JPWO2020123510A5

JPWO2020123510A5 -

Info

Publication number: JPWO2020123510A5
Application number: JP2021533450A
Authority: JP
Publication date: 2022-12-16

Claims

A method of processing a substrate for a microelectronic workpiece, comprising:
receiving a substrate for a microelectronic workpiece having polycrystalline material to be etched from the surface of the substrate;
applying an etching solution to the surface of the substrate, the etching solution having a first level of reactants with respect to the polycrystalline material;
exposing the etchant solution and the surface of the polycrystalline material to radiation to form an oxidized layer of material on the surface of the polycrystalline material, wherein the exposure causes the etchant solution to having a second level of reactants for said polycrystalline material greater than one level;
removing the oxidized layer of the material by dissolution , wherein the oxidation rate constant of oxidation is greater than the dissolution rate constant of dissolution ;
A method, including

2. The method of claim 1, wherein the etching solution comprises at least one of a gaseous etching solution, a liquid etching solution, or a combination thereof.

2. The method of claim 1, further comprising periodically repeating said exposing and removing to etch said material.

2. The method of claim 1, wherein said exposing and removing are performed in at least one of a single processing step or different processing steps.

2. The method of claim 1, wherein the etching solution comprises a liquid etching solution.

6. The method of claim 5, wherein said removing comprises using said liquid etchant in a separate process step to dissolve said oxide layer .

6. The method of claim 5, wherein said etching solution comprises an aqueous solution comprising hydrogen peroxide and said removing comprises using an aqueous solution comprising a complexing agent.

8. The method of claim 7, wherein the complexing agent comprises at least one of citrate, ethylenediamine, ethylenediaminetetraacetate (EDTA), malic acid, oxalic acid, glycine, alanine, or iminodiacetic acid. .

6. The method of claim 5, wherein said removing comprises dissolving said oxide layer using said liquid etching solution concurrently with said oxidation.

10. The method of claim 9, wherein the liquid etching solution comprises an aqueous solution containing hydrogen peroxide and citrate.

6. The method of claim 5, wherein the polycrystalline material to be etched comprises polycrystalline elemental metal, and wherein the polycrystalline elemental metal comprises cobalt.

6. The method of claim 5, wherein the liquid etching solution comprises hydrogen peroxide.

said irradiation of said hydrogen peroxide results in the formation of hydroxyl radicals within said liquid etching solution, said second level of reactants resulting at least in part from said formation of said hydroxyl radicals, said hydroxyl radicals comprising: 13. The method of claim 12, wherein said material is oxidized.

14. The method of claim 13, wherein said irradiating comprises irradiating said liquid etching solution with light having at least one of a wavelength less than 560 nm or a wavelength between 10 nm and 400 nm.

2. The method of claim 1, wherein said exposing comprises selectively irradiating said etching solution.

16. The method of claim 15, wherein selectively irradiating comprises irradiating with ultraviolet (UV) light in one or more on/off patterns.

The selectively irradiating comprises irradiating with two or more different colored lights, and the removing comprises illuminating the oxidized layer of the material using two or more different colored lights. 16. The method of claim 15, comprising:

16. The method of claim 15, wherein said selectively irradiating comprises irradiating one or more areas of said etching solution where an oxide layer is desired and not irradiating other areas of said etching solution.

2. The method of claim 1, wherein the etching solution comprises an aqueous solution containing at least one of ozone or hypochlorous acid.

2. The method of claim 1, further comprising adjusting the exposure such that different areas of the etching solution are exposed differently to provide different amounts of etching in the different areas.

further comprising measuring the polycrystalline material and controlling the adjustment based on the measurements to provide feedforward control, wherein the measurements are the topography of the surface of the polycrystalline material or the 21. The method of Claim 20, comprising measuring at least one of the thicknesses.

A method of processing a substrate for a microelectronic workpiece, comprising:
receiving a substrate for a microelectronic workpiece having polycrystalline elemental metal to be etched from the surface of the substrate;
applying a liquid etching solution comprising hydrogen peroxide to the surface of the substrate, the liquid etching solution having a first level of reactants to the polycrystalline elemental metal;
irradiating the liquid etching solution to cause the formation of hydroxyl radicals from the hydrogen peroxide, the formation of hydroxyl radicals at least in part causing the liquid etching solution to react with the polycrystalline elemental metal; having a second level of reactant, said second level of reactant being greater than said first level of reactant;
oxidizing the polycrystalline elemental metal with the liquid etching solution to form a metal oxide;
removing the metal oxide by dissolution, wherein the oxidation rate constant of oxidation is greater than the dissolution rate constant of dissolution;
A method, including

23. The method of claim 22, further comprising repeating said irradiation, oxidation and removal to etch said polycrystalline elemental metal.

23. The method of claim 22, wherein said removing comprises dissolving said metal oxide using said liquid etching solution concurrently with said oxidation.

A method of polishing a surface of a material, comprising:
receiving a polycrystalline elemental metal material to be polished;
applying an etching solution to the surface of the polycrystalline elemental metal material, the etching solution having a first level of reactants to the polycrystalline elemental metal material;
exposing the etching solution and the surface of the polycrystalline elemental metallic material to radiation to form an oxidized layer of material on the surface of the polycrystalline elemental metallic material, wherein the exposure causes the etching solution to has a second level of reactants with respect to said polycrystalline elemental metallic material greater than said first level;
removing the oxidized layer of the material by dissolution so that the polycrystalline elemental metal material has a polished surface, the polished surface being the surface of the polycrystalline elemental metal material prior to the exposure and removal; having a surface variation smaller than that of said surface, and an oxidation rate constant for oxidation greater than a dissolution rate constant for dissolution, to remove
A method, including

26. The method of Claim 25, wherein the etching solution comprises at least one of a gaseous etching solution, a liquid etching solution, or a combination thereof.

26. The method of Claim 25, further comprising periodically repeating said exposing and removing to polish said material.