP7778264B2 (ja) | 2019-12-27 | 2025-03-31 | 半導体装置 |
| JP2025197409A Pending JP2026027489A (ja) | 2019-12-27 | 2025-11-18 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025058192A Active JP7778264B2 (ja) | 2019-12-27 | 2025-03-31 | 半導体装置 |
| JP2025197409A Pending JP2026027489A (ja) | 2019-12-27 | 2025-11-18 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12426313B2 (https=) |
| JP (3) | JP7660075B2 (https=) |
| KR (1) | KR20220120598A (https=) |
| CN (1) | CN114902414A (https=) |
| DE (1) | DE112020006360T5 (https=) |
| WO (1) | WO2021130591A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117094281B (zh) * | 2023-10-19 | 2024-02-13 | 杭州行芯科技有限公司 | 获取热力学参数的方法、电子设备及存储介质 |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008147340A (ja) | 2006-12-08 | 2008-06-26 | Nec Electronics Corp | 半導体装置、半導体装置の製造方法、及びｓｒａｍセル |
| JP2009277334A (ja) | 2008-04-14 | 2009-11-26 | Hitachi Ltd | 情報処理装置および半導体記憶装置 |
| JP6001900B2 (ja) | 2011-04-21 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
| TWI536502B (zh) | 2011-05-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 記憶體電路及電子裝置 |
| KR101889383B1 (ko) | 2011-05-16 | 2018-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 로직 디바이스 |
| US8837203B2 (en) | 2011-05-19 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6013682B2 (ja) | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| JP2013130802A (ja) | 2011-12-22 | 2013-07-04 | Semiconductor Energy Lab Co Ltd | 半導体装置、画像表示装置、記憶装置、及び電子機器 |
| KR102296696B1 (ko) | 2012-01-23 | 2021-09-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2013146154A1 (en) | 2012-03-29 | 2013-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Power supply control device |
| US9372694B2 (en) | 2012-03-29 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Reducing data backup and recovery periods in processors |
| KR102107591B1 (ko) | 2012-07-18 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 소자 및 프로그래머블 로직 디바이스 |
| JP2014112213A (ja) | 2012-10-30 | 2014-06-19 | Semiconductor Energy Lab Co Ltd | 表示装置の駆動方法 |
| JP2014142986A (ja) | 2012-12-26 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US9786350B2 (en) | 2013-03-18 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| US8994430B2 (en) | 2013-05-17 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9172369B2 (en) | 2013-05-17 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device and semiconductor device |
| US9406348B2 (en) | 2013-12-26 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Memory cell including transistor and capacitor |
| JP6442321B2 (ja) | 2014-03-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法、並びに電子機器 |
| JP6580863B2 (ja) | 2014-05-22 | 2019-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置、健康管理システム |
| US10236884B2 (en) | 2015-02-09 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Word line driver comprising NAND circuit |
| KR20230003301A (ko) | 2015-02-26 | 2023-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 시스템 및 정보 처리 시스템 |
| JP2016225614A (ja) | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6995481B2 (ja) | 2016-01-29 | 2022-02-04 | 株式会社半導体エネルギー研究所 | ソースドライバ |
| US10685614B2 (en) | 2016-03-17 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
| US11314484B2 (en) | 2017-05-19 | 2022-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising operation circuits and switch circuits |
| WO2019012370A1 (ja) | 2017-07-14 | 2019-01-17 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
| JP2019033233A (ja) * | 2017-08-10 | 2019-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置、および電子機器 |
| JP7004453B2 (ja) * | 2017-08-11 | 2022-01-21 | 株式会社半導体エネルギー研究所 | グラフィックスプロセッシングユニット |
| KR102531991B1 (ko) | 2017-08-25 | 2023-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US10943953B2 (en) | 2017-08-31 | 2021-03-09 | Micron Technology, Inc. | Semiconductor devices, hybrid transistors, and related methods |
| JP2019046199A (ja) | 2017-09-01 | 2019-03-22 | 株式会社半導体エネルギー研究所 | プロセッサ、および電子機器 |
| JP2019047006A (ja) | 2017-09-05 | 2019-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| JP7179740B2 (ja) | 2017-09-06 | 2022-11-29 | 株式会社半導体エネルギー研究所 | 電子機器 |
| US20190122104A1 (en) | 2017-10-19 | 2019-04-25 | General Electric Company | Building a binary neural network architecture |
| JP7028679B2 (ja) | 2018-03-02 | 2022-03-02 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP2019164868A (ja) | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 半導体記憶装置 |
| WO2020031031A1 (ja) * | 2018-08-09 | 2020-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| WO2021053453A1 (ja) | 2019-09-20 | 2021-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2020
- 2020-12-14 DE DE112020006360.7T patent/DE112020006360T5/de active Pending
- 2020-12-14 JP JP2021566372A patent/JP7660075B2/ja active Active
- 2020-12-14 WO PCT/IB2020/061872 patent/WO2021130591A1/ja not_active Ceased
- 2020-12-14 US US17/788,050 patent/US12426313B2/en active Active
- 2020-12-14 KR KR1020227023426A patent/KR20220120598A/ko active Pending
- 2020-12-14 CN CN202080090207.6A patent/CN114902414A/zh active Pending
-
2025
- 2025-03-31 JP JP2025058192A patent/JP7778264B2/ja active Active
- 2025-08-25 US US19/308,546 patent/US20250380462A1/en active Pending
- 2025-11-18 JP JP2025197409A patent/JP2026027489A/ja active Pending
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