JPWO2019231599A5 - - Google Patents
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- JPWO2019231599A5 JPWO2019231599A5 JP2020567106A JP2020567106A JPWO2019231599A5 JP WO2019231599 A5 JPWO2019231599 A5 JP WO2019231599A5 JP 2020567106 A JP2020567106 A JP 2020567106A JP 2020567106 A JP2020567106 A JP 2020567106A JP WO2019231599 A5 JPWO2019231599 A5 JP WO2019231599A5
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- Prior art keywords
- protective film
- substrate
- process chamber
- forming
- internal components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 46
- 230000001681 protective effect Effects 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 15
- 239000000463 material Substances 0.000 claims 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 3
- 229910017109 AlON Inorganic materials 0.000 claims 3
- 229910004140 HfO Inorganic materials 0.000 claims 3
- 229910004541 SiN Inorganic materials 0.000 claims 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 229910003465 moissanite Inorganic materials 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
Claims (20)
プロセスチャンバ内において、ＡＬＤ又はＣＶＤを介して、チャンバ側壁、チャンバ底部、基板支持ペデスタル、シャワーヘッド、及びチャンバ上部を含む複数の内部構成要素上に保護膜を形成することと、
前記保護膜を形成した後に、前記基板支持ペデスタル上に基板を配置することであって、前記基板は前記基板支持ペデスタルの前記保護膜を含まない部分と接触する、前記基板支持ペデスタル上に前記基板を配置することと
を含む方法。 It ’s a way to process the board.
Forming a protective film in the process chamber via ALD or CVD on multiple internal components including the chamber sidewall, chamber bottom, substrate support pedestal, shower head, and chamber top.
After the protective film is formed, the substrate is placed on the substrate-supporting pedestal, and the substrate is in contact with a portion of the substrate-supporting pedestal that does not include the protective film, and the substrate is placed on the substrate-supporting pedestal. And how to include it.
続いて、前記プロセスチャンバから前記基板を取り出すことと、
前記プロセスチャンバを洗浄することであって、前記プロセスチャンバの洗浄により、前記プロセスチャンバの前記複数の内部構成要素から前記保護膜が除去される、前記プロセスチャンバを洗浄することと
を更に含む、請求項４に記載の方法。 After placing the substrate, performing at least one step in the process chamber
Subsequently, the substrate is taken out from the process chamber, and
A claim that further comprises cleaning the process chamber, wherein cleaning the process chamber removes the protective film from the plurality of internal components of the process chamber. Item 4. The method according to Item 4.
プロセスチャンバに少なくとも１つのガスを導入することと、
前記プロセスチャンバ内における前記少なくとも１つのガスの配置に応じて、前記プロセスチャンバの複数の内部構成要素から第１の保護膜を除去することと、
前記プロセスチャンバ内において、ＡＬＤ又はＣＶＤを介して、前記複数の内部構成要素上に第２の保護膜を形成することであって、前記第２の保護膜はアモルファスＳｉ、カルボシラン、ポリシリコン、ＳｉＣ、ＳｉＮ、ＳｉＯ２、Ａｌ２Ｏ３、ＡｌＯＮ、ＨｆＯ２、又はＮｉ３Ａｌを含む、前記複数の内部構成要素上に第２の保護膜を形成することと、
前記第２の保護膜を形成した後に、基板支持ペデスタル上に基板を配置することと
を含む方法。 A way to protect the process chamber
Introducing at least one gas into the process chamber,
Depending on the placement of the at least one gas in the process chamber, removing the first protective film from the plurality of internal components of the process chamber.
In the process chamber, a second protective film is formed on the plurality of internal components via ALD or CVD, and the second protective film is amorphous Si, carbosilane, polysilicon, SiC. To form a second protective film on the plurality of internal components, including SiN, SiO 2 , Al 2 O 3 , AlON, HfO 2 , or Ni 3 Al.
A method comprising arranging a substrate on a substrate-supporting pedestal after forming the second protective film.
プロセスチャンバ内において、ＡＬＤ又はＣＶＤを介して、チャンバ側壁、チャンバ底部、基板支持ペデスタル、シャワーヘッド、及びチャンバ上部を含む複数の内部構成要素上に保護膜を形成することであって、前記保護膜はアモルファスＳｉ、カルボシラン、ポリシリコン、ＳｉＣ、ＳｉＮ、ＳｉＯ２、Ａｌ２Ｏ３、ＡｌＯＮ、ＨｆＯ２、又はＮｉ３Ａｌを含む、複数の内部構成要素上に保護膜を形成することと、
前記保護膜を形成した後に、前記基板支持ペデスタル上に基板を配置することであって、前記保護膜は前記基板支持ペデスタルの一部上に形成されておらず、前記基板は前記基板支持ペデスタルの前記保護膜を含まない前記一部と接触する、前記基板支持ペデスタル上に前記基板を配置することと
を含む方法。 It ’s a way to process the board.
The protective film is formed in the process chamber via ALD or CVD on a plurality of internal components including a chamber sidewall, a chamber bottom, a substrate support pedestal, a shower head, and a chamber top. Forming a protective film on multiple internal components, including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO 2 , Al 2 O 3 , AlON, HfO 2 , or Ni 3 Al.
After forming the protective film, the substrate is placed on the substrate-supporting pedestal, the protective film is not formed on a part of the substrate-supporting pedestal, and the substrate is of the substrate-supporting pedestal. A method comprising arranging the substrate on the substrate support pedestal in contact with the portion that does not include the protective film.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862679410P | 2018-06-01 | 2018-06-01 | |
| US62/679,410 | 2018-06-01 | ||
| US16/383,354 | 2019-04-12 | ||
| US16/383,354 US10704141B2 (en) | 2018-06-01 | 2019-04-12 | In-situ CVD and ALD coating of chamber to control metal contamination |
| PCT/US2019/029602 WO2019231599A1 (en) | 2018-06-01 | 2019-04-29 | In-situ cvd and ald coating of chamber to control metal contamination |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021526585A JP2021526585A (en) | 2021-10-07 |
| JPWO2019231599A5 true JPWO2019231599A5 (en) | 2022-05-06 |
| JP7391047B2 JP7391047B2 (en) | 2023-12-04 |
Family
ID=68692839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020567106A Active JP7391047B2 (en) | 2018-06-01 | 2019-04-29 | In-situ CVD and ALD coating of chambers to control metal contamination |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10704141B2 (en) |
| JP (1) | JP7391047B2 (en) |
| KR (1) | KR20210005961A (en) |
| CN (1) | CN112154534A (en) |
| TW (1) | TWI821285B (en) |
| WO (1) | WO2019231599A1 (en) |
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