JPWO2020085468A1 - 不飽和結合を有する硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物及びそれを用いたドライエッチング方法 - Google Patents
不飽和結合を有する硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物及びそれを用いたドライエッチング方法 Download PDFInfo
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- 238000001312 dry etching Methods 0.000 title claims abstract description 66
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052717 sulfur Inorganic materials 0.000 title claims abstract description 34
- 239000011593 sulfur Substances 0.000 title claims abstract description 34
- -1 fluorocarbon compound Chemical class 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 35
- 238000005530 etching Methods 0.000 claims abstract description 143
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 82
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 238000001020 plasma etching Methods 0.000 claims description 10
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- HZFIOEDAPJNTCQ-UHFFFAOYSA-N 2,2,3,4,5,5-hexafluorothiophene Chemical compound FC1=C(F)C(F)(F)SC1(F)F HZFIOEDAPJNTCQ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- 229910052754 neon Inorganic materials 0.000 claims description 3
- JETJLHODLSHNFR-UHFFFAOYSA-N FC(SOC=C)(F)F Chemical compound FC(SOC=C)(F)F JETJLHODLSHNFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 19
- 238000012360 testing method Methods 0.000 description 19
- 239000013077 target material Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- QVHWOZCZUNPZPW-UHFFFAOYSA-N 1,2,3,3,4,4-hexafluorocyclobutene Chemical compound FC1=C(F)C(F)(F)C1(F)F QVHWOZCZUNPZPW-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- DBNMHLDZMPEZCX-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane-2-thione Chemical compound FC(F)(F)C(=S)C(F)(F)F DBNMHLDZMPEZCX-UHFFFAOYSA-N 0.000 description 1
- QLEDBYJNMXXMRY-UHFFFAOYSA-N 1,1,2-trifluoro-2-(trifluoromethylsulfanyl)ethene Chemical compound FC(F)=C(F)SC(F)(F)F QLEDBYJNMXXMRY-UHFFFAOYSA-N 0.000 description 1
- VAYXDELKTUVICD-UHFFFAOYSA-N 2,2,3,3,4,5-hexafluorothiophene Chemical compound FC1=C(F)C(F)(F)C(F)(F)S1 VAYXDELKTUVICD-UHFFFAOYSA-N 0.000 description 1
- UCYHFCTVZCAVRH-UHFFFAOYSA-N 2,2,3-trifluoro-3-(trifluoromethyl)thiirane Chemical compound FC1(SC1(C(F)(F)F)F)F UCYHFCTVZCAVRH-UHFFFAOYSA-N 0.000 description 1
- GQORANNOOLLPOS-UHFFFAOYSA-N 2,3,4,5-tetrafluorothiophene Chemical compound FC=1SC(F)=C(F)C=1F GQORANNOOLLPOS-UHFFFAOYSA-N 0.000 description 1
