CN102296277A - 等离子处理腔室的基座 - Google Patents

等离子处理腔室的基座 Download PDF

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CN102296277A
CN102296277A CN2011101815839A CN201110181583A CN102296277A CN 102296277 A CN102296277 A CN 102296277A CN 2011101815839 A CN2011101815839 A CN 2011101815839A CN 201110181583 A CN201110181583 A CN 201110181583A CN 102296277 A CN102296277 A CN 102296277A
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coating
chamber
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dielectric coating
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K·S·洛
D·毛
R·K·F·劳
M·A·伦塔
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract

本发明涉及一种等离子处理腔室的基座，特别是一种等离子处理装置的基座，所述基座具有石墨主体，所述石墨主体具有用于支撑至少一个衬底的顶表面，所述顶表面具有等离子喷涂氧化铝涂层。一种真空处理腔室具有主腔室本体、设置在所述腔室本体的顶板处的莲蓬头、设置在所述腔室本体内部的支座和耦接到所述支座的基座，所述基座由具有用于支撑至少一个衬底的顶表面的石墨主体构成，所述顶表面具有例如等离子喷涂氧化铝涂层的电介质涂层。

Description

等离子处理腔室的基座
相关申请
本申请要求2010年6月25日提交的美国临时申请序列号61/358,627的优先权，其全文以引用方式结合到本申请中。
背景技术
1.技术领域
本主题申请涉及真空处理腔室，例如用于化学汽相沉积(CVD)、等离子增强CVD(PECVD)、物理汽相沉积(PVD)等的腔室。本主题发明特别涉及一种用于支撑处理腔室内部的衬底(基片)的基座。
2.现有技术
举例来说，诸如PECVD等离子处理腔室的真空处理腔室利用射频功率引发和维持等离子体。该射频功率通过电极、天线等施加到该腔室。在一些腔室设计中，除了其在等离子处理期间支撑衬底的功能外，基座还被用作电极之一。在当今的大部分设计中基座是温控的。基座的本质要求其在处理温度下是导电并且热稳定的。因此，可能的材料之一是石墨。然而，石墨的使用在等离子体稳定性和薄膜厚度的不均匀性方面带来一些问题。另外，在处理腔室清洗过程中该基座易被蚀刻，该清洗过程通常采用不将衬底放置在基座上的等离子点火方式，即基座暴露在等离子体中。
发明内容
下面的发明内容意在提出本发明的一些方面和特征的基本知识。该发明内容不是本发明的宽泛概述，同样也不意欲特别标识本发明的主要或关键元件或者划定本发明的范围。其唯一目的是以简化方式给出本发明的一些概念，作为接下来给出的更详细说明的序言。
本主题发明的实施例在基座设计上进行改进并且提供能够保持稳定等离子体和沉积均匀膜片的基座。在此公开的一些实例涉及用于太阳能电池制造的等离子处理腔室。具体而言，对于太阳能电池制造中的ARC(抗反射涂层)，可以看出，如果石墨基座用作接地电极，处理窗口就希望的设备特性而言窄。因此，根据本发明的实施例，在石墨基座上形成薄的电介质涂层。在一些实例中，该电介质涂层是至少3微米厚的等离子喷涂氧化铝，而在一些实例中是大约50微米厚的等离子喷涂氧化铝。在其他实例中电介质涂层是氮化硅。使用这种具有涂覆基座，发射器的薄膜厚度不均匀性和饱和电流密度得到实质性改进。
附图说明
结合并构成说明书的一部分的附图例举了本发明的实施例，并且连同说明书一起用于解释和举例说明本发明的原理。附图意欲以概略方式举例示出示例性实施例的大部分特征。附图不意欲图示实际实施例的每个特征或者图示元件的相对尺寸，也不是按比例绘制的。
图1A是包括根据本发明的实施例的石墨基座的PECVD处理腔室的示意性图示的主要元件。
图1B图示了根据本发明的实施例的基座设计。
图2A图示了使用现有技术中的基座沉积在多晶硅晶片上的不均匀氮化硅薄膜，而图2B图示了使用根据本发明的实施例的石墨基座沉积在多晶硅晶片上的均匀氮化硅薄膜。
具体实施方式
根据本发明的实施例，与如上所述的现有技术中的基座有关的问题通过在基座的顶表面上设置电介质涂层来解决。根据一个实例，该电介质涂层是至少3微米厚的等离子喷涂氧化铝。根据一个实例，厚度为大约50微米。使用这种基座可明显改善薄膜厚度不均匀性和发射器的饱和电流密度。
氮化硅是另一种可用作涂层的电介质。氮化硅的介电常数(6-8)有些类似于氧化铝(大约9)；然而，在实践中，等离子喷涂氧化铝更易于制造。因此，下面提供的实例涉及等离子喷涂氧化铝。
图1A是包括石墨基座的PECVD处理腔室的示意性图示的主要说明。本体100、顶板105和底板115形成具有可由泵152抽空的处理空间120的腔室。莲蓬头125经由管道130接收气体并将气体引入空间120。基座135由可包括加热器的支座140支撑。支座140在高度上可移动或不可移动。如果射频功率源耦接到位于顶板或莲蓬头中的电极，接地(母)线145将基座耦接到接地电位。
图1B更详细地图示了根据本发明的实施例的基座135的设计。该实例中的基座135用于多个衬底的处理，例如用于制造太阳能电池。将衬底(未示出)容纳在形成于石墨基座135的顶表面上的凹槽(凹部)150内。顶表面涂覆有例如氧化铝的电介质。
图2A图示了使用根据现有技术的石墨基座在多晶硅晶片上沉积的不均匀氮化硅薄膜。可以看出，朝向衬底边缘沉积物更薄，并且实际上，在晶片的最边缘处几乎看不到沉积物。这种结果是不可接受的，因为在该实例中氮化物层用作绝缘保护件和抗反射层，因此进入太阳能电池的光转换为电力而不是被反射。由于这种不均匀沉积，太阳能电池的效率将降低，因为在边缘处光将被反射而不是完全用于光电转换。
图2B图示了使用根据本发明的实施例的带有等离子喷射涂层的石墨基座在多晶硅晶片上沉积的均匀氮化硅薄膜。可以看出，由于在晶片的整个表面上可看到均匀的颜色(蓝色)，使用带有涂层的基座使得氮化硅沉积明显更均匀。
实例
5″N型c-Si太阳能电池晶片被选为监控器晶片。在沉积抗反射层之前，该晶片已经通过双面表面织构化、双面p型掺杂和双面SiO2涂覆进行处理。在抗反射层沉积步骤中，大约800A SiN薄膜沉积在晶片的两面，从而产生深蓝色。在双面氮化硅沉积之后，利用Sinton WCT-120光电导寿命测试仪测量监控器晶片。照明模式被设定为是瞬时的(闪光灯设置1/64)。发射器的总饱和电流密度(Jo)由PCID模拟软件进行指示。监控器具有双面发射器。因此发射器的单面饱和电流密度为来自PCID的总Jo的一半。利用几种条件在具有和没有涂层的石墨基座上处理监控器晶片。发射器的单面饱和电流密度在表1中进行比较。Jo的降低提高了开路电压(Voc)和太阳能电池的效率。
表1图示了在双面氮化硅沉积之后在具有和没有涂层的基座上的TTW(织构化测试晶片)的发射器饱和电流密度的比较。
表1：织构化测试晶片的发射器饱和电流密度的比较
Figure BSA00000529030700041
从表1中可以看出，在根据本发明的实施例的基座上处理的晶片提供了显著改善的Jo。在该实例中，基座通过等离子喷涂大约50微米厚的氧化铝被涂覆。
已经针对特定实例描述了本发明，这些实例从任何方面来看均是示例性的而不是限制性的。本领域技术人员将知晓，硬件、软件和固件的许多不同组合均适用于实施本发明。此外，考虑在此公开的本发明的说明书和实际应用，本发明的其它实施方式对于本领域技术人员来说是显而易见的。所述实施例的各个方面和/或组件可单独或任意组合地用于等离子腔室领域。该说明书和实例被认为仅仅是示例性的，本发明的真实范围和精神由随后的权利要求书指示。

