WO2021125147A1 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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WO2021125147A1
WO2021125147A1 PCT/JP2020/046623 JP2020046623W WO2021125147A1 WO 2021125147 A1 WO2021125147 A1 WO 2021125147A1 JP 2020046623 W JP2020046623 W JP 2020046623W WO 2021125147 A1 WO2021125147 A1 WO 2021125147A1
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hydrogen
semiconductor substrate
region
concentration
semiconductor device
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French (fr)
Japanese (ja)
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源宜 窪内
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Priority to US17/456,381 priority patent/US20220085166A1/en
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Definitions

  • the present invention relates to a semiconductor device and a manufacturing method.
  • Patent Document 1 US Patent Application Publication No. 2015/0050754 Specification
  • Patent Document 2 Republished Patent No. 2016-204227
  • Patent Document 3 JP-A-2007-266233
  • the donor concentration in the vicinity of the depth becomes high.
  • the semiconductor device may have a top surface and a bottom surface and may include a semiconductor substrate including a bulk donor.
  • the semiconductor device may include a hydrogen increasing portion in which the hydrogen chemical concentration monotonically increases from the upper surface to the lower surface.
  • the hydrogen increasing portion may be provided over 30% or more of the thickness of the semiconductor substrate in the depth direction.
  • the donor concentration in the hydrogen-increasing part may be higher than the bulk donor concentration.
  • the hydrogen chemical concentration may increase monotonically from the upper surface to the lower surface except for the portion where the local hydrogen concentration peak is provided.
  • the hydrogen increasing portion may have a portion on the lower surface side of the semiconductor substrate in which the inclination of the hydrogen chemical concentration distribution in the depth direction increases as it approaches the lower surface.
  • the semiconductor substrate may have a hydrogen concentration peak provided in a region other than the hydrogen increasing portion.
  • the semiconductor device may include a first conductive type drift region provided on the semiconductor substrate.
  • the semiconductor device may include a second conductive type base region provided between the upper surface of the semiconductor substrate and the drift region.
  • the semiconductor device may include a first conductive type emitter region having a doping concentration higher than that of the drift region, which is provided between the upper surface of the semiconductor substrate and the base region.
  • the semiconductor device may include a first conductive type buffer region having a doping concentration higher than that of the drift region, which is provided between the lower surface of the semiconductor substrate and the drift region.
  • the semiconductor device may include a gate trench portion provided from the upper surface of the semiconductor substrate to a depth position reaching the drift region.
  • the buffer region may include a hydrogen concentration peak. The hydrogen increasing portion may be arranged between the lower end of the trench portion and the upper end of the buffer region.
  • the hydrogen increasing portion may be provided from the lower end of the trench portion to the upper end of the buffer region.
  • the hydrogen chemical concentration distribution in the buffer region may have a lower hem from the hydrogen concentration peak toward the lower surface and an upper hem from the hydrogen concentration peak toward the upper surface.
  • the hydrogen chemical concentration of the upper hem may change more steeply than that of the lower hem.
  • the hydrogen chemical concentration may increase monotonically from the lower end of the trench to the upper hem.
  • the hydrogen increasing part may include a lifetime adjusting part that adjusts the lifetime of the carrier.
  • the semiconductor device may include a first conductive type drift region provided on the semiconductor substrate.
  • the semiconductor device may include a first conductive type storage region having a doping concentration higher than that of the drift region, which is provided between the upper surface of the semiconductor substrate and the drift region.
  • the semiconductor device may include a second conductive type base region provided between the upper surface of the semiconductor substrate and the storage region.
  • the semiconductor device may include a first conductive type emitter region having a doping concentration higher than that of the drift region, which is provided between the upper surface of the semiconductor substrate and the base region.
  • a gate trench portion provided from the upper surface of the semiconductor substrate to a depth position reaching the drift region may be provided.
  • the storage region may include a hydrogen concentration peak. The hydrogen increasing portion may be arranged between the lower end of the trench portion and the lower surface of the semiconductor substrate.
  • a second aspect of the present invention provides a method for manufacturing a semiconductor device including a semiconductor substrate having an upper surface and a lower surface.
  • the manufacturing method may include a first hydrogen injection step of injecting hydrogen ions from the upper surface of the semiconductor substrate into a predetermined first injection position inside the semiconductor substrate.
  • the manufacturing method may include a grinding step of grinding the lower surface of the semiconductor substrate to remove a part of the region where hydrogen is present.
  • the manufacturing method may include a heat treatment step of heat-treating the semiconductor substrate.
  • the first injection position may be located on the lower surface side of the semiconductor substrate after the grinding step.
  • the grinding step may be before the first hydrogen injection step.
  • the area including the first injection position may be removed.
  • the first injection position may be a position within the region where the semiconductor substrate has been ground and removed.
  • the manufacturing method may include a second hydrogen injection step in which hydrogen ions are injected from the upper surface or the lower surface of the semiconductor substrate into a predetermined second injection position inside the semiconductor substrate before the heat treatment step.
  • the area including the second injection position may be removed.
  • Hydrogen is injected into the second injection position so that the first hydrogen concentration peak of the hydrogen injected in the first hydrogen injection step and the second hydrogen concentration peak of the hydrogen injected in the second hydrogen injection step overlap. Good.
  • the second injection position may be arranged at a position where it is not ground in the grinding stage.
  • FIG. 1 It is sectional drawing which shows an example of the semiconductor device 100.
  • An example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the lines AA in FIG. 1 is shown.
  • Other examples of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the lines AA in FIG. 1 are shown.
  • FIG. 8B An example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the I-I line in FIG. 8B is shown. It is a figure which shows each distribution example of the hydrogen chemical concentration Dh and the carrier concentration Dc in the AA cross section of FIG. It is another figure which shows each distribution example of the hydrogen chemical concentration Dh and the carrier concentration Dc in the AA cross section of FIG. It is a figure which shows each distribution example of the hydrogen chemical concentration Dh and the carrier concentration Dc in the CC cross section of FIG. 8A. It is another figure which shows each distribution example of the hydrogen chemical concentration Dh and the carrier concentration Dc in the CC cross section of FIG. 8A.
  • FIG. 14 is a diagram showing another distribution example of the doping concentration Ddp and the hydrogen chemical concentration Dh on the FF line in FIG. It is a figure which shows another example of the ee cross section in FIG. It is a figure which shows an example of the manufacturing method of a semiconductor device 100. It is a figure which shows another example of the manufacturing method of a semiconductor device 100.
  • FIG. 22 It is a figure which shows another example of the manufacturing method of a semiconductor device 100. It is a figure which shows another example of the manufacturing method of a semiconductor device 100. It is sectional drawing which shows the other example of the semiconductor device 100. An example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the GG line in FIG. 22 is shown. It is a figure which shows another example of the manufacturing method of a semiconductor device 100. It is sectional drawing which shows an example of the semiconductor device 100. It is a figure which shows the example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of a donor concentration Dd, and the distribution of a bulk donor concentration D0 at the position shown by the HH line of FIG.
  • one side in the direction parallel to the depth direction of the semiconductor substrate is referred to as "upper” and the other side is referred to as “lower”.
  • the upper surface is referred to as the upper surface and the other surface is referred to as the lower surface.
  • the “up” and “down” directions are not limited to the direction of gravity or the direction when the semiconductor device is mounted.
  • Cartesian coordinate axes of the X-axis, the Y-axis, and the Z-axis only specify the relative positions of the components and do not limit the specific direction.
  • the Z axis does not limit the height direction with respect to the ground.
  • the + Z-axis direction and the ⁇ Z-axis direction are opposite to each other. When the positive and negative directions are not described and the Z-axis direction is described, it means the direction parallel to the + Z-axis and the -Z-axis.
  • the X-axis and the Y-axis are orthogonal axes parallel to the upper surface and the lower surface of the semiconductor substrate. Further, the axis perpendicular to the upper surface and the lower surface of the semiconductor substrate is defined as the Z axis.
  • the direction of the Z axis may be referred to as a depth direction. Further, in the present specification, the direction parallel to the upper surface and the lower surface of the semiconductor substrate including the X-axis and the Y-axis may be referred to as a horizontal direction.
  • the region from the center in the depth direction of the semiconductor substrate to the upper surface of the semiconductor substrate may be referred to as the upper surface side.
  • the region from the center of the semiconductor substrate in the depth direction to the lower surface of the semiconductor substrate may be referred to as the lower surface side.
  • error When referred to as “same” or “equal” in the present specification, it may include a case where there is an error due to manufacturing variation or the like.
  • the error is, for example, within 10%.
  • the conductive type of the doping region doped with impurities is described as P type or N type.
  • an impurity may mean, in particular, either an N-type donor or a P-type acceptor, and may be referred to as a dopant.
  • doping means that a donor or acceptor is introduced into a semiconductor substrate to obtain a semiconductor exhibiting an N-type conductive type or a semiconductor exhibiting a P-type conductive type.
  • the doping concentration means the concentration of a donor or the concentration of an acceptor in a thermal equilibrium state.
  • the net doping concentration means the net concentration of the donor concentration as the concentration of positive ions and the acceptor concentration as the concentration of negative ions, including the polarity of the charge.
  • the donor concentration N D, the acceptor concentration and N A, the net doping concentration of the net at any position is N D -N A.
  • the net doping concentration may be simply referred to as a doping concentration.
  • the donor has the function of supplying electrons to the semiconductor.
  • the acceptor has a function of receiving electrons from a semiconductor.
  • Donors and acceptors are not limited to the impurities themselves.
  • a VOH defect in which pores (V), oxygen (O) and hydrogen (H) are bonded in a semiconductor functions as a donor that supplies electrons.
  • VOH defects are sometimes referred to herein as hydrogen donors.
  • the description of P + type or N + type means that the doping concentration is higher than that of P type or N type
  • the description of P-type or N-type means that the doping concentration is higher than that of P-type or N-type. It means that the concentration is low.
  • the unit system of the present specification is the SI unit system. The unit of length may be displayed in cm, but various calculations may be performed after converting to meters (m).
  • the chemical concentration refers to the atomic density of impurities measured regardless of the state of electrical activation.
  • the chemical concentration can be measured, for example, by secondary ion mass spectrometry (SIMS).
  • the net doping concentration described above can be measured by a voltage-capacity measurement method (CV method).
  • the carrier concentration measured by the spread resistance measurement method (SR method) may be used as the net doping concentration.
  • the carrier concentration measured by the CV method or the SR method may be a value in a thermal equilibrium state.