- IXCNXWOYJYTCCJ-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene-1-thione Chemical compound FC(F)(F)C(=C=S)C(F)(F)F IXCNXWOYJYTCCJ-UHFFFAOYSA-N 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- DLECYKOCQQGJHK-UHFFFAOYSA-N FC(C(F)=C1F)=C(F)S1(F)F Chemical compound FC(C(F)=C1F)=C(F)S1(F)F DLECYKOCQQGJHK-UHFFFAOYSA-N 0.000 description 1
- AMTIZNAGVRLIAB-UHFFFAOYSA-N FC(F)(F)C(=S)C(F)(F)C(F)(F)F Chemical compound FC(F)(F)C(=S)C(F)(F)C(F)(F)F AMTIZNAGVRLIAB-UHFFFAOYSA-N 0.000 description 1
- RXQONCPFHUZTEX-UHFFFAOYSA-N [1,3,3,3-tetrafluoro-2-(trifluoromethyl)prop-1-enyl] thiohypofluorite Chemical compound FSC(F)=C(C(F)(F)F)C(F)(F)F RXQONCPFHUZTEX-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
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Abstract
Description
[1]
一般式(1):CxFySz(式中、x、y及びzは、2≦x≦5、y≦2x、1≦z≦2)で表され、不飽和結合を有している硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物。
[2]
前記硫黄含有フルオロカーボン化合物が2,2,3,4,5,5−ヘキサフルオロ−2,5−ジヒドロチオフェン(C4F6S)及びトリフルオロビニルトリフルオロメチルチオエーテル(C3F6S)から選ばれる少なくとも一種である[1]に記載のドライエッチングガス組成物。
[3]
硫黄含有フルオロカーボン化合物を1〜100vol%の量で含む、[1]又は[2]に記載のドライエッチングガス組成物。
[4]
前記硫黄含有フルオロカーボン化合物に加えて、O2、O3、CO、CO2、NO、NO2、SO2及びSO3からなる群から選ばれる少なくとも1種の酸素含有化合物を含む、[1]〜[3]の何れか1項に記載のドライエッチングガス組成物。
[5]
前記硫黄含有フルオロカーボン化合物に加えて、N2、He、Ar、Ne及びXeからなる群から選ばれる少なくとも1種の不活性ガスを含む、[1]〜[4]の何れか1項に記載のドライエッチングガス組成物。
[6]
[1]〜[5]の何れか1項に記載のドライエッチングガス組成物を用いてプラズマエッチングを行い、ケイ素を含む堆積物または膜をエッチングする工程を有するドライエッチング方法。
[7]
前記ケイ素を含む堆積物または膜が、酸素及び/又は窒素を含む堆積物または膜である、[6]に記載のドライエッチング方法。
[8]
マスク材料に対して前記ケイ素を含む堆積物または膜を選択的にエッチングする工程を有する、[6]または[7]に記載のドライエッチング方法。
[9]
(a1)炭素を含むシリコン系膜、(a2)単結晶シリコン膜、(a3)アモルファスシリコン膜、(a4)多結晶シリコン膜(ポリシリコン膜)、(a5)シリコン酸窒化膜、(a6)アモルファスカーボン膜及び/又は(a7)フォトレジスト膜と、(b1)シリコン酸化膜及び/又は(b2)シリコン窒化膜との積層構造体を、[1]〜[5]の何れか1項に記載のドライエッチングガス組成物を用いてプラズマエッチングすることによって、前記積層構造体中の(b1)シリコン酸化膜及び/又は(b2)シリコン窒化膜を選択的にエッチングする工程を含むドライエッチング方法。
[10]
[9]に記載のドライエッチング方法において、前記積層構造体が(b1)シリコン酸化膜及び(b2)シリコン窒化膜を含み、(b2)シリコン窒化膜に対して(b1)シリコン酸化膜のエッチングを選択的に行うドライエッチング方法。
[11]
(a1)炭素を含むシリコン系膜、(a2)単結晶シリコン膜、(a3)アモルファスシリコン膜、(a4)シリコン窒化膜、(a5)シリコン酸窒化膜、(a6)アモルファスカーボン膜及び/又は(a7)フォトレジスト膜と、(b1)シリコン酸化膜及び/又は(b2)多結晶シリコン膜(ポリシリコン膜)との積層構造体を、[1]〜[5]の何れか1項に記載のドライエッチングガス組成物を用いてプラズマエッチングすることによって、前記積層構造体中の(b1)シリコン酸化膜及び/又は(b2)多結晶シリコン膜(ポリシリコン膜)を選択的にエッチングする工程を含むドライエッチング方法。
[12]
[6]〜[11]の何れか1項に記載のドライエッチング方法において、Sを含むイオン又は活性種が生成するように[1]〜[5]の何れか1項に記載のエッチングガス組成物をプラズマ化してエッチングを行うドライエッチング方法。
[13]
[6]〜[11]の何れか1項に記載のドライエッチング方法において、(b1)シリコン酸化膜及び(b2)シリコン窒化膜を同時にエッチング可能なプラズマ条件下で[1]〜[5]の何れか1項に記載のドライエッチングガス組成物によるエッチングを行うドライエッチング方法。
