CN113823546A - Reaction cavity and processing method thereof - Google Patents
Reaction cavity and processing method thereof Download PDFInfo
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- CN113823546A CN113823546A CN202010565083.4A CN202010565083A CN113823546A CN 113823546 A CN113823546 A CN 113823546A CN 202010565083 A CN202010565083 A CN 202010565083A CN 113823546 A CN113823546 A CN 113823546A
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- 239000011224 oxide ceramic Substances 0.000 claims abstract description 46
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- 238000000034 method Methods 0.000 claims description 31
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 34
- 229910052814 silicon oxide Inorganic materials 0.000 description 30
- 150000002500 ions Chemical class 0.000 description 22
- 239000007789 gas Substances 0.000 description 18
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- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a reaction chamber and a processing method thereof, wherein the reaction chamber is used for forming a carbon-containing amorphous ceramic film on a substrate and comprises the following steps: the device comprises a substrate supporting seat, wherein the substrate supporting seat is used as an electrode at one end and used for heating a substrate, a first protective film and a second protective film are sequentially formed on the surface of the substrate supporting seat and the inner wall of a reaction cavity, the first protective film is an oxide ceramic film, and the second protective film is a carbon-containing amorphous ceramic film. Like this, through on the reaction cavity inner wall with substrate supporting seat surface formation structure fine and close oxide ceramic film, the oxide ceramic film on the surface of substrate supporting seat keeps apart substrate and substrate supporting seat, avoids the ion diffusion on the substrate supporting seat to the substrate surface, and the oxide ceramic film on the reaction cavity inner wall avoids reaction ion or impurity ion adhesion to cause the pollution to the reaction cavity on the reaction cavity inner wall simultaneously.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a reaction cavity and a processing method thereof.
Background
The Amorphous Carbon Film is a hydrogen-containing Carbon Film (Hydrogenated Amorphous Carbon Film) with Amorphous and microcrystalline structures, has excellent performances of high hardness, wear resistance, optical light transmittance, low friction coefficient, chemical inertness and the like, and is widely used in integrated circuits.
At present, an amorphous carbon film is deposited on a wafer, mainly by placing the wafer on a heating plate in a reaction chamber, and then introducing gas into the reaction chamber to generate a thin film on the wafer.
However, the conventional heating plate is made of aluminum, and ions in the heating plate are easily diffused to the back surface of the wafer, thereby affecting the subsequent process.
Disclosure of Invention
Accordingly, the present invention is directed to a reaction chamber and a method for preventing ions in a heating plate from entering a back surface of a wafer.
In order to achieve the purpose, the invention has the following technical scheme:
a reaction chamber for forming a carbon-containing amorphous ceramic film on a substrate, comprising:
a substrate support pedestal for serving as an end electrode and for heating a substrate;
a first protective film and a second protective film are sequentially formed on the surface of the substrate supporting seat and the inner wall of the reaction cavity;
the first protective film is an oxide ceramic film, and the second protective film is a carbon-containing amorphous ceramic film.
Optionally, the carbon-containing amorphous ceramic film formed on the substrate is the same as the second protective film.
A method of treating a reaction chamber for forming a carbon-containing amorphous ceramic film on a substrate, the reaction chamber comprising: a substrate support pedestal for serving as an end electrode and for heating a substrate, the method comprising:
forming an oxide ceramic film on the inner wall of the reaction cavity and the surface of the substrate supporting seat;
and forming a carbon-containing amorphous ceramic film on the surface of the oxide ceramic film.
Optionally, the method further includes:
and placing the substrate on the substrate supporting seat in the reaction cavity, and forming a carbon-containing amorphous ceramic film on the surface of the substrate.
Optionally, the forming of the oxide ceramic thin film in the reaction chamber includes:
and introducing silane and nitrogen-containing oxide into the reaction cavity, and carrying out first radio frequency treatment on the silane and the nitrogen-containing oxide to form an oxide ceramic film in the reaction cavity.
Optionally, the forming of the amorphous ceramic film containing carbon on the surface of the oxide ceramic film includes:
and (3) introducing unsaturated hydrocarbon and inert gas into the reaction cavity, and carrying out second radio frequency treatment on the unsaturated hydrocarbon and the inert gas to form a carbon-containing amorphous ceramic film on the surface of the oxide ceramic film.
