JPWO2021075540A1 - - Google Patents
Info
- Publication number
- JPWO2021075540A1 JPWO2021075540A1 JP2021552462A JP2021552462A JPWO2021075540A1 JP WO2021075540 A1 JPWO2021075540 A1 JP WO2021075540A1 JP 2021552462 A JP2021552462 A JP 2021552462A JP 2021552462 A JP2021552462 A JP 2021552462A JP WO2021075540 A1 JPWO2021075540 A1 JP WO2021075540A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0172—Manufacturing their gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0188—Manufacturing their isolation regions
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019191324 | 2019-10-18 | ||
| JP2019191324 | 2019-10-18 | ||
| PCT/JP2020/039062 WO2021075540A1 (ja) | 2019-10-18 | 2020-10-16 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021075540A1 true JPWO2021075540A1 (https=) | 2021-04-22 |
| JP7640861B2 JP7640861B2 (ja) | 2025-03-06 |
Family
ID=75538092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021552462A Active JP7640861B2 (ja) | 2019-10-18 | 2020-10-16 | 半導体集積回路装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12249637B2 (https=) |
| JP (1) | JP7640861B2 (https=) |
| WO (1) | WO2021075540A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7640861B2 (ja) * | 2019-10-18 | 2025-03-06 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| US12464813B2 (en) * | 2021-10-19 | 2025-11-04 | International Business Machines Corporation | Semiconductor device having hybrid middle of line contacts |
| US12426338B2 (en) | 2021-10-27 | 2025-09-23 | International Business Machines Corporation | Buried power rail with robust connection to a wrap around contact |
| EP4199052B1 (en) * | 2021-12-17 | 2024-08-21 | IMEC vzw | Metallization scheme for an integrated circuit |
| WO2023209971A1 (ja) * | 2022-04-28 | 2023-11-02 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2025126580A1 (ja) * | 2023-12-14 | 2025-06-19 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2025126579A1 (ja) * | 2023-12-14 | 2025-06-19 | 株式会社ソシオネクスト | 半導体集積回路装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160118480A1 (en) * | 2014-10-28 | 2016-04-28 | Globalfoundries Inc. | Methods of forming a tri-gate finfet device and the resulting device |
| US20170033102A1 (en) * | 2015-07-30 | 2017-02-02 | Samsung Electronics Co., Ltd. | Semiconductor Device |
| WO2018030107A1 (ja) * | 2016-08-08 | 2018-02-15 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2021048995A1 (ja) * | 2019-09-13 | 2021-03-18 | 株式会社日立ハイテク | 半導体装置の製造方法及びプラズマ処理装置 |
Family Cites Families (55)
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|---|---|---|---|---|
| US8653596B2 (en) * | 2012-01-06 | 2014-02-18 | International Business Machines Corporation | Integrated circuit including DRAM and SRAM/logic |
| KR101937851B1 (ko) * | 2012-06-27 | 2019-04-10 | 삼성전자 주식회사 | 반도체 집적 회로, 그 설계 방법 및 제조방법 |
| US8836040B2 (en) * | 2012-11-07 | 2014-09-16 | Qualcomm Incorporated | Shared-diffusion standard cell architecture |
| JP6003961B2 (ja) * | 2014-11-04 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置 |
| CN109314080B (zh) * | 2016-07-01 | 2022-09-30 | 株式会社索思未来 | 半导体集成电路装置 |
| US10453850B2 (en) * | 2016-07-19 | 2019-10-22 | Tokyo Electron Limited | Three-dimensional semiconductor device including integrated circuit, transistors and transistor components and method of fabrication |
| JP6974743B2 (ja) * | 2016-08-01 | 2021-12-01 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2018042986A1 (ja) * | 2016-08-29 | 2018-03-08 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP7032668B2 (ja) * | 2018-01-12 | 2022-03-09 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP7125628B2 (ja) * | 2018-03-01 | 2022-08-25 | 株式会社ソシオネクスト | 半導体装置 |
| US10748901B2 (en) * | 2018-10-22 | 2020-08-18 | International Business Machines Corporation | Interlayer via contacts for monolithic three-dimensional semiconductor integrated circuit devices |
| US10985161B2 (en) * | 2019-05-31 | 2021-04-20 | International Business Machines Corporation | Single diffusion break isolation for gate-all-around field-effect transistor devices |
| US10950610B2 (en) * | 2019-07-18 | 2021-03-16 | Globalfoundries U.S. Inc. | Asymmetric gate cut isolation for SRAM |
| US11114345B2 (en) * | 2019-08-22 | 2021-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | IC including standard cells and SRAM cells |
| US11393815B2 (en) * | 2019-08-30 | 2022-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistors with varying width nanosheet |
| CN114467175B (zh) * | 2019-10-02 | 2025-04-29 | 株式会社索思未来 | 半导体集成电路装置及半导体集成电路装置的制造方法 |
| JP7610128B2 (ja) * | 2019-10-18 | 2025-01-08 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2021075353A1 (ja) * | 2019-10-18 | 2021-04-22 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP7640861B2 (ja) * | 2019-10-18 | 2025-03-06 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2021125094A1 (ja) * | 2019-12-19 | 2021-06-24 | 株式会社ソシオネクスト | 半導体記憶装置 |
