JP7720033B2 - 狭い半値全幅を有する青色発光ＺｎＳｅ１－ｘＴｅｘ合金ナノ結晶の合成 - Google Patents

狭い半値全幅を有する青色発光ＺｎＳｅ１－ｘＴｅｘ合金ナノ結晶の合成

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Publication number
JP7720033B2
JP7720033B2 JP2022508878A JP2022508878A JP7720033B2 JP 7720033 B2 JP7720033 B2 JP 7720033B2 JP 2022508878 A JP2022508878 A JP 2022508878A JP 2022508878 A JP2022508878 A JP 2022508878A JP 7720033 B2 JP7720033 B2 JP 7720033B2
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zinc
shell
nanostructure
source
nanostructures
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JP2022544773A5 (https=
JP2022544773A (ja
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ニューメイヤー，ベンジャミン
イッペン，クリスチャン
マ，ルイシン
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Shoei Chemical Inc
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Shoei Chemical Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2022508878A 2019-08-12 2020-08-12 狭い半値全幅を有する青色発光ＺｎＳｅ１－ｘＴｅｘ合金ナノ結晶の合成 Active JP7720033B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962885469P 2019-08-12 2019-08-12
US62/885,469 2019-08-12
PCT/US2020/045925 WO2021030432A1 (en) 2019-08-12 2020-08-12 SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM

Publications (3)

Publication Number Publication Date
JP2022544773A JP2022544773A (ja) 2022-10-21
JP2022544773A5 JP2022544773A5 (https=) 2023-10-04
JP7720033B2 true JP7720033B2 (ja) 2025-08-07

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JP2022508878A Active JP7720033B2 (ja) 2019-08-12 2020-08-12 狭い半値全幅を有する青色発光ＺｎＳｅ１－ｘＴｅｘ合金ナノ結晶の合成

Country Status (5)

Country Link
US (3) US11499097B2 (https=)
JP (1) JP7720033B2 (https=)
KR (1) KR102871616B1 (https=)
CN (1) CN114867818B (https=)
WO (1) WO2021030432A1 (https=)

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WO2022181752A1 (ja) * 2021-02-26 2022-09-01 Ｎｓマテリアルズ株式会社 量子ドットの製造方法、及び、量子ドット
US20230174861A1 (en) * 2021-12-03 2023-06-08 Applied Materials, Inc. Narrowband quantum dots and methods of making them
KR20260037168A (ko) 2022-01-19 2026-03-17 소에이 가가쿠 고교 가부시키가이샤 Uv-경화성 양자 도트 제형
KR20240162142A (ko) 2022-03-25 2024-11-14 소에이 가가쿠 고교 가부시키가이샤 나노구조체를 포함하는 실리카 복합 마이크로입자
EP4652236A1 (en) * 2023-12-20 2025-11-26 Qna Technology Spolka Akcyjna Method for producing znse cores, method for producing tellurium-doped znse(te) cores and method for producing znse(te)/znse/zns quantum dots emitting light in the blue range

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JP2019157129A (ja) 2018-03-09 2019-09-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 量子ドット及びこれを含む電界発光素子
JP7357185B2 (ja) 2018-05-30 2023-10-06 ナノシス・インク． 青色発光ＺｎＳｅ１－ｘＴｅｘ合金ナノ結晶の合成方法

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JP2019157129A (ja) 2018-03-09 2019-09-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 量子ドット及びこれを含む電界発光素子
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Also Published As

Publication number Publication date
US11499097B2 (en) 2022-11-15
KR102871616B1 (ko) 2025-10-15
KR20220044989A (ko) 2022-04-12
US20210047563A1 (en) 2021-02-18
CN114867818B (zh) 2024-12-03
US20230235224A1 (en) 2023-07-27
US12163079B2 (en) 2024-12-10
US20250059441A1 (en) 2025-02-20
WO2021030432A1 (en) 2021-02-18
JP2022544773A (ja) 2022-10-21
CN114867818A (zh) 2022-08-05

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