Optionally, the power when performing the first radio frequency processing is not greater than the power when performing the second radio frequency processing.
Optionally, the forming of the carbon-containing amorphous ceramic on the substrate surface includes:
and (3) introducing unsaturated hydrocarbon and inert gas into the reaction cavity, and carrying out third radio frequency treatment on the unsaturated hydrocarbon and the inert gas to form a carbon-containing amorphous ceramic film on the surface of the substrate.
Optionally, the method further includes:
removing the substrate from the reaction chamber;
and removing the carbon-containing amorphous ceramic film and the oxide ceramic film in the reaction cavity.
Optionally, the radio frequency during the first radio frequency processing is 27MHz to 28 MHz.
The reaction chamber provided by the embodiment of the invention is used for forming a carbon-containing amorphous ceramic film on a substrate, and comprises: the substrate support is used as an electrode at one end and used for heating the substrate, and a first protective film and a second protective film are sequentially formed on the surface of the substrate support and the inner wall of the reaction cavity, wherein the first protective film is an oxide ceramic film, and the second protective film is a carbon-containing amorphous ceramic film. Like this, through on the reaction cavity inner wall with substrate supporting seat surface formation structure fine and close oxide ceramic film, the oxide ceramic film on the surface of substrate supporting seat keeps apart substrate and substrate supporting seat, avoids the ion diffusion on the substrate supporting seat to the substrate surface, and the oxide ceramic film on the reaction cavity inner wall avoids reaction ion or impurity ion adhesion to cause the pollution to the reaction cavity on the reaction cavity inner wall simultaneously. And then forming the carbon-containing amorphous ceramic membrane on the surface of the oxide ceramic membrane to ensure that the environment of the reaction cavity is consistent with the environment of the carbon-containing amorphous ceramic membrane formed on the substrate, thereby improving the forming efficiency of the carbon-containing amorphous ceramic membrane on the substrate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic flow chart of a method for processing a reaction chamber according to an embodiment of the present invention;
fig. 2 shows a histogram of ion content of a wafer surface in accordance with an embodiment of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background, currently, an amorphous carbon film is deposited on a wafer by placing the wafer on a heating plate in a reaction chamber, and then introducing gas into the reaction chamber to form a thin film on the wafer. However, the existing heating plate adopts an aluminum wafer heating plate, ions in the heating plate are easy to diffuse to the back surface of the wafer, and therefore the back surface of the wafer and the environment in the process cavity are polluted. The existing method for preventing ions in the heating plate from diffusing to the back of the wafer is to utilize the ceramic base to isolate the heating plate from the wafer by arranging the ceramic base between the heating plate and the wafer, but the manufacturing cost of the ceramic base is higher, and the ceramic base is difficult to clean after being polluted, so that the ceramic base cannot be reused, the process cost is increased, and the forming efficiency of an amorphous carbon film on the wafer is reduced.
To this end, embodiments of the present application provide a reaction chamber for forming a carbon-containing amorphous ceramic film on a substrate, comprising: the substrate support is used as an electrode at one end and used for heating the substrate, and a first protective film and a second protective film are sequentially formed on the surface of the substrate support and the inner wall of the reaction cavity, wherein the first protective film is an oxide ceramic film, and the second protective film is a carbon-containing amorphous ceramic film. Like this, through on the reaction cavity inner wall with substrate supporting seat surface formation structure fine and close oxide ceramic film, the oxide ceramic film on the surface of substrate supporting seat keeps apart substrate and substrate supporting seat, avoids the ion diffusion on the substrate supporting seat to the substrate surface, and the oxide ceramic film on the reaction cavity inner wall avoids reaction ion or impurity ion adhesion to cause the pollution to the reaction cavity on the reaction cavity inner wall simultaneously. And then forming the carbon-containing amorphous ceramic membrane on the surface of the oxide ceramic membrane to ensure that the environment of the reaction cavity is consistent with the environment of the carbon-containing amorphous ceramic membrane formed on the substrate, thereby improving the forming efficiency of the carbon-containing amorphous ceramic membrane on the substrate.
