JPWO2019173252A5 - - Google Patents

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JPWO2019173252A5
JPWO2019173252A5 JP2020546371A JP2020546371A JPWO2019173252A5 JP WO2019173252 A5 JPWO2019173252 A5 JP WO2019173252A5 JP 2020546371 A JP2020546371 A JP 2020546371A JP 2020546371 A JP2020546371 A JP 2020546371A JP WO2019173252 A5 JPWO2019173252 A5 JP WO2019173252A5
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overlay
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another target
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JP2020546371A
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Japanese (ja)
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JP7175319B2 (ja
JP2021515232A5 (https=
JP2021515232A (ja
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Priority claimed from US15/969,158 external-priority patent/US10446367B2/en
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JP2020546371A 2018-03-07 2019-03-05 荷電粒子ビーム計測システムの帯電効果と放射線損傷を最小化する走査戦略 Active JP7175319B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862639603P 2018-03-07 2018-03-07
US62/639,603 2018-03-07
US15/969,158 2018-05-02
US15/969,158 US10446367B2 (en) 2018-03-07 2018-05-02 Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system
PCT/US2019/020630 WO2019173252A1 (en) 2018-03-07 2019-03-05 Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system

Publications (4)

Publication Number Publication Date
JP2021515232A JP2021515232A (ja) 2021-06-17
JP2021515232A5 JP2021515232A5 (https=) 2022-02-16
JPWO2019173252A5 true JPWO2019173252A5 (https=) 2022-02-16
JP7175319B2 JP7175319B2 (ja) 2022-11-18

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JP2020546371A Active JP7175319B2 (ja) 2018-03-07 2019-03-05 荷電粒子ビーム計測システムの帯電効果と放射線損傷を最小化する走査戦略

Country Status (8)

Country Link
US (1) US10446367B2 (https=)
EP (1) EP3762779B1 (https=)
JP (1) JP7175319B2 (https=)
KR (1) KR102438826B1 (https=)
CN (2) CN121115423A (https=)
IL (1) IL276810B2 (https=)
SG (1) SG11202008092QA (https=)
WO (1) WO2019173252A1 (https=)

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US11605550B2 (en) * 2018-12-21 2023-03-14 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Alignment system
JP2021093336A (ja) * 2019-12-12 2021-06-17 株式会社日立ハイテク 画像調整方法および荷電粒子ビームシステム
US11874102B2 (en) * 2019-12-30 2024-01-16 Kla Corporation Thick photo resist layer metrology target
KR102857305B1 (ko) * 2020-02-07 2025-09-08 케이엘에이 코포레이션 반도체 디바이스의 오정합 측정에서의 비직교 타겟 및 이를 사용하기 위한 방법
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11054753B1 (en) * 2020-04-20 2021-07-06 Applied Materials Israel Ltd. Overlay monitoring
CN115485824B (zh) * 2020-05-05 2024-04-16 科磊股份有限公司 用于高表面型态半导体堆叠的计量目标
WO2021225587A1 (en) * 2020-05-06 2021-11-11 Kla Corporation Inter-step feedforward process control in the manufacture of semiconductor devices
US11686576B2 (en) * 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
JP7144485B2 (ja) * 2020-07-15 2022-09-29 日本電子株式会社 像取得方法および電子顕微鏡
US11995848B2 (en) * 2021-03-22 2024-05-28 Applied Materials Israel Ltd. Image generation for examination of a semiconductor specimen
KR102617622B1 (ko) * 2021-04-26 2023-12-27 (주)오로스 테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
KR102750903B1 (ko) * 2021-06-30 2025-01-09 (주) 오로스테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
KR102750914B1 (ko) * 2021-06-30 2025-01-09 (주) 오로스테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
KR102750923B1 (ko) * 2021-06-30 2025-01-09 (주) 오로스테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
US12461456B2 (en) * 2022-01-28 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for overlay measurement in semiconductor device manufacturing
TW202414771A (zh) * 2022-09-29 2024-04-01 聯華電子股份有限公司 疊對圖樣
US20240167813A1 (en) * 2022-11-23 2024-05-23 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology

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JPH0774079A (ja) * 1993-09-02 1995-03-17 Nikon Corp 露光方法及び露光装置
JP3148353B2 (ja) 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JP2000077300A (ja) * 1998-08-28 2000-03-14 Nikon Corp 投影露光装置及び位置検出方法
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US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
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