JP6839331B2 - 硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物を用いたドライエッチング方法 - Google Patents
硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物を用いたドライエッチング方法 Download PDFInfo
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- 238000001312 dry etching Methods 0.000 title claims description 44
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 title claims description 22
- 229910052717 sulfur Inorganic materials 0.000 title claims description 22
- 239000011593 sulfur Substances 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 21
- -1 fluorocarbon compound Chemical class 0.000 title claims description 18
- 238000005530 etching Methods 0.000 claims description 80
- 239000007789 gas Substances 0.000 claims description 61
- 150000001875 compounds Chemical class 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- JUTLAXFVSZJSHM-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorothiolane Chemical compound FC1(F)SC(F)(F)C(F)(F)C1(F)F JUTLAXFVSZJSHM-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KDKGPLZMKATCHY-UHFFFAOYSA-N 1,1,4,4-tetrafluorobuta-1,3-diene Chemical compound FC(F)=CC=C(F)F KDKGPLZMKATCHY-UHFFFAOYSA-N 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- OAHRHXJQXOPAEA-UHFFFAOYSA-N FC1(C(F)(F)SSC1(F)F)F Chemical compound FC1(C(F)(F)SSC1(F)F)F OAHRHXJQXOPAEA-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Description
[1]
一般式(1):CxFySz(式中、x、y及びzは、2≦x≦5、y≦2x、1≦z≦2)で表され、飽和かつ環状の硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物。
[2]
前記硫黄含有フルオロカーボン化合物が2,2,3,3,4,4,5,5−オクタフルオロテトラヒドロチオフェン(C4F8S)である[1]に記載のドライエッチングガス組成物。
[3]
硫黄含有フルオロカーボン化合物を1〜100vol%の量で含む、[1]又は[2]に記載のドライエッチングガス組成物。
[4]
前記硫黄含有フルオロカーボン化合物に加えて、O2、O3、CO、CO2、NO、NO2、SO2及びSO3からなる群から選ばれる少なくとも1種の酸素含有化合物を含む、[1]〜[3]の何れか1項に記載のドライエッチングガス組成物。
[5]
前記硫黄含有フルオロカーボン化合物に加えて、N2、He、Ar、Ne及びXeからなる群から選ばれる少なくとも1種の不活性ガスを含む、[1]〜[4]の何れか1項に記載のドライエッチングガス組成物。
[6]
(a1)炭素を含むシリコン系膜、(a2)結晶シリコン膜、(a3)アモルファスシリコン膜、(a4)多結晶シリコン膜(ポリシリコン膜)、(a5)シリコン酸窒化膜、(a6)アモルファスカーボン膜、(a7)フォトレジスト膜、(a8)シリコン酸化膜及び(a9)シリコン窒化膜からなる群から選ばれる少なくとも2種以上を含む積層構造体を、[1]〜[5]のいずれかに記載のドライエッチングガス組成物を用いてプラズマエッチングを行い、(a6)アモルファスカーボン膜及び(a7)フォトレジスト膜以外を個別又は同時に選択的にエッチングする工程を含むドライエッチング方法。
[7]
(a1)炭素を含むシリコン系膜、(a2)結晶シリコン膜、(a3)アモルファスシリコン膜、(a4)多結晶シリコン膜(ポリシリコン膜)、(a5)シリコン酸窒化膜、(a6)アモルファスカーボン膜、(a7)フォトレジスト膜及び(a8)シリコン酸化膜からなる群から選ばれる少なくとも2種以上を含む積層構造体を、[1]〜[5]のいずれかに記載のドライエッチングガス組成物を用いてプラズマエッチングを行い、(a8)シリコン酸化膜のみを選択的にエッチングする工程を含むドライエッチング方法。
