JPWO2019229894A1 - 半導体モジュールおよび電力変換装置 - Google Patents
半導体モジュールおよび電力変換装置 Download PDFInfo
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- 229910052802 copper Inorganic materials 0.000 description 9
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- 230000007774 longterm Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 238000003860 storage Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 238000003466 welding Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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Abstract
Description
ここでは、半導体モジュール1の一部である下アームモジュール13の第1例について説明する。
Vs_19−Vs_N=LB・d(I17+I19)/dt−MB・d(I17+I19+I21)/dt …(2)
Vs_17−Vs_N=LA・d(I17)/dt+LB・d(I17+I19)/dt−(MA+MB)・d(I17+I19+I21)/dt …(3)
制御系の配線が有するインピーダンスは、半導体チップ17、19、21のそれぞれにおいて同一と考え、半導体チップ17、19、21のそれぞれの特性が同一と考えると、電流が均一に流れている場合は、その均一に流れている電流をIとすると、下記の式(4)および式(5)を満足することになる。
Vs_17=Vs_19=Vs_21 …(5)
式(1)〜式(5)より、次の式(6)および式(7)の関係が得られる。
LC=2LB−3MB …(7)
式(6)を満たすように、リードフレーム31とリードフレーム32との間の距離を調節すると、下アームモジュール13の構造から、次の式(8)も満たすとする。
式(7)に式(8)を代入すると、次の式(9)の関係が得られる。
上述した理想的な条件では、まず、式(6)を満足するように、リードフレームの間隔を設定する。さらに、式(9)を満足するように、半導体チップ19と半導体チップ21との中点において、リードフレーム31をリードフレーム32に接合材67によって接合する。このようにリードフレーム31とリードフレーム32とを配置することで、各半導体チップ17、19、21に流れる電流を完全に均一化させることができる。
ここでは、半導体モジュールの一部である下アームモジュールの第2例について説明する。
ここでは、半導体モジュールの一部である下アームモジュールの第3例について説明する。
ここでは、上述した実施の形態1〜3に係る半導体モジュール1を適用した電力変換装置について説明する。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態4として、三相のインバータに本発明を適用した場合について説明する。
Claims (11)
- 主面を有し、導体および絶縁体の少なくともいずれかを含む基材と、
前記基材の前記主面にそれぞれ搭載された複数の半導体チップと、
複数の前記半導体チップを電気的に並列に接続する態様で、複数の前記半導体チップのそれぞれに電気的に接続された第1配線導体と、
前記第1配線導体と電気的に接続された第2配線導体と、
を有し、
前記第1配線導体および前記第2配線導体では、
前記第1配線導体と前記第2配線導体とが互いに対向するように配置されている対向配置部と、
前記第1配線導体と前記第2配線導体とが互いに対向しないように配置されている非対向配置部と
が設けられた、半導体モジュール。 - 前記対向配置部および前記非対向配置部では、前記第1配線導体と前記第2配線導体とが互いに対向している部分の面積は、前記第1配線導体と前記第2配線導体とが互いに対向していない部分の面積よりも大きい、請求項1記載の半導体モジュール。
- 前記対向配置部は、前記半導体チップに対して、前記基材が位置する側とは反対の側に位置する、請求項1記載の半導体モジュール。
- 複数の前記半導体チップは、前記基材の前記主面において一方向に沿って配置され、
前記主面を平面視した状態では、前記第1配線導体および前記第2配線導体は、前記一方向に沿って配置された、請求項1記載の半導体モジュール。 - 前記基材の前記主面を平面視した状態では、前記対向配置部と前記非対向配置部とは、一方向に沿って配置された、請求項1記載の半導体モジュール。
- 前記第1配線導体は、
第1平面上に位置する第1配線導体第1部と
前記第1平面と交差する第2平面上に位置する第1配線導体第2部と
を含み、
前記第2配線導体は、前記第2平面と対向する第3平面上に位置し、
前記対向配置部では、前記第1配線導体第2部と前記第2配線導体とが対向し、
前記非対向配置部では、前記第1配線導体第1部と前記第2配線導体とが、互いに交差する態様で配置されている、請求項1記載の半導体モジュール。 - 前記対向配置部では、前記第1配線導体第2部および前記第2配線導体は、前記基材の前記主面に交差するように位置し、
前記非対向配置部では、前記第1配線導体第1部は、前記基材の前記主面に平行に位置する、請求項6記載の半導体モジュール。 - 前記第1配線導体と前記第2配線導体との間に絶縁体が充填された、請求項1記載の半導体モジュール。
- 前記対向配置部では、
前記第1配線導体と前記第2配線導体とが、第1距離を隔てられている第1部分と、
前記第1配線導体と前記第2配線導体とが、前記第1距離とは異なる第2距離を隔てられている第2部分と
が設けられた、請求項1記載の半導体モジュール。 - 前記半導体チップは、ワイドバンドギャップ半導体を含む、請求項1記載の半導体モジュール。
- 請求項1〜10のいずれか1項に記載の半導体パワーモジュールを有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と
を備えた電力変換装置。
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JP (1) | JP6541896B1 (ja) |
CN (1) | CN112204733A (ja) |
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JP2000060148A (ja) | 1998-08-17 | 2000-02-25 | Mitsubishi Electric Corp | スイッチングモジュールおよび電力変換装置 |
JP4603956B2 (ja) * | 2005-08-26 | 2010-12-22 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP4977407B2 (ja) * | 2006-06-09 | 2012-07-18 | 本田技研工業株式会社 | 半導体装置 |
US7767495B2 (en) | 2008-08-25 | 2010-08-03 | Infineon Technologies Ag | Method for the fabrication of semiconductor devices including attaching chips to each other with a dielectric material |
JP4826845B2 (ja) * | 2009-02-10 | 2011-11-30 | 三菱電機株式会社 | パワー半導体モジュール |
JP5546892B2 (ja) | 2010-02-12 | 2014-07-09 | 株式会社日本自動車部品総合研究所 | 昇圧回路 |
JP5633581B2 (ja) * | 2011-01-07 | 2014-12-03 | 富士電機株式会社 | 半導体装置およびその製造方法 |
CN102254886A (zh) | 2011-08-04 | 2011-11-23 | 株洲南车时代电气股份有限公司 | 一种免引线键合igbt模块 |
JP6128135B2 (ja) | 2013-02-06 | 2017-05-17 | 富士電機株式会社 | 半導体装置 |
JP6096614B2 (ja) * | 2013-07-11 | 2017-03-15 | 株式会社 日立パワーデバイス | パワー半導体モジュールおよびそれを用いた電力変換装置 |
JP6300386B2 (ja) * | 2015-03-23 | 2018-03-28 | 株式会社日立製作所 | 半導体装置 |
US10727145B2 (en) | 2016-09-21 | 2020-07-28 | Mitsubishi Electric Corporation | Semiconducter device with filler to suppress generation of air bubbles and electric power converter |
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DE112018007676T5 (de) | 2021-02-18 |
JP6541896B1 (ja) | 2019-07-10 |
CN112204733A (zh) | 2021-01-08 |
US11348903B2 (en) | 2022-05-31 |
US20210098428A1 (en) | 2021-04-01 |
WO2019229894A1 (ja) | 2019-12-05 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |