JPWO2020189421A1 - - Google Patents

Info

Publication number
JPWO2020189421A1
JPWO2020189421A1 JP2021507235A JP2021507235A JPWO2020189421A1 JP WO2020189421 A1 JPWO2020189421 A1 JP WO2020189421A1 JP 2021507235 A JP2021507235 A JP 2021507235A JP 2021507235 A JP2021507235 A JP 2021507235A JP WO2020189421 A1 JPWO2020189421 A1 JP WO2020189421A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021507235A
Other versions
JP7346548B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020189421A1 publication Critical patent/JPWO2020189421A1/ja
Priority to JP2023066092A priority Critical patent/JP2023089164A/ja
Application granted granted Critical
Publication of JP7346548B2 publication Critical patent/JP7346548B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Automation & Control Theory (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2021507235A 2019-03-20 2020-03-10 半導体ウェハおよび半導体装置の製造方法 Active JP7346548B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023066092A JP2023089164A (ja) 2019-03-20 2023-04-14 半導体ウェハの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019052867 2019-03-20
JP2019052867 2019-03-20
PCT/JP2020/010406 WO2020189421A1 (ja) 2019-03-20 2020-03-10 半導体ウェハおよび半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023066092A Division JP2023089164A (ja) 2019-03-20 2023-04-14 半導体ウェハの製造方法

Publications (2)

Publication Number Publication Date
JPWO2020189421A1 true JPWO2020189421A1 (ja) 2020-09-24
JP7346548B2 JP7346548B2 (ja) 2023-09-19

Family

ID=72519799

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021507235A Active JP7346548B2 (ja) 2019-03-20 2020-03-10 半導体ウェハおよび半導体装置の製造方法
JP2023066092A Pending JP2023089164A (ja) 2019-03-20 2023-04-14 半導体ウェハの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023066092A Pending JP2023089164A (ja) 2019-03-20 2023-04-14 半導体ウェハの製造方法

Country Status (8)

Country Link
US (1) US20210407867A1 (ja)
EP (1) EP3944288A4 (ja)
JP (2) JP7346548B2 (ja)
KR (1) KR102637925B1 (ja)
CN (1) CN113544815A (ja)
SG (1) SG11202109726TA (ja)
TW (2) TWI811513B (ja)
WO (1) WO2020189421A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021048240A (ja) 2019-09-18 2021-03-25 キオクシア株式会社 磁気メモリ
TWI797548B (zh) 2020-09-15 2023-04-01 日商鎧俠股份有限公司 半導體基板、半導體基板之製造方法及半導體裝置之製造方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928368A (ja) * 1982-08-09 1984-02-15 Hitachi Ltd 半導体容量素子
JPH1064776A (ja) * 1996-08-15 1998-03-06 Toshiba Ceramics Co Ltd ダミーウエハ
JP2000100675A (ja) * 1998-09-25 2000-04-07 Toshiba Corp ダミーウェハー
JP2001332462A (ja) * 2000-03-16 2001-11-30 Denso Corp 半導体基板及びその半導体基板を用いた半導体装置の製造方法
JP2005340597A (ja) * 2004-05-28 2005-12-08 Toshiba Ceramics Co Ltd シリコンウェーハ熱処理用ボート
JP2006313887A (ja) * 2005-04-07 2006-11-16 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
US20130161792A1 (en) * 2011-12-27 2013-06-27 Maxim Integrated Products, Inc. Semiconductor device having trench capacitor structure integrated therein
KR20150131446A (ko) * 2014-05-14 2015-11-25 삼성전자주식회사 더미 웨이퍼
JP2016146429A (ja) * 2015-02-09 2016-08-12 トヨタ自動車株式会社 半導体装置の製造方法
JP2017022233A (ja) * 2015-07-09 2017-01-26 東京エレクトロン株式会社 縦型熱処理装置及び縦型熱処理装置の運転方法
US20170084452A1 (en) * 2015-09-21 2017-03-23 Samsung Electronics Co., Ltd. Dummy wafer, thin-film forming method, and method of fabricating a semiconductor device using the same
US20180005959A1 (en) * 2016-06-30 2018-01-04 Alpha And Omega Semiconductor Incorporated Trench mosfet device and the preparation method thereof
US20190074349A1 (en) * 2017-09-01 2019-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Low warpage high density trench capacitor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045435B1 (en) * 1998-11-03 2006-05-16 Mosel Vitelic Inc Shallow trench isolation method for a semiconductor wafer
US7157177B2 (en) * 2002-01-03 2007-01-02 Neah Power Systems, Inc. Porous fuel cell electrode structures having conformal electrically conductive layers thereon
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
CN100424841C (zh) * 2005-10-12 2008-10-08 联华电子股份有限公司 制造半导体器件的方法及移除间隙壁的方法
JP2007214243A (ja) * 2006-02-08 2007-08-23 Renesas Technology Corp 半導体装置の製造方法
JP5582710B2 (ja) * 2009-03-24 2014-09-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8278191B2 (en) 2009-03-31 2012-10-02 Georgia Tech Research Corporation Methods and systems for metal-assisted chemical etching of substrates
JP2012035578A (ja) * 2010-08-10 2012-02-23 Sumitomo Electric Ind Ltd ナノインプリント用モールド
US20130052826A1 (en) * 2011-08-30 2013-02-28 Fujifilm Corporation High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same
JP5993230B2 (ja) * 2012-07-03 2016-09-14 株式会社日立ハイテクノロジーズ 微細構造転写装置及び微細構造転写スタンパ
US10037896B2 (en) 2013-07-25 2018-07-31 The Board Of Trustees Of The Leland Stanford Junior University Electro-assisted transfer and fabrication of wire arrays
JP6211960B2 (ja) * 2014-03-13 2017-10-11 東京エレクトロン株式会社 制御装置、基板処理装置及び基板処理システム
JP6495838B2 (ja) * 2016-01-27 2019-04-03 東芝メモリ株式会社 半導体記憶装置及びその製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928368A (ja) * 1982-08-09 1984-02-15 Hitachi Ltd 半導体容量素子
JPH1064776A (ja) * 1996-08-15 1998-03-06 Toshiba Ceramics Co Ltd ダミーウエハ
JP2000100675A (ja) * 1998-09-25 2000-04-07 Toshiba Corp ダミーウェハー
JP2001332462A (ja) * 2000-03-16 2001-11-30 Denso Corp 半導体基板及びその半導体基板を用いた半導体装置の製造方法
JP2005340597A (ja) * 2004-05-28 2005-12-08 Toshiba Ceramics Co Ltd シリコンウェーハ熱処理用ボート
JP2006313887A (ja) * 2005-04-07 2006-11-16 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
US20130161792A1 (en) * 2011-12-27 2013-06-27 Maxim Integrated Products, Inc. Semiconductor device having trench capacitor structure integrated therein
KR20150131446A (ko) * 2014-05-14 2015-11-25 삼성전자주식회사 더미 웨이퍼
JP2016146429A (ja) * 2015-02-09 2016-08-12 トヨタ自動車株式会社 半導体装置の製造方法
JP2017022233A (ja) * 2015-07-09 2017-01-26 東京エレクトロン株式会社 縦型熱処理装置及び縦型熱処理装置の運転方法
US20170084452A1 (en) * 2015-09-21 2017-03-23 Samsung Electronics Co., Ltd. Dummy wafer, thin-film forming method, and method of fabricating a semiconductor device using the same
US20180005959A1 (en) * 2016-06-30 2018-01-04 Alpha And Omega Semiconductor Incorporated Trench mosfet device and the preparation method thereof
US20190074349A1 (en) * 2017-09-01 2019-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Low warpage high density trench capacitor