In order to facilitate understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
The embodiment of the present application provides a reaction chamber, and the reaction chamber is used for forming a carbon-containing amorphous ceramic film on a substrate, and includes: the substrate supporting seat is used as an electrode at one end and used for heating the substrate;
a first protective film and a second protective film are sequentially formed on the surface of the substrate supporting seat and the inner wall of the reaction cavity;
the first protective film is an oxide ceramic film, and the second protective film is a carbon-containing amorphous ceramic film.
In the embodiment of the present application, the reaction chamber is used to form a carbon-containing amorphous ceramic film On a substrate, where the substrate may be a Si substrate, a Ge substrate, a SiGe substrate, an SOI (Silicon On Insulator) or a GOI (Germanium On Insulator), and the like. The substrate may have formed thereon a device structure and an interconnection line electrically connecting the device structure, the device structure may include a MOS device, a memory device and/or other passive devices, the interconnection line may include multiple layers, different layers of the interconnection line may be interconnected through a contact hole, a via hole, etc., and the interconnection line may be a metal material, such as tungsten, aluminum, copper, etc. In this embodiment, the carbon-containing amorphous ceramic film may be an amorphous carbon film (α -C).
In the embodiment of the application, the substrate supporting seat is used as an end electrode and used for heating the substrate. In this embodiment, the substrate supporting base can be used as a lower electrode, and the lower electrode is used for supporting the substrate and is opposite to the upper electrode to generate an electric field, so that the plasma formed by exciting the reaction gas by the upper electrode can move towards the surface of the substrate fixed on the substrate supporting base under the action of the electric field, and thus the surface of the substrate is processed, for example, an amorphous carbon film is formed on the surface of the substrate. The substrate support pedestal may also be used to heat the substrate to a temperature required for the process, for example, to deposit an amorphous carbon film on the substrate. In a specific embodiment, the substrate support pedestal may be a metal disk, such as an aluminum metal disk. In the embodiment of the application, a first protective film and a second protective film are sequentially formed on the surface of the substrate supporting seat and the inner wall of the reaction cavity, the first protective film is an oxide ceramic film, and the second protective film is a carbon-containing amorphous ceramic film. An oxide ceramic film and a carbon-containing amorphous ceramic film are sequentially formed on the surface of the substrate supporting seat, wherein the oxide ceramic film can be a silicon oxide film, and the carbon-containing amorphous ceramic film can be an amorphous carbon film. Utilize the structure compactness of silicon oxide film like this, keep apart substrate supporting seat and substrate, avoid the ion diffusion in the substrate supporting seat to the wafer surface, the silicon oxide film of reaction cavity inner wall keeps apart reaction gas etc. and reaction cavity inner wall simultaneously, avoids gaseous ion adhesion on reaction cavity inner wall, causes the pollution to the reaction cavity. And the amorphous carbon film on the surface of the silicon oxide ensures that the environment in the reaction cavity is consistent with the environment required by forming the amorphous carbon film on the substrate, thereby improving the efficiency of forming the amorphous carbon film on the substrate.
In this embodiment, the reaction chamber further includes a spray plate, the spray plate can serve as an upper electrode, and the plasma forms an amorphous carbon film on the substrate under the action of an electric field between the spray plate and the substrate support base. The spraying plate is provided with gas injection holes, and plasma generated after the reaction gas and the inert gas in the reaction cavity are subjected to radio frequency treatment uniformly reaches the surface of the substrate through the gas injection holes on the spraying plate under the action of an electric field so as to form a film on the surface of the substrate.
The reaction cavity is also internally provided with an air pumping ring, when the reaction cavity is cleaned, the reaction gas is ionized by a high-frequency power supply to generate plasma, the plasma is introduced into the reaction cavity and reacts with a protective film in the reaction cavity to generate gas, and the gas generated by the reaction is pumped by the air pumping ring to clean the reaction cavity.
In this embodiment, the amorphous ceramic film containing carbon formed on the substrate is the same as the second protective film, for example, the amorphous carbon film formed on the substrate is the same as the amorphous carbon film formed on the surfaces of the substrate supporting pillars and the inner wall of the reaction chamber. The amorphous carbon film is formed on the inner wall of the reaction cavity and the surface of the substrate supporting seat, so that the environment in the reaction cavity is consistent with the environment for generating the amorphous carbon film on the substrate, and the amorphous carbon film formed on the substrate is the same as the amorphous carbon film formed on the inner wall of the reaction cavity and the surface of the substrate supporting seat. The reaction chamber provided in the embodiments of the present application is described in detail above, and a processing method of the reaction chamber is also provided in the embodiments of the present application.