一般式(1):CxFySz
(式中、x、y及びzは、2≦x≦5、y≦2x、1≦z≦2)
などが挙げられる。
(a)一般式(1)に示される化合物は、純度90vol%以上で実施することが出来、純度99vol%以上で実施することが好ましく、純度99.999vol%以上で実施することが特に好ましい。
(b)エッチングに用いられるドライエッチング組成物において、一般式(1)に示される化合物は、1〜100vol%であることが好ましい。
(c)エッチングに用いられるドライエッチング組成物において、一般式(1)に示される化合物以外に、O2、O3、CO、CO2、NO、NO2、SO2及びSO3からなる酸素原子を含む化合物群から選択される少なくとも一つが含まれることが好ましく、特にO2を用いることが好ましい。酸素原子を含む化合物の割合は、一般式(1)に示される化合物と酸素原子を含む化合物の総量に対して、5〜80%であることが好ましく、10〜65%であることが特に好ましい。
(d)エッチングに用いられるドライエッチング組成物において、一般式(1)に示される化合物と、上記酸素原子を含む化合物群に加えて/又はそれに代えて希ガスまたはN2からなる不活性ガス群から選択される少なくとも一つが含まれることが好ましく、特にArを用いることが好ましい。エッチングガス組成物に含まれる不活性ガスの割合は、1〜80vol%であることが好ましく、50〜75vol%であることが特に好ましい。
ガスの流量は、温度(0℃)、圧力(1atm)を標準状態とするsccm(standard cc/min)で表現した。
A/B選択比 = A膜のエッチングレート(nm/min) ÷ B膜のエッチングレート(nm/min)
シリコンウエハ上にそれぞれSiO2、SiN又はACLを堆積した異なる3つのサンプルを用いて表1に示す条件でエッチング試験を行った。エッチングガスには、比較例として硫黄を含まないパーフルオロシクロブテン(1,2,3,3,4,4−ヘキサフルオロ−1−シクロブテン(C4F6)と、本発明の実施例として硫黄を含む2,2,3,4,5,5−ヘキサフルオロ−2,5−ジヒドロチオフェン(C4F6S)を用いた。
エッチングガスで対象をエッチングすることと、エッチングガスの分解物が堆積することは、競争関係にあり、エッチングの際には他方でそのような堆積物が形成される。比較例として硫黄を含まないパーフルオロシクロブテン(1,2,3,3,4,4−ヘキサフルオロ−1−シクロブテン(C4F6)と、本発明の実施例として硫黄を含む2,2,3,4,5,5−ヘキサフルオロ−2,5−ジヒドロチオフェン(C4F6S)を用いて、以下の表2に示す条件でエッチングガスの堆積物を形成し、Arスパッタによって堆積物の除去処理の容易性を評価した。
シリコンウエハ上にそれぞれSiO2、SiN又はACLを堆積した異なる3つのサンプルを用いて表3に示す条件でエッチング試験を行った。エッチングガスには、比較例として硫黄を含まないパーフルオロプロペン(1,1,2,3,3,3−ヘキサフルオロ−1−プロペン(C3F6)と、本発明の実施例として硫黄を含むトリフルオロビニルトリフルオロメチルチオエーテル(C3F6S)を用いた。
Claims (13)
- 一般式(1):CxFySz(式中、x、y及びzは、2≦x≦5、y≦2x、1≦z≦2)で表され、不飽和結合を有している硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物。
- 前記硫黄含有フルオロカーボン化合物が2,2,3,4,5,5−ヘキサフルオロ−2,5−ジヒドロチオフェン(C4F6S)及びトリフルオロビニルトリフルオロメチルチオエーテル(C3F6S)から選ばれる少なくとも一種である請求項1に記載のドライエッチングガス組成物。
- 硫黄含有フルオロカーボン化合物を1〜100vol%の量で含む、請求項1又は2に記載のドライエッチングガス組成物。
- 前記硫黄含有フルオロカーボン化合物に加えて、O2、O3、CO、CO2、NO、NO2、SO2及びSO3からなる群から選ばれる少なくとも1種の酸素含有化合物を含む、請求項1〜3の何れか1項に記載のドライエッチングガス組成物。
- 前記硫黄含有フルオロカーボン化合物に加えて、N2、He、Ar、Ne及びXeからなる群から選ばれる少なくとも1種の不活性ガスを含む、請求項1〜4の何れか1項に記載のドライエッチングガス組成物。
- 請求項1〜5の何れか1項に記載のドライエッチングガス組成物を用いてプラズマエッチングを行い、ケイ素を含む堆積物または膜をエッチングする工程を有するドライエッチング方法。
- 前記ケイ素を含む堆積物または膜が、酸素及び/又は窒素を含む堆積物または膜である、請求項6に記載のドライエッチング方法。
- マスク材料に対して前記ケイ素を含む堆積物または膜を選択的にエッチングする工程を有する、請求項6または7に記載のドライエッチング方法。
- (a1)炭素を含むシリコン系膜、(a2)単結晶シリコン膜、(a3)アモルファスシリコン膜、(a4)多結晶シリコン膜(ポリシリコン膜)、(a5)シリコン酸窒化膜、(a6)アモルファスカーボン膜及び/又は(a7)フォトレジスト膜と、(b1)シリコン酸化膜及び/又は(b2)シリコン窒化膜との積層構造体を、請求項1〜5の何れか1項に記載のドライエッチングガス組成物を用いてプラズマエッチングすることによって、前記積層構造体中の(b1)シリコン酸化膜及び/又は(b2)シリコン窒化膜を選択的にエッチングする工程を含むドライエッチング方法。
