JPWO2021030432A5 - - Google Patents

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JPWO2021030432A5
JPWO2021030432A5 JP2022508878A JP2022508878A JPWO2021030432A5 JP WO2021030432 A5 JPWO2021030432 A5 JP WO2021030432A5 JP 2022508878 A JP2022508878 A JP 2022508878A JP 2022508878 A JP2022508878 A JP 2022508878A JP WO2021030432 A5 JPWO2021030432 A5 JP WO2021030432A5
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Japan
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nanostructure
znse
source
shell
reaction mixture
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JP2022508878A
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Japanese (ja)
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JP7720033B2 (ja
JP2022544773A5 (https=
JP2022544773A (ja
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Priority claimed from PCT/US2020/045925 external-priority patent/WO2021030432A1/en
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JP2022508878A 2019-08-12 2020-08-12 狭い半値全幅を有する青色発光ZnSe1-xTex合金ナノ結晶の合成 Active JP7720033B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962885469P 2019-08-12 2019-08-12
US62/885,469 2019-08-12
PCT/US2020/045925 WO2021030432A1 (en) 2019-08-12 2020-08-12 SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM

Publications (4)

Publication Number Publication Date
JP2022544773A JP2022544773A (ja) 2022-10-21
JPWO2021030432A5 true JPWO2021030432A5 (https=) 2023-10-04
JP2022544773A5 JP2022544773A5 (https=) 2023-10-04
JP7720033B2 JP7720033B2 (ja) 2025-08-07

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JP2022508878A Active JP7720033B2 (ja) 2019-08-12 2020-08-12 狭い半値全幅を有する青色発光ZnSe1-xTex合金ナノ結晶の合成

Country Status (5)

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US (3) US11499097B2 (https=)
JP (1) JP7720033B2 (https=)
KR (1) KR102871616B1 (https=)
CN (1) CN114867818B (https=)
WO (1) WO2021030432A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102787776B1 (ko) * 2019-09-20 2025-03-31 도판 홀딩스 가부시키가이샤 양자점 및, 그 제조 방법
JP7586284B2 (ja) 2021-02-26 2024-11-19 Toppanホールディングス株式会社 量子ドットの製造方法、及び、量子ドット
US20230174861A1 (en) * 2021-12-03 2023-06-08 Applied Materials, Inc. Narrowband quantum dots and methods of making them
KR20260037168A (ko) 2022-01-19 2026-03-17 소에이 가가쿠 고교 가부시키가이샤 Uv-경화성 양자 도트 제형
US20250215309A1 (en) 2022-03-25 2025-07-03 Shoei Chemical Inc. Silica composite microparticles comprising nanostructures
EP4652236A1 (en) * 2023-12-20 2025-11-26 Qna Technology Spolka Akcyjna Method for producing znse cores, method for producing tellurium-doped znse(te) cores and method for producing znse(te)/znse/zns quantum dots emitting light in the blue range

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
EP1537187B1 (en) 2002-09-05 2012-08-15 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
EP1537445B1 (en) 2002-09-05 2012-08-01 Nanosys, Inc. Nanocomposites
KR100657891B1 (ko) 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
WO2005067485A2 (en) * 2003-12-12 2005-07-28 Quantum Dot Corporation Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
CN102064102B (zh) 2004-06-08 2013-10-30 桑迪士克公司 形成单层纳米结构的方法和器件以及包含这种单层的器件
WO2008063652A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2010040032A2 (en) 2008-10-03 2010-04-08 Life Technologies Corporation Methods for preparation of znte nanocrystals
CN104387772B (zh) 2009-05-01 2017-07-11 纳米系统公司 用于纳米结构体分散的官能化基质
JP5805769B2 (ja) 2010-09-16 2015-11-10 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッドYissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. 異方性半導体ナノ粒子
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
KR102203599B1 (ko) 2013-03-14 2021-01-14 나노시스, 인크. 무용매 양자점 교환 방법
EP2853578B1 (en) * 2013-09-26 2017-08-30 Samsung Electronics Co., Ltd Nanocrystal particles and processes for synthesizing the same
KR102446858B1 (ko) 2015-08-07 2022-09-23 삼성디스플레이 주식회사 양자점 제조 방법
KR20180052679A (ko) 2015-09-09 2018-05-18 나노시스, 인크. 청색 방출을 갖는 고 발광 무카드뮴 나노결정
KR102474201B1 (ko) 2015-11-26 2022-12-06 삼성디스플레이 주식회사 양자점 컬러 필터 및 이를 구비하는 표시 장치
US20170352779A1 (en) * 2016-06-07 2017-12-07 Sharp Kabushiki Kaisha Nanoparticle phosphor element and light emitting element
JP2018115315A (ja) 2017-01-18 2018-07-26 三菱マテリアル株式会社 可視蛍光を発するCdを含まないコロイダル量子ドット及びその製造方法
EP3401380B1 (en) * 2017-05-11 2020-12-23 Samsung Electronics Co., Ltd. Semiconductor nanocrystal particles and devices including the same
EP3660127A4 (en) * 2017-07-27 2021-03-31 NS Materials Inc. QUANTUM POINT, WAVELENGTH CONVERSION ELEMENT WITH QUANTUM POINT, LIGHTING ELEMENT, BACKLIGHTING DEVICE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING QUANTUM POINTS
KR102395049B1 (ko) * 2017-10-25 2022-05-04 삼성전자주식회사 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자
EP3530713B1 (en) * 2018-02-21 2025-04-02 Samsung Electronics Co., Ltd. Semiconductor nanocrystal particles, production methods thereof, and devices including the same
CN110246975B (zh) * 2018-03-09 2024-04-09 三星电子株式会社 电致发光显示装置
KR102718276B1 (ko) * 2018-03-09 2024-10-16 삼성전자주식회사 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자
EP3536762B1 (en) 2018-03-09 2021-05-05 Samsung Electronics Co., Ltd. Quantum dots and devices including the same
EP3844240B1 (en) 2018-05-30 2024-02-14 Shoei Chemical Inc. Method for synthesis of blue-emitting znse1-xtex alloy nanocrystals

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