Before forming an amorphous carbon film on a wafer, a pair reaction is requiredCleaning the chamber to remove the deposited film accumulated in the reaction chamber and the particles suspended in the chamber, and during the cleaning process, the cleaning gas of nitrogen trifluoride (NF) is usually introduced into the chamber3)，NF3The gas ionizes fluorine ions in the plasma, the fluorine ions react with the inner wall of the reaction cavity and the deposition film on the heating plate to produce fluorine-containing gas, and then the fluorine-containing gas is pumped away by the pump to achieve the purpose of cleaning the cavity. However, when depositing an amorphous carbon film on a machine using an aluminum heating plate as a plasma electrode, the aluminum content of the metal on the back of the wafer is far beyond the standard of the industry.
In an embodiment of the present application, a reaction chamber is used for forming a carbon-containing amorphous ceramic film on a substrate, and the reaction chamber includes: the substrate supporting column is used as an electrode at one end and used for heating the substrate, and the processing method of the reaction cavity comprises the following steps: in step S01, a ceramic oxide film is formed on the inner wall of the reaction chamber and the surface of the substrate support pedestal, as shown in fig. 1.
In this embodiment, form silicon oxide film on reaction cavity inner wall and substrate supporting seat surface, silicon oxide film has higher compactness, can be better with reaction cavity inner wall bonding together, can keep apart substrate supporting seat and substrate better simultaneously, avoid the ion diffusion in the substrate supporting seat to the substrate in, improved the metal pollution of amorphous carbon film formation in-process. And the impedance of the cavity can be changed through the silicon oxide film deposited in the reaction cavity, so that a radio frequency circuit in the process of depositing the amorphous carbon film is adjusted, the deposition rate of the amorphous carbon film is improved, and the productivity is further improved.
In this embodiment, the method for forming the oxide ceramic film may be to introduce Silane (SiH) into the reaction chamber4) And nitrogen-containing oxide, and then carrying out first radio frequency treatment on the silane and the nitrogen-containing oxide to form an oxide ceramic film on the inner wall of the reaction cavity and the surface of the substrate supporting seat. The nitrogen-containing oxide may be nitrous oxide (N)2O) to form a silicon oxide film on the inner wall of the reaction chamber and the surface of the substrate support, for example, by Plasma Enhanced Chemical Vapor deposition (Plasma Enhanced Chemical Vapor deposition)ion, PECVD) to form silicon oxide, specifically, silane and nitrous oxide are reacted in a plasma state to prepare a silicon dioxide film, and the reaction equation is as follows:
SiH4+2N2O＝SiO2+2N2+2H2
in a particular application, the chemical composition ratio in the deposited film can be controlled by adjusting the gas flow ratios of silane and nitrous oxide. The flow rate of silane can be 20sccm to 100sccm, and the flow rate of nitrous oxide can be 7000sccm to 1000 sccm.
In this embodiment, the rf frequency during the first rf processing may be 27MHz to 28 MHz. The radio frequency during the first radio frequency treatment can be 13.56MHz, the power can be 100-300W, for example 200W, so that a silicon oxide film with high compactness is prepared on the inner wall of the reaction cavity and the heating plate, the stress range of the silicon oxide film is-600 Pa-0 Pa, ions in the heating plate are prevented from diffusing into the substrate, and other ions are prevented from being adhered to the inner wall of the reaction cavity to pollute the reaction cavity in the process of forming the amorphous carbon film.
In step S02, an amorphous ceramic film containing carbon is formed on the surface of the oxide ceramic film.
In the embodiment of the application, the carbon-containing amorphous ceramic film is formed on the surface of the oxide ceramic film, namely, the carbon-containing amorphous ceramic film is formed on the inner wall of the reaction cavity and the surface of the substrate supporting seat, so that the atmosphere in the reaction cavity is close to the environment when the carbon-containing amorphous ceramic film is deposited, the forming rate of the amorphous ceramic film is improved, and the forming quality of the amorphous ceramic film is improved.