- 請求項9に記載のドライエッチング方法において、前記積層構造体が(b1)シリコン酸化膜及び(b2)シリコン窒化膜を含み、(b2)シリコン窒化膜に対して(b1)シリコン酸化膜のエッチングを選択的に行うドライエッチング方法。
- (a1)炭素を含むシリコン系膜、(a2)単結晶シリコン膜、(a3)アモルファスシリコン膜、(a4)シリコン窒化膜、(a5)シリコン酸窒化膜、(a6)アモルファスカーボン膜及び/又は(a7)フォトレジスト膜と、(b1)シリコン酸化膜及び/又は(b2)多結晶シリコン膜(ポリシリコン膜)との積層構造体を、請求項1〜5の何れか1項に記載のドライエッチングガス組成物を用いてプラズマエッチングすることによって、前記積層構造体中の(b1)シリコン酸化膜及び/又は(b2)多結晶シリコン膜(ポリシリコン膜)を選択的にエッチングする工程を含むドライエッチング方法。
- 請求項6〜11の何れか1項に記載のドライエッチング方法において、Sを含むイオン又は活性種が生成するように請求項1〜5の何れか1項に記載のエッチングガス組成物をプラズマ化してエッチングを行うドライエッチング方法。
- 請求項6〜11の何れか1項に記載のドライエッチング方法において、(b1)シリコン酸化膜及び(b2)シリコン窒化膜を同時にエッチング可能なプラズマ条件下で請求項1〜5の何れか1項に記載のドライエッチングガス組成物によるエッチングを行うドライエッチング方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0613351A (ja) * | 1992-06-29 | 1994-01-21 | Sony Corp | ドライエッチング方法 |
KR20010010568A (ko) * | 1999-07-21 | 2001-02-15 | 윤종용 | 황 함유 탄화불소 가스를 사용하는 산화막의 건식 에칭 방법 |
JP2016529740A (ja) * | 2013-09-09 | 2016-09-23 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチングガスを用いて半導体構造をエッチングする方法 |
US20190148167A1 (en) * | 2017-11-16 | 2019-05-16 | Wonik Materials | Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3111661B2 (ja) * | 1992-07-24 | 2000-11-27 | ソニー株式会社 | ドライエッチング方法 |
US7655572B2 (en) * | 2005-10-24 | 2010-02-02 | Tokyo Electron Limited | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium |
CN103531475A (zh) * | 2012-07-03 | 2014-01-22 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
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US9521116B2 (en) | 2014-06-11 | 2016-12-13 | Verizon Patent And Licensing Inc. | Apparatus, method, and system for securing a public wireless network |
JP6636250B2 (ja) | 2015-02-12 | 2020-01-29 | 関東電化工業株式会社 | ドライエッチングガス組成物及びドライエッチング方法 |
US9911620B2 (en) * | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
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US10692880B2 (en) * | 2016-12-27 | 2020-06-23 | Applied Materials, Inc. | 3D NAND high aspect ratio structure etch |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0613351A (ja) * | 1992-06-29 | 1994-01-21 | Sony Corp | ドライエッチング方法 |
KR20010010568A (ko) * | 1999-07-21 | 2001-02-15 | 윤종용 | 황 함유 탄화불소 가스를 사용하는 산화막의 건식 에칭 방법 |
JP2016529740A (ja) * | 2013-09-09 | 2016-09-23 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチングガスを用いて半導体構造をエッチングする方法 |
US20190148167A1 (en) * | 2017-11-16 | 2019-05-16 | Wonik Materials | Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture |
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