  • the donor concentration is sufficiently higher than the acceptor concentration, so that the carrier concentration in the region may be used as the donor concentration.
  • the carrier concentration in the region may be used as the acceptor concentration.
  • the doping concentration in the N-type region may be referred to as the donor concentration
  • the doping concentration in the P-type region may be referred to as the acceptor concentration.
  • the peak value may be used as the concentration of donor, acceptor or net doping in the region.
  • the concentration of donor, acceptor or net doping is substantially uniform, the average value of the concentration of donor, acceptor or net doping in the region may be used as the concentration of donor, acceptor or net doping.
  • at lesms / cm 3 or / cm 3 is used to indicate the concentration per unit volume. This unit is used for the donor or acceptor concentration in the semiconductor substrate, or the chemical concentration. The at Budapestms notation may be omitted.
  • the carrier concentration measured by the SR method may be lower than the concentration of the donor or acceptor.
  • the carrier mobility of the semiconductor substrate may be lower than the value in the crystalline state. The decrease in carrier mobility occurs when carriers are scattered due to disorder of the crystal structure due to lattice defects or the like.
  • the concentration of the donor or acceptor calculated from the carrier concentration measured by the CV method or the SR method may be lower than the chemical concentration of the element indicating the donor or acceptor.
  • the donor concentration of phosphorus or arsenic as a donor in a silicon semiconductor, or the acceptor concentration of boron (boron) as an acceptor is about 99% of these chemical concentrations.
  • the donor concentration of hydrogen as a donor in a silicon semiconductor is about 0.1% to 10% of the chemical concentration of hydrogen.
  • Each concentration in the present specification may be a value at room temperature.
  • the value at room temperature may be the value at 300 K (Kelvin) (about 26.9 ° C.).
  • FIG. 1 is a cross-sectional view showing an example of the semiconductor device 100.
  • the semiconductor device 100 includes a semiconductor substrate 10.
  • the semiconductor substrate 10 is a substrate made of a semiconductor material.
  • the semiconductor substrate 10 is a silicon substrate.
  • At least one of a transistor element such as an insulated gate type bipolar transistor (IGBT) and a diode element such as a freewheeling diode (FWD) is formed on the semiconductor substrate 10.
  • a transistor element such as an insulated gate type bipolar transistor (IGBT) and a diode element such as a freewheeling diode (FWD) is formed on the semiconductor substrate 10.
  • IGBT insulated gate type bipolar transistor
  • FWD freewheeling diode
  • N-type bulk donors are distributed throughout.
  • the bulk donor is a donor due to a dopant contained in the ingot substantially uniformly during the production of the ingot that is the source of the semiconductor substrate 10.
  • the bulk donor in this example is an element other than hydrogen.
  • Bulk donor dopants are, but are not limited to, for example phosphorus, antimony, arsenic, selenium or sulfur.
  • the bulk donor in this example is phosphorus.
  • Bulk donors are also included in the P-type region.
  • the semiconductor substrate 10 may be a wafer cut out from a semiconductor ingot, or may be a chip obtained by fragmenting the wafer.
  • the semiconductor ingot may be manufactured by any one of a Czochralski method (CZ method), a magnetic field application type Czochralski method (MCZ method), and a float zone method (FZ method).
  • CZ method Czochralski method
  • MCZ method magnetic field application type Czochralski method
  • FZ method float zone method
  • the ingot in this example is manufactured by the MCZ method.
  • the oxygen concentration contained in the substrate manufactured by the MCZ method is 1 ⁇ 10 17 to 7 ⁇ 10 17 / cm 3 .
  • the oxygen concentration contained in the substrate manufactured by the FZ method is 1 ⁇ 10 15 to 5 ⁇ 10 16 / cm 3 . The higher the oxygen concentration, the easier it is for hydrogen donors to be produced.
  • the bulk donor concentration may use the chemical concentration of the bulk donor distributed throughout the semiconductor substrate 10, and may be a value between 90% and 100% of the chemical concentration.
  • a non-doped substrate containing no dopant such as phosphorus may be used as the semiconductor substrate 10.
  • the bulk donor concentration (D0) of the non-doping substrate is, for example, 1 ⁇ 10 10 / cm 3 or more and 5 ⁇ 10 12 / cm 3 or less.
  • the bulk donor concentration (D0) of the non-doping substrate is preferably 1 ⁇ 10 11 / cm 3 or more.
  • the bulk donor concentration (D0) of the non-doping substrate is preferably 5 ⁇ 10 12 / cm 3 or less.
  • the semiconductor substrate 10 is adjusted to a thickness corresponding to a predetermined withstand voltage by grinding the lower surface.
  • FIG. 1 the lower surface 19 before grinding and the lower surface 23 after grinding are shown. Further, the region of the semiconductor substrate 10 removed by grinding is shown by a broken line. In the present specification, unless otherwise specified, the semiconductor substrate 10 will be described as a ground substrate.
  • the ground semiconductor substrate 10 has an upper surface 21 and a lower surface 23 facing each other.
  • the upper surface 21 and the lower surface 23 are two main surfaces of the semiconductor substrate 10.
  • the orthogonal axes in the plane parallel to the upper surface 21 and the lower surface 23 are the X-axis and the Y-axis
  • the axes perpendicular to the upper surface 21 and the lower surface 23 are the Z-axis.
  • Hydrogen ions (for example, protons) are injected into the semiconductor substrate 10 before grinding from the upper surface 21 to the first injection position Zi1.
  • the first injection position Zi1 is a position where the distance from the upper surface 21 in the depth direction (Z-axis direction) is Zi1. In the present specification, unless otherwise specified, the position in the Z-axis direction is defined by the distance from the upper surface 21.
  • the average distance (also referred to as range) for hydrogen ions to pass through the inside of the semiconductor substrate 10 can be controlled by the acceleration energy for accelerating the hydrogen ions. In this example, the acceleration energy is adjusted so that the range of hydrogen ions is the distance Zi1.
  • the hydrogen chemical concentration peaks at the first injection position Zi1. Further, inside the semiconductor substrate 10, some hydrogen ions remain in the region through which the hydrogen ions have passed. Therefore, hydrogen can be distributed from the upper surface 21 to the first injection position Zi1.
  • the region through which the injected hydrogen ions have passed may be referred to as a passage region.
  • the passage region is from the upper surface 21 of the semiconductor substrate 10 to the first injection position Zi1. Hydrogen ions may be injected into the entire upper surface 21, and hydrogen ions may be injected into only a part of the region.
  • lattice defects mainly composed of vacancies such as monoatomic vacancies (V) and compound atom vacancies (VV) are formed. ing. Atoms adjacent to vacancies have dangling bonds. Lattice defects include interstitial atoms and dislocations, and may also include donors and acceptors in a broad sense. However, in the present specification, lattice defects mainly composed of vacancies are referred to as vacancies, vacancies, or vacancies. Sometimes referred to simply as a lattice defect. Further, the crystallinity of the semiconductor substrate 10 may be strongly disturbed due to the formation of many lattice defects by implanting hydrogen ions into the semiconductor substrate 10. In the present specification, this disorder of crystallinity may be referred to as disorder.
  • oxygen is contained in the entire semiconductor substrate 10.
  • the oxygen is intentionally or unintentionally introduced during the manufacture of semiconductor ingots.
  • H hydrogen
  • V pores
  • O oxygen
  • the VOH defect acts as an electron-supplying donor.
  • VOH defects may be referred to simply as hydrogen donors.
  • a hydrogen donor is formed in a region through which hydrogen ions pass.
  • the doping concentration of hydrogen donors is lower than the chemical concentration of hydrogen. Assuming that the ratio of the doping concentration of the hydrogen donor to the chemical concentration of hydrogen is the activation rate, the activation rate may be a value of 0.1% to 30%. In this example, the activation rate is 1% to 5%.
  • the donor concentration in the passing region can be made higher than the bulk donor concentration.
  • the semiconductor substrate 10 having a predetermined bulk donor concentration must be prepared according to the characteristics of the element to be formed on the semiconductor substrate 10, particularly the rated voltage or the withstand voltage.
  • the donor concentration of the semiconductor substrate 10 can be adjusted by controlling the dose amount of hydrogen ions. Therefore, the semiconductor device 100 can be manufactured by using a semiconductor substrate having a bulk donor concentration that does not correspond to the characteristics of the device or the like.
  • the dose amount of hydrogen ions can be controlled with relatively high accuracy. Therefore, the concentration of lattice defects generated by injecting hydrogen ions can be controlled with high accuracy, and the donor concentration in the passing region can be controlled with high accuracy.
  • the lower surface 19 may be ground to the vicinity of the first injection position Zi1.
  • the lower surface 19 of the semiconductor substrate 10 is ground to the upper surface 21 side of the first injection position Zi1.
  • a relatively large number of hydrogen donors are formed in the vicinity of the first injection position Zi1.
  • a relatively large number of lattice defects are formed in the vicinity of the first injection position Zi1. By grinding to the vicinity of the first injection position Zi1, at least a part of the region having many lattice defects can be removed, and the characteristics of the semiconductor device 100 can be easily adjusted.
  • the lower surface 23 after grinding may be arranged on the upper surface 21 side of the first injection position Zi1, may be arranged on the lower surface 19 side, or may be arranged at the first injection position Zi1.
  • the distance between the lower surface 23 and the first injection position Zi1 in the Z-axis direction may be 10 ⁇ m or less, 5 ⁇ m or less, or 1 ⁇ m or less.
  • the depth position of the upper surface 21 is Z1 (that is, the distance between the upper surface 21 and the depth position Z1 is 0 ⁇ m)
  • the depth position of the lower surface 23 is Z2
  • the depth position of the lower surface 19 is Let be Z3.
  • FIG. 2 shows an example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the lines AA in FIG.
  • the horizontal axis of FIG. 2 is a linear axis indicating the depth position from the upper surface 21, and the vertical axis is a logarithmic axis indicating the concentration per unit volume.
  • the donor concentration Dd in FIG. 2 is measured by, for example, the CV method or the SR method.
  • the hydrogen chemical concentration Dh in FIG. 2 is, for example, the hydrogen concentration measured by the SIMS method.
  • the bulk donor concentration D0 is, for example, the phosphorus concentration measured by the SIMS method.
  • the bulk donor concentration D0 is uniform over the entire surface of the semiconductor substrate 10.
  • the hydrogen chemical concentration Dh is shown by a solid line
  • the donor concentration Dd and the bulk donor concentration D0 are shown by a broken line.
