JPWO2019181198A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
Description
図1は、第1の実施の形態における半導体装置の平面図であり、図2は、第1の実施の形態における半導体装置の断面図である。なお、図2は、いずれも図1における一点鎖線Y−Yによる断面図である。また、図2(A)は、半導体ユニット10が冷却器50を備える場合を、図2(B)は、半導体ユニット10がヒートシンク50aを備える場合をそれぞれ表している。
第2の実施の形態は、第1の実施の形態よりも、半導体素子からの熱によるベース板に生じる熱応力による歪みを抑制することができる半導体装置について、図3及び図4を用いて説明する。
11 主セラミック回路基板
11a,21a,31a 絶縁板
11b,21b,31b 導電パターン
11c,21c,31c 金属板
12 半導体素子
13 主端子
20,30 接続端子ユニット
21,31 副セラミック回路基板
22,32 接続端子
40 ベース板
41a,41b 長辺
41c,41d 短辺
42 配置領域
43a,43b 取り付け孔
43a1,43a2,43b1,43b2 溝部
50 冷却器
50a ヒートシンク
51 平板部
52 フィン
53 ネジ
54 密閉部材
55 放熱グリース
56 弾性部材
57 ウォータージャケット
57a 開放部
58 冷媒
60,60a 半導体装置
Claims (7)
- 半導体素子と、
接続端子と、
平面視で矩形状のベース板と、
前記半導体素子が配置されて、前記ベース板のおもて面上に配置される主基板と、
前記接続端子が配置されて、前記ベース板のおもて面上に配置される副基板と、
を有し、
前記主基板は、前記ベース板のおもて面の一対の長辺に沿った、前記ベース板のおもて面の中央部を含む配置領域に配置され、
前記副基板は、前記ベース板のおもて面の前記配置領域よりも、前記一対の長辺側に近い側部に配置されている、
半導体装置。 - 前記主基板は、前記半導体素子と、前記半導体素子の主電極と電気的に接続された主端子とが配置され、
前記副基板は、前記半導体素子の制御電極及びセンス素子と電気的に接続された制御端子の少なくともいずれかが配置されている、
請求項1に記載の半導体装置。 - 前記ベース板は、複数の取り付け孔が、前記一対の長辺に沿って前記側部にそれぞれ形成されており、
前記副基板は、前記複数の取り付け孔のうち隣接する取り付け孔に挟まれて配置されている、
請求項1または2に記載の半導体装置。 - 前記ベース板の裏面の前記配置領域に対応する冷却領域を取り囲んで配置された密閉部材を挟んで前記裏面に取り付けられた冷却部をさらに有し、
前記複数の取り付け孔は、前記ベース板の前記密閉部材の外側に配置されている、
請求項3に記載の半導体装置。 - 前記冷却部は、前記ベース板の裏面との間に、前記一対の長辺に沿って、前記密閉部材より前記ベース板の外側に設けられた弾性部材を、さらに挟んで前記ベース板の裏面に取り付けられている、
請求項4に記載の半導体装置。 - 前記冷却部は、前記ベース板の裏面との間に、前記一対の長辺に沿って、前記取り付け孔より前記ベース板の中央部側に前記密閉部材があり、前記取り付け孔より前記ベース板の外側に前記弾性部材が設けられている、
請求項4に記載の半導体装置。 - 前記ベース板上の前記副基板と前記隣接する取り付け孔とのそれぞれの間に、前記ベース板の短手方向に沿った溝部が形成されている、
請求項4乃至6のいずれか1項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2018052939 | 2018-03-20 | ||
JP2018052939 | 2018-03-20 | ||
PCT/JP2019/002611 WO2019181198A1 (ja) | 2018-03-20 | 2019-01-28 | 半導体装置 |
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JPWO2019181198A1 true JPWO2019181198A1 (ja) | 2020-10-22 |
JP7070661B2 JP7070661B2 (ja) | 2022-05-18 |
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US (1) | US11251101B2 (ja) |
JP (1) | JP7070661B2 (ja) |
CN (1) | CN111052357B (ja) |
DE (1) | DE112019000176B4 (ja) |
WO (1) | WO2019181198A1 (ja) |
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CN114026687A (zh) * | 2020-01-07 | 2022-02-08 | 富士电机株式会社 | 半导体装置 |
DE102020119209A1 (de) | 2020-07-21 | 2022-01-27 | Rogers Germany Gmbh | Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS503095Y1 (ja) * | 1970-06-30 | 1975-01-27 | ||
JP2001308246A (ja) * | 2000-02-16 | 2001-11-02 | Hitachi Ltd | 電力変換装置 |
JP2009021345A (ja) * | 2007-07-11 | 2009-01-29 | Mitsubishi Electric Corp | パワー半導体モジュール |
WO2017056176A1 (ja) * | 2015-09-29 | 2017-04-06 | 三菱電機株式会社 | 半導体装置およびそれを備える半導体モジュール |
Family Cites Families (19)
