JPWO2020036715A5 - - Google Patents
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- Publication number
- JPWO2020036715A5 JPWO2020036715A5 JP2021507986A JP2021507986A JPWO2020036715A5 JP WO2020036715 A5 JPWO2020036715 A5 JP WO2020036715A5 JP 2021507986 A JP2021507986 A JP 2021507986A JP 2021507986 A JP2021507986 A JP 2021507986A JP WO2020036715 A5 JPWO2020036715 A5 JP WO2020036715A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- processing chamber
- high resistance
- resistance layer
- chamber component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 5
- 125000006850 spacer group Chemical group 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 2
- 238000011065 in-situ storage Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862719575P | 2018-08-17 | 2018-08-17 | |
| US62/719,575 | 2018-08-17 | ||
| PCT/US2019/043243 WO2020036715A1 (en) | 2018-08-17 | 2019-07-24 | Coating material for processing chambers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021534587A JP2021534587A (ja) | 2021-12-09 |
| JPWO2020036715A5 true JPWO2020036715A5 (https=) | 2022-08-01 |
| JP2021534587A5 JP2021534587A5 (https=) | 2022-08-01 |
Family
ID=69523015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021507986A Ceased JP2021534587A (ja) | 2018-08-17 | 2019-07-24 | 処理チャンバ用コーティング材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20200058539A1 (https=) |
| JP (1) | JP2021534587A (https=) |
| KR (1) | KR20210033541A (https=) |
| CN (1) | CN112534560A (https=) |
| SG (1) | SG11202100059VA (https=) |
| TW (1) | TWI811421B (https=) |
| WO (1) | WO2020036715A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220020589A1 (en) * | 2020-07-19 | 2022-01-20 | Applied Materials, Inc. | Dielectric coating for deposition chamber |
| US12469733B2 (en) | 2021-12-14 | 2025-11-11 | Applied Materials, Inc. | Wafer to baseplate arc prevention using textured dielectric |
| JP2025505953A (ja) | 2022-01-28 | 2025-03-05 | ラム リサーチ コーポレーション | 基板処理システムのｅｓｃのための下塗り被覆および抵抗制御 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4900591A (en) * | 1988-01-20 | 1990-02-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the deposition of high quality silicon dioxide at low temperature |
| US7686926B2 (en) * | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
| TWI337753B (en) * | 2004-05-26 | 2011-02-21 | Applied Materials Inc | Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor |
| JP4804824B2 (ja) * | 2005-07-27 | 2011-11-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP4847231B2 (ja) * | 2006-06-29 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 電界に起因する剥離物による汚染を防止する装置 |
| US7983017B2 (en) * | 2006-12-26 | 2011-07-19 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method of forming |
| JP2010536172A (ja) * | 2007-08-10 | 2010-11-25 | アプライド マテリアルズ インコーポレイテッド | 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 |
| JP5475261B2 (ja) * | 2008-03-31 | 2014-04-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2011077442A (ja) * | 2009-10-01 | 2011-04-14 | Tokyo Electron Ltd | プラズマ処理方法およびプラズマ処理装置 |
| US8778813B2 (en) * | 2010-05-12 | 2014-07-15 | Applied Materials, Inc. | Confined process volume PECVD chamber |
| CN102986017B (zh) * | 2010-05-28 | 2015-09-16 | 恩特格林斯公司 | 高表面电阻率静电吸盘 |
| JP5835985B2 (ja) * | 2010-09-16 | 2015-12-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP6103046B2 (ja) * | 2014-03-10 | 2017-03-29 | 住友大阪セメント株式会社 | 誘電体材料、静電チャック装置 |
| CN106575634A (zh) * | 2014-08-15 | 2017-04-19 | 应用材料公司 | 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置 |
| US10020218B2 (en) * | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
| CN110140193B (zh) * | 2016-12-16 | 2023-04-14 | 应用材料公司 | 用于实现高温处理而没有腔室漂移的方法 |
-
2019
- 2019-07-23 US US16/520,166 patent/US20200058539A1/en not_active Abandoned
- 2019-07-24 CN CN201980051346.5A patent/CN112534560A/zh active Pending
- 2019-07-24 WO PCT/US2019/043243 patent/WO2020036715A1/en not_active Ceased
- 2019-07-24 JP JP2021507986A patent/JP2021534587A/ja not_active Ceased
- 2019-07-24 SG SG11202100059VA patent/SG11202100059VA/en unknown
- 2019-07-24 KR KR1020217006623A patent/KR20210033541A/ko active Pending
- 2019-08-07 TW TW108128061A patent/TWI811421B/zh active
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