  • the central position of the semiconductor substrate 10 in the depth direction is Zc.
  • the hydrogen chemical concentration on the upper surface 21 of the semiconductor substrate 10 is Dh1
  • the donor concentration is Dd1
  • the hydrogen chemical concentration on the lower surface 23 is Dh2
  • the donor concentration is Dd2
  • the hydrogen chemical concentration at the first injection position Zi1 is Dhi1 and the donor concentration. Is Ddi1.
  • the hydrogen chemical concentration Dh has a first hydrogen concentration peak 201, and the donor concentration Dd has a first donor concentration peak 211.
  • the distribution of the hydrogen chemical concentration Dh has a lower hem 202 from the first hydrogen concentration peak 201 toward the lower surface 23 and an upper hem 203 toward the upper surface 21 from the first hydrogen concentration peak 201. Since hydrogen ions are injected from the upper surface 21 to the first injection position Zi1, the hydrogen chemical concentration sharply decreases in the region on the lower surface 23 side of the first injection position Zi1. Therefore, the lower hem 202 has a steeper change in hydrogen chemical concentration than the upper hem 203.
  • the distribution of the donor concentration Dd has a lower hem 212 from the first donor concentration peak 211 toward the lower surface 23 and an upper hem 213 from the first donor concentration peak 211 toward the upper surface 21.
  • the lower hem 212 has a steeper change in donor study concentration than the upper hem 213.
  • the semiconductor substrate 10 includes a hydrogen increasing portion 180 in which the hydrogen chemical concentration Dh monotonically increases from the upper surface 21 to the lower surface 23.
  • the monotonous increase means that there is no portion where the hydrogen chemical concentration Dh decreases from the upper surface 21 to the lower surface 23. That is, the hydrogen increasing portion 180 is composed of a region in which the hydrogen chemical concentration Dh does not change and a region in which the hydrogen chemical concentration Dh increases from the upper surface 21 to the lower surface 23. Since hydrogen ions are injected from the upper surface 21 to the first injection position Zi1, the hydrogen chemical concentration Dh tends to be higher as it is closer to the first injection position Zi1, and the hydrogen chemical concentration Dh tends to be lower as it is closer to the upper surface 21.
  • the hydrogen increasing portion 180 is continuously provided over 30% or more of the thickness Z2 in the depth direction of the semiconductor substrate 10. Thereby, the donor concentration in the region of the semiconductor substrate 10 can be adjusted.
  • the hydrogen increasing portion 180 may be continuously provided over 50% or more of the thickness Z2 of the semiconductor substrate 10, may be continuously provided over 70% or more, and may be continuously provided over 80% or more. It may be provided.
  • the hydrogen increasing portion 180 may be provided so as to straddle the central position Zc of the semiconductor substrate 10. That is, the hydrogen increasing portion 180 may be provided from the upper surface 21 side of the semiconductor substrate 10 to the lower surface 23 side.
  • the first injection position Zi1 is arranged on the lower surface 23 side of the semiconductor substrate 10.
  • the lower surface 23 is arranged on the upper surface 21 side of the first injection position Zi1.
  • the hydrogen increasing portion 180 may be provided from the upper surface 21 to the lower surface 23.
  • the first hydrogen concentration peak 201 is arranged inside the semiconductor substrate 10. In this case, the hydrogen increasing portion 180 is provided from the upper surface 21 to the first injection position Zi1.
  • the distribution of the hydrogen chemical concentration Dh in this example has a linear portion 204.
  • the straight line portion 204 is a region where the distribution shape of the hydrogen chemical concentration Dh is approximated by a straight line. In the straight portion 204, the hydrogen chemical concentration Dh increases monotonically toward the lower surface 23 or is substantially uniform.
  • the distribution of the hydrogen chemical concentration Dh has a connecting portion 205 connecting the straight portion 204 and the upper hem 203.
  • the slope of the distribution of the hydrogen chemical concentration Dh increases as it approaches the lower surface 23 at the connection portion 205.
  • the hydrogen chemical concentration Dh2 on the lower surface 23 may be twice or more, five times or more, or ten times or more the hydrogen chemical concentration Dh1 on the upper surface 21.
  • the distribution of the donor concentration Dd has a linear portion 214.
  • the straight line portion 214 is a region where the distribution shape of the donor concentration Dd is approximated by a straight line.
  • the distribution of the donor concentration Dd has a connecting portion 215 connecting the straight portion 214 and the upper hem 213.
  • the slope of the distribution of the donor concentration Dd may increase as it approaches the lower surface 23 at the connection portion 215.
  • the donor concentration Dd2 on the lower surface 23 may be twice or more, five times or more, or ten times or more the donor concentration Dd1 on the upper surface 21.
  • FIG. 3 is a diagram illustrating a distribution example of the hydrogen chemical concentration Dh in the straight line portion 204.
  • the vertical and horizontal axes of this figure are linear scales.
  • the hydrogen chemical concentration Dh in the straight portion 204 is uniform or increases monotonically toward the lower surface 23.
  • the distribution of the hydrogen chemical concentration Dh may have minute irregularities due to measurement error or the like.
  • the straight line 190 is flat or a straight line in which the hydrogen chemical concentration Dh increases from the upper surface 21 to the lower surface 23.
  • the hydrogen chemical concentration Dh in the straight line portion 204 may have a variation of ⁇ 7% or less with respect to the straight line 190.
  • the range having a width of ⁇ 7% with respect to the straight line 190 is defined as a band-shaped range 192.
  • the width of the strip range 192 may be ⁇ 17% of the value of the straight line 190 and may be ⁇ 30% of the value of the straight line 190.
  • the region where the hydrogen chemical concentration Dh falls within the band-shaped range 192 may be the linear portion 204.
  • the straight portion 204 may be continuously provided over a length of 30% or more of the thickness of the semiconductor substrate 10, may be continuously provided over a length of 50% or more, and may be continuously provided over a length of 70% or more. It may be provided continuously over the span.
  • the distribution connecting the hydrogen chemical concentrations Dh at both ends of the straight line portion 204 in the depth direction with a straight line may be defined as a straight line 190.
  • the straight line 190 may be a straight line in which the hydrogen chemical concentration Dh in a predetermined region is fitted by a linear function.
  • the absolute value of the inclination of the straight line 190 in the straight line portion 204 may be 0 / (cm 3 ⁇ ⁇ m) or more and 2 ⁇ 10 12 / (cm 3 ⁇ ⁇ m) or less with respect to the depth ( ⁇ m), and is 0. It may be larger than / (cm 3 ⁇ ⁇ m) and less than 1 ⁇ 10 12 / (cm 3 ⁇ ⁇ m). Further, the absolute value of the inclination of the straight line 190 in the straight line portion 204 is 1 ⁇ 10 10 / (cm 3 ⁇ ⁇ m) or more and 1 ⁇ 10 12 / (cm 3 ⁇ ⁇ m) or less with respect to the depth ( ⁇ m).
  • 5 ⁇ 10 11 / (cm 3 ⁇ ⁇ m) has the same inclination (equivalent) as 5 ⁇ 10 15 / cm 4.
  • a semi-logarithmic slope may be used as another index of the slope of the straight line 190.
  • the position of one end of the straight line portion 204 in the depth direction is x1 (cm), and the position of the other end is x2 (cm).
  • concentration at x1 be N1 (/ cm 3 ) and the concentration at x2 be N2 (/ cm 3 ).
  • the absolute value of the semi-log slope ⁇ of the straight line 190 in the straight line portion 204 may be 0 / cm or more and 50 / cm or less, and may be 0 / cm or more and 30 / cm or less. Further, the absolute value of the semi-log slope ⁇ of the straight line 190 in the straight line portion 204 may be 0 / cm or more and 20 / cm or less, and may be 0 / cm or more and 10 / cm or less.
  • FIG. 4 shows other examples of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the lines AA in FIG. There is.
  • the first injection position Zi1 and the depth position Z2 on the lower surface 23 coincide with each other.
  • the hydrogen chemical concentration Dh2 on the lower surface 23 coincides with the hydrogen chemical concentration Dhi1 of the first hydrogen concentration peak 201.
  • the entire area from the upper surface 21 to the lower surface 23 becomes the hydrogen increasing portion 180.
  • the first hydrogen concentration peak 201 is contained in the semiconductor substrate 10, hydrogen can be easily diffused to the upper surface 21 side.
  • a high-concentration N-type region can be formed.
  • FIG. 5 shows other examples of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the lines AA in FIG. There is.
  • the first injection position Zi1 is arranged on the upper surface 21 side of the lower surface 23.
  • the hydrogen chemical concentration Dh has a lower hem 202, a first hydrogen concentration peak 201, and an upper hem 203.
  • the depth position Z2 of the lower surface 23 may be arranged within the range provided with the lower hem 202. In this case, only a part of the lower hem 202 remains on the semiconductor substrate 10.
  • the hydrogen chemical concentration Dh2 on the lower surface 23 is smaller than the hydrogen chemical concentration Dhi1 of the first hydrogen concentration peak 201. According to this example, the diffusion of hydrogen to the upper surface 21 side is easier. In addition, a high-concentration N-type region can be formed.
  • FIG. 6 is a diagram showing another configuration example of the semiconductor device 100.
  • the semiconductor device 100 of this example is different from the examples shown in FIGS. 1 to 5 in that hydrogen ions are also injected into the second injection position Zi2.
  • Other structures are similar to the semiconductor device 100 of any aspect described with reference to FIGS. 1 to 5.
  • the second injection position Zi2 of this example is arranged on the upper surface 21 side of the semiconductor substrate 10.
  • the distance of the second injection position Zi2 in the depth direction from the upper surface 21 may be 5 ⁇ m or less, 10 ⁇ m or less, or 20 ⁇ m or less.
  • hydrogen ions are injected from the upper surface 21 to the second injection position Zi2.
  • hydrogen ions may be injected from the lower surface 23 to the second injection position Zi2.
  • FIG. 7 shows an example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the lines BB in FIG.
  • the semiconductor substrate 10 of this example has a second hydrogen concentration peak 206 and a second donor concentration peak 216 at the second injection position Zi2.
  • the distribution of the hydrogen chemical concentration Dh has a lower hem 207 from the second hydrogen concentration peak 206 toward the lower surface 23 and an upper hem 208 from the second hydrogen concentration peak 206 toward the upper surface 21.
  • the full width at half maximum of the second hydrogen concentration peak 206 may be 1/10 or less of the thickness of the semiconductor substrate 10.
