KR102871616B1 - 반치전폭이 낮은 청색 방출 ZnSe1-xTex 합금 나노결정의 합성 - Google Patents

반치전폭이 낮은 청색 방출 ZnSe1-xTex 합금 나노결정의 합성

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KR102871616B1
KR102871616B1 KR1020227007244A KR20227007244A KR102871616B1 KR 102871616 B1 KR102871616 B1 KR 102871616B1 KR 1020227007244 A KR1020227007244 A KR 1020227007244A KR 20227007244 A KR20227007244 A KR 20227007244A KR 102871616 B1 KR102871616 B1 KR 102871616B1
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nanostructure
zinc
shell
minutes
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KR20220044989A (ko
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벤자민 뉴메이어
크리스찬 이펜
뤼칭 마
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소에이 가가쿠 고교 가부시키가이샤
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
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    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
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    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
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    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020227007244A 2019-08-12 2020-08-12 반치전폭이 낮은 청색 방출 ZnSe1-xTex 합금 나노결정의 합성 Active KR102871616B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962885469P 2019-08-12 2019-08-12
US62/885,469 2019-08-12
PCT/US2020/045925 WO2021030432A1 (en) 2019-08-12 2020-08-12 SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM

Publications (2)

Publication Number Publication Date
KR20220044989A KR20220044989A (ko) 2022-04-12
KR102871616B1 true KR102871616B1 (ko) 2025-10-15

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US (3) US11499097B2 (https=)
JP (1) JP7720033B2 (https=)
KR (1) KR102871616B1 (https=)
CN (1) CN114867818B (https=)
WO (1) WO2021030432A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021054355A1 (ja) * 2019-09-20 2021-03-25 Ｎｓマテリアルズ株式会社 量子ドット及び、その製造方法
WO2022181752A1 (ja) * 2021-02-26 2022-09-01 Ｎｓマテリアルズ株式会社 量子ドットの製造方法、及び、量子ドット
US20230174861A1 (en) * 2021-12-03 2023-06-08 Applied Materials, Inc. Narrowband quantum dots and methods of making them
KR20260037168A (ko) 2022-01-19 2026-03-17 소에이 가가쿠 고교 가부시키가이샤 Uv-경화성 양자 도트 제형
KR20240162142A (ko) 2022-03-25 2024-11-14 소에이 가가쿠 고교 가부시키가이샤 나노구조체를 포함하는 실리카 복합 마이크로입자
EP4652236A1 (en) * 2023-12-20 2025-11-26 Qna Technology Spolka Akcyjna Method for producing znse cores, method for producing tellurium-doped znse(te) cores and method for producing znse(te)/znse/zns quantum dots emitting light in the blue range

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214536A1 (en) 2003-12-12 2005-09-29 Quantum Dot Corporation Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties
WO2010040032A2 (en) 2008-10-03 2010-04-08 Life Technologies Corporation Methods for preparation of znte nanocrystals

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6949206B2 (en) 2002-09-05 2005-09-27 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
AU2003268487A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanocomposites
KR100657891B1 (ko) 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
CN102064102B (zh) 2004-06-08 2013-10-30 桑迪士克公司 形成单层纳米结构的方法和器件以及包含这种单层的器件
WO2008063652A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2010126606A2 (en) 2009-05-01 2010-11-04 Nanosys, Inc. Functionalized matrixes for dispersion of nanostructures
KR101978691B1 (ko) 2010-09-16 2019-05-15 이섬 리서치 디벨러프먼트 컴파니 오브 더 히브루 유니버시 티 오브 예루살렘 엘티디. 이방성 반도체 나노입자
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
JP6250785B2 (ja) 2013-03-14 2017-12-20 ナノシス・インク． 無溶媒量子ドット交換方法
EP2853578B1 (en) * 2013-09-26 2017-08-30 Samsung Electronics Co., Ltd Nanocrystal particles and processes for synthesizing the same
KR102446858B1 (ko) * 2015-08-07 2022-09-23 삼성디스플레이 주식회사 양자점 제조 방법
EP3347433A1 (en) 2015-09-09 2018-07-18 Nanosys, Inc. Highly luminescent cadmium-free nanocrystals with blue emission
KR102474201B1 (ko) 2015-11-26 2022-12-06 삼성디스플레이 주식회사 양자점 컬러 필터 및 이를 구비하는 표시 장치
US20170352779A1 (en) * 2016-06-07 2017-12-07 Sharp Kabushiki Kaisha Nanoparticle phosphor element and light emitting element
JP2018115315A (ja) 2017-01-18 2018-07-26 三菱マテリアル株式会社 可視蛍光を発するＣｄを含まないコロイダル量子ドット及びその製造方法
EP3401380B1 (en) * 2017-05-11 2020-12-23 Samsung Electronics Co., Ltd. Semiconductor nanocrystal particles and devices including the same
KR20260033623A (ko) * 2017-07-27 2026-03-10 도판 홀딩스 가부시키가이샤 양자점 및, 양자점을 이용한 파장 변환 부재, 조명 부재, 백라이트 장치, 표시 장치, 및, 양자점의 제조 방법
KR102395049B1 (ko) * 2017-10-25 2022-05-04 삼성전자주식회사 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자
EP3530713B1 (en) * 2018-02-21 2025-04-02 Samsung Electronics Co., Ltd. Semiconductor nanocrystal particles, production methods thereof, and devices including the same
CN110240896B (zh) * 2018-03-09 2024-03-05 三星电子株式会社 量子点以及包括其的电致发光器件和电子器件
KR102649299B1 (ko) * 2018-03-09 2024-03-19 삼성전자주식회사 전계발광 표시 장치
US11011720B2 (en) * 2018-03-09 2021-05-18 Samsung Electronics Co., Ltd. Semiconductor nanocrystal particles, production methods thereof, and devices including the same
EP3844240B1 (en) * 2018-05-30 2024-02-14 Shoei Chemical Inc. Method for synthesis of blue-emitting znse1-xtex alloy nanocrystals

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214536A1 (en) 2003-12-12 2005-09-29 Quantum Dot Corporation Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties
WO2010040032A2 (en) 2008-10-03 2010-04-08 Life Technologies Corporation Methods for preparation of znte nanocrystals

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Robert E. Bailey and Shuming Nie, J. AM. CHEM. SOC. 2003, 125권, 7100-7106쪽

Also Published As

Publication number Publication date
US11499097B2 (en) 2022-11-15
KR20220044989A (ko) 2022-04-12
US20210047563A1 (en) 2021-02-18
CN114867818B (zh) 2024-12-03
US20230235224A1 (en) 2023-07-27
US12163079B2 (en) 2024-12-10
JP7720033B2 (ja) 2025-08-07
US20250059441A1 (en) 2025-02-20
WO2021030432A1 (en) 2021-02-18
JP2022544773A (ja) 2022-10-21
CN114867818A (zh) 2022-08-05

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