Claims (16)

1.一种等离子处理装置的基座，其包括具有用于支撑至少一个衬底的顶表面的石墨主体，所述顶表面具有形成于其上的电介质涂层。
2.如权利要求1所述的基座，其特征在于，所述电介质涂层包括等离子喷涂氧化铝涂层。
3.如权利要求2所述的基座，其特征在于，所述等离子喷涂氧化铝涂层具有至少3微米的厚度。
4.如权利要求2所述的基座，其特征在于，所述等离子喷涂氧化铝涂层具有大约50微米的厚度。
5.如权利要求1所述的基座，其特征在于，所述电介质涂层包括氮化硅。
6.一种等离子处理装置的基座，其包括具有用于支撑衬底的顶表面的石墨主体，所述顶表面具有用于容纳所述衬底的多个凹槽和形成于所述顶表面上的电介质涂层。
7.如权利要求6所述的基座，其特征在于，所述电介质涂层包括等离子喷涂氧化铝涂层。
8.如权利要求7所述的基座，其特征在于，所述涂层具有至少3微米的厚度。
9.如权利要求7所述的基座，其特征在于，所述涂层具有大约50微米的厚度。
10.根据权利要求6所述的基座，其特征在于，所述电介质涂层包括氮化硅。
11.一种真空处理腔室，其包括：
主腔室本体；
设置在所述腔室本体的顶板处的莲蓬头；
设置在所述腔室本体内部的支座；
耦接到所述支座的基座，所述基座包括具有用于支撑至少一个衬底的顶表面的石墨主体，所述顶表面具有形成于其上的电介质涂层。
12.如权利要求11所述的腔室，其特征在于，所述电介质涂层包括等离子喷涂氧化铝涂层。
13.如权利要求12所述的腔室，其特征在于，所述基座包括多个凹槽，每个凹槽用于容纳一个衬底。
14.如权利要求12所述的腔室，其特征在于，所述涂层具有至少3微米的厚度。
15.如权利要求12所述的腔室，其特征在于，所述涂层具有大约50微米的厚度。
16.如权利要求11所述的腔室，其特征在于，所述电介质涂层包括氮化硅。
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