  • the distribution of the donor concentration Dd has a lower hem 217 from the second donor concentration peak 216 toward the lower surface 23 and an upper hem 218 from the second donor concentration peak 216 toward the upper surface 21.
  • the lower hem 217 has a steeper change in donor study concentration than the upper hem 218.
  • Other structures are similar to the semiconductor device 100 of any aspect described with reference to FIGS. 1 to 5.
  • the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206 may be larger or smaller than the hydrogen chemical concentration Dh2 on the lower surface 23.
  • hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206 By increasing the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206, hydrogen easily diffuses toward the lower surface 23 side. Further, by reducing the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206, the concentration of lattice defects formed in the vicinity of the second injection position Zi2 can be reduced.
  • the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206 may be 10 times or more the hydrogen chemical concentration Dh2 on the lower surface 23.
  • the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206 may be larger or smaller than the hydrogen chemical concentration Dhi1 of the first hydrogen concentration peak 201.
  • the hydrogen chemical concentration Ddi2 of the second donor concentration peak 216 may be larger or smaller than the donor concentration Dd2 on the lower surface 23.
  • the donor concentration Ddi2 of the second donor concentration peak 216 may be 10 times or more the donor concentration Dd2 on the lower surface 23.
  • the second hydrogen concentration peak 206 is arranged in a region other than the hydrogen increasing portion 180.
  • the hydrogen increasing portion 180 is provided from the second hydrogen concentration peak 206 to the lower surface 23.
  • the hydrogen chemical concentration Dh increases monotonically from the upper surface 21 to the lower surface 23, except for the portion where the local second hydrogen concentration peak 206 (including the upper hem 208 and the lower hem 207) is provided.
  • FIG. 8A is a diagram showing another configuration example of the semiconductor device 100.
  • the semiconductor device 100 of this example is different from the examples shown in FIGS. 1 to 5 in that hydrogen ions are also injected into the second injection position Zi2.
  • Other structures are similar to the semiconductor device 100 of any aspect described with reference to FIGS. 1 to 5.
  • the second injection position Zi2 of this example is arranged on the lower surface 23 side of the semiconductor substrate 10.
  • the distance of the second injection position Zi2 in the depth direction from the lower surface 23 may be 5 ⁇ m or less, 10 ⁇ m or less, or 20 ⁇ m or less.
  • the second injection position Zi2 may be arranged between the first injection position Zi1 and the upper surface 21.
  • the distance of the second injection position Zi2 in the depth direction from the first injection position Zi1 may be 1 ⁇ m or less, 5 ⁇ m or less, or 10 ⁇ m or less.
  • the second injection position Zi2 may coincide with the first injection position Zi1.
  • the second injection position Zi2 may be located on the lower surface side of the first injection position Zi1.
  • FIG. 8B is a diagram showing another configuration example of the semiconductor device 100.
  • the semiconductor device 100 of this example differs from the example of FIG. 8A in that the position of the lower surface 23 is arranged on the upper surface 21 side of both the first injection position Zi1 and the second injection position Zi2.
  • Other structures are the same as in the example of FIG. 8A.
  • the lower surface 19 is ground after diffusing hydrogen by heat treatment. As a result, the high-concentration hydrogen at the first injection position Zi1 and the second injection position Zi2 does not remain on the ground semiconductor substrate 10.
  • FIG. 9A shows an example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the CC line of FIG. 8A.
  • the semiconductor substrate 10 of this example has a second hydrogen concentration peak 206 and a second donor concentration peak 216 at the second injection position Zi2. Further, between the second injection position Zi2 and the first injection position Zi1, the valley portion 209 of the hydrogen chemical concentration and the valley portion 219 of the donor concentration are provided. The valley is the part where the concentration is the minimum value.
  • the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206 may be larger or smaller than the hydrogen chemical concentration Dh2 on the lower surface 23.
  • the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206 may be larger or smaller than the hydrogen chemical concentration Dhi1 of the first hydrogen concentration peak 201.
  • the hydrogen chemical concentration Dhi2 of the second hydrogen concentration peak 206 may be 10 times or more the hydrogen chemical concentration Dh2 on the lower surface 23, or may be 10 times or more the hydrogen chemical concentration Dhi1 of the first hydrogen concentration peak 201.
  • the first hydrogen concentration peak 201 and the second hydrogen concentration peak 206 may be arranged so as to overlap each other. Overlapping peaks may mean that the vertices of the other peak are located within the full width at half maximum of one peak. Further, when the hydrogen chemical concentration in the valley 209 is at least half of the lower of the hydrogen chemical concentration Dhi1 and the hydrogen chemical concentration Dhi2, the first hydrogen concentration peak 201 and the second hydrogen concentration peak 206 overlap. May be.
  • the hydrogen chemical concentration Ddi2 of the second donor concentration peak 216 may be larger or smaller than the donor concentration Dd2 on the lower surface 23.
  • the donor concentration Ddi2 of the second donor concentration peak 216 may be 10 times or more the donor concentration Dd2 on the lower surface 23, or may be 10 times or more the donor concentration peak 211 of the first donor concentration peak 211.
  • FIG. 9B shows an example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the I-I line of FIG. 8B.
  • the depth position Z2 in this example may be closer to the upper surface 21 than the positions of the first hydrogen concentration peak 201 and the second hydrogen concentration peak 206.
  • FIG. 10A is a diagram showing distribution examples of the hydrogen chemical concentration Dh and the carrier concentration Dc in the AA cross section of FIG.
  • the distribution of the hydrogen chemical concentration Dh may be the same as in the example of FIG. 2, FIG. 4, or FIG.
  • the semiconductor device 100 of this example has a lifetime adjusting unit 231 in the hydrogen increasing unit 180.
  • the lifetime adjusting unit 231 is a portion where the density distribution of the lifetime killer such as a lattice defect shows a maximum value. Lifetime killer shortens carrier lifetime by combining with holes or electrons. Further, the lifetime adjusting unit 231 may be a portion where the lifetime of the carrier shows a minimum value.
  • the carrier concentration Dc has a carrier concentration peak 220.
  • the carrier concentration Dc may have a lifetime adjusting unit 231 in contact with the carrier concentration peak 220.
  • FIG. 10B is another diagram showing each distribution example of the hydrogen chemical concentration Dh and the carrier concentration Dc in the AA cross section of FIG. It differs from FIG. 10A in that the carrier concentration Dc does not decrease in the region on the upper surface 21 side of the carrier concentration peak 220 and the carrier lifetime adjusting unit 231 is not provided. In this example, the carrier lifetime does not have to have a local minimum.
  • the carrier concentrations Dc2 and Dci may be the same as the donor concentrations Dd2 and Ddi.
  • FIG. 11A is a diagram showing distribution examples of the hydrogen chemical concentration Dh and the carrier concentration Dc in the CC cross section of FIG. 8A.
  • the distribution of the hydrogen chemical concentration Dh may be the same as in the example of FIG. 9A.
  • the second hydrogen concentration peak 206 is arranged in contact with the first hydrogen concentration peak 201.
  • the carrier lifetime in the vicinity of the second hydrogen concentration peak 206 is restored.
  • hydrogen ions may be injected from the lower surface 23 to the second injection position Zi2.
  • the acceleration energy of hydrogen ions into the second injection position Zi2 can be reduced, and the formation of lattice defects due to the injection of hydrogen ions into the second injection position Zi2 can be suppressed.
  • the lifetime adjusting unit 230 of this example is provided in contact with the second hydrogen concentration peak 206 on the upper surface 21 side of the second hydrogen concentration peak 206. Further, by providing the second hydrogen concentration peak 206, the length of the lifetime adjusting unit 230 in the depth direction can be adjusted. Therefore, it becomes easy to control the distribution of the carrier lifetime in the depth direction.
  • the lifetime killer is formed by irradiating particles other than hydrogen such as helium.
  • the lifetime adjusting unit 230 can be formed by irradiating with hydrogen. Therefore, the lifetime adjusting unit 230 of this example does not contain helium.
  • the hydrogen chemical concentration of the upper hem 208 of the second hydrogen concentration peak 206 may change more steeply than that of the lower hem 207.
  • the hydrogen chemical concentration monotonically increases from the lower end of the gate trench portion 40 to the upper end of the upper hem 208.
  • FIG. 11B is another diagram showing each distribution example of the hydrogen chemical concentration Dh and the carrier concentration Dc in the CC cross section of FIG. 8A. It differs from FIG. 11A in that the carrier concentration Dc does not decrease in the region on the upper surface 21 side of the carrier concentration peak 220 and the carrier lifetime adjusting unit 230 is not provided. In this example, the carrier lifetime does not have to have a local minimum.
  • FIG. 12 is a top view showing an example of the semiconductor device 100.
  • FIG. 12 shows the positions where each member is projected onto the upper surface of the semiconductor substrate 10. In FIG. 12, only a part of the members of the semiconductor device 100 is shown, and some members are omitted.
  • the semiconductor device 100 includes a semiconductor substrate 10.
  • the semiconductor substrate 10 may have the hydrogen chemical concentration distribution, the donor concentration distribution, and the carrier concentration distribution described in FIGS. 1 to 11B. However, the semiconductor substrate 10 may further have other concentration peaks different from the respective concentration peaks described in FIGS. 1 to 11B.
  • hydrogen ions may be injected to form an N-type region in the semiconductor substrate 10.
  • the hydrogen chemical concentration distribution may have a local hydrogen concentration peak in addition to the distribution of the hydrogen chemical concentration Dh described in FIGS. 1 to 11B.
  • an N-type region other than hydrogen such as phosphorus may be injected to form an N-type region in the semiconductor substrate 10.
  • the donor concentration distribution may have a local donor concentration peak in addition to the donor concentration distribution described in FIGS. 1 to 11B.
  • a P-type region such as boron may be injected to form a P-type region in the semiconductor substrate 10.
  • the carrier concentration distribution may have a local carrier concentration peak in addition to the carrier concentration distribution described in FIGS. 10A to 11B.
  • the semiconductor substrate 10 has an end side 162 in a top view. When simply referred to as a top view in the present specification, it means that the semiconductor substrate 10 is viewed from the top surface side.
  • the semiconductor substrate 10 of this example has two sets of end sides 162 facing each other in a top view. In FIG. 12, the X-axis and the Y-axis are parallel to either end 162. The Z-axis is perpendicular to the upper surface of the semiconductor substrate 10.
  • the semiconductor substrate 10 is provided with an active portion 160.
  • the active portion 160 is a region in which a main current flows in the depth direction between the upper surface and the lower surface of the semiconductor substrate 10 when the semiconductor device 100 operates.
