JPWO2019092871A1 - ワイドギャップ半導体装置 - Google Patents
ワイドギャップ半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000010410 layer Substances 0.000 claims abstract description 168
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 167
- 229920005591 polysilicon Polymers 0.000 claims abstract description 167
- 239000011229 interlayer Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
Description
本発明によるワイドギャップ半導体装置は、
第1導電型のドリフト層と、
前記ドリフト層に形成された第2導電型からなる複数のウェル領域と、
前記ウェル領域及び前記ドリフト層のうち前記ウェル領域の間に設けられたポリシリコン層と、
前記ポリシリコン層に設けられた層間絶縁膜と、
前記層間絶縁膜に設けられたゲートパッドと、
前記ポリシリコン層に電気的に接続されたソースパッドと、
を備えてよい。
本発明の概念1によるワイドギャップ半導体装置において、
前記ウェル領域の間には、第2導電型領域が所定の間隔で設けられてもよい。
本発明の概念2によるワイドギャップ半導体装置において、
前記第2導電型領域のうち前記ポリシリコン層との接触領域は超高濃度第2導電型領域からなってもよい。
本発明の概念1乃至3のいずれか1つによるワイドギャップ半導体装置において、
前記ポリシリコン層と前記ドリフト層はショットキー接触してもよい。
本発明の概念1乃至4のいずれか1つによるワイドギャップ半導体装置において、
前記ポリシリコン層は、前記ドリフト層に設けられたアンドープドポリシリコン層と、前記アンドープドポリシリコン層に設けられたドープドポリシリコン層とを有してもよい。
本発明の概念1乃至4のいずれか1つによるワイドギャップ半導体装置において、
前記ポリシリコン層は、前記ドリフト層に設けられた低ドープドポリシリコン層と、前記低ドープドポリシリコン層に設けられ、前記低ドープドポリシリコン層の不純物濃度よりも不純物濃度の高い高ドープドポリシリコン層とを有してもよい。
本発明の概念1乃至6のいずれか1つによるワイドギャップ半導体装置において、
前記ウェル領域と前記ポリシリコン層との間に設けられたフィールド絶縁膜をさらに備えてもよい。
本発明の概念7によるワイドギャップ半導体装置において、
前記ウェル領域のうち前記フィールド絶縁膜と前記ポリシリコン層との面方向における境界の下方位置に、超高濃度第2導電型領域が設けられてもよい。
本発明の概念1乃至8のいずれか1つによるワイドギャップ半導体装置において、
前記ゲート電極は前記ポリシリコン層を構成するポリシリコンからなってもよい。
本発明の概念1乃至9のいずれか1つによるワイドギャップ半導体装置において、
前記ウェル領域にソース領域が設けられ、
前記ウェル領域のうち、前記ソース領域に隣接して前記ソースパッドに電気的に接続されるウェルコンタクト領域は、超高濃度第2導電型領域からなってもよい。
《構成》
本実施の形態では、一例として縦型のMOSFETを用いて説明する。本実施の形態では、第1導電型をn型、第2導電型をp型として説明するが、このような態様に限られることはなく、第1導電型をp型、第2導電型をn型としてもよい。また、本実施の形態では、ワイドギャップ半導体として炭化ケイ素を用いて説明するが、このような態様に限られることはなく、ワイドギャップ半導体として窒化ガリウム等を用いてもよい。本実施の形態では、図1の上下方向(ワイドギャップ半導体装置の厚み方向)を上下方向と呼び、上下方向に直交する方向を面方向と呼ぶ。
次に、上述した構成からなる本実施の形態による作用・効果の一例について説明する。なお、「作用・効果」で説明するあらゆる態様を、上記構成で採用することができる。
次に、本発明の第2の実施の形態について説明する。
次に、本発明の第3の実施の形態について説明する。
次に、本発明の第4の実施の形態について説明する。
20 ウェル領域
21 ウェルコンタクト領域
26 超高濃度p型領域(超高濃度第2導電型領域)
62 フィールド絶縁膜
65 層間絶縁膜
110 ソースパッド
120 ゲートパッド
150 ポリシリコン層
151 アンドープドポリシリコン層
152 ドープドポリシリコン層
153 低ドープドポリシリコン層
154 高ドープドポリシリコン層
Claims (10)
- 第1導電型のドリフト層と、
前記ドリフト層に形成された第2導電型からなる複数のウェル領域と、
前記ウェル領域及び前記ドリフト層のうち前記ウェル領域の間に設けられたポリシリコン層と、
前記ポリシリコン層に設けられた層間絶縁膜と、
前記層間絶縁膜に設けられたゲートパッドと、
前記ポリシリコン層に電気的に接続されたソースパッドと、
を備えることを特徴とするワイドギャップ半導体装置。 - 前記ウェル領域の間には、第2導電型領域が所定の間隔で設けられていることを特徴とする請求項1に記載のワイドギャップ半導体装置。
- 前記第2導電型領域のうち前記ポリシリコン層との接触領域は超高濃度第2導電型領域からなることを特徴とする請求項2に記載のワイドギャップ半導体装置。
- 前記ポリシリコン層と前記ドリフト層はショットキー接触することを特徴とする請求項1に記載のワイドギャップ半導体装置。
- 前記ポリシリコン層は、前記ドリフト層に設けられたアンドープドポリシリコン層と、前記アンドープドポリシリコン層に設けられたドープドポリシリコン層とを有していることを特徴とする請求項1に記載のワイドギャップ半導体装置。
- 前記ポリシリコン層は、前記ドリフト層に設けられた低ドープドポリシリコン層と、前記低ドープドポリシリコン層に設けられ、前記低ドープドポリシリコン層の不純物濃度よりも不純物濃度の高い高ドープドポリシリコン層とを有していることを特徴とする請求項1に記載のワイドギャップ半導体装置。
- 前記ウェル領域と前記ポリシリコン層との間に設けられたフィールド絶縁膜をさらに備えることを特徴とする請求項1に記載のワイドギャップ半導体装置。
- 前記ウェル領域のうち前記フィールド絶縁膜と前記ポリシリコン層との面方向における境界の下方位置に、超高濃度第2導電型領域が設けられることを特徴とする請求項7に記載のワイドギャップ半導体装置。
- 前記ゲート電極は前記ポリシリコン層を構成するポリシリコンからなることを特徴とする請求項1に記載のワイドギャップ半導体装置。
- 前記ウェル領域にソース領域が設けられ、
前記ウェル領域のうち、前記ソース領域に隣接して前記ソースパッドに電気的に接続されるウェルコンタクト領域は、超高濃度第2導電型領域からなることを特徴とする請求項1に記載のワイドギャップ半導体装置。
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US7183575B2 (en) | 2002-02-19 | 2007-02-27 | Nissan Motor Co., Ltd. | High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode |
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