CN114867818B - 具有低半峰全宽的蓝光发射ZnSe1-xTex合金纳米晶体的合成 - Google Patents

具有低半峰全宽的蓝光发射ZnSe1-xTex合金纳米晶体的合成 Download PDF

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CN114867818B
CN114867818B CN202080068876.3A CN202080068876A CN114867818B CN 114867818 B CN114867818 B CN 114867818B CN 202080068876 A CN202080068876 A CN 202080068876A CN 114867818 B CN114867818 B CN 114867818B
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zinc
selenide
source
nanostructure
trioctylphosphine
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CN114867818A (zh
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B·纽梅耶尔
C·伊彭
马瑞青
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Shoei Chemical Inc
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • B82—NANOTECHNOLOGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
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    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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CN202080068876.3A 2019-08-12 2020-08-12 具有低半峰全宽的蓝光发射ZnSe1-xTex合金纳米晶体的合成 Active CN114867818B (zh)

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Application Number Priority Date Filing Date Title
US201962885469P 2019-08-12 2019-08-12
US62/885,469 2019-08-12
PCT/US2020/045925 WO2021030432A1 (en) 2019-08-12 2020-08-12 SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM

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CN114867818A CN114867818A (zh) 2022-08-05
CN114867818B true CN114867818B (zh) 2024-12-03

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US (3) US11499097B2 (https=)
JP (1) JP7720033B2 (https=)
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WO (1) WO2021030432A1 (https=)

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KR20240162142A (ko) 2022-03-25 2024-11-14 소에이 가가쿠 고교 가부시키가이샤 나노구조체를 포함하는 실리카 복합 마이크로입자
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US11499097B2 (en) 2022-11-15
KR102871616B1 (ko) 2025-10-15
KR20220044989A (ko) 2022-04-12
US20210047563A1 (en) 2021-02-18
US20230235224A1 (en) 2023-07-27
US12163079B2 (en) 2024-12-10
JP7720033B2 (ja) 2025-08-07
US20250059441A1 (en) 2025-02-20
WO2021030432A1 (en) 2021-02-18
JP2022544773A (ja) 2022-10-21
CN114867818A (zh) 2022-08-05

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