  • An emitter electrode is provided above the active portion 160, but is omitted in FIG.
  • the active unit 160 is provided with at least one of a transistor unit 70 including a transistor element such as an IGBT and a diode unit 80 including a diode element such as a freewheeling diode (FWD).
  • a transistor unit 70 including a transistor element such as an IGBT and a diode unit 80 including a diode element such as a freewheeling diode (FWD).
  • the transistor portion 70 and the diode portion 80 are alternately arranged along a predetermined arrangement direction (X-axis direction in this example) on the upper surface of the semiconductor substrate 10.
  • the active portion 160 may be provided with only one of the transistor portion 70 and the diode portion 80.
  • the symbol “I” is attached to the region where the transistor portion 70 is arranged, and the symbol “F” is attached to the region where the diode portion 80 is arranged.
  • the direction perpendicular to the arrangement direction in the top view may be referred to as a stretching direction (Y-axis direction in FIG. 12).
  • the transistor portion 70 and the diode portion 80 may each have a longitudinal length in the stretching direction. That is, the length of the transistor portion 70 in the Y-axis direction is larger than the width in the X-axis direction. Similarly, the length of the diode portion 80 in the Y-axis direction is larger than the width in the X-axis direction.
  • the stretching direction of the transistor portion 70 and the diode portion 80 may be the same as the longitudinal direction of each trench portion described later.
  • the diode portion 80 has an N + type cathode region in a region in contact with the lower surface of the semiconductor substrate 10.
  • the region provided with the cathode region is referred to as a diode portion 80. That is, the diode portion 80 is a region that overlaps with the cathode region in the top view.
  • a P + type collector region may be provided on the lower surface of the semiconductor substrate 10 in a region other than the cathode region.
  • the diode portion 80 may also include an extension region 81 in which the diode portion 80 is extended in the Y-axis direction to the gate wiring described later.
  • a collector area is provided on the lower surface of the extension area 81.
  • the transistor portion 70 has a P + type collector region in a region in contact with the lower surface of the semiconductor substrate 10. Further, in the transistor portion 70, a gate structure having an N-type emitter region, a P-type base region, a gate conductive portion and a gate insulating film is periodically arranged on the upper surface side of the semiconductor substrate 10.
  • the semiconductor device 100 may have one or more pads above the semiconductor substrate 10.
  • the semiconductor device 100 of this example has a gate pad 164.
  • the semiconductor device 100 may have pads such as an anode pad, a cathode pad, and a current detection pad. Each pad is arranged in the vicinity of the edge 162.
  • the vicinity of the end side 162 refers to a region between the end side 162 and the emitter electrode in the top view.
  • each pad may be connected to an external circuit via wiring such as a wire.
  • a gate potential is applied to the gate pad 164.
  • the gate pad 164 is electrically connected to the conductive portion of the gate trench portion of the active portion 160.
  • the semiconductor device 100 includes a gate wiring that connects the gate pad 164 and the gate trench portion. In FIG. 12, the gate wiring is hatched with diagonal lines.
  • the gate wiring of this example has an outer peripheral gate wiring 130 and an active side gate wiring 131.
  • the outer peripheral gate wiring 130 is arranged between the active portion 160 and the end side 162 of the semiconductor substrate 10 in a top view.
  • the outer peripheral gate wiring 130 of this example surrounds the active portion 160 in a top view.
  • the region surrounded by the outer peripheral gate wiring 130 in the top view may be the active portion 160.
  • the outer peripheral gate wiring 130 is connected to the gate pad 164.
  • the outer peripheral gate wiring 130 is arranged above the semiconductor substrate 10.
  • the outer peripheral gate wiring 130 may be a metal wiring containing aluminum or the like.
  • the active side gate wiring 131 is provided in the active portion 160. By providing the active side gate wiring 131 in the active portion 160, it is possible to reduce the variation in the wiring length from the gate pad 164 in each region of the semiconductor substrate 10.
  • the active side gate wiring 131 is connected to the gate trench portion of the active portion 160.
  • the active side gate wiring 131 is arranged above the semiconductor substrate 10.
  • the active side gate wiring 131 may be wiring formed of a semiconductor such as polysilicon doped with impurities.
  • the active side gate wiring 131 may be connected to the outer peripheral gate wiring 130.
  • the active side gate wiring 131 of this example is provided so as to extend in the X-axis direction from one outer peripheral gate wiring 130 to the other outer peripheral gate wiring 130 at substantially the center in the Y-axis direction so as to cross the active portion 160. There is.
  • the transistor portion 70 and the diode portion 80 may be alternately arranged in the X-axis direction in each divided region.
  • the semiconductor device 100 includes a temperature sense unit (not shown) which is a PN junction diode made of polysilicon or the like, and a current detection unit (not shown) which simulates the operation of a transistor unit provided in the active unit 160. May be good.
  • a temperature sense unit (not shown) which is a PN junction diode made of polysilicon or the like
  • a current detection unit (not shown) which simulates the operation of a transistor unit provided in the active unit 160. May be good.
  • the semiconductor device 100 of this example includes an edge termination structure portion 90 between the active portion 160 and the end side 162 in a top view.
  • the edge termination structure 90 of this example is arranged between the outer peripheral gate wiring 130 and the end edge 162.
  • the edge termination structure 90 relaxes the electric field concentration on the upper surface side of the semiconductor substrate 10.
  • the edge termination structure 90 may include at least one of a guard ring, a field plate and a resurf provided in an annular shape surrounding the active portion 160.
  • FIG. 13 is an enlarged view of the region D in FIG.
  • the region D is a region including the transistor portion 70, the diode portion 80, and the active side gate wiring 131.
  • the semiconductor device 100 of this example includes a gate trench portion 40, a dummy trench portion 30, a well region 11, an emitter region 12, a base region 14, and a contact region 15 provided inside the upper surface side of the semiconductor substrate 10.
  • the gate trench portion 40 and the dummy trench portion 30 are examples of trench portions, respectively.
  • the semiconductor device 100 of this example includes an emitter electrode 52 and an active side gate wiring 131 provided above the upper surface of the semiconductor substrate 10.
  • the emitter electrode 52 and the active side gate wiring 131 are provided separately from each other.
  • An interlayer insulating film is provided between the emitter electrode 52 and the active side gate wiring 131 and the upper surface of the semiconductor substrate 10, but this is omitted in FIG.
  • a contact hole 54 is provided so as to penetrate the interlayer insulating film.
  • each contact hole 54 is hatched with diagonal lines.
  • the emitter electrode 52 is provided above the gate trench portion 40, the dummy trench portion 30, the well region 11, the emitter region 12, the base region 14, and the contact region 15.
  • the emitter electrode 52 passes through the contact hole 54 and comes into contact with the emitter region 12, the contact region 15, and the base region 14 on the upper surface of the semiconductor substrate 10. Further, the emitter electrode 52 is connected to the dummy conductive portion in the dummy trench portion 30 through a contact hole provided in the interlayer insulating film.
  • the emitter electrode 52 may be connected to the dummy conductive portion of the dummy trench portion 30 at the tip of the dummy trench portion 30 in the Y-axis direction.
  • the active side gate wiring 131 is connected to the gate trench portion 40 through a contact hole provided in the interlayer insulating film.
  • the active side gate wiring 131 may be connected to the gate conductive portion of the gate trench portion 40 at the tip portion 41 of the gate trench portion 40 in the Y-axis direction.
  • the active side gate wiring 131 is not connected to the dummy conductive portion in the dummy trench portion 30.
  • the emitter electrode 52 is made of a material containing metal. In FIG. 13, the range in which the emitter electrode 52 is provided is shown. For example, at least a part of the emitter electrode 52 is formed of an aluminum or aluminum-silicon alloy, for example, a metal alloy such as AlSi or AlSiCu.
  • the emitter electrode 52 may have a barrier metal formed of titanium, a titanium compound, or the like in the lower layer of the region formed of aluminum or the like. Further, the contact hole may have a plug formed by embedding tungsten or the like so as to be in contact with the barrier metal and aluminum or the like.
  • the well region 11 is provided so as to overlap the active side gate wiring 131.
  • the well region 11 is extended to a predetermined width so as not to overlap with the active side gate wiring 131.
  • the well region 11 of this example is provided away from the end of the contact hole 54 in the Y-axis direction on the active side gate wiring 131 side.
  • the well region 11 is a second conductive type region having a higher doping concentration than the base region 14.
  • the base region 14 of this example is P-type, and the well region 11 is P + type.
  • Each of the transistor portion 70 and the diode portion 80 has a plurality of trench portions arranged in the arrangement direction.
  • the transistor portion 70 of this example one or more gate trench portions 40 and one or more dummy trench portions 30 are alternately provided along the arrangement direction.
  • the diode portion 80 of this example is provided with a plurality of dummy trench portions 30 along the arrangement direction.
  • the diode portion 80 of this example is not provided with the gate trench portion 40.
  • the gate trench portion 40 of this example connects two straight portions 39 (portions that are linear along the stretching direction) and two straight portions 39 that extend along the stretching direction perpendicular to the arrangement direction. It may have a tip 41.
  • the stretching direction in FIG. 13 is the Y-axis direction.
  • the tip portion 41 is provided in a curved shape in a top view.
  • the dummy trench portion 30 is provided between the straight portions 39 of the gate trench portion 40.
  • One dummy trench portion 30 may be provided between the straight portions 39, and a plurality of dummy trench portions 30 may be provided.
  • the dummy trench portion 30 may have a linear shape extending in the stretching direction, and may have a straight portion 29 and a tip portion 31 as in the gate trench portion 40.
  • the semiconductor device 100 shown in FIG. 13 includes both a linear dummy trench portion 30 having no tip portion 31 and a dummy trench portion 30 having a tip portion 31.
  • the diffusion depth of the well region 11 may be deeper than the depth of the gate trench portion 40 and the dummy trench portion 30.
  • the ends of the gate trench portion 40 and the dummy trench portion 30 in the Y-axis direction are provided in the well region 11 in the top view. That is, at the end of each trench in the Y-axis direction, the bottom of each trench in the depth direction is covered with the well region 11. Thereby, the electric field concentration at the bottom of each trench can be relaxed.
  • a mesa part is provided between each trench part in the arrangement direction.
  • the mesa portion refers to a region sandwiched between trench portions inside the semiconductor substrate 10.
  • the upper end of the mesa portion is the upper surface of the semiconductor substrate 10.