| CN114868242B (zh) * | 2019-12-20 | 2024-11-12 | 株式会社索思未来 | 半导体存储装置 |
| JP7730024B2 (ja) * | 2020-01-27 | 2025-08-27 | 株式会社ソシオネクスト | 半導体記憶装置 |
| CN115066752B (zh) * | 2020-02-19 | 2025-06-03 | 株式会社索思未来 | 半导体存储装置 |
| CN115136296B (zh) * | 2020-02-25 | 2025-07-08 | 株式会社索思未来 | 半导体集成电路装置 |
| JP7667464B2 (ja) * | 2020-03-11 | 2025-04-23 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| CN115552604A (zh) * | 2020-05-14 | 2022-12-30 | 株式会社索思未来 | 半导体装置及其制造方法 |
| US11398480B2 (en) * | 2020-05-15 | 2022-07-26 | International Business Machines Corporation | Transistor having forked nanosheets with wraparound contacts |
| JP7799195B2 (ja) * | 2020-12-25 | 2026-01-15 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP7600701B2 (ja) * | 2021-01-19 | 2024-12-17 | 株式会社ソシオネクスト | 半導体装置 |
| JP7635557B2 (ja) * | 2021-01-19 | 2025-02-26 | 株式会社ソシオネクスト | 半導体装置 |
| CN116830257A (zh) * | 2021-02-15 | 2023-09-29 | 株式会社索思未来 | 半导体集成电路装置 |
| WO2022186012A1 (ja) * | 2021-03-05 | 2022-09-09 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| US12464812B2 (en) * | 2021-04-08 | 2025-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure including forksheet transistors and methods of forming the same |
| WO2022224847A1 (ja) * | 2021-04-22 | 2022-10-27 | 株式会社ソシオネクスト | 出力回路 |
| WO2022239681A1 (ja) * | 2021-05-12 | 2022-11-17 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| US12170322B2 (en) * | 2021-05-14 | 2024-12-17 | Samsung Electronics Co., Ltd. | Devices including stacked nanosheet transistors |
| EP4338208A1 (en) * | 2021-06-08 | 2024-03-20 | Huawei Technologies Co., Ltd. | Semiconductor architecture and method of manufacturing semiconductor architecture |
| US12002808B2 (en) * | 2021-08-09 | 2024-06-04 | International Business Machines Corporation | Dual dielectric pillar fork sheet device |
| US11855078B2 (en) * | 2021-08-27 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure including forksheet transistors and methods of forming the same |
| US12324234B2 (en) * | 2021-09-17 | 2025-06-03 | International Business Machines Corporation | Fork sheet device with better electrostatic control |
| JPWO2023053203A1 (https=) * | 2021-09-28 | 2023-04-06 | ||
| JPWO2023095616A1 (https=) * | 2021-11-29 | 2023-06-01 | ||
| US12268031B2 (en) * | 2021-12-27 | 2025-04-01 | International Business Machines Corporation | Backside power rails and power distribution network for density scaling |
| US20230207563A1 (en) * | 2021-12-29 | 2023-06-29 | International Business Machines Corporation | Gate all around complementary metal-oxide-semiconductor field effect transistors |
| WO2023132264A1 (ja) * | 2022-01-06 | 2023-07-13 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP2023119368A (ja) * | 2022-02-16 | 2023-08-28 | 株式会社ソシオネクスト | 半導体記憶装置 |
| WO2023157724A1 (ja) * | 2022-02-16 | 2023-08-24 | 株式会社ソシオネクスト | 半導体記憶装置 |
| WO2023157754A1 (ja) * | 2022-02-17 | 2023-08-24 | 株式会社ソシオネクスト | 半導体記憶装置 |
| JPWO2023167083A1 (https=) * | 2022-03-02 | 2023-09-07 | ||
| US20240170331A1 (en) * | 2022-11-22 | 2024-05-23 | International Business Machines Corporation | Forksheet field effect transistor including self-aligned gate |
| JPWO2024135324A1 (https=) * | 2022-12-22 | 2024-06-27 | ||
| WO2024162070A1 (ja) * | 2023-01-31 | 2024-08-08 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2024162046A1 (ja) * | 2023-01-31 | 2024-08-08 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JPWO2024162047A1 (https=) * | 2023-01-31 | 2024-08-08 | ||
| KR20240142209A (ko) * | 2023-03-21 | 2024-09-30 | 삼성전자주식회사 | 적층형 집적회로 소자 |
-
2020
- 2020-10-16 JP JP2021552462A patent/JP7640861B2/ja active Active
- 2020-10-16 WO PCT/JP2020/039062 patent/WO2021075540A1/ja not_active Ceased
-
2022
- 2022-03-28 US US17/706,177 patent/US12249637B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160118480A1 (en) * | 2014-10-28 | 2016-04-28 | Globalfoundries Inc. | Methods of forming a tri-gate finfet device and the resulting device |
| US20170033102A1 (en) * | 2015-07-30 | 2017-02-02 | Samsung Electronics Co., Ltd. | Semiconductor Device |
| WO2018030107A1 (ja) * | 2016-08-08 | 2018-02-15 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| WO2021048995A1 (ja) * | 2019-09-13 | 2021-03-18 | 株式会社日立ハイテク | 半導体装置の製造方法及びプラズマ処理装置 |
Non-Patent Citations (1)
| Title |
|---|
| P. WECKX ET AL.: "Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3 nm", 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), JPN6020049832, 5 December 2017 (2017-12-05), US, pages 20 - 5, ISSN: 0005437982 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7640861B2 (ja) | 2025-03-06 |
| US12249637B2 (en) | 2025-03-11 |
| WO2021075540A1 (ja) | 2021-04-22 |
| US20220216319A1 (en) | 2022-07-07 |
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