Also Published As

Publication number Publication date
TW202042286A (zh) 2020-11-16
KR102637925B1 (ko) 2024-02-20
TWI815242B (zh) 2023-09-11
KR20210124397A (ko) 2021-10-14
SG11202109726TA (en) 2021-10-28
US20210407867A1 (en) 2021-12-30
TWI811513B (zh) 2023-08-11
EP3944288A8 (en) 2022-03-09
EP3944288A4 (en) 2022-11-16
JP2023089164A (ja) 2023-06-27
JP7346548B2 (ja) 2023-09-19
WO2020189421A1 (ja) 2020-09-24
TW202213460A (zh) 2022-04-01
CN113544815A (zh) 2021-10-22
EP3944288A1 (en) 2022-01-26

Similar Documents

Publication Publication Date Title
BR112019017762A2 (ja)
BR112021017339A2 (ja)
BR112021013854A2 (ja)
BR112021018450A2 (ja)
BR112021017939A2 (ja)
BR112021017892A2 (ja)
BR112019016141A2 (ja)
BR112021017738A2 (ja)
BR112021017782A2 (ja)
BR112019016138A2 (ja)
BR112019016142A2 (ja)
BR112021018168A2 (ja)
BR112021017728A2 (ja)
AU2020104490A5 (ja)
BR112021008711A2 (ja)
BR112021018452A2 (ja)
BR112021017234A2 (ja)
BR112021017355A2 (ja)
BR112021017703A2 (ja)
BR112021018102A2 (ja)
BR112021017173A2 (ja)
BR112021017083A2 (ja)
BR112021017637A2 (ja)
BR112021012348A2 (ja)
BR112021018250A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210913

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211130

AA64 Notification of invalidation of claim of internal priority (with term)

Free format text: JAPANESE INTERMEDIATE CODE: A241764

Effective date: 20211130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220830

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221031

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230414

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230808

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230906

R150 Certificate of patent or registration of utility model

Ref document number: 7346548

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150