  • the depth position of the lower end of the mesa portion is the same as the depth position of the lower end of the trench portion.
  • the mesa portion of this example is provided on the upper surface of the semiconductor substrate 10 by extending in the stretching direction (Y-axis direction) along the trench.
  • the transistor portion 70 is provided with a mesa portion 60
  • the diode portion 80 is provided with a mesa portion 61.
  • a mesa portion when simply referred to as a mesa portion in the present specification, it refers to each of the mesa portion 60 and the mesa portion 61.
  • a base region 14 is provided in each mesa section. Of the base region 14 exposed on the upper surface of the semiconductor substrate 10 in the mesa portion, the region closest to the active side gate wiring 131 is referred to as the base region 14-e. In FIG. 13, the base region 14-e arranged at one end in the extending direction of each mesa portion is shown, but the base region 14-e is also arranged at the other end of each mesa portion. Has been done.
  • Each mesa portion may be provided with at least one of a first conductive type emitter region 12 and a second conductive type contact region 15 in a region sandwiched between base regions 14-e in a top view.
  • the emitter region 12 of this example is N + type
  • the contact region 15 is P + type.
  • the emitter region 12 and the contact region 15 may be provided between the base region 14 and the upper surface of the semiconductor substrate 10 in the depth direction.
  • the mesa portion 60 of the transistor portion 70 has an emitter region 12 exposed on the upper surface of the semiconductor substrate 10.
  • the emitter region 12 is provided in contact with the gate trench portion 40.
  • the mesa portion 60 in contact with the gate trench portion 40 may be provided with an exposed contact region 15 on the upper surface of the semiconductor substrate 10.
  • Each of the contact region 15 and the emitter region 12 in the mesa portion 60 is provided from one trench portion in the X-axis direction to the other trench portion.
  • the contact region 15 and the emitter region 12 of the mesa portion 60 are alternately arranged along the extending direction (Y-axis direction) of the trench portion.
  • the contact region 15 and the emitter region 12 of the mesa portion 60 may be provided in a stripe shape along the extending direction (Y-axis direction) of the trench portion.
  • an emitter region 12 is provided in a region in contact with the trench portion, and a contact region 15 is provided in a region sandwiched between the emitter regions 12.
  • the emitter region 12 is not provided in the mesa portion 61 of the diode portion 80.
  • a base region 14 and a contact region 15 may be provided on the upper surface of the mesa portion 61.
  • a contact region 15 may be provided in contact with the respective base regions 14-e in the region sandwiched between the base regions 14-e on the upper surface of the mesa portion 61.
  • a base region 14 may be provided in a region sandwiched between the contact regions 15 on the upper surface of the mesa portion 61.
  • the base region 14 may be arranged over the entire region sandwiched between the contact regions 15.
  • a contact hole 54 is provided above each mesa portion.
  • the contact hole 54 is arranged in a region sandwiched between the base regions 14-e.
  • the contact hole 54 of this example is provided above each region of the contact region 15, the base region 14, and the emitter region 12.
  • the contact hole 54 is not provided in the region corresponding to the base region 14-e and the well region 11.
  • the contact hole 54 may be arranged at the center of the mesa portion 60 in the arrangement direction (X-axis direction).
  • an N + type cathode region 82 is provided in a region adjacent to the lower surface of the semiconductor substrate 10.
  • a P + type collector region 22 may be provided on the lower surface of the semiconductor substrate 10 in a region where the cathode region 82 is not provided.
  • the cathode region 82 and the collector region 22 are provided between the lower surface 23 of the semiconductor substrate 10 and the buffer region 20. In FIG. 13, the boundary between the cathode region 82 and the collector region 22 is shown by a dotted line.
  • the cathode region 82 is arranged away from the well region 11 in the Y-axis direction.
  • the pressure resistance can be improved by securing the distance between the P-shaped region (well region 11) formed to a deep position and having a relatively high doping concentration and the cathode region 82.
  • the end of the cathode region 82 of this example in the Y-axis direction is located farther from the well region 11 than the end of the contact hole 54 in the Y-axis direction.
  • the end of the cathode region 82 in the Y-axis direction may be located between the well region 11 and the contact hole 54.
  • FIG. 14 is a diagram showing an example of an ee cross section in FIG.
  • the ee cross section is an XZ plane that passes through the emitter region 12 and the cathode region 82.
  • the semiconductor device 100 of this example has a semiconductor substrate 10, an interlayer insulating film 38, an emitter electrode 52, and a collector electrode 24 in the cross section.
  • the interlayer insulating film 38 is provided on the upper surface of the semiconductor substrate 10.
  • the interlayer insulating film 38 is a film containing at least one layer of an insulating film such as silicate glass to which impurities such as boron and phosphorus are added, a thermal oxide film, and other insulating films.
  • the interlayer insulating film 38 is provided with the contact hole 54 described in FIG.
  • the emitter electrode 52 is provided above the interlayer insulating film 38.
  • the emitter electrode 52 is in contact with the upper surface 21 of the semiconductor substrate 10 through the contact hole 54 of the interlayer insulating film 38.
  • the collector electrode 24 is provided on the lower surface 23 of the semiconductor substrate 10.
  • the emitter electrode 52 and the collector electrode 24 are made of a metal material such as aluminum.
  • the direction (Z-axis direction) connecting the emitter electrode 52 and the collector electrode 24 is referred to as a depth direction.
  • the semiconductor substrate 10 has an N-type or N-type drift region 18.
  • the drift region 18 is provided in each of the transistor portion 70 and the diode portion 80.
  • the mesa portion 60 of the transistor portion 70 is provided with an N + type emitter region 12 and a P-type base region 14 in order from the upper surface 21 side of the semiconductor substrate 10.
  • a drift region 18 is provided below the base region 14.
  • the mesa portion 60 may be provided with an N + type storage region 16.
  • the storage region 16 is arranged between the base region 14 and the drift region 18.
  • the emitter region 12 is exposed on the upper surface 21 of the semiconductor substrate 10 and is provided in contact with the gate trench portion 40.
  • the emitter region 12 may be in contact with the trench portions on both sides of the mesa portion 60.
  • the emitter region 12 has a higher doping concentration than the drift region 18.
  • the base region 14 is provided below the emitter region 12.
  • the base region 14 of this example is provided in contact with the emitter region 12.
  • the base region 14 may be in contact with the trench portions on both sides of the mesa portion 60.
  • the storage area 16 is provided below the base area 14.
  • the accumulation region 16 is an N + type region having a higher doping concentration than the drift region 18.
  • IE effect carrier injection promoting effect
  • the storage region 16 may be provided so as to cover the entire lower surface of the base region 14 in each mesa portion 60.
  • the mesa portion 61 of the diode portion 80 is provided with a P-type base region 14 in contact with the upper surface 21 of the semiconductor substrate 10.
  • a drift region 18 is provided below the base region 14.
  • the accumulation region 16 may be provided below the base region 14.
  • an N + type buffer region 20 may be provided below the drift region 18.
  • the doping concentration in the buffer region 20 is higher than the doping concentration in the drift region 18.
  • the buffer region 20 has a concentration peak 25 having a higher doping concentration than the drift region 18.
  • the doping concentration of the concentration peak 25 refers to the doping concentration at the apex of the concentration peak 25.
  • the average value of the doping concentrations in the region where the doping concentration distribution is substantially flat may be used as the doping concentration in the drift region 18.
  • the buffer region 20 of this example has three or more concentration peaks 25 in the depth direction (Z-axis direction) of the semiconductor substrate 10.
  • the concentration peak 25 of the buffer region 20 may be provided at the same depth position as the concentration peak of hydrogen (proton) or phosphorus, for example.
  • the buffer region 20 may function as a field stop layer that prevents the depletion layer extending from the lower end of the base region 14 from reaching the P + type collector region 22 and the N + type cathode region 82.
  • the depth position of the upper end of the buffer area 20 is Zf.
  • the depth position Zf may be a position where the doping concentration is higher than the doping concentration in the drift region 18.
  • a P + type collector region 22 is provided below the buffer region 20.
  • the acceptor concentration in the collector region 22 is higher than the acceptor concentration in the base region 14.
  • the collector region 22 may include the same acceptors as the base region 14, or may include different acceptors.
  • the acceptor of the collector region 22 is, for example, boron.
  • an N + type cathode region 82 is provided below the buffer region 20.
  • the donor concentration in the cathode region 82 is higher than the donor concentration in the drift region 18.
  • the donor of the cathode region 82 is, for example, hydrogen or phosphorus.
  • the elements that serve as donors and acceptors in each region are not limited to the above-mentioned examples.
  • the collector region 22 and the cathode region 82 are exposed on the lower surface 23 of the semiconductor substrate 10 and are connected to the collector electrode 24.
  • the collector electrode 24 may come into contact with the entire lower surface 23 of the semiconductor substrate 10.
  • the emitter electrode 52 and the collector electrode 24 are made of a metal material such as aluminum.
  • One or more gate trench portions 40 and one or more dummy trench portions 30 are provided on the upper surface 21 side of the semiconductor substrate 10. Each trench portion penetrates the base region 14 from the upper surface 21 of the semiconductor substrate 10 and reaches the drift region 18. In the region where at least one of the emitter region 12, the contact region 15 and the storage region 16 is provided, each trench portion also penetrates these doping regions and reaches the drift region 18. The penetration of the trench portion through the doping region is not limited to those manufactured in the order of forming the doping region and then forming the trench portion. Those in which a doping region is formed between the trench portions after the trench portion is formed are also included in those in which the trench portion penetrates the doping region.
  • the transistor portion 70 is provided with a gate trench portion 40 and a dummy trench portion 30.
  • the diode portion 80 is provided with a dummy trench portion 30 and is not provided with a gate trench portion 40.
  • the boundary between the diode portion 80 and the transistor portion 70 in the X-axis direction is the boundary between the cathode region 82 and the collector region 22.
  • the gate trench portion 40 has a gate trench, a gate insulating film 42, and a gate conductive portion 44 provided on the upper surface 21 of the semiconductor substrate 10.
  • the gate insulating film 42 is provided so as to cover the inner wall of the gate trench.
  • the gate insulating film 42 may be formed by oxidizing or nitriding the semiconductor on the inner wall of the gate trench.
  • the gate conductive portion 44 is provided inside the gate trench and inside the gate insulating film 42. That is, the gate insulating film 42 insulates the gate conductive portion 44 and the semiconductor substrate 10.
  • the gate conductive portion 44 is formed of a conductive material such as polysilicon.