In this embodiment, the method for forming the amorphous ceramic film containing carbon on the surface of the oxide ceramic film may include introducing unsaturated hydrocarbon and inert gas into the reaction chamber, and then performing a second radio frequency treatment on the unsaturated hydrocarbon and the inert gas to form the amorphous ceramic film containing carbon on the surface of the oxide ceramic film. Carbon-containing amorphous ceramic films are formed on the inner wall of the reaction cavity and the surface of the substrate supporting seat, so that the environment formed in the reaction cavity and the formed carbon-containing amorphous ceramic filmsThe environment of amorphous ceramics of carbon is consistent. Specifically, propylene (C) may be introduced into the reaction chamber3H6) And helium (He), and then performing radio frequency treatment on the propylene and helium to generate an amorphous carbon film on the surface of the silicon oxide film. In a specific application, the flow rate of the propylene can be 1500-2500 sccm, and the flow rate of the helium can be 500-1500 sccm.
In this embodiment, the rf frequency during the second rf processing may be 27MHz to 28 MHz. The radio frequency when the second radio frequency treatment is carried out can also be 13.56MHz, the power when the first radio frequency treatment is carried out can be not more than the power when the second radio frequency treatment is carried out, the power when the second radio frequency treatment is carried out can be 1000W-1700W, for example 1450W, because the first radio frequency treatment is to directly form a silicon oxide film on the inner wall of the reaction cavity, the second radio frequency treatment is to form an amorphous carbon film on the surface of the silicon oxide film, the adhesive force between the reaction cavity and the silicon oxide film is larger than the adhesive force between the silicon oxide film and the amorphous carbon film, the radio frequency power is increased when the amorphous carbon film is formed, so that the amorphous carbon film is formed on the surface of the silicon oxide film, and the formed amorphous carbon film is prevented from falling off from the surface of the silicon oxide film.
In the present embodiment, referring to fig. 2, fig. 2 shows a histogram 211 of ion content on the wafer surface when the oxide ceramic thin film and the amorphous ceramic film containing carbon are not formed on the substrate support, and a histogram 221 of ion content on the wafer surface after the oxide ceramic thin film and the amorphous ceramic film containing carbon are formed on the substrate support. Compared with the oxide ceramic film on the surface of the substrate supporting seat, the oxide ceramic film is not formed on the surface of the substrate supporting seat, the ion species quantity in the substrate is obviously reduced after the oxide ceramic film is formed on the surface of the substrate supporting seat, and the content of each ion in the substrate is obviously reduced after the oxide ceramic film is formed on the surface of the substrate supporting seat, so that the reaction cavity processing method provided by the embodiment of the application can effectively prevent the ions in the substrate supporting seat from entering the substrate.
In this embodiment, the high frequency may be 13.65MHz or 28MHz, the low frequency may be 400KHz, the amorphous carbon film at the high frequency has a different impedance from the amorphous carbon film at the low frequency,the impedances of the amorphous carbon film and the silicon oxide film at high frequencies are different from the impedances of the amorphous carbon film and the silicon oxide film at low frequencies. At high frequencies, the amorphous carbon film has a lower resistance than the amorphous carbon film and the silicon oxide film, and at low frequencies, the amorphous carbon film also has a lower resistance than the amorphous carbon film and the silicon oxide film. The air gap between the substrate and the substrate support constitutes a capacitor, and the first protective film and the second protective film bring extra capacitance, so that the total impedance is the sum of the impedance of the plasma (plasma) and the impedance of the air gap (gap) and the impedance of the protective film (procoat), that is, Z ═ Zplasma+Zgap+Zprocoat. When the amorphous carbon film and the silicon oxide film are used as the protective film, the resistance of the amorphous carbon film and the silicon oxide film is higher than that of the amorphous carbon film as the protective film. Therefore, the impedance when the amorphous carbon film and the silicon oxide film function as the protective film is larger than the impedance when the amorphous carbon film functions as the protective film, both at high frequencies and at low frequencies.