[8]
[6]又は[7]に記載のドライエッチング方法において、Sを含むイオン又は活性種が生成するように[1]〜[5]のいずれかに記載のエッチングガス組成物をプラズマ化してエッチングを行うドライエッチング方法。
[9]
[6]〜[8]のいずれかに記載のドライエッチング方法において、(b1)シリコン酸化膜及び(b2)シリコン窒化膜を同時にエッチング可能なプラズマ条件下で[1]〜[5]のいずれかに記載のドライエッチングガス組成物によるエッチングを行うドライエッチング方法。
一般式(1):CxFySz
(式中、x、y及びzは、2≦x≦5、y≦2x+2、1≦z≦2)
(a)一般式(1)に示される化合物は、純度90vol%以上で実施することが出来、純度99vol%以上で実施することが好ましく、純度99.999vol%以上で実施することが特に好ましい。
(b)エッチングに用いられるドライエッチング組成物において、一般式(1)に示される化合物は、1〜100vol%であることが好ましい。
(c)エッチングに用いられるドライエッチング組成物において、一般式(1)に示される化合物以外に、O2、O3、CO、CO2、NO、NO2、SO2及びSO3からなる酸素原子を含む化合物群から選択される少なくとも一つが含まれることが好ましく、特にO2を用いることが好ましい。酸素原子を含む化合物の割合は、一般式(1)に示される化合物と酸素原子を含む化合物の総量に対して、5〜50%であることが好ましく、10〜35%であることが特に好ましい。
(d)エッチングに用いられるドライエッチング組成物において、一般式(1)に示される化合物と、上記酸素原子を含む化合物群に加えて/又はそれに代えて希ガスまたはN2からなる不活性ガス群から選択される少なくとも一つが含まれることが好ましく、特にArを用いることが好ましい。エッチングガス組成物に含まれる不活性ガスの割合は、1〜80vol%であることが好ましく、50〜75vol%であることが特に好ましい。
シリコン酸化膜(SiOm)(mは自然数を表す。)としては、プラズマCVDによってシリコンウエハ上にSiO2膜を1000nm堆積したものを使用した。シリコン窒化膜(SiN)としては、熱CVDによってシリコンウエハ上にSiN膜を300nm堆積したものを使用した。アモルファスカーボン膜(ACL)としては、プラズマCVDによってシリコンウエハ上にACLを400nm堆積したものを使用した。炭素含有シリコン膜(SiOC)としてはシリコンウエハ上にApplied Materials社の登録商標であるBlack Diamond−3(以下BD−3)を500nm堆積したものを使用した。SiON膜としては、プラズマCVDによってシリコンウエハ上にSiONを500nm堆積したものを使用した。SiCN膜としては、プラズマCVDによってシリコンウエハ上にSiCNを500nm堆積したものを使用した。SiOCN膜としては、プラズマCVDによってシリコンウエハ上にSiOCNを500nm堆積したものを使用した。
A/B選択比 = A膜のエッチングレート(nm/min) ÷ B膜のエッチングレート(nm/min)
シリコンウエハ上にそれぞれSiO2、SiN、ACLなどを堆積した異なるサンプルを用いて表1に示す条件でエッチング試験を行った。エッチングガスには、比較例として硫黄を含まないパーフルオロシクロブタン(1,1,2,2,3,3,4,4−オクタフルオロシクロブタン(C4F8))と、本発明の実施例として硫黄を含む式:
Claims (5)
- SiO2と、SiOC、SiCN、SiOCN、SiON及びアモルファスカーボンから選ばれる少なくとも1種とを含む積層構造体を、一般式(1):CxFySz(式中、x、y及びzは、2≦x≦5、y≦2x、1≦z≦2)で表され、飽和かつ環状の硫黄含有フルオロカーボン化合物を含むドライエッチングガス組成物を用いてプラズマエッチングを行い、SiO2を選択的にエッチングする工程を含むドライエッチング方法であって、
前記硫黄含有フルオロカーボン化合物が、
前記ドライエッチングガス組成物が、前記硫黄含有フルオロカーボン化合物に加えて、酸素含有化合物を含む、前記方法。 - 請求項1に記載のドライエッチング方法において、Sを含むイオン又は活性種が生成するように前記ドライエッチングガス組成物をプラズマ化してエッチングを行うドライエッチング方法。
- 前記ドライエッチングガス組成物における前記酸素含有化合物の割合は、前記硫黄含有フルオロカーボン化合物と前記酸素含有化合物の総量に対して5〜50%である、請求項1〜2の何れか1項に記載のドライエッチング方法。
- 前記酸素含有化合物が、O2、O3、CO、CO2、NO、NO2、SO2及びSO3からなる群から選ばれる少なくとも1種である、請求項1〜3の何れか1項に記載のドライエッチング方法。
- 前記ドライエッチングガス組成物が、前記硫黄含有フルオロカーボン化合物に加えて、N2、He、Ar、Ne及びXeからなる群から選ばれる少なくとも1種の不活性ガスを含む、請求項1〜4の何れか1項に記載のドライエッチング方法。
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