  • the gate conductive portion 44 may be provided longer than the base region 14 in the depth direction.
  • the gate trench portion 40 in the cross section is covered with an interlayer insulating film 38 on the upper surface 21 of the semiconductor substrate 10.
  • the gate conductive portion 44 is electrically connected to the gate wiring. When a predetermined gate voltage is applied to the gate conductive portion 44, a channel due to an electron inversion layer is formed on the surface layer of the interface in the base region 14 in contact with the gate trench portion 40.
  • the dummy trench portion 30 may have the same structure as the gate trench portion 40 in the cross section.
  • the dummy trench portion 30 has a dummy trench, a dummy insulating film 32, and a dummy conductive portion 34 provided on the upper surface 21 of the semiconductor substrate 10.
  • the dummy conductive portion 34 is electrically connected to the emitter electrode 52.
  • the dummy insulating film 32 is provided so as to cover the inner wall of the dummy trench.
  • the dummy conductive portion 34 is provided inside the dummy trench and inside the dummy insulating film 32.
  • the dummy insulating film 32 insulates the dummy conductive portion 34 and the semiconductor substrate 10.
  • the dummy conductive portion 34 may be formed of the same material as the gate conductive portion 44.
  • the dummy conductive portion 34 is formed of a conductive material such as polysilicon.
  • the dummy conductive portion 34 may have the same length as the gate conductive portion 44 in the depth direction.
  • the gate trench portion 40 and the dummy trench portion 30 of this example are covered with an interlayer insulating film 38 on the upper surface 21 of the semiconductor substrate 10.
  • the bottom of the dummy trench portion 30 and the gate trench portion 40 may be curved downward (curved in cross section). In the present specification, the depth position of the lower end of the gate trench portion 40 is Zt.
  • the drift region 18 may have the same donor concentration as the donor concentration of the linear portion 214 or the hydrogen increasing portion 180 described in FIGS. 1 to 11B. That is, the drift region 18 has a donor concentration Dd mainly determined by a bulk donor concentration D0 and a hydrogen donor (VOH defect) concentration. Dopants are locally injected into regions other than the drift region 18. Therefore, the doping concentration in these regions is different from the donor concentration described in FIGS. 1 to 11B.
  • FIG. 15 is a diagram showing an example of distribution of the doping concentration Ddp and the hydrogen chemical concentration Dh on the FF line in FIG.
  • the semiconductor device 100 of this example does not have a lifetime adjusting unit.
  • the doping concentration Ddp may have a shape in which a local concentration peak in each region is superimposed on the distribution of the donor concentration Dd in any of the embodiments described in FIGS. 1 to 11B.
  • the emitter region 12 and the cathode region 82 contain an N-type dopant such as phosphorus.
  • the collector region 22 and the base region 14 contain a P-type dopant such as boron.
  • the storage region 16 contains an N-type dopant such as phosphorus or hydrogen.
  • the doping concentration in each region has a doping concentration peak corresponding to each dopant concentration peak.
  • the buffer region 20 of this example has a plurality of doping concentration peaks 25-1, 25-2, 25-3, and 25-4 in the distribution of the doping concentration Dp.
  • each doping concentration peak 25 is formed by locally injecting hydrogen ions.
  • any doping concentration peak 25 may be formed by injecting an N-type dopant such as phosphorus.
  • the distribution of the hydrogen chemical concentration Dh in this example has a plurality of local hydrogen concentration peaks 103 in the buffer region 20.
  • the half width of the hydrogen concentration peak 103 is 1/10 or less of the thickness of the semiconductor substrate 10 in the depth direction.
  • the distribution of the hydrogen chemical concentration Dh is flat or monotonously increases toward the lower surface 23, except for the region where the local hydrogen concentration peak 103 is provided.
  • the hydrogen increasing portion 180 is provided from the upper surface 21 of the semiconductor substrate 10 to the upper end position Zf of the buffer region 20.
  • the hydrogen increasing portion 180 may be provided up to the apex position of the hydrogen concentration peak 103-4 closest to the upper surface 21 among the plurality of hydrogen concentration peaks 103.
  • the upper end position Zf of the buffer region 20 may be the position of the apex of the hydrogen concentration peak 103-4 closest to the upper surface 21.
  • the hydrogen concentration peak 103-4 closest to the upper surface 21 may be the first hydrogen concentration peak 201 described in FIGS. 1 to 11B. That is, hydrogen ions may be injected from the upper surface 21 at the position of the hydrogen concentration peak 103. Hydrogen ions may be injected from the lower surface 23 at the positions of the other hydrogen concentration peaks 103.
  • the hydrogen increasing portion 180 is provided from the lower end position Zt of the gate trench portion 40 to the upper hem 203 of the hydrogen concentration peak 103-4.
  • the hydrogen increasing portion 180 may include an upper hem 203.
  • any two hydrogen concentration peaks 103 may be the first hydrogen concentration peak 201 and the second hydrogen concentration peak 206 described in FIG. 8A or FIG. 9A.
  • the two hydrogen concentration peaks 103 arranged adjacent to each other in the depth direction may be the first hydrogen concentration peak 201 and the second hydrogen concentration peak 206.
  • the hydrogen concentration peak 103-4 closest to the upper surface 21 is the second hydrogen concentration peak 206
  • the hydrogen concentration peak 103-3 closest to the upper surface 21 is the first hydrogen concentration peak. It may be 201.
  • Hydrogen ions may be injected from the lower surface 23 at the position of the second hydrogen concentration peak 206.
  • FIG. 16 is a diagram showing another distribution example of the doping concentration Ddp and the hydrogen chemical concentration Dh on the FF line in FIG.
  • the storage region 16 of this example is formed by injecting hydrogen ions. That is, the donor of the storage region 16 is a hydrogen donor.
  • Other structures may be the same as in the example of FIG. In the example of FIG. 16, the hydrogen concentration peak 103-4 corresponds to the first hydrogen concentration peak 201.
  • the distribution of the hydrogen chemical concentration Dh in this example has a second hydrogen concentration peak 206 at the depth position of the accumulation region 16. Hydrogen ions may be injected from the upper surface 21 at the position of the second hydrogen concentration peak 206. By forming the storage region 16 with a hydrogen donor, hydrogen can be diffused from the storage region 16 toward the lower surface 23. As a result, the hydrogen increasing portion 180 can be easily formed.
  • the hydrogen chemical concentration Dhi6 of the second hydrogen concentration peak 206 may be larger or smaller than the hydrogen chemical concentration Dhi4 of the hydrogen concentration peak 103-4.
  • the hydrogen increasing portion 180 is arranged between the lower end position Zt of the gate trench portion 40 and the lower surface 23 of the semiconductor substrate 10.
  • the hydrogen increasing portion 180 is arranged between the lower end position Zt of the gate trench portion 40 and the upper end position Zf of the buffer region 20.
  • the hydrogen increasing portion 180 is provided from the lower end position Zt of the gate trench portion 40 to the upper end position Zf of the buffer region 20.
  • the hydrogen increasing portion 180 may be provided from the lower end position of the storage region 16 to the upper end position Zf of the buffer region 20.
  • the lower end position of the storage region 16 is a position where the hydrogen chemical concentration Dh starts to increase from the lower hem 207 toward the lower surface 23.
  • FIG. 17 is a diagram showing another example of the ee cross section in FIG.
  • the semiconductor device 100 of this example has a lifetime adjusting unit 230 on the upper side of the buffer region 20.
  • Other structures are similar to the example of FIG.
  • the lifetime adjusting unit 230 may have the structure described in FIG. 11A.
  • the lifetime adjusting unit 230 of this example may be arranged in contact with the hydrogen concentration peak 103-4 (see FIG. 15 and the like) arranged on the uppermost surface 21 side in the buffer region 20.
  • the hydrogen concentration peak 103-4 may be the second hydrogen concentration peak 206 described in FIG. 11A.
  • FIG. 18 is a diagram showing an example of a manufacturing method of the semiconductor device 100.
  • the manufacturing method of this example includes an upper surface side structure forming step S1800, a first hydrogen injection step S1802, a grinding step S1804, a lower surface side structure forming step S1806, a heat treatment step S1808, and an electrode forming step S1810.
  • the structure on the upper surface 21 side of the semiconductor substrate 10 is formed among the structures of the semiconductor device 100.
  • the semiconductor substrate 10 in the upper surface side structure forming step S1800 is a substrate before grinding having a lower surface 19 (see FIG. 1).
  • the structure on the upper surface 21 side includes, for example, a base region 14, an emitter region 12, a storage region 16, a gate trench portion 40, a dummy trench portion 30, a well region 11, an emitter electrode 52, an interlayer insulating film 38, a gate wiring, and the like. ..
  • the semiconductor substrate 10 in the first hydrogen injection step S1802 is a substrate before grinding having a lower surface 19.
  • the first injection position Zi1 is arranged below the central Zc in the depth direction of the semiconductor substrate after the grinding step S1804. As described in FIG. 2 and the like, the first injection position Zi1 may be arranged in the vicinity of the lower surface 23 after grinding.
  • the first injection position Zi1 may be any position described in FIGS. 1 to 17.
  • the dose amount of hydrogen ions in the first hydrogen injection step S1802 is 1 ⁇ 10 13 ions / cm 2 or more and 1 ⁇ 10 14 ions / cm 2 or less.
  • a lattice defect is formed in the passing region from the upper surface 21 to the first injection position Zi1.
  • the lower surface 19 of the semiconductor substrate 10 is ground to remove a part of the region where hydrogen is present.
  • the position of the lower surface 23 after grinding may be the same as any of the examples described with reference to FIGS. 1 to 17.
  • the portion from the lower surface 19 to the position beyond the first injection position Zi1 is removed.
  • the structure on the lower surface 23 side of the semiconductor substrate 10 is formed.
  • the structure on the lower surface 23 side includes, for example, a collector region 22, a cathode region 82, a buffer region 20, and the like.
  • local annealing may be performed by laser annealing.
  • the oxide film such as the gate insulating film 42 shown in FIG. 17 may be formed by thermal oxidation at a high temperature of about 1000 ° C. Therefore, it is preferable that the first hydrogen injection step S1802 is performed after the thermal oxidation step.
  • the semiconductor substrate 10 is heat-treated in the heat treatment step S1808 to form a hydrogen donor (VOH defect).
  • the semiconductor substrate 10 may be put into a heat treatment furnace to heat the entire semiconductor substrate 10.
  • the heat treatment is performed under conditions that can diffuse hydrogen and promote the formation of hydrogen donors.
