JPWO2020175684A5 - - Google Patents

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JPWO2020175684A5
JPWO2020175684A5 JP2021502652A JP2021502652A JPWO2020175684A5 JP WO2020175684 A5 JPWO2020175684 A5 JP WO2020175684A5 JP 2021502652 A JP2021502652 A JP 2021502652A JP 2021502652 A JP2021502652 A JP 2021502652A JP WO2020175684 A5 JPWO2020175684 A5 JP WO2020175684A5
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Japan
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semiconductor device
substrate
manufacturing
supporting substrate
semiconductor element
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JP2021502652A
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English (en)
Japanese (ja)
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JP7267394B2 (ja
JPWO2020175684A1 (https=
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Priority claimed from PCT/JP2020/008399 external-priority patent/WO2020175684A1/ja
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Publication of JPWO2020175684A5 publication Critical patent/JPWO2020175684A5/ja
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JP2021502652A 2019-02-28 2020-02-28 半導体素子の製造方法および半導体素子体 Active JP7267394B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019036097 2019-02-28
JP2019036097 2019-02-28
PCT/JP2020/008399 WO2020175684A1 (ja) 2019-02-28 2020-02-28 半導体素子の製造方法および半導体素子体

Publications (3)

Publication Number Publication Date
JPWO2020175684A1 JPWO2020175684A1 (https=) 2020-09-03
JPWO2020175684A5 true JPWO2020175684A5 (https=) 2022-07-28
JP7267394B2 JP7267394B2 (ja) 2023-05-01

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JP2021502652A Active JP7267394B2 (ja) 2019-02-28 2020-02-28 半導体素子の製造方法および半導体素子体

Country Status (5)

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US (1) US12132142B2 (https=)
EP (1) EP3933886B1 (https=)
JP (1) JP7267394B2 (https=)
CN (2) CN113490995B (https=)
WO (1) WO2020175684A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7854514B2 (ja) * 2022-12-05 2026-05-01 京セラ株式会社 半導体素子の製造方法および製造装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4638958B1 (https=) 1962-03-20 1971-11-16
JP4731180B2 (ja) * 2005-02-21 2011-07-20 三洋電機株式会社 窒化物系半導体素子の製造方法
JP2007096114A (ja) 2005-09-29 2007-04-12 Sanyo Electric Co Ltd 半導体発光素子及び半導体発光素子の製造方法
JP5070247B2 (ja) * 2009-06-23 2012-11-07 株式会社沖データ 半導体装置の製造方法、及び半導体装置
JP4638958B1 (ja) * 2009-08-20 2011-02-23 株式会社パウデック 半導体素子の製造方法
JP5466479B2 (ja) * 2009-10-27 2014-04-09 スタンレー電気株式会社 半導体素子の製造方法
WO2015160909A1 (en) * 2014-04-16 2015-10-22 Yale University Method of obtaining planar semipolar gallium nitride surfaces
US20230260943A1 (en) * 2022-02-17 2023-08-17 Micron Technology, Inc. Semiconductor die assemblies with flexible interconnects and associated methods and systems

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