JPWO2020123510A5 - - Google Patents
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- Publication number
- JPWO2020123510A5 JPWO2020123510A5 JP2021533450A JP2021533450A JPWO2020123510A5 JP WO2020123510 A5 JPWO2020123510 A5 JP WO2020123510A5 JP 2021533450 A JP2021533450 A JP 2021533450A JP 2021533450 A JP2021533450 A JP 2021533450A JP WO2020123510 A5 JPWO2020123510 A5 JP WO2020123510A5
- Authority
- JP
- Japan
- Prior art keywords
- etching solution
- polycrystalline
- level
- elemental metal
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000243 solution Substances 0.000 claims 33
- 238000005530 etching Methods 0.000 claims 32
- 239000000463 material Substances 0.000 claims 17
- 239000007788 liquid Substances 0.000 claims 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 12
- 230000001678 irradiating Effects 0.000 claims 11
- 238000004090 dissolution Methods 0.000 claims 9
- 230000003647 oxidation Effects 0.000 claims 9
- 238000007254 oxidation reaction Methods 0.000 claims 9
- 239000000376 reactant Substances 0.000 claims 9
- 239000007769 metal material Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 7
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl radical Chemical class [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 claims 5
- 239000007864 aqueous solution Substances 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 238000005755 formation reaction Methods 0.000 claims 4
- 238000004377 microelectronic Methods 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 3
- 150000004706 metal oxides Chemical class 0.000 claims 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- 239000008139 complexing agent Substances 0.000 claims 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N edta Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 2
- 229940071106 ethylenediaminetetraacetate Drugs 0.000 claims 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N 1,2-ethanediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K 2qpq Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims 1
- 239000004471 Glycine Substances 0.000 claims 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N Hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N Malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims 1
- 235000004279 alanine Nutrition 0.000 claims 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052803 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims 1
- 229940099690 malic acid Drugs 0.000 claims 1
- 235000011090 malic acid Nutrition 0.000 claims 1
- 239000001630 malic acid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 230000001590 oxidative Effects 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862779604P | 2018-12-14 | 2018-12-14 | |
| US62/779,604 | 2018-12-14 | ||
| US16/287,669 US10896824B2 (en) | 2018-12-14 | 2019-02-27 | Roughness reduction methods for materials using illuminated etch solutions |
| US16/287,669 | 2019-02-27 | ||
| PCT/US2019/065484 WO2020123510A1 (en) | 2018-12-14 | 2019-12-10 | Roughness reduction methods for materials using illuminated etch solutions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022515349A JP2022515349A (ja) | 2022-02-18 |
| JPWO2020123510A5 true JPWO2020123510A5 (zh) | 2022-12-16 |
Family
ID=71072909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021533450A Pending JP2022515349A (ja) | 2018-12-14 | 2019-12-10 | 照射されたエッチング溶液を使用した材料の粗さ低減方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10896824B2 (zh) |
| JP (1) | JP2022515349A (zh) |
| KR (1) | KR20210092833A (zh) |
| CN (1) | CN113287189A (zh) |
| SG (1) | SG11202106328SA (zh) |
| TW (1) | TWI825242B (zh) |
| WO (1) | WO2020123510A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210313185A1 (en) * | 2020-04-06 | 2021-10-07 | California Institute Of Technology | Atomic layer etching for smoothing of arbitrary surfaces |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10183185A (ja) * | 1996-12-24 | 1998-07-14 | Hitachi Ltd | 洗浄液、その配合決定方法ならびに製造方法、洗浄方法、および、半導体基板の製造方法 |
| US8372757B2 (en) * | 2003-10-20 | 2013-02-12 | Novellus Systems, Inc. | Wet etching methods for copper removal and planarization in semiconductor processing |
| US8530359B2 (en) | 2003-10-20 | 2013-09-10 | Novellus Systems, Inc. | Modulated metal removal using localized wet etching |
| US7972970B2 (en) * | 2003-10-20 | 2011-07-05 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| WO2006012174A2 (en) * | 2004-06-28 | 2006-02-02 | Lam Research Corporation | System and method of cleaning and etching a substrate |
| US7921859B2 (en) * | 2004-12-16 | 2011-04-12 | Sematech, Inc. | Method and apparatus for an in-situ ultraviolet cleaning tool |
| WO2007058284A1 (ja) * | 2005-11-18 | 2007-05-24 | Mitsubishi Gas Chemical Company, Inc. | ウエットエッチング方法及びウエットエッチング装置 |
| US20080217294A1 (en) | 2007-03-09 | 2008-09-11 | Tokyo Electron Limited | Method and system for etching a hafnium containing material |
| KR101464230B1 (ko) | 2008-01-31 | 2014-11-25 | 주식회사 에스앤에스텍 | 그레이톤 블랭크 마스크, 그레이톤 포토마스크 및 그의제조방법 |
| KR101001666B1 (ko) | 2008-07-08 | 2010-12-15 | 광주과학기술원 | 마이크로 수직 구조체의 제조 방법 |
| FR2936356B1 (fr) * | 2008-09-23 | 2010-10-22 | Soitec Silicon On Insulator | Procede de dissolution locale de la couche d'oxyde dans une structure de type semi-conducteur sur isolant |
| DE102009058962B4 (de) * | 2009-11-03 | 2012-12-27 | Suss Microtec Photomask Equipment Gmbh & Co. Kg | Verfahren und Vorrichtung zum Behandeln von Substraten |
| JP5865057B2 (ja) * | 2011-12-19 | 2016-02-17 | 株式会社半導体エネルギー研究所 | 半導体基板の再生方法、及びｓｏｉ基板の作製方法 |
| US10920141B2 (en) * | 2013-06-06 | 2021-02-16 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
| WO2015070164A1 (en) * | 2013-11-11 | 2015-05-14 | Tokyo Electron Limited | System and method for enhanced removal of metal hardmask using ultra violet treatment |
| KR101678367B1 (ko) | 2014-12-19 | 2016-11-22 | 주식회사 테스 | 기판처리시스템 |
-
2019
- 2019-02-27 US US16/287,669 patent/US10896824B2/en active Active
- 2019-12-10 WO PCT/US2019/065484 patent/WO2020123510A1/en active Application Filing
- 2019-12-10 SG SG11202106328SA patent/SG11202106328SA/en unknown
- 2019-12-10 JP JP2021533450A patent/JP2022515349A/ja active Pending
- 2019-12-10 CN CN201980088770.7A patent/CN113287189A/zh active Pending
- 2019-12-10 KR KR1020217021718A patent/KR20210092833A/ko not_active Application Discontinuation
- 2019-12-12 TW TW108145473A patent/TWI825242B/zh active
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