In this embodiment, after the reaction chamber is pretreated, the substrate may be placed on a substrate support seat of the reaction chamber, and then a carbon-containing amorphous ceramic film may be formed on the surface of the substrate. Specifically, propylene and helium gas may be introduced into the reaction chamber, and then the propylene and helium gas may be subjected to a third radio frequency treatment to form the amorphous carbon film on the surface of the substrate. The power for the third rf processing may be the same as or different from the power for the second rf processing. When the amorphous carbon film is formed on the surface of the substrate, the flow rate of propylene introduced into the reaction chamber may be the same as the flow rate of propylene introduced into the reaction chamber when the amorphous carbon film is formed on the surface of the silicon oxide. When the amorphous carbon film is formed on the surface of the wafer, the flow rate of the helium gas introduced into the reaction cavity can be the same as that of the helium gas introduced into the reaction cavity when the amorphous carbon film is formed on the surface of the silicon oxide.
In this embodiment, after the amorphous carbon film is formed on the surface of the substrate, the substrate is taken out from the reaction chamber, and then the amorphous carbon film and the silicon oxide film on the inner wall of the reaction chamber and the surface of the substrate supporting seat are removed, so that other processes can be performed in the reaction chamberA process for preparing the composite material. The amorphous carbon film and the silicon oxide film in the reaction cavity can be removed by cleaning the amorphous carbon film and the silicon oxide film on the inner wall of the reaction cavity and the heating plate by using remote plasma, and introducing oxygen (O) into the reaction cavity2) Argon (Ar) and NF3，NF3The gas ionizes fluorine ions in the plasma, the fluorine ions react with the inner wall of the reaction cavity and the deposition film on the heating plate to produce fluorine-containing gas, and then the fluorine-containing gas is pumped away by the pump to achieve the purpose of cleaning the cavity.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the apparatus embodiment, since it is substantially similar to the method embodiment, it is relatively simple to describe, and reference may be made to some descriptions of the method embodiment for relevant points.
The foregoing is only a preferred embodiment of the present invention, and although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A reaction chamber for forming a carbon-containing amorphous ceramic film on a substrate, comprising:
a substrate support pedestal for serving as an end electrode and for heating a substrate;
a first protective film and a second protective film are sequentially formed on the surface of the substrate supporting seat and the inner wall of the reaction cavity;
the first protective film is an oxide ceramic film, and the second protective film is a carbon-containing amorphous ceramic film.
2. The reaction chamber as claimed in claim 1, wherein the amorphous ceramic film containing carbon formed on the substrate is the same as the second protective film.
3. A method of treating a reaction chamber for forming a carbon-containing amorphous ceramic film on a substrate, the reaction chamber comprising: a substrate support pedestal for serving as an end electrode and for heating a substrate, the method comprising:
forming an oxide ceramic film on the inner wall of the reaction cavity and the surface of the substrate supporting seat;
and forming a carbon-containing amorphous ceramic film on the surface of the oxide ceramic film.
4. The method of claim 3, further comprising:
placing a substrate on a substrate support in the reaction chamber of claim 1 or 2, and forming a carbon-containing amorphous ceramic film on the surface of the substrate.
5. The method of claim 3, wherein forming the oxide ceramic thin film in the reaction chamber comprises:
and introducing silane and nitrogen-containing oxide into the reaction cavity, and carrying out first radio frequency treatment on the silane and the nitrogen-containing oxide to form an oxide ceramic film in the reaction cavity.
6. The method according to claim 5, wherein said forming a carbon-containing amorphous ceramic film on said oxide ceramic film comprises:
and (3) introducing unsaturated hydrocarbon and inert gas into the reaction cavity, and carrying out second radio frequency treatment on the unsaturated hydrocarbon and the inert gas to form a carbon-containing amorphous ceramic film on the surface of the oxide ceramic film.
7. The method of claim 6, wherein the power of the first RF processing is not greater than the power of the second RF processing.
8. The method of claim 4, wherein forming the carbon-containing amorphous ceramic on the substrate surface comprises:
and (3) introducing unsaturated hydrocarbon and inert gas into the reaction cavity, and carrying out third radio frequency treatment on the unsaturated hydrocarbon and the inert gas to form a carbon-containing amorphous ceramic film on the surface of the substrate.
9. The method of claim 4, further comprising:
removing the substrate from the reaction chamber;
and removing the carbon-containing amorphous ceramic film and the oxide ceramic film in the reaction cavity.
10. The method according to claim 6 or 7, wherein the radio frequency of the first radio frequency treatment is 27MHz to 28 MHz.
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