  • heat treatment may be performed at a temperature of 350 ° C. or higher and 380 ° C. or lower for a period of 3 hours or longer and 10 hours or lower.
  • a hydrogen donor can be formed in the hydrogen ion passing region to adjust the donor concentration and resistivity in the passing region.
  • the concentration of the formed hydrogen donor can be accurately controlled by the dose amount of hydrogen ions in the first hydrogen injection step S1802. Therefore, the donor concentration and resistivity in the passing region can be controlled accurately. Therefore, it is possible to suppress variations in the characteristics of the semiconductor device 100, particularly the withstand voltage.
  • the collector electrode 24 is formed.
  • the steps S1800 to S1810 may be performed using a semiconductor substrate in a wafer state. In this case, after S1810, the wafer may be fragmented to manufacture the semiconductor device 100 in a chip state.
  • FIG. 19 is a diagram showing another example of a method for manufacturing the semiconductor device 100.
  • the timing of performing the heat treatment step S1808 is different from the example of FIG.
  • Other steps are the same as in the example of FIG.
  • the heat treatment step S1808 is performed after the first hydrogen injection step S1802 and before the grinding step S1804. That is, a hydrogen donor is formed before the grinding step S1804.
  • the heat treatment conditions in the heat treatment step S1808 may be the same as those in the example of FIG.
  • the semiconductor device 100 can also be manufactured by such a process.
  • FIG. 20 is a diagram showing another example of the manufacturing method of the semiconductor device 100.
  • the production method of this example further includes a second hydrogen injection step S2000 in the step shown in FIG. 18 after the upper surface side structure forming step S1800 and before the heat treatment S1808.
  • Other steps are the same as in the example of FIG.
  • the second hydrogen injection step S2000 hydrogen ions are injected from the upper surface 21 or the lower surface 23 of the semiconductor substrate 10 into the predetermined second injection position Zi2 inside the semiconductor substrate 10.
  • the second injection position Zi2 may be any of the positions described in FIGS. 1 to 17.
  • the first hydrogen concentration peak 201 of the hydrogen injected in the first hydrogen injection step S1802 and the second hydrogen concentration peak 206 of the hydrogen injected in the second hydrogen injection step S2000 overlap each other.
  • Hydrogen may be injected into the second injection position Zi2.
  • the second hydrogen injection step S2000 may be performed before or after the grinding step S1804.
  • the second hydrogen injection step S2000 may be performed before or after the first hydrogen injection step S1802.
  • the second hydrogen injection step S2000 is performed between the first hydrogen injection step S1802 and the grinding step S1804.
  • the range of hydrogen ions in the second hydrogen injection step S2000 may be shorter than the range of hydrogen ions in the first hydrogen injection step S1802.
  • the acceleration energy of hydrogen ions in the second hydrogen injection step S2000 may be lower than the acceleration energy of hydrogen ions in the first hydrogen injection step S1802. As a result, the density of lattice defects formed in the vicinity of the second injection position Zi2 can be reduced.
  • the dose amount of hydrogen ions in the second hydrogen injection step S2000 is 1 ⁇ 10 13 ions / cm 2 or more and 1 ⁇ 10 15 ions / cm 2 or less.
  • the dose amount of hydrogen ions in the second hydrogen injection step S2000 may be larger than the dose amount of hydrogen ions in the first hydrogen injection step S1802. As a result, a large amount of hydrogen for forming a hydrogen donor can be supplied.
  • the grinding step S1804 is performed after the second hydrogen injection step S2000.
  • the semiconductor substrate 10 may be ground to any position described with reference to FIGS. 1 to 17.
  • the region including the second injection position Zi2 may be removed.
  • the second injection position Zi2 may be arranged in a region that is not ground in the grinding step S1804.
  • the region including the first injection position Zi1 may be removed.
  • the first injection position Zi1 may be arranged in a region that is not ground in the grinding step S1804.
  • the lower surface side structure forming step S1806, the heat treatment step S1808, and the electrode forming step S1810 are performed. As a result, the semiconductor device 100 can be manufactured.
  • FIG. 21 is a diagram showing another example of the manufacturing method of the semiconductor device 100.
  • the timing of performing the heat treatment step S1808 is different from the example of FIG.
  • Other steps are the same as in the example of FIG.
  • the heat treatment step S1808 is performed after the first hydrogen injection step S1802 and the second hydrogen injection step S2000 and before the grinding step S1804. That is, a hydrogen donor is formed before the grinding step S1804.
  • the heat treatment conditions in the heat treatment step S1808 may be the same as those in the example of FIG.
  • the semiconductor device 100 can also be manufactured by such a process.
  • the grinding step S1804 may be performed between the first hydrogen injection step S1802 and the second hydrogen injection step S2000.
  • the acceleration energy of the hydrogen ions in the second hydrogen injection step S2000 can be lowered by performing the grinding step S1804 first. As a result, damage to the semiconductor substrate 10 can be suppressed.
  • each hydrogen injection step and the heat treatment step S1808 may be performed. Further, the heat treatment step S1808 may be performed in the middle of the lower surface structure forming step S1806. Further, each hydrogen injection step may be included in the upper surface side structure forming step S1800 or the lower surface side structure forming step S1806. As described with reference to FIG. 15 and the like, each hydrogen injection step may be performed in the step of forming the buffer region 20. As described with reference to FIG. 16 and the like, the second hydrogen injection step S2000 may be performed in the step of forming the storage region 16.
  • FIG. 22 is a cross-sectional view showing another example of the semiconductor device 100.
  • the semiconductor device 100 of this example is different from the semiconductor device 100 described in FIGS. 1 to 21 in that it is formed by injecting hydrogen ions into the first injection position Zi1 after grinding the semiconductor substrate 10.
  • the semiconductor device 100 of this example is similar to any of the semiconductor devices 100 described in FIGS. 1 to 21.
  • the structure of the semiconductor device 100 of this example may be the same as that of the semiconductor device 100 described with reference to FIGS. 1 to 21.
  • the ground semiconductor substrate 10 has an upper surface 21 and a lower surface 23.
  • hydrogen ions are injected from the upper surface 21 to the first injection position Zi1.
  • the first injection position Zi1 is a position outside the semiconductor substrate 10 and a position below the lower surface 23 of the semiconductor substrate 10.
  • the first injection position Zi1 may be a position within the region where the semiconductor substrate has been ground and removed.
  • the distance between the depth position Z2 of the lower surface 23 and the first injection position Zi1 may be the same as or different from any of the examples described in FIGS. 1 to 21.
  • the acceleration energy when hydrogen ions are injected into the first injection position Zi1 may be the same as or different from any of the examples described in FIGS. 1 to 21.
  • the donor concentration of the semiconductor substrate 10 can be controlled with high accuracy.
  • FIG. 23 shows an example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the GG line in FIG. 22.
  • the distribution inside the semiconductor substrate 10 is shown by a solid line, and the virtual distribution outside the semiconductor substrate 10 is shown by a broken line.
  • the virtual distribution is a concentration distribution assuming that the semiconductor substrate 10 also exists in the region.
  • the apex of the first hydrogen concentration peak 201 having a hydrogen chemical concentration Dh is arranged below the lower surface 23 of the semiconductor substrate 10. That is, the first injection position Zi1 is arranged below the depth position Z2.
  • the distance between the first injection position Zi1 and the depth position Z2 is smaller than the full width at half maximum FWHM of the first hydrogen concentration peak 201.
  • the distance between the first injection position Zi1 and the depth position Z2 may be 1 time or more, 5 times or more, and 10 times or more the half-value full width FWHM of the first hydrogen concentration peak 201. It may be.
  • the distance between two points where the hydrogen chemical concentration is 1% of the peak concentration Dhi1 on both sides of the apex of the first hydrogen concentration peak 201 is defined as FW1% M.
  • the distance between the first injection position Zi1 and the depth position Z2 may be 1 time or more, 5 times or more, or 10 times or more the FW 1% M.
  • At least one of a transistor and a diode may be formed as described in FIGS. 12 to 21.
  • the semiconductor device 100 of this example may also have each concentration distribution shown in FIG. 15 or FIG.
  • FIG. 24 is a diagram showing another example of the manufacturing method of the semiconductor device 100.
  • the manufacturing method of this example is different from the example of FIG. 18 in that the order of the grinding step S1804 and the first hydrogen injection step S1802 is switched.
  • Other steps are similar to the example in FIG.
  • the grinding step S1804 may be performed before the first hydrogen injection step S1802 as in this example.
  • FIG. 25 is a cross-sectional view showing an example of the semiconductor device 100.
  • the first injection position Zi1 is further outside the semiconductor substrate 10 than the position Z3 of the lower surface 19 before grinding the semiconductor substrate 10, according to the example described in FIGS. 1 to 24.
  • -It differs in that it is located on the Z-axis side).
  • the semiconductor device 100 of this example is similar to any of the semiconductor devices 100 described in FIGS. 1 to 24.
  • FIG. 26 shows an example of the distribution of the hydrogen chemical concentration Dh in the depth direction, the distribution of the donor concentration Dd, and the distribution of the bulk donor concentration D0 at the positions shown by the HH line in FIG. 25. It differs from FIG. 2 in that the position Z3 of the lower surface 19 of the semiconductor substrate 10 before grinding is located on the upper surface 21 side of the first hydrogen concentration peak 201. The position Z3 of the lower surface 19 may be located closer to the upper surface 21 than the upper hem 203. The position Z3 of the lower surface 19 may be located closer to the upper surface 21 than the connecting portion 205.
  • the first hydrogen concentration peak 201 is not formed on the semiconductor substrate 10.
  • a known simulation technique may be used to set the position Zi1 of the first hydrogen concentration peak 201 and the acceleration energy of hydrogen ion implantation in advance, and calculate the distribution of the hydrogen chemical concentration Dh, the distribution of the donor concentration Dd, and the like.
  • the hydrogen chemical concentration Dh2 on the lower surface 23 may be 1.2 times or more, 1.5 times or more, or twice or more the hydrogen chemical concentration Dh1 on the upper surface 21.
  • the hydrogen chemical concentration Dh2 on the lower surface 23 may be 10 times or less, 5 times or less, or 3 times or less the hydrogen chemical concentration Dh1 on the upper surface 21.
  • Hydrogen ions may be injected before grinding the semiconductor substrate 10 or after grinding. Further, the manufacturing method of this example may be the same as that of any of FIGS. 18 to 21 and 24, and the order of each step may be changed as appropriate.

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