JPWO2021125147A5 - - Google Patents

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JPWO2021125147A5
JPWO2021125147A5 JP2021565577A JP2021565577A JPWO2021125147A5 JP WO2021125147 A5 JPWO2021125147 A5 JP WO2021125147A5 JP 2021565577 A JP2021565577 A JP 2021565577A JP 2021565577 A JP2021565577 A JP 2021565577A JP WO2021125147 A5 JPWO2021125147 A5 JP WO2021125147A5
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hydrogen
semiconductor substrate
semiconductor device
region
concentration
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JP2021565577A
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Japanese (ja)
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JP7400834B2 (ja
JPWO2021125147A1 (https=
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Priority claimed from PCT/JP2020/046623 external-priority patent/WO2021125147A1/ja
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JP2021565577A 2019-12-18 2020-12-14 半導体装置および半導体装置の製造方法 Active JP7400834B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019228298 2019-12-18
JP2019228298 2019-12-18
PCT/JP2020/046623 WO2021125147A1 (ja) 2019-12-18 2020-12-14 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021125147A1 JPWO2021125147A1 (https=) 2021-06-24
JPWO2021125147A5 true JPWO2021125147A5 (https=) 2022-03-03
JP7400834B2 JP7400834B2 (ja) 2023-12-19

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JP2021565577A Active JP7400834B2 (ja) 2019-12-18 2020-12-14 半導体装置および半導体装置の製造方法

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US (1) US20220085166A1 (https=)
JP (1) JP7400834B2 (https=)
CN (1) CN113892185B (https=)
WO (1) WO2021125147A1 (https=)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200711171A (en) * 2005-04-05 2007-03-16 Toshiba Kk Gallium nitride based semiconductor device and method of manufacturing same
JP5228282B2 (ja) 2006-03-28 2013-07-03 トヨタ自動車株式会社 電力用半導体装置及びその製造方法
US8071451B2 (en) * 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
JP6067585B2 (ja) * 2011-12-28 2017-01-25 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6015745B2 (ja) * 2012-03-19 2016-10-26 富士電機株式会社 半導体装置の製造方法
KR101946454B1 (ko) * 2012-09-18 2019-02-12 삼성전자주식회사 고 전자 이동도 트랜지스터 및 그 제조 방법
DE102012020785B4 (de) * 2012-10-23 2014-11-06 Infineon Technologies Ag Erhöhung der Dotierungseffizienz bei Protonenbestrahlung
JP6037012B2 (ja) 2013-06-26 2016-11-30 富士電機株式会社 半導体装置および半導体装置の製造方法
US9312135B2 (en) * 2014-03-19 2016-04-12 Infineon Technologies Ag Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects
CN106062961B (zh) * 2014-09-17 2020-02-11 富士电机株式会社 半导体装置以及半导体装置的制造方法
CN108604602B (zh) * 2016-08-12 2021-06-15 富士电机株式会社 半导体装置及半导体装置的制造方法
WO2018092788A1 (ja) * 2016-11-16 2018-05-24 富士電機株式会社 半導体装置
JP6820738B2 (ja) * 2016-12-27 2021-01-27 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
DE112019000094T5 (de) 2018-03-19 2020-09-24 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung
CN112204710B (zh) * 2018-12-28 2024-07-09 富士电机株式会社 半导体装置及制造方法
US11201217B2 (en) * 2019-07-24 2021-12-14 Coorstek Kk Nitride semiconductor substrate
DE112020001029B4 (de) * 2019-10-11 2025-06-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
WO2021070584A1 (ja) * 2019-10-11 2021-04-15 富士電機株式会社 半導体装置および半導体装置の製造方法
DE112020002205B4 (de) * 2019-12-18 2025-06-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung
US12354878B2 (en) * 2020-03-13 2025-07-08 Mitsubishi Electric Corporation Semiconductor device having semiconductor substrate including hydrogen-related donor, and manufacturing method therefor

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