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EP0661748A1 (en) * | 1993-12-28 | 1995-07-05 | Hitachi, Ltd. | Semiconductor device |
JP3094768B2 (ja) | 1994-01-11 | 2000-10-03 | 富士電機株式会社 | 半導体装置 |
JPH08213547A (ja) | 1995-02-08 | 1996-08-20 | Fuji Electric Co Ltd | 半導体装置 |
JP2920102B2 (ja) | 1995-12-21 | 1999-07-19 | 株式会社三社電機製作所 | 電力用半導体モジュール |
JP4220094B2 (ja) | 1999-04-05 | 2009-02-04 | 三菱電機株式会社 | パワー半導体モジュール |
US6414867B2 (en) | 2000-02-16 | 2002-07-02 | Hitachi, Ltd. | Power inverter |
JP4130527B2 (ja) * | 2000-12-13 | 2008-08-06 | 三菱電機株式会社 | 半導体装置 |
DE102004042367B4 (de) | 2004-09-01 | 2008-07-10 | Infineon Technologies Ag | Leistungshalbleitermodul |
JP4535453B2 (ja) * | 2006-03-06 | 2010-09-01 | 株式会社小糸製作所 | 光源モジュール及び車輌用灯具 |
DE102006045939B4 (de) | 2006-09-28 | 2021-06-02 | Infineon Technologies Ag | Leistungshalbleitermodul mit verbesserter Temperaturwechselstabilität |
EP2725610B1 (en) | 2011-09-28 | 2020-06-03 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
CN104838576B (zh) | 2013-02-06 | 2018-02-23 | 富士电机株式会社 | 半导体装置 |
JP6102297B2 (ja) | 2013-02-06 | 2017-03-29 | 富士電機株式会社 | 半導体装置 |
AT14114U1 (de) | 2013-09-20 | 2015-04-15 | Mikroelektronik Ges Mit Beschränkter Haftung Ab | Trägerplatte für ein Leistungselektronikmodul |
JP2015073012A (ja) | 2013-10-03 | 2015-04-16 | 富士電機株式会社 | 半導体装置 |
JP2015142059A (ja) * | 2014-01-30 | 2015-08-03 | 株式会社日立製作所 | パワー半導体モジュール |
WO2015151235A1 (ja) * | 2014-04-01 | 2015-10-08 | 富士電機株式会社 | 半導体装置 |
WO2016002077A1 (ja) | 2014-07-04 | 2016-01-07 | 三菱電機株式会社 | 電力用半導体装置 |
CN105789192B (zh) | 2016-05-03 | 2018-11-30 | 扬州国扬电子有限公司 | 一种设有电极大臂的功率模块 |
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- 2019-01-28 DE DE112019000176.0T patent/DE112019000176B4/de active Active
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- 2019-01-28 WO PCT/JP2019/002611 patent/WO2019181198A1/ja active Application Filing
- 2019-01-28 CN CN201980004052.7A patent/CN111052357B/zh active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503095Y1 (ja) * | 1970-06-30 | 1975-01-27 | ||
JP2001308246A (ja) * | 2000-02-16 | 2001-11-02 | Hitachi Ltd | 電力変換装置 |
JP2009021345A (ja) * | 2007-07-11 | 2009-01-29 | Mitsubishi Electric Corp | パワー半導体モジュール |
WO2017056176A1 (ja) * | 2015-09-29 | 2017-04-06 | 三菱電機株式会社 | 半導体装置およびそれを備える半導体モジュール |
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US11251101B2 (en) | 2022-02-15 |
DE112019000176T5 (de) | 2020-09-03 |
CN111052357B (zh) | 2023-12-19 |
CN111052357A (zh) | 2020-04-21 |
US20200194329A1 (en) | 2020-06-18 |
JP7070661B2 (ja) | 2022-05-18 |
DE112019000176B4 (de) | 2022-05-05 |
WO2019181198A1 (ja) | 2019-09-26 |
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