JP2010536172A - 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 - Google Patents
電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 Download PDFInfo
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- JP2010536172A JP2010536172A JP2010519987A JP2010519987A JP2010536172A JP 2010536172 A JP2010536172 A JP 2010536172A JP 2010519987 A JP2010519987 A JP 2010519987A JP 2010519987 A JP2010519987 A JP 2010519987A JP 2010536172 A JP2010536172 A JP 2010536172A
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- Prior art keywords
- seasoning
- electronic device
- device manufacturing
- plasma
- manufacturing system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Epidemiology (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 部品を電子デバイス製造システムに取り付ける前にシーズニングすることを含む、電子デバイス製造システムの部品をシーズニングするための方法。
- 部品のシーズニング後、部品を電子デバイス製造システムに取り付ける工程を更に含む請求項1記載の方法。
- 部品を電子デバイス製造システムに取り付けた後、部品を更にシーズニングする工程を更に含む請求項2記載の方法。
- 部品を電子デバイス製造システムに取り付ける前に、現場外シーズニングされた部品が既定の品質規格を満たすか否かを判断することを更に含む請求項1記載の方法。
- 既定の品質規格が、現場外シーズニングされた部品がその使用開始前に要求される現場シーズニングサイクルの最高回数を含む請求項4記載の方法。
- 電子デバイス製造システムが、化学的機械的研磨システム、化学蒸着システム、イオン注入システム、エピタキシャル結晶成長システム、プラズマシステム、酸化システム、フォトリソグラフィシステム、拡散システム、金属化システム及び洗浄システムから成る群から選択される請求項1記載の方法。
- 部品をプラズマに曝露し、
プラズマにオリフィスを強制的に通過させることを含む、オリフィスを有する電子デバイス製造システムの部品をシーズニングするための方法。 - 部品との間にシールを形成するように構成された固定具に部品を載置し、固定具内の圧力を低下させることによりプラズマをオリフィスに引き込む工程を更に含む請求項7記載の方法。
- シーズニングチャンバと、
シーズニングチャンバに接続されたガス供給源と、
シーズニングチャンバ内で部品を支持するように構成された固定具と、
固定具に接続された真空ポンプと、
シーズニングチャンバ内でプラズマを発生させるように構成された上方電極及び下方電極とを含み、
固定具は更に部品のオリフィスにプラズマを引き込むように構成される、電子デバイス製造システムの部品をシーズニングするためのシステム。 - 上方電極がシーズニングチャンバの壁部を含む請求項9記載のシステム。
- 下方電極が固定具を含む請求項9記載のシステム。
- 生産装置を使用して行われる電子デバイス製造部品のシーズニング工程の数を減らすことにより電子デバイス製造システムの動作中断時間を短縮することを含む、電子デバイス製造施設の性能を改善するための方法。
- 電子デバイス製造部品のシーズニング工程の数を減らす工程が、電子デバイス製造部品の削減された数のシーズニング工程の残りを電子デバイス製造施設の外部で行うことを更に含む請求項12記載の方法。
- 事前シーズニングされた電子デバイス製造部品を生産装置に取り付ける工程を更に含む請求項12記載の方法。
- 事前シーズニングされた電子デバイス製造部品を使用して施設の電子デバイス製造システムの動作中断時間を短縮することにより、電子デバイス製造施設の生産能力の予測可能性及び性能を上昇させる工程を更に含む請求項12記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95528107P | 2007-08-10 | 2007-08-10 | |
PCT/US2008/009495 WO2009023124A1 (en) | 2007-08-10 | 2008-08-09 | Methods and apparatus for ex situ seasoning of electronic device manufacturing process components |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014151396A Division JP2015008299A (ja) | 2007-08-10 | 2014-07-25 | 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 |
Publications (1)
Publication Number | Publication Date |
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JP2010536172A true JP2010536172A (ja) | 2010-11-25 |
Family
ID=40347278
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010519987A Pending JP2010536172A (ja) | 2007-08-10 | 2008-08-09 | 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 |
JP2014151396A Pending JP2015008299A (ja) | 2007-08-10 | 2014-07-25 | 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 |
JP2016092885A Pending JP2016167625A (ja) | 2007-08-10 | 2016-05-05 | 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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JP2014151396A Pending JP2015008299A (ja) | 2007-08-10 | 2014-07-25 | 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 |
JP2016092885A Pending JP2016167625A (ja) | 2007-08-10 | 2016-05-05 | 電子デバイス製造処理部品を現場外シーズニングするための方法及び装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8492674B2 (ja) |
JP (3) | JP2010536172A (ja) |
KR (1) | KR101588654B1 (ja) |
SG (1) | SG2012059440A (ja) |
TW (1) | TWI487000B (ja) |
WO (1) | WO2009023124A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9999907B2 (en) | 2016-04-01 | 2018-06-19 | Applied Materials, Inc. | Cleaning process that precipitates yttrium oxy-flouride |
US20200058539A1 (en) * | 2018-08-17 | 2020-02-20 | Applied Materials, Inc. | Coating material for processing chambers |
Citations (4)
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JPS62253772A (ja) * | 1986-04-25 | 1987-11-05 | Canon Inc | 成膜装置 |
JPH08264462A (ja) * | 1995-03-28 | 1996-10-11 | Sanyo Electric Co Ltd | 成膜装置 |
JP2002339072A (ja) * | 2001-05-17 | 2002-11-27 | Ngk Insulators Ltd | 薄膜作製方法及び薄膜作製装置 |
US20040182833A1 (en) * | 2003-01-31 | 2004-09-23 | Tokyo Electron Limited | Method for manufacturing a substrate with a pre-seasoned plasma processing system |
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2008
- 2008-08-09 KR KR1020107005217A patent/KR101588654B1/ko active IP Right Grant
- 2008-08-09 SG SG2012059440A patent/SG2012059440A/en unknown
- 2008-08-09 JP JP2010519987A patent/JP2010536172A/ja active Pending
- 2008-08-09 US US12/189,141 patent/US8492674B2/en active Active
- 2008-08-09 WO PCT/US2008/009495 patent/WO2009023124A1/en active Application Filing
- 2008-08-11 TW TW097130580A patent/TWI487000B/zh active
-
2013
- 2013-07-22 US US13/947,713 patent/US20130299464A1/en not_active Abandoned
-
2014
- 2014-07-25 JP JP2014151396A patent/JP2015008299A/ja active Pending
-
2016
- 2016-05-05 JP JP2016092885A patent/JP2016167625A/ja active Pending
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JPS62253772A (ja) * | 1986-04-25 | 1987-11-05 | Canon Inc | 成膜装置 |
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JP2002339072A (ja) * | 2001-05-17 | 2002-11-27 | Ngk Insulators Ltd | 薄膜作製方法及び薄膜作製装置 |
US20040182833A1 (en) * | 2003-01-31 | 2004-09-23 | Tokyo Electron Limited | Method for manufacturing a substrate with a pre-seasoned plasma processing system |
Also Published As
Publication number | Publication date |
---|---|
US20090043416A1 (en) | 2009-02-12 |
JP2015008299A (ja) | 2015-01-15 |
SG2012059440A (en) | 2014-03-28 |
TW200917332A (en) | 2009-04-16 |
KR20100051099A (ko) | 2010-05-14 |
JP2016167625A (ja) | 2016-09-15 |
US8492674B2 (en) | 2013-07-23 |
TWI487000B (zh) | 2015-06-01 |
US20130299464A1 (en) | 2013-11-14 |
WO2009023124A1 (en) | 2009-02-19 |
KR101588654B1 (ko) | 2016-01-27 |
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